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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB908
2SB908
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
• High DC current gain: h
• Low saturation voltage: V
• Complementary to 2SD1223.
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −4 A
Base current IB −0.4 A
Collector power
dissipation
Junction temperature Tj 150 °C
Storage temperature range T
(Ta = 25°C)
Ta = 25°C 1.0
Tc = 25°C
= 2000 (min) (VCE = −2 V, IC = −1 A)
FE (1)
CE (sat)
= −1.5 V (max) (IC = −3 A)
−100 V
CBO
−80 V
CEO
−5 V
EBO
P
C
−55 to 150 °C
stg
15
W
Equivalent Circuit
COLLECTOR
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
BASE
≈ 4.5 kΩ
≈ 300 Ω
EMITTER
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
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2SB908
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Turn-on time ton ― 0.15 ―
Switching time
Storage time t
Fall time t
Marking
(Ta = 25°C)
VCB = −100 V, IE = 0 ― ― −20 µA
CBO
VEB = −5 V, IC = 0 ― ― −2.5 mA
EBO
(BR) CEO
h
VCE = −2 V, IC = −1 A 2000 ― ―
FE (1)
h
VCE = −2 V, IC = −3 A 1000 ― ―
FE (2)
CE (sat)
BE (sat)
― 0.80 ―
stg
f
IC = −10 mA, IB = 0 −80 ― ― V
IC = −3 A, IB = −6 mA ― ― −1.5 V
IC = −3 A, IB = −6 mA ― ― −2.0 V
V
CC
OUTPUT
≈ −30 V
10 Ω
― 0.40 ―
µs
I
IN
PUT
B2
I
B1
IB2
B1
I
20 µs
= IB2 = 6 mA, DUTY CYCLE ≤ 1%
−I
B1
B908
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
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2SB908
−5
−4
(A)
C
−3
Collector current I
−1
0
0 −1 −2
Collector-emitter voltage VCE (V)
I
– VCE
C
−3 −5 −6 −4
Common emitter
Tc = 25°C
−500
−450
−400
−350
−300
−250
IB = −200 µA
0
−5
−4
(A)
C
−3
−2
Collector current I
−1
0
−1 −2
0
Collector-emitter voltage VCE (V)
I
– VCE
C
−3 −5 −6 −4
Common emitter
Tc = 100°C
−300
−250
−200
−175
−150
IB = −125 µA
0
−5
−4
(A)
C
−3
−2
Collector current I
−1
0
0
−1 −2 −3 −5 −6 −4
Collector-emitter voltage VCE (V)
I
– VCE
C
Common emitter
Tc = −55°C
−800
−700
−600
−500
IB = −400 µA
10000
5000
FE
3000
1000
DC current gain h
500
300
−0.1
0
Tc = 100°C
−0.3 −1 −10 −3
Collector current IC (A)
25
−55
h
– IC
FE
Common emitter
VCE = −2 V
−5
−3
V
CE (sat)
– IC
Common emitter
IC/IB = 500
(V)
CE (sat)
V
−1
−0.5
Collector-emitter saturation voltage
−0.3
−0.1
Tc = −55°C
25
100
−0.3 −1 −3
Collector current IC (A)
Base-emitter saturation voltage
−10
(V)
BE (sat)
V
−0.5
−5
−3
−1
−0.1
BE (sat)
25
100
– IC
Common emitter
IC/IB = 500
V
Tc = −55°C
−0.3 −1 −3
Collector current IC (A)
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2SB908
−5
−4
(A)
C
−3
−2
Collector current I
−1
100
25
– VBE
I
C
Tc = −55°C
Common emitter
VCE = −2 V
0
0
−0.8 −1.6 −2.4 −3.2 −4.8
Base-emitter voltage VBE (V)
−4.0
20
(W)
16
(1)
C
12
8
– Ta
P
C
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
4
(2)
Collector power dissipation P
(3)
0
0
40
Ambient temperature Ta (°C)
200 240 120 160 80
(A)
Collector current I
C
−10
−5
−3
−1
−0.5
−0.3
−0.1
−0.04
−1
Safe Operating Area
IC max (pulsed)*
IC max (continuous)
DC operation
Tc = 25°C
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
−3 −10 −30 −100
Collector-emitter voltage VCE (V)
1 ms*
10 ms*
V
CEO
max
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2SB908
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
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2002-07-23
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