The XC9119D10A series is 1MHz, PWM controlled step-up DC/DC converter, designed to allow the use of ceramic
capacitors. With a built-in 2.0Ω switching transistor, the XC91 19D10A series can easily provide a step-up operation by using
only a coil, a diode, a capacitor, and a resistor, connected externally.
Since output voltage up to 19.5V (Maximum Lx operating voltage: 20V) ca n be derived with reference voltage supp ly of 1.0V
(±2.0%) and external components, the series can easily supply high voltage for various general-purpose pow er supplies, LCD
panels and organic EL displays.
With a high switching frequency of 1.0MHz, a low profile and small boar d area solution can be achieved using a chip coil and
an ultra small ceramic output capacitor.
With the current limit function (400mA (TYP.): V
limited.Soft-start time can be adjusted by external resistors and capacitors. The stand-by function enables the output to
be turned off (CE ’L’), that is, the supply current will be less than 1.0μA.
■APPLICATIONS
●Organic electroluminescence display (OELD)
●Power supplies for LCD panels
●Various general-purpose power supplies
TYPICAL APPLICATION CIRCUIT
DD=3.6V), a peak current, which flows through built-in driver transistors can be
FEATURES
Operating Voltage Range : 2.5V ~ 6.0V
Output Voltage Range : Up to 19.5V externally set-up
: Reference voltage 1.0V +
Oscillation Frequency : 1.0MHz±20%
ON Resistance : 2.0Ω (V
Efficiency : 86%
Control : PWM control
Stand-by function : I
Load Capacitor : Low ESR ceramic capacitor
Ultra Small Packages : SOT-25, USP-6C
Lx Limit Current : 400mA (V
package should be solder-plated in
recommended mount pattern and metal
masking so as to enhance mounting
strength and heat resistance. If the pad
needs to be connected to other pins, it
should be connected to the V
SS pin.
①② Reference Voltage 10 FB voltage
③ Oscillation Freque ncy A 1MHz
MR SOT-25
④⑤‑⑥
(*1)
The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
(*2)
The device orientation is fixed in its embossed tape pocket. For reverse orientation, please contact your local Torex sales office o
Lx Pin Voltage VLx VSS – 0.3 ~ 22.0 V
FB Pin Voltage VFB VSS – 0.3 ~ 7.0 V
CE Pin Voltage VCE VSS – 0.3 ~ 7.0 V
Lx Pin Current ILx 1000 mA
Power Dissipation
SOT-25 250
USP-6C
Pd
Operating Temperature Range Topr - 40 ~ + 85
Storage Temperature Range Tstg - 55 ~ +125
PWM Comparat or
120
Current
Limit & Feedback
logic
Buffer
Driver
Ta = 25OC
mW
O
C
O
C
XC9119D10A
Series
X
L
V
SS
3/18
■
■
XC9119D10ASeries
ELECTRICAL CHARACTERISTICS
XC9119D10AMR
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT
FB Voltage VFB - 0.9801.000 1.020 V ①
Line Regulation
△VFB/
△VIN・VFB
2.5<VDD<6.0V - 0.05 0.20 %/V ①
Supply Voltage VDD - 2.5 - 6.0 V ①
Operation Start-up
Voltage
Supply Current 1 IDD1
Supply Current 2 IDD2
VST1 IOUT=0mA - - 2.5 V ②
FB=2.0V
- 450 700 μA ②
- 55 110 μA ②
Stand-by Current ISTB VCE=0V - - 1.0 μA ③
Oscillation Frequency f
Maximum Duty Ratio MAXDTY Same as IDD1
Efficiency (*1) EFFI
Same as IDD1 0.8 1.0 1.2 MHz②
OSC
VIN=VDD=3.6V, VOUT=15V,
OUT=10mA
I
86 92 98 % ②
- 86 - % ①
Current Limit ILIM VDD=3.6V 310 400 750 mA ④
Lx Operating Voltage
Range
VLx VOUT=18V - - 20.0 V ①
Lx Switch On Resistance RSWON VDD=3.6V, VLx=0.4V, Rpull=10Ω- 2.0 4.0 Ω ②
Lx Leak Current ILxLSame as ISTB
CE “High” Voltage VCEH
CE “Low” Voltage VCEL
Soft-Start
Threshold Voltage
VSST
