TOREX XP161A11A1PR-G User Manual
A
(*)
XP161A11A1PR-G
Power MOSFET
■GENERAL DESCRIPTIO N
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 p ackage makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION/
MARKING
* x represents production lot number.
■EQUIVALENT CIRCUIT
1 1
G : Gate
1 x
S : Source
D : Drain
■FEATURES
Low On-State Resistance :
:
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
Rds(on)=0.065Ω@ Vgs=10V
Rds(on)=0.105Ω@ Vgs=4.5V
■PRODUCT NAME
PRODUCTS PACKAGE ORDER UNIT
XP161A11A1PR SOT-89 1,000/Reel
XP161A11A1PR-G
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
BSOLUTE MAXIMUM RATINGS
■
PARAMETER SYMBOL RA TINGS UNITS
Drain - Source Voltage Vdss 30 V
Gate - Source Voltage Vgss ±20 V
(*)
SOT-89 1,000/Reel
ETR1122_003
Ta = 25℃
Drain Current (DC) Id 4 A
Drain Current (Pulse) Idp 16 A
Reverse Drain Current Idr 4 A
Channel Power Dissipation *
Channel T emperature Tch 150 ℃
Storage Temperature Tstg -55~150 ℃
* When implemented on a ceramic PCB
Pd 2 W
1/5
XP161A11A1PR-G
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds=30V, Vgs= 0V - - 10 μA
Gate-Source Leak Current Igss Vgs= ±20V, Vds= 0V - - ±10 μA
Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 2.5 V
Drain-Source On-State Resistance*1
Forward Transfer Admittance *1 | Yfs | Id= 2A, Vds= 10V - 5.5 - S
Rds(on)
Id= 2A, Vgs= 10V - 0.05 0.065 Ω
Id= 2A, Vgs= 4.5V - 0.075 0.105 Ω
Ta = 25℃
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss
Output Capacitance Coss
Feedback Capacitance Crss
Switching Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Turn-On Delay Time td (on)
Rise Time
Turn-Off Delay T ime td (off)
Fall Time tf
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Thermal Resistance
(Channel-Ambience)
Vf If= 4A, Vgs= 0V - 0.85 1.1 V
Ta = 25℃
Vds= 10V, Vgs=0V
f= 1MHz
- 270 - pF
- 150 - pF
- 55 - pF
Ta = 25℃
- 10 - ns
tr - 15 - ns
Rth (ch-a) Implement on a ceramic PCB - 62.5 - ℃/W
Vgs= 5V , Id=2A
Vdd= 10V
- 35 - ns
- 15 - ns
2/5
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