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TOSHIBA Transistor Silicon NPN Diffused Type (PCT process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
• Low collector saturation voltage
: V
CE (sat)
• High power dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SB906
Maximum Ratings
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 3 A
Base current IB 0.5 A
Collector power
dissipation
Junction temperature Tj 150 °C
Storage temperature range T
= 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)
(Ta = 25°C)
Characteristics Symbol Rating Unit
Ta = 25°C 1.0
Tc = 25°C
60 V
CBO
60 V
CEO
7 V
EBO
P
C
−55 to 150 °C
stg
20
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
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2SD1221
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = 5 V, IC = 0.5 A ― 0.7 1.0 V
Transition frequency fT VCE = 5 V, IC = 0.5 A ― 3.0 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 70 ― pF
Turn-on time ton ― 0.8 ―
Switching time
Storage time t
Fall time t
(Ta = 25°C)
(BR) CEO
h
h
CE (sat)
VCB = 60 V, IE = 0 ― ― 100 µA
CBO
VEB = 7 V, IC = 0 ― ― 100 µA
EBO
IC = 50 mA, IB = 0 60 ― ― V
FE (1)
FE (2)
stg
f
V
= 5 V, IC = 0.5 A 60 ― 300
(Note)
― 1.5 ―
CE
VCE = 5 V, IC = 3 A 20 ― ―
IC = 3 A, IB = 0.3 A ― 0.4 1.0 V
20 µs
INPUT
B1
I
= −IB2 = 0.2 A, DUTY CYCLE ≤ 1%
I
B1
IB2
IB1
I
B2
OUTPUT
VCC = 30 V
15 Ω
― 0.8 ―
µs
Note: hFE classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300
Marking
D1221
Product No.
Lot No.
hFE Classification
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
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2SD1221
(
3.0
90
(A)
C
2.0
1.0
Collector current I
– VCE
I
C
80
70
60
50
40
IB = 10 mA
30
20
Common emitter
Tc = 25°C
3.0
(A)
2.0
C
1.0
Collector current I
Tc = 100°C
– VBE
I
C
25
Common emitter
VCE = 5 V
−25
0
0
2 4 6 8
Collector-emitter voltage VCE (V)
0
0
0
0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
500
300
FE
DC current gain h
100
Tc = 100°C
25
−25
50
30
– IC
h
FE
Common emitter
VCE = 5 V
0.5
0.3
(V)
0.1
CE (sat)
V
0.05
1
Common emitter
IC/IB = 10
10
0.03 0.1 0.3 1 3
Collector current IC (A)
Collector-emitter saturation voltage
0.02
0.03 0.1 0.3 1 3
Collector current IC (A)
V
CE (sat)
Tc = 100°C
– I
C
25
−25
– Ta
P
24
(1)
20
(W)
C
16
12
8
4
Collector power dissipation P
(2)
(3)
0
0
25 50 75 100 125 150 175
Ambient temperature Ta (°C)
C
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
10
IC max (pulsed)*
5
IC max (continuous)
3
(A)
C
1
0.5
*: Single nonrepetitive pulse
Collector current I
0.3
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.1
Safe Operating Area
DC operation
Tc = 25°C)
Collector-emitter voltage VCE (V)
1 ms*
10 ms*
100 ms*
V
max
CEO
30 100 3 10 1
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2SD1221
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
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