Toshiba 2SC1815 Schematic [ru]
TOSHIBA T r ansistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current: V
I
• Excellent h
at V
: h
linearity : h
FE
FE (2)
CE
(IC = 0.1 mA)/hFE (IC = 2 mA)
FE
= 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 150 mA
Base current IB 50 mA
Collector power dissipation PC 400 mW
Junction temperature T
Storage temperature range T
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual r eliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
= 50 V (min),
CEO
= 150 mA (max)
C
= 100 (typ.)
= 6 V, IC = 150 mA
(Ta = 25°C)
CBO
CEO
EBO
j
stg
(Ta = 25°C)
60 V
50 V
5 V
125 °C
−55~125 °C
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
2SC1815
Unit: mm
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF
Base intrinsic resistance r
Noise figure NF
VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA
CBO
VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA
EBO
h
FE (1)
h
FE (2)
CE (sat)
BE (sat)
bb’
V
= 6 V, IC = 2 mA 70 ⎯ 700
(Note)
CE
VCE = 6 V, IC = 150 mA 25 100 ⎯
IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V
IC = 100 mA, IB = 10 mA ⎯ ⎯ 1.0 V
= 10 V, IE = −1 mA
V
CE
f = 30 MHz
= 6 V, IC = 0.1 mA
V
CE
f = 1 kHz, R
G
= 10 kΩ
⎯ 50 ⎯ Ω
⎯ 1.0 10 dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
1
2007-11-01
2SC1815
2
2007-11-01
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