Applied voltage to CE when Lx pin
voltage holding “H””L” level
Applied voltage to CE when Lx pin
voltage holding “H” level
FB=0.95V, Appli ed volt age to CE
when Lx voltage holding “H””L” level
- - 1 μA ③
0.65 - - V ②
- - 0.20 V ②
1.3 1.6 1.9 V ②
CE “High” Current ICEHSame as IDD2 -0.1 - 0.1 μA ③
CE “Low” Current ICELSame as ISTB -0.1 - 0.1 μA ③
FB “High” Current IFBHSame as IDD2 -0.1 - 0.1 μA ③
FB “Low” Current IFBLSame as ISTB -0.1 - 0.1 μA ③
Test Condition: Unless otherwise stated, VIN=3.0V, VCE=3.0V, Vpull=5.0V, Rpull=100Ω.
NOTE:
*1: EFFI={(output voltage x output current) / (input voltage) x (input current)} x 100
TYPICAL APPLICATION CIRCUIT
V
IN
2.5V~6.0V
(above 2.5V)
Vcont
R
SS
L
V
DD
Lx
SD
RFB1
VOUT
(up to 19.5V)
C
FB
Ta = 25OC
CIRCUI
T
4/18
C
IN
CE/SSFB
V
C
SS
SS
R
FB2
C
L
XC9119D10A
■OPERATIONAL EXPLANATION
The XC9119D10A series consists of a reference voltage source, ramp wave circuit, error amplifier, PWM comparator, phase
compensation circuit, driver transistor, current limiter circuit and others. The series ICs compare, using the error amplifier, the
voltage of the internal reference voltage source with the feedback voltage from the FB pin. Phase compensation is performed
on the resulting error amplifier output, to input a signal to the PWM comparator to determine the turn-on time during switching.
The PWM comparator compares, in terms of volt age level, the signal from the error amplifier with the ramp wave from the ramp
wave circuit, and delivers the resulting output to the buffer drive circuit to cause the Lx pin to output a switching duty cycle.
This process is continuously performed to ensure stable output v oltage. The curr ent feedback circuit detects the N-channel
MOS driver transistor's current for each switching operation, and modulates the error amplifier output signal to provide multiple
feedback signals. This enables a stable feedback loop even when a low ESR capacitor, such as a ceramic capacitor, is used,
ensuring stable output voltage.
<Reference Voltage Source>
The reference voltage source provides the reference voltage to ensure stable output voltage of the IC.
<Ramp Wave Circuit>
The ramp wave circuit determines switching frequency. The 1MHz (TYP.) of frequency is fixed internally. Clock pulses
generated in this circuit are used to produce ramp waveforms needed for PWM operation.
<Error Amplifier>
The error amplifier is designed to monitor output voltage. The amplifier compares the reference voltage with the FB pin
voltage. Whe n a voltage lower th an the r eference v oltage is fed back, the output voltage of the error amplifier increases.
Gain and frequency characteristics of the error a mpli fier output are fixed in terna lly as an optimize signal .
<Current Limit >
The current limit circuit of the XC9119D10A series monitors the current flowing through the N-channel MOS driver
transistor connected to the Lx pin, and features a combination of the constant-current type current limit mode and the
duty cycle limit of the next pulse.
①When the driver current is greater than a specific level, the constant-current ty pe current limit function operates to turn
off the pulses from the Lx pin at any given timing.
②The IC controls the next pulse to be smaller than the first pulse.
Series
Current Limit
IL
Lx
1
The current will be off when the coil current
reaches the value of the c onstant current limit.
