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DSS
GSS
ARF1500
BeO 1525-xx
D
SS
ARF1500
RF POWER MOSFET
N-CH AN NEL ENHANCEMENT MODE 125V 750W 40MHz
The ARF1500 is an RF power transistor designed for very high power scientifi c, commercial, medical and industrial
RF power generator and amplifi er applications up to 40 MHz.
• Specifi ed 125 Volt, 27.12 MHz Characteristics:
• Output Power = 750 Watts.
• Gain = 17dB (Class C)
• Effi ciency > 75%
• RoHS Compliant
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
SSG
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
Symbol
V
DSS
I
V
P
TJ,T
T
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Gate-Source Voltage
GS
Total Device Dissipation @ T
D
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
V
DS
I
DSS
I
GSS
g
V
isolation
V
GS
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Voltage
(ON)
1
(I
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
fs
RMS Voltage
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
(TH)
(60Hz Sinewave from terminals to mounting surface for 1 minute)
THERMAL CHARACTERISTICS
Symbol
R
R
Characteristic (per package unless otherwise noted)
Junction to Case
θJC
θJHS
Junction to Sink
(Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
= 25°C
C
= 25°C
C
= 0V, ID = 250μA)
GS
= 30A, VGS = 10V)
(ON)
D
= 500V, VGS = 0V)
DS
= 400V, VGS = 0V, TC = 125°C)
DS
= ±30V, V
GS
= 25V, ID = 30A)
DS
DS
= 0V)
ARF1500
500
60
±30
1500
-55 to 175
300
MIN TYP MAX
500
6 7.5
100
1000
±400
6 7.5
TBD
3 5
MIN TYP MAX
0.10
0.16
UNIT
Volts
Amps
Volts
Watts
°C
UNIT
Volts
μA
nA
mhos
Volts
Volts
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-5965 Rev E 10-2008
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DYNAMIC CHARACTERISTICS
ARF1500
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
= 0V
GS
V
= 150V
DS
f = 1 MHz
= 15V
V
GS
= 250
V
DD
= 60A @ 25°C
I
D
= 1.6Ω
R
G
FUNCTIONAL CHARACTERISTICS
Symbol
G
η
Ψ
1
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Characteristic
Common Source Amplifi er Power Gain
PS
Drain Effi ciency
Electrical Ruggedness VSWR 10:1
Test Conditions
f = 27.12 MHz
= 0V VDD = 125V
V
GS
P
= 750W
out
MIN TYP MAX
UNIT
5150 6030
500 650
pF
215 225
7.5
6.0
ns
20
10
MIN TYP MAX
17 19
70 75
No Degradation in Output Power
UNIT
dB
%
60
VDS> ID(ON) x R
50
40
30
20
, DRAIN CURRENT (AMPERES)
10
D
I
050-5965 Rev E 10-2008
TJ = +125°C
0
0 2 4 6 8 10 12 14
V
GS
Figure 2, Typical Transfer Characteristics
Per transistor section unless otherwise specifi ed.
20,000
10,000
5000
1000
CAPACITANCE (pf)
500
100
.1 1 10 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
MAX.
DS
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
(ON)
TJ = -55°C
TJ = +25°C
C
iss
C
oss
C
rss
240
DATA FOR BOTH SIDES
IN PARALLEL
100
, DRAIN CURRENT (AMPERES)
D
I
1 5 10 50 100 500
OPERATION HERE
LIMITED BY RDS (ON)
50
10
5
TC =+25°C
TJ =+200°C
1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Maximum Safe Operating Area
SINGLE PULSE
100us
1ms
10ms
100ms
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Table 1 - Typical Class AB Large Signal Impedance -- ARF1500
F (MHz)
Zin (Ω)Z
OL
(Ω)
2.0
13.5
27
40
6.7-j 12
0.45 -j 2.5
0.22 -j 0.67
0.2 + j .19
7.5 -j 0.8
7.1 -j 1.7
6.1 -j 3.0
5.0 -j 3.6
Zin - Gate shunted with 25Ω I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 750 Watts
output at Vdd = 125V
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide,
BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling
and mounting to avoid damage to this area .
These devices must never be thrown away
with general industrial or domestic waste.
Clamp
Heat Sink
D SS
G
SS
D
G
SS
SS
ARF15--
BeO
1525-xx
.005
.045
.250
.500
.500
1.065
.207 .207.375
.105 typ.
1.065
D
S
G
1.15
0
0.02
0.04
0.06
0.08
0.10
0.12
10
-5
10
-4
10
-3
10
-2
10 1.0
-1
6
ARF1500
1.10
1.05
1.00
0.95
0.90
(NORMALIZED)
, THRESHOLD VOLTAGE
0.85
GS(th)
V
0.80
0.75
-50 -25 0 25 50 75 100 125 150
Figure 4, Typical Threshold Voltage vs Temperature
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
RECTANGULAR PULSE DURATION (SECONDS)
TC, CASE TEMPERATURE (°C)
D = 0.9
0.7
0.5
0.3
0.1
0.05
Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
SINGLE PULSE
5
4
3
2
, DRAIN CURRENT (AMPERES)
1
D
I
0
0 5 10 15
V
DS
Figure 5, Typical Output Characteristics
10.2V
8.2V
6.2V
4.2V
2.2V
2V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Note:
t
1
DM
P
Peak TJ = PDM x Z
t
2
Duty Factor D =
t
1
t
/
2
θJC + TC
Thermal Considerations and Package Mounting:
The rated 1500W power dissipation is only available
when the package mounting surface is at 25°C and the
junction temperature is 175°C. The thermal resistance between junctions and case mounting surface
is 0.10°C/W. When installed, an additional thermal
impedance of 0.06°C/W between the package base and
the mounting surface is smooth and fl at. Thermal joint
compound must be used to reduce the effects of small
surface irregularities. The heatsink should incorporate a
copper heat spreader to obtain best results.
The package is designed to be clamped to a heatsink. A
clamped joint maintains the required mounting pressure
while allowing for thermal expansion of both the device
and the heat sink. A simple clamp, and two 6-32 (M3.5)
screws can provide the minimum 125 lb. required
mounting force. T=4-6 in-lb. Please refer to App Note
1802 "Mounting Instructions for Flangeless Packages."
050-5965 Rev E 10-2008
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RF
Input
L4
L1
Output
C7
C8
C9
C10
L5
C4
C5
C1,C11 ARCO 465 50-450pF mica trimmer
C2 1500pF ATC 700B
C3 2x 3300 pF ATC 700B
C4 8200pF 500V NPO ceramic
C5 150pF 500V NPO
C7-C8 .1uF 250V ceramic chip
C9- C10 1000pF Z5U 500V
L1 120 nH 5t #20 .25"d .3"l
L2 20 nH #20 hairpin loop .3" x .125"
L3 175 nH - 4t #10 .625" dia .875" l
L4 2uH - 22t #24 enam. .312" dia.
L5 500nH 2t on 850u .5" bead
R1 51 Ω .5W
TL1 .25" x 1.75" (30 Ω) Stripline
ARF1500
27.12 MHz Test Circuit
C11
125V
+
-
C1 C2 C3
R1
L2
L3
TL1
27 MHz Test Amp
ARF1500
RF 3-02
ARF1500
BeO 135-05
J1 J2
27 MHz Test Amp
ARF1500
RF 3-02
Parts placement
1:1 pcb artwork
050-5965 Rev E 10-2008
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