TOSHIBA 2SA1313 Technical data
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent h
at V
• High voltage: V
• Complementary to 2SC3325
• Small package
Absolute Maximum Ratings
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −500 mA
Base current IB −50 mA
Collector power dissipation PC 200 mW
Junction temperature T
Storage temperature range T
linearity : h
FE
= −50 V (min)
CEO
Characteristics Symbol Rating Unit
= 25 (min)
FE (2)
= −6 V, IC = −400 mA
CE
(Ta = 25°C)
CBO
CEO
EBO
j
stg
−50 V
−50 V
−5 V
150 °C
−55~150 °C
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
2SA1313
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Base-emitter voltage VBE VCE = −1 V, IC = −100 mA ⎯ −0.8 −1.0 V
Transition frequency fT VCE = −6 V, IC = −20 mA ⎯ 200 ⎯ MHz
Collector output capacitance Cob VCB = −6 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF
Note: h
h
classification O: 70~140, Y: 120~240
FE (1)
classification O: 25 (min), Y: 40 (min)
FE (2)
(Ta = 25°C)
h
h
CE (sat)
VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA
CBO
VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA
EBO
FE (1)
(Note)
FE (2)
(Note)
= −1 V, IC = −100 mA 70 ⎯ 240
V
CE
= −6 V, IC = −400 mA 25 ⎯ ⎯
V
CE
IC = −100 mA, IB = −10 mA ⎯ −0.1 −0.25 V
2
2007-11-01
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