Current Limit
2
Limit some duty pulses after the limit.
<CE Pin Function>
The operation of the XC9119D10A series will enter into the shut down mode when a low level signal is input to the CE
pin. During the shut down mode, the su pp ly current is 0μA (TYP.), with high impedance at the Lx pin. The IC starts its
operation with a high level signal to the CE pin. The input to the CE pin is a CMOS input and the sink current is 0μA
(TYP.). The hysteresis between the chip enable and the chip disab le is 50mV (TYP.).
<Soft-Start T ime>
Soft-start function operates when capacitors and resistors are connected to the CE/SS pin. With the Vref voltage limited
by the CE/SS pin start-up voltage and applying the input to the error amps, the operation maintains a balance between
the two inputs of the error amps. and controls the Lx pin’s ON time so that it doesn’t increase more than is necessary.
Depending of current limit function, load current, step-up ratio, and external components, the IC takes about 500uS to 5mS
to attain the setting voltage after applying the CE ‘H’ voltage even though the R
connected. (F or a numer ical co nstant, pl ease refe r to Note on Use.) For longer soft-start time, please connect R
SS is 0Ω and a soft start capacitor CSS is not
SS and CSS.
Soft-start function operates while the CE pin voltage is between 0V to around 1.9V. Please be noted that if th e C E/SS pin volt age
does not start from 0V but is in intermediate potential when the power is turned on etc., soft start function may lose an effect and
that will cause a high inrush current and ripple voltage.
5/18
■
XC9119D10ASeries
OPERATIONAL EXPLANATION (Continued)
<CE/SS (Pin No. 4): Chip Enable / Soft-Start Pin>
Pin No. 4 can be used as in either chip enable (CE) pin or sof t-start (SS) pin. The IC takes about 5ms at most to attain the setting
voltage after starting operation (CE ‘H’) even though the R
Soft-start function is good for setting a longer time than the start-up time when the R
Soft-start operates while the CE pin voltage increases from 0V to around 1.9V. The following equation is used with the values of
Vcont voltage, the R
Please connect the anode of an Schottky barrier diode and inductor to the Lx pin.
<FB (Pin No. 3): Voltage Feedback Pin>
The reference voltage is 1.0V (TYP.). Output voltage is approximated by the following equation according to the value
for two resistors (R
V
OUT = RFB1 / RFB2 + 1
Output voltage should be set as to fill V
Please adjust the C
about 500Hz. According to the usa ge, adjusting the inductance value, the load capacity value, and so on to the most
suitable operation.
Typical example:
VOUT
(V)
3.3 300 130 1000
5.0 300 75 1000
7.0 180 30 1800
10.0 270 30 1200
15.0 510 36 510
18.0 510 30 510
DD (Pin No. 5): Power Supply Pin>
<V
Please connect an input by-pass capacitor (C
●Application Information
<Obtaining VDD from other source than VIN>
In case that the input voltage V
operations with the input voltage less than 2.5V when voltage from 2.5V to 6.0V is applied to the power source. Please
connect more than 1uF of C
Ex.) When V
1. Please do not exceed the value of stated absolute maximum ratings.
2. The DC/DC converter performance is greatly influenced by not only the ICs’ characteristics, but also by those of the
3. Make sure that the PCB GND traces are as thick as possible, as variations in ground potential caused b y high ground
4. Please mount each external component as close to the IC as possible and use thick, short connecting traces to reduce
5. Please set up the output voltage value so that the Lx pin voltage does not exceed 20V.
OUT=40mA.
to I
NOTES ON USE
external components. Care must be taken when selecting the external components.
currents at the time of switching may result in instability of the IC.
the circuit impedance.
FB1 and RFB2). The sum of the two resistors should be 1MΩ or less.
OUT<(Maximum value of VLx) – (VF of Schottky diode).
