A
y
r
p
XBS053V13R-G
Schottky Barrier Diode, 500mA, 30V Type
■FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage : V
Environmentally Friendly : EU RoHS Compliant, Pb Free
■
Ta=25℃
BSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Voltage VRM 30 V
Reverse Voltage (DC) VR 20 V
Forward Current (Average) IF(AV) 500 mA
Non Continuous
Forward Surge Current
Junction Temperature Tj 125
Storage Temperature Range Tstg
*1：Non continuous high amplitude 60Hz half-sine wave.
■MARKING RULE
: VF=0.40V (TYP.)
: I
*1
=500mA
F(AV)
=30V
RM
FSM 5 A
I
℃
-55～+150 ℃
ETR1606-003
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■PACKAGING INFORMATION
Cathode Bar
①: 0 (Product Number)
②
①
■PRODUCT NAME
PRODUCT NAME DEVICE ORIENTATION
XBS053V13R
XBS053V13R-G SOD-323A(Halogen & Antimony free)
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
Ta=25℃
PARAMETER SYMBOL TEST CONDITIONS
Forward Voltage
Reverse Current IR VR=20V - - 100
Inter-Terminal Capacity Ct VR=10V , f=1MHz - 12 - pF
Reverse Recovery Time*2 trr IF=IR=10mA , irr=1mA - 8 - ns
*2：trr measurement circuit
SOD-323A
②: Assembl
VF1 IF=100mA - 0.28 - V
V
F2 I
Lot Numbe
Unit : mm
SOD-323A
LIMITS
MIN. TYP. MAX.
=500mA - 0.40 0.47 V
F
Device Under TestBias
UNIT
μA
Oscillosco
ePulse Generatrix
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XBS053V13R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
1
100
Ta=125℃
10
(A)
F
0.1
Ta=125℃
-25℃
(mA)
R
1
25℃75℃
0.1
0.01
Forward Current: IF (A)
Forward Current I
0.001
0 0.2 0.4 0.6
Forward Voltage: VF (V) Reverse Voltage: VR (V)
Forward Voltage V
F
(V)
Reverse Current I
0.01
Reverse Current: IR (ｍA)
0.001
0102030
Reverse Voltage V
R
(V)
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.6
100
10
(V)
F
0.4
IF=0.5A
(mA)
R
1
75℃
25℃
VR=20V
10V
5V
0.2
Forward Voltage V
Forward Voltage: VF (V)
0.0
-50 0 50 100 150
Operating Temperature: Ta (℃) Operating Temperature: Ta (℃)
Operating Temperature Ta (℃)
0.1A
0.01A
0.1
Reverse Current I
0.01
Reverse Current: IR (ｍA)
0.001
0 50 100 150
Operating Temperature Ta (℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage (6) Average Forward Current vs. Operating Temperature
1.0
(A)
AV
0.8
0.5
0.3
Average Forward Current IF
Average Forward Current: IFAV (A)
0.0
0 50 100 150
Operating Temperature Ta (℃)
Inter-Terminal Capacity Ct (pF)
Inter-Terminal Capacity: Ct (pF)
100
75
50
25
Ta=25℃
0
0102030
Reverse Voltage: VR (V) Operating Temperature: Ta (℃)
Reverse Voltage V
R
(V)
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XBS053V13R-G
1. The products and product specifications contained he rein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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