■
■
XC2408A816UR-G
ETR27006-001
1.6GHz ON/OFF Function LNA
GENERAL DESCRIPTION
The XC2408A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power
consumption using CMOS process, The XC2408 is designed for GPS band frequency (1.6GHz).
The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is
greatly reduced and there is no need to add external ON/OFF control function like LDO.
External R
voltages are 3.45V, 3.00V, 2.85V and 1.80V.
.
■APPLICATIONS
●GPS band RF signal amplified
■TYPICAL APPLICATION CIRCUIT
can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply
BIAS
■FEATURES
Noise Figure : NF=0.96dB (TYP.) (@ 1.575GHz)
Low Power Consumption
: 12.6mW (TYP.) (VDD=1.80V, R
High Gain : S21 =22.0dB (TYP.) (@ 1.575GHz)
CE Function : CE “H” 1.1V～V
(1.71V≦VDD≦3.15V)
DD
CE ”L” 0V～0.4V
Operation Voltage Range
: 1.71V～3.63V
Output : CMOS Output
50Ω Driver Built-in
Operating Temperature Range
: - 40℃～+ 85℃
Package : USP-8A01
Environmentally Friendly
: EU RoHS Compliant, Pb Free
TYPICAL PERFORMANCE
CHARACTERISTICS
Power Gain / Noise Figure vs. Frequency
BIAS
=92Ω)
VDD [V] (TYP.) R
3.45 360
3.00 270
2.85 240
1.80 92
* R
should be used in ±1% tolerance and ±200ppm/℃ temperature stability.
BIAS
TOP VIEW
[Ω]
BIAS
XC2408A816
35
30
25
20
Power Ga in : S21 (dB)
15
10
1 1.11.21.31.41.51.61.71.81.9 2
Frequency : f (GHz)
VDD=VCE=2.85V, Ta=25℃
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
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Noise Figure : NF (dB)
XC2408A816UR-G
■BLOCK DIAGRAM
* Diodes inside the circuit are an ESD protection diode.
■PRODUCT CLASSIFICATION
●Ordering Information
PRODUCT NAME PACKAGE ORDER UNIT
XC2408A816UR-G
(*1)
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
(*1)
USP-8A01 3,000 / Reel
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XC2408A816UR-G
■PIN CONFIGURATION
USP-8A01
(BOTTOM VIEW）
■PIN ASSIGNMENT
PIN NUMBER PIN NAME FUNCTION
1 RF_IN RF Signal Input
2 V
3 V
Ground
SS1
Ground
SS2
4 CE ON/OFF Control Pin
5 RF_OUT RF Signal Output
6 VDD Power Supply
7 R
8 R
1 R
BIAS
2 R
BIAS
Connect Pin
BIAS
Connect Pin
BIAS
■FUNCTION CHART
PIN NAME SIGNAL STATUS
CE High Active
CE
CE Low Stand-by
CE OPEN Undefined State
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XC2408A816UR-G
■ABSOLUTE MAXIMUM RATINGS
PAR AMETER SYMBOL RATINGS UNITS
Power Supply Voltage VDD
CE Input Voltage VCE
Current Circuit IDD 42 mA
R
Input Voltage R
BIAS1
R
Input Voltage R
BIAS2
RF Input Power PIN 10 dBm
RF_IN Input Voltege V
RF_OUT Input Voltege V
Power Dissipation Pd 120 mW
Operating Ambient Temperature Topr
Storage Temperature Tstg
* All voltages are described based on the V
V
pin and V
SS1
(*1)
The maximum value should be either VDD+0.3V or +4.0V in the lowest.
(*2)
The maximum value should be either R
pin should be connected each other outside.
SS2
and V
SS1
BIAS2
SS2
+0.3V or +1.6V in the lowest.
BIAS1
BIAS2
RF_IN
RF_OUT
pin.
-0.3〜V
-0.3〜V
-0.3〜R
-0.3〜R
Ta =2 5℃
-0.3〜4.0
+0.3 or 4.0
DD
+0.3 or 4.0
DD
(*1)
(*1)
-0.3〜+1.6
+0.3 or +1.6
BIAS2
+0.3 or +1.6
BIAS2
(*2)
(*2)
-40〜+85 ℃
-55〜+125 ℃
V
V
V
V
V
V
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XC2408A816UR-G
■ELECTRICAL CHARACTERISTICS
●DC Characteristics Ta=25℃
PAR AMETER SYMBOL CONDITIONS
R
BIAS
R
Power Supply Voltage
Current Circuit
Stand-by Current
VDD
I
DD
I
STBY
BIAS
R
BIAS
R
BIAS
1.71V≦V
V
1.71V≦V
CE=VDD
V
=360Ω
=270Ω
=240Ω
=92Ω
≦3.63V
DD
≦3.63V
DD
=0V
CE
(*2)
3.278 3.450 3.630 V ①
(*2)
2.850 3.000 3.150 V ①
(*2)
2.708 2.850 2.992 V ①
(*2)
1.710 1.800 1.890 V ①
(*1)
(*1)
MIN. TYP. MAX.
- 7.0 9.6 mA ①
- - 0.1 μA ①
1.71V≦VDD≦3.15V 1.1 - V
CE "H" Level Voltage
CE "L" Level Voltage
(*1)
For the relation of VDD and R
(*2)
R
should be used in ±1% tolerance and ±200ppm/℃ temperature stability.
BIAS
●AC Characteristics V
V
CEH
3.15V<V
- 0 - 0.4 V ①
V
CEL
, Please refer to the “Power Supply Voltage vs. R
BIAS
≦3.63V 1.3 - V
DD
Table” below.
BIAS
DD=VCE
=2.85V, R
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT
Power Gain S21 f=1.575GHz 16.0 22.0 - dB
Input Return Loss S11 f=1.575GHz - 7.0 - dB
Output Return Loss S22 f=1.575GHz - 17.0 - dB
Isolation S12 f=1.575GHz - -33.0 - dB
Noise Figure
(*1)
NF f=1.575GHz - 0.96 - dB
Input Power IP3 IIP3 f=1.575GHz, 1.576GHz - -15.5 - dBm
Input Power IP2 IIP2 f=0.8GHz, 2.345GHz - 13.2 - dBm
Input Power @ 1dB
Gain Conpression
(*1)
NF is the value excluding the substrate loss.
Power Supply Voltage vs. R
V
[V] R
DD
3.278～3.630
2.850～3.150
2.708～2.992
1.710～1.890
P1dB f=1.575GHz - -24.0 - dBm
BIAS
[Ω]
BIAS
360
270
240
92
UNITS CIRCUIT
V ①
DD
V ①
DD
=240Ω, Ta=25℃
BIAS
②
②
②
②
③
④
④
②
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XC2408A816UR-G
■NOTE ON USE
1.
For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded.
2. Please eliminate static electricity from the operational table, people, and soldering iron.
3. Please use noiseless power supply for stable operation.
4. Please connect C
5. V
6. Please ensure to use an external component which does not depend on bias or temperature too much.
7. Torex places an importance on improving our products and their reliability.
pin and V
SS1
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
to R
BIAS
pin should be connected each other outside.
SS2
pin as close as possible.
BIAS2
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