FB value of the speed–up capacitor for phase compensation so that fzfb=1/(2
RFB1
(kΩ)
RFB2
(kΩ)
CFB
(pF)
π
x CFB x RFB1) will be
IN).
IN and power source VDD in the step-up circuit are isolated, the circuit starts step-up
DD between the VDD pin and the VSS pin as close as possible.
DD=3.6V, VIN=1.8V, VOUT=5.0V (RFB1=300kΩ, RFB2=75kΩ, CFB=1000pF, CL=10μF), the IC can operate up
V
2.5V~6V
V
IN
DD
C
IN
4.7uF
C
DD
R
SS
C
SS
V
DD
CE/SS
L
SS
V
Lx
FB
SD
R
FB1
C
FB
C
L
10uF
R
FB2
Series
7/18
■
XC9119D10ASeries
TEST CIRCUITS
Circuit ①
Circuit ②Circuit ③
A
V
IN
V
IN
1uF
CEFB
V
CE
V
SS
Circuit ④
V
IN
4.7uF/10V
(ceramic)
V
IN
CEFB
VCE
1. The measurement method of Lx On resistance RSWON
Using the circuit ②, Lx On resistance can be measured by adjusting Vpull voltage to set Lx voltage V
driver transistor is ON. The oscilloscope is used for measuring the Lx voltage when the driver transistor is ON.
R
SWON = 0.4 / {(Vpull – 0.4) / 10}
2. The measurement method of current limit I
Using the circuit ④, current limit I
decreased while Vpull voltage is adjusted and Lx voltage V
for measuring the Lx voltage when the driver transistor is ON.
ILIM=(Vpull – VLx) / Rpull
OSC
Lx
Rpull
A
220uF
VIN
Vpull
V
FB
10Ω
OSC
Lx
SS
V
2SK583
LIM
LIM can be calculate by the equation including Vpull voltage when FB voltage is
300Ω
100uF/16V
(OS capacitor)
R2
4.3kΩ
R1
1.1kΩ
0.01uF
(ceramic)
Lx when the driver transistor is ON. The oscilloscope is used
1uF
10V
Vpull
V
VINLx
AAA
CEFB
SS
V
VCE
47uF/25V
(OS capacitor)
VFB
VLx
Lx x 0.4V when the
8/18
■
m
m
m
m
)
m
)
m
XC9119D10A
Series
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Output Voltage vs. Output Current
(V)
OUT
CFB=1000pF(Ceramic),RFB1=300kohm,RFB2=75koh
5.3
5.2
5.1
5.0
4.9
4.8
Output voltage: V
4.7
0.11101001000
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Ta=25oC
VIN=2.5V
Load current: I
OUT
3V
(mA )
4.5V
CFB=1200pF(Ceramic),RFB1=270kohm,RFB2=30koh
11.0
Ta=25oC
(V)
10.5
OUT
10.0
9.5
Output voltage: V
9.0
0.11101001000
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
16.0
(V)
15.5
OUT
15.0
14.5
Output voltage: V
14.0
0.11101001000
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
VIN=5V
VIN=2.5V,3V
Load current I
OUT
VIN=6V
(mA )
Ta=25oC
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30koh
19.0
(V)
18.5
OUT
18.0
17.5
VIN=2.5V,3V
Output voltage: V
17.0
0.11101001000
(2) Efficiency vs. Output Current
Eff iciency: EFFI(%
CFB=1000pF(Ceramic),RFB1=300kohm,RFB2=75koh
100
90
80
70
60
50
40
30
20
10
0
0.11101001000
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Load current: I
VOUT=5V
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
4.5V
4.2V
VIN=2.5V
OUT
2.7V
3.6V
3V
Ta=25oC
(mA )
CFB=1200pF(Ceramic),RFB1=270kohm,RFB2=30koh
100
90
80
70
60
50
40
30
Efficiency: EFFI(%
20
