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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5713
2SC5713
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: h
• Low collector-emitter sa turation voltage: V
• High-speed switching: tf = 50 ns (typ.)
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current IB 400 mA
Collector power
dissipation
Junction temperature Tj 150 °C
Storage temperature range T
= 400 to 1000 (IC = 0.5 A)
FE
CE (sat)
= 0.15 V (max)
(Ta ==== 25°C)
CBO
CEX
CEO
EBO
DC IC 4
Pulse I
DC 1.0
t = 10 s
7
CP
P
C
(Note)
stg
20 V
15 V
10 V
7 V
A
W
2.5
−55 to 150 °C
Industrial Applications
Unit: mm
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 28 pF
Rise time tr 110
Switching time
Storage time t
Fall time tf
(Ta ==== 25°C)
VCB = 20 V, IE = 0 100 nA
CBO
VEB = 7 V, IC = 0 100 nA
EBO
(BR) CEO
hFE (1) VCE = 2 V, IC = 0.5 A 400 1000
h
IC = 10 mA, IB = 0 10 V
(2) VCE = 2 V, IC = 1.6 A 200
FE
IC = 1.6 A, IB = 32 mA 0.15 V
CE (sat)
IC = 1.6 A, IB = 32 mA 1.10 V
BE (sat)
See Figure 1 circuit diagram.
∼
V
150
stg
−
CC
= −IB2 = 53 mA
I
B1
6 V, R
= 3.75 Ω
L
50
ns
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2001-12-17
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VCC
20 µs
I
B1
Duty cycle < 1%
IB2
Input
I
B1
IB2
L
R
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
2SC5713
Marking
2 C
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2SC5713
6
Common emitter
Ta = 25°C
Single nonrepetitive pulse
5
(A)
4
C
3
2
Collector current I
1
0
0
0.4
0.8 1.2 2 2.4 1.6
Collector-emitter voltage VCE (V)
1
Common emitter
IC/IB = 50
Single nonrepetitive pulse
0.1
(V)
CE (sat)
0.01
V
Collector-emitter saturation voltage
0.001 0.01 0.1 1 10
Collector current IC (A)
5
Common emitter
VCE = 2 V
Single nonrepetitive pulse
4
(A)
C
3
2
Collector current I
1
Ta = 100°C
0
0
0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
– VCE
I
C
V
CE (sat)
Ta = 100°C
– VBE
I
C
25
– IC
25°C
IB = 2 mA
−55°C
−55°C
25°C
20
15
10
– IC
h
FE
FE
10000
1000
Common emitter
VCE = 2 V
Single nonrepetitive
pulse
Ta = 100°C
8
6
4
DC current gain h
100
10
0.001
25°C
0.01 0.1 1 10
Collector current IC (A)
−55°C
10
Common emitter
IC/IB = 50
Single nonrepetitive
pulse
V
BE (sat)
– I
C
(V)
0.001
1
BE (sat)
V
Base-emitter saturation voltage
0.1
0.001 0.01 0.1 1 10
Ta = −55°C
25°C
100°C
Collector current IC (A)
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2SC5713
1000
Transient Thermal Resistance r
100
(°C/W)
th
r
10
Transient thermal resistance
1
0.001
0.01 0.1 1 10 100 1000
Pulse width tw (s)
10
IC max (pulsed) ♦
IC max (continuous)
Safe Operating Area
(A)
1
C
Collector current I
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
Note that the curves for
100 ms*, 10 s* and DC
0.1
operation* will be different when
the devices aren’t mounted on
an FR4 board (glass epoxy,
1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1 1 10 100
Collector-emitter voltage VCE (V)
100 µs♦
1 ms♦
10 ms♦
100 ms♦*
10 s♦*
max
CEO
V
– tw
th
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
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2SC5713
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
•
000707EA
5
2001-12-17
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