TOREX XP135A1145SR User Manual
XP135A1145SR
ETR1116_001
Power MOSFET
■GENERAL DESCRIPTION
The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching
characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■FEATURES
Low On-State Resistance (Nch) :
:
Low On-State Resistance (Pch) :
:
Ultra High-Speed Switching
Driving Voltage : 4.5V (Nch) : -4.5V (Pch)
N-Channel/P-channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package : SOP-8
Rds (on) = 0.033Ω@ Vgs = 10V
Rds (on) = 0.045Ω@ Vgs = 4.5V
Rds (on) = 0.065Ω@ Vgs = -10V
Rds (on) = 0.110Ω@ Vgs = -4.5V
■PIN ASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
1 S1
2 G1 Gate (Nch)
3 S2
4 G2
5~6 D2
7~8 D1
■
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
Drain-Source Voltage Vdss 30 -30 V
Gate-Source Voltage Vgss
Drain Current (DC) Id 6 -4 A
Drain Current (Pulse) Idp 20 -16 A
Reverse Drain Current Idr 6 -4 A
Channel Power Dissipation *
Channel Temperature Tch 150
Storage Temperature Range
* When implemented on a glass epoxy PCB
Pd 2 W
Tstg -55~150
Source (Nch)
Source (Pch)
Gate (Pch)
Drain (Pch)
Drain (Nch)
Ta = 25℃
RATINGS
Nch Pch
±20 ±20
UNITS
V
℃
℃
1/8
XP135A1145SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics (N-channel Power MOSFET)
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 μA
Gate-Source Leak Current Igss Vgs=±20V, Vds= 0V - - ±1 μA
Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 2.5 V
Drain-Source On-State Resistance *1 Rds(on)
Forward Transfer Admittance *1 | Yfs | Id= 3A, Vds= 10V - 12 - S
Id= 3A, Vgs= 10V - 0.026 0.033 Ω
Id= 3A, Vgs= 4.5V - 0.035 0.045 Ω
Ta = 25℃
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss
Output Capacitance Coss
Feedback Capacitance Crss
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Turn-On Delay Time td (on)
Rise Time
Turn-Off Delay Time td (off)
Fall Time tf
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Vf If= 6A, Vgs= 0V - 0.85 1.1 V
Ta = 25℃
Vds= 10V, Vgs=0V
f= 1MHz
- 620 - pF
- 350 - pF
- 120 - pF
Ta = 25℃Switching Characteristics
- 15 - ns
tr - 20 - ns
Vgs= 5V, Id= 3A
Vdd= 10V
- 30 - ns
- 10 - ns
2/8
Thermal Resistance
(Channel-Ambience)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
- 62.5 - ℃/W
■ELECTRICAL CHARACTERISTICS (Continued)■ELECTRICAL CHARACTERISTICS (Continued)
DC Characteristics (P-channel Power MOSFET)
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds= -30V, Vgs= 0V - - -10 μA
Gate-Source Leak Current Igss Vgs=±20V, Vds= 0V - - ±1 μA
Gate-Source Cut-Off Voltage Vgs(off) Id= -1mA, Vds= -10V -1.0 - -2.5 V
Drain-Source On-state Resistance *1 Rds(on)
Forward Transfer Admittance *1 | Yfs | Id= -2A, Vds= -10V - 5 - S
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss
Output Capacitance Coss
Feedback Capacitance Crss
Switching Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Turn-On Delay Time td (on)
Rise Time
Turn-Off Delay Time td (off)
Fall Time tf
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Vf If= -4A, Vgs= 0V - -0.85 -1.1 V
tr - 20 - ns
Id= -2A, Vgs= -10V - 0.055 0.065 Ω
Id= -2A, Vgs= -4.5V - 0.09 0.11 Ω
Vds= -10V, Vgs= 0V
f= 1MHz
Vgs= -5V, Id= -2A
Vdd= -10V
- 680 - pF
- 450 - pF
- 170 - pF
- 15 - ns
- 30 - ns
- 20 - ns
XP135A1145SR
Ta = 25℃
Ta = 25℃
Ta = 25℃
Thermal Resistance
(Channel-Ambience)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
- 62.5 - ℃/W
3/8
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