TOSHIBA 1SV331 Technical data

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1 S V 3 3 1

Useful for VCO/TCXO

• Small Package

• High Capacitance Ratio : C

• Low Series Resistance : rs = 0.45 Ω (typ.)

Maximum Ratings

Characteristics Symbol Rating Unit

(Ta ==== 25°C)

1V/C4V

= 3.75 (typ.)

1SV331

Reverse voltage V

Junction temperature Tj 125 °C

Storage temperature range T

stg

R

10 V

−55~125 °C

000707EAA1

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of th
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in th
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.

• The information contained herein is subject to change without notice.

2000-07-24 1/3

1SV331

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Reverse voltage VR IR = 1 µA 10   V

Reverse current IR VR = 10 V   3 nA

Capacitance

Capacitance ratio C1V/C4V  3.5 3.75  

Series resistance rs V

(Ta ==== 25°C)

C1V VR = 1 V, f = 1 MHz 17 18 19

VR = 4 V, f = 1 MHz 4.25 4.8 5.43

C

4V

= 1 V, f = 470 MHz  0.45 0.7 Ω

R

Marking

V 9

pF

2000-07-24 2/3