TOREX XP132A1635SR User Manual

XP132A1635SR

ETR1110_001

Power MOSFET

■GENERAL DESCRIPTION

The XP132A1635SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching

characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■PIN CONFIGURATION

■EQUIVALENT CIRCUIT

■FEATURES

Low On-State Resistance

:

Ultra High-Speed Switching

Driving Voltage : -2.5V

P-Channel Power MOSFET

DMOS Structure

Package : SOP-8

:

Rds(on)=0.033Ω(Vgs=-4.5V)

Rds(on)=0.055Ω(Vgs=-2.5V)

■PINASSIGNMENT

PIN NUMBER PIN NAME FUNCTION

1~3 S Source

4 G Gate

5~8 D Drain

ABSOLUTE MAXIMUM RATINGS

■

Ta = 25 ℃

PARAMETER SYMBOL RATINGS UNITS

Drain-Source Voltage Vdss -20 V

Gate-Source Voltage Vgss ±12 V

Drain Current (DC) Id -8 A

Drain Current (Pulse) Idp -32 A

Reverse Drain Current Idr -8 A

Channel Power Dissipation *

Channel Temperature Tch 150 ℃

Storage Temperature Range Tstg -55~150 ℃

Pd 2.5 W

* When implemented on a glass epoxy PCB

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XP132A1635SR

■ELECTRICAL CHARACTERISTICS

DC Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Drain Cut-Off Current Idss Vds=-20V, Vgs=0V - - -10 μA

Gate-Source Leak Current Igss Vgs=±12V, Vds=0V - - ±1 μA

Gate-Source Cut-Off Voltage Vgs(off) Id=-1mA, Vds=-10V -0.5 - -1.2 V

Drain-Source On-State Resistance * Rds(on)

Forward Transfer Admittance * | Yfs | Id=-4A, Vds=-10V - 16 - S

Body Drain Diode

Forward Voltage

* Effective during pulse test.

Vf If=-8A, Vgs=0V - -0.85 -1.1 V

Dynamic Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Input Capacitance Ciss

Output Capacitance Coss

Feedback Capacitance Crss

Switching Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Turn-On Delay Time td (on)

Rise Time

Turn-Off Delay Time td (off)

Fall Time tf

Thermal Characteristics

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Thermal Resistance

(Channel-Ambience)

tr - 45 - ns

Rth (ch-a)

Id=-4A, Vgs=-4.5V - 0.025 0.033 Ω

Id=-4A, Vgs=-2.5V - 0.040 0.055 Ω

Vds=-10V, Vgs=0V

f=1MHz

Vgs=-5V, Id=-4A

Vdd=-10V

Implement on a glass epoxy

resin PCB

- 1700 - pF

- 1000 - pF

- 500 - pF

- 15 - ns

- 70 - ns

- 65 - ns

- 50 - ℃/W

Ta = 25℃

Ta = 25℃

Ta = 25℃

2/5