TOSHIBA 1SV325 Technical data

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV325

1SV325

TCXO/VCO

· High capacitance ratio: C

· Low series resistance: r

· Useful for small size tuner.

Maximum Ratings

Characteristics Symbol Rating Unit

Reverse voltage V

Junction temperature T

Storage temperature range T

1 V/C4 V

= 0.4 Ω (typ.)

s

(Ta ==== 25°C)

Electrical Characteristics

= 4.3 (typ.)

R

j

stg

(Ta ==== 25°C)

Unit: mm

10 V

125 °C

-55~125 °C

JEDEC ―

JEITA ―

TOSHIBA 1-1G1A

Weight: 0.0014 g (typ.)

Characteristics Symbol Test Condition Min Typ. Max Unit

Reverse voltage V

Reverse current I

Capacitance C

Capacitance C

Capacitance ratio C

Series resistance r

Note: Signal level when capacitance is measured: Vsig = 500 mVfms

R

R

1 V

4 V

1 V/C4 V

s

IR = 1 mA 10 ¾ ¾ V

VR = 10 V ¾ ¾ 3 nA

VR = 1 V, f = 1 MHz 44 ¾ 49.5 pF

VR = 4 V, f = 1 MHz 9.2 ¾ 12 pF

VR = 4 V, f = 100 MHz ¾ 0.4 0.8 W

Marking

¾ 4 4.3 ¾ ¾

1

2003-03-24

1SV325

2

2003-03-24