TOMSON TYN1012 Service Manual
TXN/TYN 0512 --->
TXN/T YN 101 2
April 1995
SCR
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(180° conduction angle)
TXN
TYN
Tc=80°C
Tc=90°C
12 A
I
T(AV)
Average on-state current
(180° conduction angle,single phase circuit)
TXN
TYN
Tc=80°C
Tc=90°C
8A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp=8.3 ms 125 A
tp=10 ms 120
I2tI
2
t value tp=10 ms 72 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs
100 A/µs
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
K
A
G
.HIGHSURGECAPABILITY
.HIGHON-STATE CURRENT
.HIGHSTABILITYAND RELIABILITY
.TXNSerie:
INSULATEDVOLTAGE=2500V
(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter TYN/TXN Unit
0512 112 212 412 612 812 1012
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
50 100 200 400 600 800 1000 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high performance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATECHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case forDC TXN 3.5 °C/W
TYN 2.5
Symbol Test Conditions Value Unit
I
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 15 mA
V
GT
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj= 125°C MIN 0.2 V
tgt VD=V
DRMIG
= 40mA
dIG/dt = 0.5A/µs
Tj=25°C TYP 2 µs
I
L
IG= 1.2 I
GT
Tj=25°C TYP 50 mA
I
H
IT= 100mA gate open Tj=25°C MAX 30 mA
V
TM
ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj= 125°C3
dV/dt Linear slope up to VD=67%V
DRM
gate open
Tj= 125°C MIN 200 V/µs
tq VD=67%V
DRMITM
= 24A VR= 25V
dITM/dt=30 A/µsdV
D
/dt= 50V/µs
Tj= 125°C TYP 70 µs
P
G (AV)
=1W PGM= 10W (tp = 20 µs) I
FGM
= 4A (tp = 20 µs) V
RGM
=5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/T Y N 0512 ---> TXN/ TYN 1 012
2/5
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