10
0
0.11101001000
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
VIN=3V
VIN=2.5V
Load current: I
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Load current: I
OUT
VIN=5V
OUT
VIN=6V
(mA)
VIN=6V
(mA)
VOUT=10V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
VIN=2.5V
2.7V
3V
Load current: I
OUT
(mA)
VIN=5V
Ta=25oC
6V
5V
4.2V
3.6V
Ta=25oC
9/18
■
)
m
)
m
)
m
)
m
m
m
XC9119D10ASeries
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(2) Efficiency vs. Output Current (Continued)
Eff iciency: EFFI(%
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
100
90
80
70
60
50
40
30
20
10
0
0.11101001000
VOUT=15V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
6V
4.2V
VIN=2.5V
Load current: I
2.7V
OUT
3.6V
3V
Ta=25oC
(mA)
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=30koh
100
5V
90
80
70
60
50
40
30
Eff iciency: EFFI(%
20
10
0
0.11101001000
Efficiency: EFFI(%
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
100
90
80
70
60
50
40
30
20
10
0
0.11101001000
VOUT=15V
VI N=VDD=VCE=3 .6V, L :CDRH4D18C
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
L=22uH
L=10uHL=4.7uH
Ta=25oC
Load current: I
OUT
(mA)
100
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
90
80
CDRH4D18C
70
60
50
40
30
Eff iciency: EFFI(%
20
10
0
0.1110100
(3) Ripple Voltage vs. Output Current
Ripple Voltage: Vr (mV)
CFB=1000pF(Ceramic),RFB1=300kohm,RFB2=75koh
100
Ta=25oC
80
60
40
20
0
0.11101001000
VOUT=5V
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
4.2V
3.6V
VIN=2.5V,2.7V,3V
Load current: I
OUT
(mA )
4.5V
CFB=1200pF(Ceramic),RFB1=270kohm,RFB2=30koh
100
Ta=25oC
80
VIN=2.5V,2.7V,3V,3.6V,4.2V
60
40
20
Ripple Voltage: Vr (mV)
0
0.11101001000
10/18
VOUT=18V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
4.2V
VIN=2.5V
Load current: I
2.7V
OUT
3.6V
3V
Ta=25oC
(mA)
VOUT=15V
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Load current: I
VIN=VDD=VCE=3.6V,L =22uH
OUT
VLF3010
Ta=25oC
(mA)
NR3010
VOUT=10V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
6V
5V
Load current: I
OUT
(mA)
6V
5V
■
m
m
:
XC9119D10A
Series
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Ripple Voltage vs. Output Current (Continued)
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
100
Ta=25oC
80
60
VIN=2 .5 V ,2 .7 V,3 V ,4 .2 V,5 V
40
20
Ripple Voltage: Vr (mV)
0
0.11101001000
VOUT=15V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
6V
Load current: I
OUT
(mA)
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
100
Ta=25oC
80
60
VIN=2.5V,2.7V,3V,4.2V,5V
40
20
Ripple Voltage: Vr (mV)
0
0.11101001000
(4) Maximum Output Current vs. Input Voltage
(5) Feedback Voltage vs. Chip Enable Voltage
Maximum load current
450
400
350
300
250
200
150
IOUT_MAX(mA)
100
50
0
234567
VIN=VDD=VCE=3.6V,SD:XBS104S14R
CIN=4.7uF(Ceramic),CL=10uF(Ceramic)
