TOREX XP134A11A1SR User Manual

XP134A11A1SR

ETR1114_001

Power MOSFET

■GENERAL DESCRIPTION

The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■PIN CONFIGURATION ■PINASSIGNMENT

■EQUIVALENT CIRCUIT

■FEATURES

Low On-State Resistance :Rds(on)=0.065Ω(Vgs=-10V)
:Rds(on)=0.11Ω(Vgs=-4.5V)

Ultra High-Speed Switching

Driving Voltage : -4.5V

P-Channel Power MOSFET

DMOS Structure

Two FET Devices Built-in

Package : SOP-8

PIN NUMBER PIN NAME FUNCTION

1 S1

2 G1 Gate

3 S2

4 G2

5~6 D2

7~8 D1

■

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNITS

Drain-Source Voltage Vdss -30 V

Gate-Source Voltage Vgss ±20 V

Drain Current (DC) Id -4 A

Drain Current (Pulse) Idp -16 A

Reverse Drain Current Idr -4 A

Channel Power Dissipation *

Channel Temperature Tch 150 ℃

Pd 2 W

Source

Source

Gate

Drain

Drain

Ta = 25℃

Storage Temperature Range Tstg -55~150 ℃

* When implemented on a glass epoxy PCB

1/5

XP134A11A1SR

■ELECTRICAL CHARACTERISTICS

DC Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Drain Cut-Off Current Idss Vds=-30V, Vgs=0V - - -10 μA

Gate-Source Leak Current Igss Vgs=±20V, Vds=0V - - ±1 μA

Gate-Source Cut-Off Voltage Vgs(off) Id=-1mA, Vds=-10V -1.0 - -2.5 V

Drain-Source On-State Resistance *

Forward Transfer Admittance * | Yfs | Id=-2A, Vds=-10V - 5 - S

Body Drain Diode

Forward Voltage

*Effective during pulse test.

Rds(on)

Vf If=-4A, Vgs=0V - -0.85 -1.1 V

Dynamic Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Input Capacitance Ciss

Output Capacitance Coss

Feedback Capacitance Crss

Switching Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Turn-On Delay Time td (on)

Rise Time

Turn-Off Delay Time td (off)

Fall Time tf

Thermal Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

tr - 20 - ns

Id=-2A, Vgs=-10V - 0.055 0.065 Ω

Id=-2A, Vgs=-4.5V - 0.09 0.11 Ω

Vds=-10V, Vgs=0V

f=1MHz

Vgs=-5V, Id=-2A

Vdd=-10V

- 680 - pF

- 450 - pF

- 170 - pF

- 15 - ns

- 30 - ns

- 20 - ns

Ta = 25℃

Ta = 25℃

Ta = 25℃

2/5

Thermal Resistance

(Channel-Ambience)

Rth (ch-a)

Implement on a glass epoxy

resin PCB

- 62.5 - ℃/W