Toshiba 2SC5411 Datasheet

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5411
2SC5411
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
HIGH SPEED SWITCHING APPLICATIONS
l High Voltage : V l Low Saturation Voltage : V l High Speed : tf = 0.15 µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
CollectorBase Voltage V
CollectorEmitter Voltage V
EmitterBase Voltage V
Collector Current
Base Current I
Collector Power Dissipation P
Junction Temperature T
Storage Temperature Range T
(Tc = 25°C)
DC I
Pulse
ELECTRICAL CHARACTERISTICS
= 1500 V
CBO CE (sat)
I
= 3 V (Max.)
CBO
CEO
EBO
C
CP
B
C
j
stg
(Tc = 25°C)
1500 V
600 V
5 V
14
28
7 A
60 W
150 °C
55~150 °C
Unit: mm
A
JEDEC
JEITA
TOSHIBA 2-16E3A
Weight: 5.5 g (typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Collector Cutoff Current I
Emitter Cutoff Current I
EmitterBase Breakdown Voltage V
DC Current Gain
CollectorEmitter Saturation Voltage V
BaseEmitter Saturation Voltage V
Transition Frequency f
Collector Output Capacitance C
Switching Time
Storage Time t
Fall Time
t
CBO
EBO
(BR) CEOIC
h
FE (1)
h
FE (2)
CE (sat)
BE (sat)
T
ob
stg
f
V
= 1500 V, IE = 0 1 mA
CB
V
= 5 V, IC = 0 10 µA
E
B
= 10 mA, IB = 0 600 V
VCE = 5 V, IC = 2 A 10 40
VCE = 5 V, IC = 11 A 4 8
IC = 11 A, IB = 2.75 A 3 V
IC = 11 A, IB = 2.75 A 1.0 1.5 V
VCE = 10 V, IC = 0.1 A 2 MHz
VCB = 10 V, IE = 0, f = 1 MHz 190 pF
ICP = 8.5 A, I f
= 64 kHz
H
1
(end) = 1.6 A
B1
2.5 3.5
0.15 0.3
2001-08-20
µs
2SC5411
2
2001-08-20
Loading...
+ 3 hidden pages