VOUT=5V
L=4.7uH
10V
L=22uH
15V
L=22uH
18V
L=22uH
1.2
(V)
1.0
FB
0.8
0.6
0.4
0.2
Feedback Voltage: V
0.0
00.511.52
I nput Voltage V
(V)
IN
(6) Supply Current 1 vs. Supply Voltage
(7) Supply Current 2 vs. Supply Voltage
(uA)
DD1
1200
1000
Supply Current1: I
VCE=VDD,VFB=0V,Vpull=5V,Rpull=100
800
600
Ta=85oC
400
200
-40oC
0
23456
Supply V olt age: V
DD
(V)
25oC
Ω
(uA)
DD2
140
120
100
80
60
40
20
Supply Current2: I
0
23456
VOUT=18V
VIN=VDD=VCE,L=22uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
6V
Load current: I
VDD=3V,Vpull=5V,Rpull=100ohm
Ta=85oC
25oC
Chip Enable Voltage: V
VCE=VDD,VFB=VDD
Ta=85oC
25oC
Supply V olt age: V
OUT
DD
(mA)
-40oC
CE
-40oC
(V)
(V)
11/18
■
F
XC9119D10ASeries
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(8) Oscillation Frequency vs. Supply Voltage
VFB=0V,VCE=VDD,Rpull=100Ω,Vpull=5V
1.3
1.2
1.1
1
0.9
0.8
0.7
Osc illat ion F requency : Fos c(MHz)
0.6
23456
Supply V olt age: V
(10) Stan-by Current vs. Supply Voltage
)
uA
(
STB
1.0
0.8
0.6
VFB=0V,VCE=0V,Rpull=100Ω,Vpull=5V
0.4
-40oC,25oC
0.2
St andby Current: I
0.0
23456
Supply V olt age:
(12) Current Limit vs. Supply Voltage
900
800
700
(mA)
600
LIM
500
400
300
200
Current Limit: I
100
0
23456
VCE=3.0V,Rpull=10Ω,Tr:2SK583
Supply V olt age: V
12/18
Ta=85oC
25oC
-40oC
DD
VDD
DD
(V)
Ta=85oC
(V)
-40oC
25oC
Ta=85oC
(V)
(9) Maximum Duty Cycle vs. Supply Voltage
VFB=0V,VCE=VDD,Rpull=100Ω,Vpull=5V
98
96
-40oC
94
92
25oC
90
88
86
Maximum Duty Cycle: MAXDTY (%)
23456
Supply V olt age: V
(11) Lx ON Resistance vs. Supply Voltage
VCE=3.0V,VLx=0.4V,Rpull=10Ω,Tr:2SK583
6.0
)
Ω
(
5.0
SWON
4.0
-40oC
25oC
3.0
2.0
Lx ON Res i s tanc e: R
1.0
0.0
Ta=85oC
23456
Supply V olt age: V
(13) Feedback Voltage vs. Supply Voltage
1.02
1.01
1
0.99
Feedback Voltage: VFB(V)
0.98
23456
RFB1=300kohm,RFB2=75kohm,CFB=1000p
25oC
-40oC
Power Supply: VDD(V)
Ta=85oC
(V)
DD
(V)
DD
CIN=CL=4.7uF,L=22uH
Ta=85oC
■
m
m
m
m
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) CE ‘H’ Voltage vs. Supply Voltage (15) CE ‘L’ Voltage vs. Supply Voltage
0.65
0.60
(V)
0.55
CEH
0.50
0.45
0.40
0.35
0.30
CE ' H' V olt age: V
0.25
0.20
23456
VFB=0V,Vpull=5V,Rpull=100
-40oC
25oC
Supply V olt age: V
DD
Ta=85oC
(V)
Ω
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
CE ' L' V olt age: V CE L(V)
0.25
0.20
23456
VFB=0V,Vpull=5V,Rpull=100
-40oC
25oC
Ta=85oC
Supply V olt age: V DD(V)
(16) Load Transient Response
(V)
OUT
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
5.10
5.05
5.00
4.95
4.90
4.85
Output Voltage: V
100uA
4.80
VI N=VDD=VCE=3.6 V, L :CDRH4D18C
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Output Voltage
10mA
Load current
60
50
40
30
20
10
0
VI N=VDD=VCE=3.6 V, L :CDRH4D18C
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
CFB=620pF(Ceramic),RFB1=510kohm,RFB2=36koh
