TOREX XP133A1330SR User Manual

XP133A1330SR

ETR1113_001

Power MOSFET

■GENERAL DESCRIPTION

The XP133A1330SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics. Two FET devices are built into the one package
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■PIN CONFIGURATION ■PINASSIGNMENT

■EQUIVALENT CIRCUIT

■FEATURES

Low On-State Resistance

:

:

Ultra High-Speed Switching

Driving Voltage : 1.5V

N-Channel Power MOSFET

DMOS Structure

Two FET Devices Built-in

Package : SOP-8

PIN NUMBER PIN NAME FUNCTION

1 S1

2 G1 Gate

3 S2

4 G2

5~6 D2

7~8 D1

■

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNITS

Drain-Source Voltage Vdss 20 V

Gate-Source Voltage Vgss ±8 V

Drain Current (DC) Id 6 A

Drain Current (Pulse) Idp 20 A

:

Rds(on)= 0.03Ω(Vgs = 4.5V)

Rds(on)= 0.04Ω(Vgs = 2.5V)

Rds(on)= 0.07Ω(Vgs = 1.5V)

Source

Source

Gate

Drain

Drain

Ta = 25 ℃

Reverse Drain Current Idr 6 A

Channel Power Dissipation *

Channel Temperature Tch 150 ℃

Storage Temperature Range Tstg -55~150 ℃

* When implemented on a glass epoxy PCB

Pd 2 W

1/5

XP133A1330SR

■ELECTRICAL CHARACTERISTICS

DC Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Drain Cut-Off Current Idss Vds=20V, Vgs=0V - - 10 μA

Gate-Source Leak Current Igss Vgs=±8V, Vds=0V - - ±1 μA

Gate-Source Cut-Off Voltage Vgs(off) Id=1mA, Vds=10V 0.5 - 1.2 V

Id=3A, Vgs=4.5V - 0.025 0.030 Ω

Drain-Source On-State Resistance * Rds(on)

Forward Transfer Admittance * | Yfs | Id=3A, Vds=10V - 20 - S

Body Drain Diode

Forward Voltage

* Effective during pulse test.

Vf If=6A, Vgs=0V - 0.85 1.1 V

Dynamic Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Input Capacitance Ciss

Output Capacitance Coss

Feedback Capacitance Crss

Switching Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Turn-On Delay Time td (on)

Rise Time

Turn-Off Delay Time td (off)

Fall Time tf

Thermal Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

tr

Id=3A, Vgs=2.5V - 0.030 0.040 Ω

Id=1A, Vgs=1.5V - 0.045 0.070 Ω

Vds=10V, Vgs=0V

f=1MHz

Vgs=5V, Id=3A

Vdd=10V

-

-

-

-

-

-

- 15 - ns

950

430

180

15

20

80

-

-

-

-

-

-

Ta = 25℃

Ta = 25℃

pF

pF

pF

Ta = 25℃

ns

ns

ns

2/5

Thermal Resistance

(Channel-Ambience)

Rth (ch-a)

Implement on a glass epoxy

resin PCB

- 62.5 - ℃/W