Toshiba 2SC1627 DIAGRAMS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
· Complementary to 2SA817
· Driver stage application of 20 to 25 watts amplifiers.
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 600 mW
Junction temperature T
Storage temperature range T
(Ta ==== 25°C)
Electrical Characteristics
80 V
CBO
80 V
CEO
5 V
EBO
j
stg
(Ta ==== 25°C)
150 °C
-55~125 °C
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = 2 V, IC = 5 mA 0.55 ¾ 0.8 V
Transition frequency fT VCE = 10 V, IC = 10 mA ¾ 100 ¾ MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 10 ¾ pF
Note: h
classification O: 70~140, Y: 120~240
FE (1)
VCB = 50 V, IE = 0 ¾ ¾ 0.1 mA
CBO
VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA
EBO
(BR) CEOIC
h
FE (1)
(Note)
h
FE (2)
CE (sat)
= 5 mA, IB = 0 80 ¾ ¾ V
V
= 2 V, IC = 50 mA 70 ¾ 240
CE
VCE = 2 V, IC = 200 mA 40 ¾ ¾
IC = 200 mA, IB = 10 mA ¾ ¾ 0.5 V
1
2003-03-24
2SC1627
2
2003-03-24
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