5.10
5.05
(V)
(mA)
OUT
OUT
5.00
4.95
4.90
Load current: I
4.85
Output Voltage: V
10mA
100uA
4.80
Time (0.2msec /div)
Time (1.0msec/div)
(V)
OUT
CFB=1000pF(Ceramic),RFB1=300kohm,RFB2=75koh
15.10
15.05
15.00
14.95
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
Output Voltage
60
50
40
30
CFB=1000pF(Ceramic),RFB1=300kohm,RFB2=75koh
15.10
15.05
(V)
(mA)
OUT
OUT
15.00
14.95
VIN=VDD=VCE,L=4.7uH(CDRH4D18C)
SD:XBS104S14R,CIN=CL=4.7uF(Ceramic)
14.90
14.85
Output Voltage: V
14.80
100uA
10mA
Load current
20
10
0
Load current: I
14.90
14.85
Output Voltage: V
14.80
10mA
100uA
Time (0.5msec/div)
Time (2.0msec/div)
XC9119D10A
Ω
Output Voltage
Load current
Output Voltage
Load current
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Series
(mA)
OUT
Load current: I
(mA)
OUT
Load current: I
13/18
■
XC9119D10ASeries
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(17) Maximum Output Current vs. Input Voltage
(mA)
160
140
OUT_M AX
120
100
Maximum Output Current:I
SD:XB01B04ABR,L=22uH(CDRH4D18C)
VCE=VDD,CIN=4.7uF(Ceram ic)CL=10uF(Ceramic)
CFB=620pF(Ceramic),RFB1=510kΩ,RFB2=36k
Ta=25oC
6V
80
60
40
20
0
123456
3.6V
VDD=2.5V
Input Voltage V IN(V)
Ω
VCE=VDD,CIN=4.7uF(Ceram ic)CL=10uF(Ceramic)
CFB=1000pF(Ceramic),RFB1=300kΩ,RFB2=75 k
(mA)
500
400
OUT_M AX
I
300
200
100
0
123456
Maximum Output Current:
VOUT=5VVOUT=15V
SD:X B01B 04ABR, L=4.7uH(CDRH4D18C)
Ta=25oC
6V
3.6V
VDD=2.5V
Input Voltage VIN(V)
Ω
14/18
■
PA CKAGING INFORMATION
●SOT-25
XC9119D10A
Series
●USP-6C
15/18
■
XC9119D10ASeries
PACKAGING INFORMATION (Continued)
●USP-6C Reference Pattern Layout
●USP-6C Reference Metal Mask Design
16/18
■
●SOT
●
MARKING RULE
-25
(TOP VIEW)
USP-6C
(TOP VIEW)
SOT-25
USP-6C
① represents product series
MARK PRODUCT SERIES
L
XC9119xxxxMx
② repres ents Lx overvoltage limit
MARK Lx OVERVOLTAGE LIMIT PRODUCT SERIES
D Not Available XC9119DxxxMx
③ represents oscillation frequency
MARK OSCILLATION FREQUENCY PRODUCT SERIES
A 1MHz XC9119xxxAMx
④ represents production lot number
0 to 9 and A to Z, or inverted characters 0 to 9 and A to Z repeated.
(G, I, J, O, Q, W excepted)
① represents product series
MARK PRODUCT SERIES
V XC9119xxxxDx
② repres ents Lx overvoltage limit
MARK Lx OVERVOLTAGE LIMIT PRODUCT SERIES
D Not Available XC9119DxxxDx
③④ represents FB voltage
MARK
③④
FB VOLTAGE (V) PRODUCT SERIES
1 0 1.0 XC9119x10xDx
⑤ represents oscillation frequency
MARK OSCILLATION FREQUENCY PRODUCT SERIES
A 1MHz XC9119xxxADx
⑥ represents production lot number
0 to 9 and A to Z repeated (G, I, J, O, Q, W excepted)
* No character inversion used.
XC9119D10A
Series
17/18
XC9119D10ASeries
1. The products and product specifications cont ained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
18/18
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