XP131A1235SR
ETR1102_001
Power MOSFET
■GENERAL DESCRIPTION
The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■FEATURES
Low On-State Resistance : Rds(on)=0.035Ω(Vgs=4.5V)
: Rds(on)=0.048Ω(Vgs=2.5V)
Ultra High-Speed Switching
Driving Voltage : 2.5V
N-Channel Power MOSFET
DMOS Structure
Package : SOP-8
■PINASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
1~3 S Source
4 G Gate
5~8 D Drain
ABSOLUTE MAXIMUM RATINGS
■
Ta = 2 5 ℃
PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id 7 A
Drain Current (Pulse) Idp 30 A
Reverse Drain Current Idr 7 A
Channel Power Dissipation *
Channel Temperature Tch 150 ℃
Storage Temperature Range Tstg -55~150 ℃
Pd 2.5 W
* When implemented on a glass epoxy PCB
1/5
XP131A1235SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Drain Cut-Off Current Idss Vds=20V, Vgs=0V - - 10 μA
Gate-Source Leak Current Igss Vgs=±12V, Vds=0V - - ±1 μA
Gate-Source Cut-Off Voltage Vgs(off) Id=1mA, Vds=10V 0.5 - 1.2 V
Drain-Source On-State Resistance * Rds ( on)
Forward Transfer Admittance *
Body Drain Diode
Forward Voltage
* Effective during pulse test.
Dynamic Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Input Capacitance
Output Capacitance Coss
Feedback Capacitance
Switching Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Turn-On Delay Time td ( on )
Rise Time tr
Turn-Off Delay Time td ( off )
Fall Time tf
Thermal Characteristics
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS
Thermal Resistance
( channel-ambience )
Rth (ch-a)
| Yfs |
Vf If=7A, Vgs=0V - 0.85 1.1 V
Ciss
Crss
Id=4A, Vds=4.5V - 0.025 0.035 Ω
Id=4A, Vgs=2.5V - 0.035 0.048 Ω
Id=4A, Vds=10V - 16 - S
Vds = 10V , Vgs = 0V
f = 1MHz
Vgs = 5V , Id = 4A
Vdd = 10V
Implement on a glass epoxy
resin PCB
- 760 - pF
- 430 - pF
- 200 - pF
- 10 - ns
- 20 - ns
- 55 - ns
- 15 - ns
- 50 - ℃/W
Ta = 25℃
Ta = 25℃
Ta = 25℃
2/5
Loading...