TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
• Small reverse transfer capacitance: C
• Low noise figure: NF = 2.3dB (typ.)
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 20 mA
Base current IB 4 mA
Collector power dissipation PC 100 mW
Junction temperature T
Storage temperature range T
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
= 0.55 pF (typ.)
re
(Ta = 25°C)
CBO
30 V
CEO
4 V
EBO
j
stg
40 V
125 °C
−55~125 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Reverse transfer capacitance C
Transition frequency fT VCE = 6 V, IC = 1 mA 260 550 ⎯ MHz
Collector-base time constant Cc・rbb’ VCE = 6 V, I
Noise figure NF ⎯ 2.3 5.0 dB
Power gain Gpe
CBO
EBO
h
FE
re
VCB = 40 V, IE = 0 A ⎯ ⎯ 0.1 μA
VEB = 4 V, IC = 0 A ⎯ ⎯ 0.5 μA
(Note)
= 6 V, IC = 1 mA 40 ⎯ 200
V
CE
VCB = 6 V, f = 1 MHz ⎯ 0.55 ⎯ pF
= −1 mA, f = 30 MHz ⎯ ⎯ 20 ps
E
VCC = 6 V, IE = −1 mA,
f = 100 MHz, Figure 1
17 23 ⎯ dB
Note: hFE classification R: 40~80, O: 70~140, Y: 100~200
1
2007-11-01
L1: 0.8 mmφ silver plated copper wire, 4 T, 10 mm ID, 8 mm length
Figure 1 NF, Gpe Test Circuit
Marking
2SC4915
2
2007-11-01