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XC2404A816UR-G
ETR0702-005a
1.6GHz Low Noise Amplifier
GENERAL DESCRIPTION
XC2404 series is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure, low power consumption. The
device offers easy output matching to 50Ω for input and output with less external components.
The device operates at 1.2V. For higher power supplies such as 1.8V and 2.85V, the device can operate with a self bias of
one adding resister.
■APPLICATIONS
●GPS band RF signal amplified
.
TYPICAL APPLICATION CIRCUIT
Figure 1: Fixed Bias
FEATURES
Noise Figure ：NF=0.94dB(TYP.) @ 1.575GHz
Low Power Consumption ：
High Gain ：|S21|=26.5dB(TYP.) @ 1.575GHz
Operation Voltage Range
Output ：CMOS Output, 50Ωdriver built-in
Operating Temperature Range
Ultra Small Package ：USP-8A01
Environmentally Friendly ：EU RoHS Compliant, Pb Free
：1.14V〜1.26V @ Fixed bias
12.0mW(TYP.) @ VDD=1.2V, Fixed bias
：-40℃〜+85℃
TYPICAL PERFORMANCE
CHARACTERISTICS
Figure 2: Self Bias
VIN [V] R
3.00 270
2.85 240
1.80 82
R
should be in ±1% tolerance and ±200ppm/℃ temperature stability.
*
BIAS
is 10nF.
C
BIAS
BIAS
[Ω]
XC2404A816
40
35
S21
30
25
20
15
10
Po we r Gain : S 21 (dB)
5
0
1.375 1.475 1.575 1.675 1.775
Frequency (GHz)
VDD=1.2V Ta=25℃
4
3.5
3
2.5
2
1.5
1
0.5
0
Noise Figure : NF (dB)
1/16
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XC2404A816UR-G
PIN CONFIGURATION
7
6
5
USP-8A01
V
DD1
8
1
RF_IN
2
V
SS1
3
V
4
V
SS3
SS2
PIN ASSIGNMENT
PIN NUMBER
USP-8A01
PIN NAME FUNCTION
V
DD2
V
DD3
RF_OUT
（BOTTOM VIEW）
1 RF_IN RF Signal Input
2 V
3 V
4 V
Ground
SS1
Ground
SS2
Ground
SS3
5 RF_OUT RF Signal Output
6 V
7 V
8 V
PRODUCT CLASSIFICATION
●Ordering Information
XC2404A816①②‑③
(*1)
Power Supply
DD3
Power Supply
DD2
Power Supply
DD1
DESIGNATOR DESCRIPTION SYMBOL DESCRIPTON
①②-③
(*1)
The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
Packages
Taping Type
UR-G USP-8A01
2/16
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A
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BLOCK DIAGRAMS
BSOLUTE MAXIMUM RATINGS
RF_IN
PAR AMETER SYMBOL RATINGS UNITS
Supply Voltage VDD 1.60 V
Current Circuit IDD 42 mA
RF Input Power PIN 10 dBm
Power Dissipation Pd 120 mW
Operating Temperature Range Ta
Storage Temperature Range Tstg
V
DD1
V
DD2
V
DD3
RF_ OUT
VSS3VSS2VSS1
Ta =2 5℃
-40〜+85
-55〜+125
o
C
o
C
3/16
XC2404A816UR-G
■
XC2404A816UR-G
ELECTRICAL CHARACTERISTICS
●DC Characteristics
Fixed Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 1)
PAR AMETER SYMBOL CONDITIONS MIN. TYP. MAX.
Power Supply Pin Voltage V
Current Circuit IDD V
Self Bias (refer to TYPICAL APPLICATION CIRCUIT, Figure 2)
- 1.14 1.20 1.26 V ①
DD
=1.2V 4.00 10.0 18 mA ①
DD
Ta =2 5℃
UNITS CIRCUITS
Ta =2 5℃
PAR AMETER SYMBOL CONDITIONS MIN. TYP. MAX.
Input Power Supply Voltage 1 V
Input Power Supply Voltage 2 V
Input Power Supply Voltage 3 V
IN1
IN2
IN3
Power Supply Pin Voltage VDD V
Current Circuit IDD V
* When the device is used in self bias, please use the specified R
R
=270Ω±1％,
BIAS
±200ppm/℃
R
=240Ω±1％,
BIAS
±200ppm/℃
R
=82Ω±1％,
BIAS
±200ppm/℃
= V
= V
IN1
IN1
, V
, V
BIAS
IN
IN
, V
IN2
, V
IN2
and C
UNITS CIRCUITS
2.850 3.000 3.150 V ①
2.708 2.850 2.992 V ①
1.710 1.800 1.890 V ①
0.90 1.12 1.32 V ①
IN3
5.25 7.25 11.0 mA ①
IN3
.
BIAS
4/16
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A
ELECTRICAL CHARACTERISTICS (Continued)
C Characteristics
PAR AMETER SYMBOL
CONDITIONS MIN. TYP. MAX. UNITS CIRCUITS
Power Gain S21 f=1.575GHz 24 26.5 - dB ②
XC2404A816UR-G
V
=1.2V, Ta=25℃
DD
Input Return Loss S11 f=1.575GHz - 10 -
Output Return Loss S22 f=1.575GHz - 17 -
Isolation S12 f=1.575GHz - -36 -
Noise Figure
Input Power IP3 I
Input Power @ 1dB
Gain Compression
*1: NF is the value excluding the substrate loss.
Note
1. This series is structurally weak in electrostatic discharge.
Please eliminate static electricity from the operational table, people, and soldering iron.
2. Please use noiseless power supply for stable operation.
3. Please use ±1% Rbias with ±200ppm/℃ temperature stability and 10nF Cbias.
4. Please connect Cbias to V
5. Please refer to the pattern layout. V
V
） should be connected as well.
SS3
6. Please ensure to use an external component which does not depend on bias or temperature too much.
(*1)
NF f=1.575GHz - 0.9４ - dB ③
f=1.575GHz, 1.576GHz - -14.5 - dBm ④
IP3
P1dB f=1.575GHz - -25.5 - dBm ②
pin as close as possible.
DD
pins （V
DD
DD1
, V
DD2
, V
） should be connected each other outside. Also, VSS pins （V
DD3
dB
dB
dB
②
②
②
SS1
, V
SS2
,
5/16
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