TOSHIBA 2SA1312 Technical data
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1312
2SA1312
Audio Frequency Low Noise Amplifier Applications
• High voltage: V
• Excellent h
h= 0.95 (typ.)
• High h
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
• Complementary to 2SC3324
• Small package
FE
FE: hFE
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −100 mA
Base current IB −20 mA
Collector power dissipation PC 150 mW
Junction temperature T
Storage temperature range T
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
= −120 V
CEO
linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 200~700
(Ta = 25°C)
CBO
CEO
EBO
j
stg
−120 V
−120 V
−5 V
125 °C
−55~125 °C
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
1
2007-11-01
2SA1312
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-emitter saturation voltage V
Transition frequency fT VCE = −6 V, IC = −1 mA ⎯ 100 ⎯ MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4 ⎯ pF
Noise figure
(Ta = 25°C)
CE (sat)
NF (1)
NF (2)
VCB = −120 V, IE = 0 ⎯ ⎯ −0.1 μA
CBO
VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA
EBO
h
FE
V
= −6 V, IC = −2 mA 200 ⎯ 700
(Note)
CE
IC = −10 mA, IB = −1 mA ⎯ ⎯ −0.3 V
V
= −6 V, IC = −0.1 mA, f = 100 Hz,
CE
Rg = 10 kΩ
V
= −6 V, IC = −0.1 mA, f = 1 kHz,
CE
Rg = 10 kΩ
⎯ 0.5 6
⎯ 0.2 3
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
dB
2
2007-11-01
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