TOREX XP152A12C0MR-G User Manual

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A

(*)

XP152A12C0MR-G

ETR1121_003

Power MOSFET

■GENERAL DESCRIPTIO N

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 p acka

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■PIN CONFIGURATION/

MARKING

■EQUIVALENT CIRCUIT

2 1 2

* x represents production lot number.

e makes high density mounting possible.

G：Gate

x

S：Source
D：Drain

■FEATURES

Low On-State Resistance :
:

Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : -2.5V
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free

Rds(on) = 0.3Ω@ Vgs = -4.5V
Rds(on) = 0.5Ω@ Vgs = -2.5V

■PINASSIGNMENT

PRODUCTS PACKAGE ORDER UNIT

XP152A12C0MR SOT-23 3,000/Reel

XP152A12C0MR-G

The “-G” suffix denotes Halogen and Antimony free as well as

being fully RoHS compliant.

BSOLUTE MAXIMUM RATINGS

■

Drain - Source Voltage Vdss -20 V

Gate - Source Voltage Vgss ±12 V

(*)

PARAMETER SYMBOL RA TINGS UNITS

SOT-23 3,000/Reel

Ta = 25℃

Drain Current (DC) Id -0.7 A
Drain Current (Pulse) Idp -2.8 A
Reverse Drain Current Idr -0.7 A

Channel Power Dissipation *

Channel T emperature Tch 150 ℃

Storage Temperature Tstg -55~150 ℃

* When implemented on a ceramic PCB

Pd 0.5 W

1/5

XP152A12C0MR-G

■ELECTRICAL CHARACTERISTICS

DC Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 μA

Gate-Source Leak Current Igss Vgs= ±12V, Vds= 0V - - ±10 μA

Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -0.5 - -1.2 V

Drain-Source On-State Resistance *1

Forward Transfer Admittance *1 | Yfs | Id= -0.4A, Vds= -10V - 1.5 - S

Rds(on)

Id= -0.4A, Vgs= -4.5V - 0.23 0.30 Ω
Id= -0.4A, Vgs= -2.5V - 0.37 0.50 Ω

Ta = 25℃

Body Drain Diode

Forward Voltage

*1 Effective during pulse test.

Dynamic Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Input Capacitance Ciss

Output Capacitance Coss

Feedback Capacitance Crss

Switching Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Turn-On Delay Time td (on)

Rise Time

Turn-Off Delay T ime td (off)

Fall Time tf

Thermal Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Vf If= -0.7A, Vgs= 0V - -0.8 -1.1 V

Vds= -10V, Vgs=0V

f= 1MHz

Ta = 25℃

- 180 - pF

- 120 - pF

- 60 - pF

Ta = 25℃

- 5 - ns

tr - 20 - ns

Vgs= -5V, Id= -0.4A

Vdd= -10V

- 55 - ns

- 70 - ns

2/5

Thermal Resistance

(Channel-Ambience)

Rth (ch-a)

Implement on a ceramic PCB

- 250 - ℃/W