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XP132A1545SR
ETR1109_001
Power MOSFET
■GENERAL DESCRIPTION
The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION ■PINASSIGNMENT
■EQUIVALENT CIRCUIT
■FEATURES
Low On-State Resistance
:
Ultra High-Speed Switching
Driving Voltage : -4.5V
P-Channel Power MOSFET
DMOS Structure
Package : SOP-8
PIN NUMBER PIN NAME FUNCTION
1~3 S Source
4 G Gate
5~8 D Drain
ABSOLUTE MAXIMUM RATINGS
■
PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -30 V
Gate-Source Voltage Vgss ±20 V
Drain Current (DC) Id -8 A
Drain Current (Pulse) Idp -32 A
Reverse Drain Current Idr -8 A
Channel Power Dissipation *
Channel Temperature Tch 150 ℃
Storage Temperature Range Tstg -55~150 ℃
:
Rds(on)=0.03Ω(Vgs=-10V)
Rds(on)=0.045Ω(Vgs=-4.5V)
Ta = 25 ℃
Pd 2.5 W
* When implemented on a glass epoxy PCB
1/5
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XP132A1545SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds=-30V, Vgs=0V - - -10
Gate-Source Leak Current Igss Vgs=±20V, Vds=0V - -
Gate-Source Cut-Off Voltage Vgs(off) Id=-1mA, Vds=-10V -1.0 - -2.5 V
Drain-Source On-State Resistance *
Forward Transfer Admittance * | Yfs | Id=-4A, Vds=-10V - 11 - S
Body Drain Diode
Forward Voltage
* Effective during pulse test.
Rds(on)
Vf If=-8A, Vgs=0V - -0.85 -1.1 V
Id=-4A, Vgs=-10V - 0.025 0.030 Ω
Id=-4A, Vgs=-4.5V - 0.038 0.045 Ω
Dynamic Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance Ciss
Output Capacitance Coss
Feedback Capacitance Crss
Switching Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Turn-On Delay Time td (on)
Rise Time
Turn-Off Delay Time td (off)
Fall Time tf
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Vds=-10V, Vgs=0V
f=1MHz
tr - 45 - ns
Vgs=-5V, Id=-4A
Vdd=-10V
- 1500 - pF
- 1000 - pF
- 500 - pF
- 20 - ns
- 40 - ns
- 35 - ns
±
1
Ta = 25℃
μ
A
μ
A
Ta = 25℃
Ta = 25℃
2/5
Thermal Resistance
(Channel-Ambience)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
- 50 - ℃/W