Tiptek BSS123 Schematics

BSS123

STD-2008-Z2

PAGE.1

RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.

DRAIN-SOURCE VOLTAGE

V

DSS

100

V

GATE-SOURCE VOLTAGE

V

GSS

20

V

MAXIMUM POWER DISSIPATION DERATING @ TA = 25°C

PD

225

mW

ERATURE

RANGE

N-CHANNEL POWER MOSFET

FEATURES

MECHANICAL DATA

 ADVANCED TRENCH PROCESS TECHNOLOGY
 HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE
 FULLY CHARACTERIZED AVALANCHE VOLTAGE AN D

CURRENT

 IMPROVED SHOOT-THROUGH FOM
 BOTH NORMAL AND PB FREE PRODUCT

ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB
PB FREE: 99% SN ABOVE

 WE DECLARE THAT THE MATERIAL OF PRODUCT

COMPLIANCE WITH ROHS REUIREMENTS.



Pb Free: BSS123

Halogen Free: BSS123-H

CASE：SOT-23
DIMENSIONS IN MILLIMETERS AND (INCHES)

ABSOLUTE MAXIM UM RATINGS

PATING SYMBOL BSS123 UNITS

MAXIMUM DRAIN CURRENT-CONTINUE ID 170 mA

OPERATING AND STORAGE JUNCTION TEMP

THERMAL RESISTANCE, JUNCTION−TO−AMBIENT (NOTE1)

NOTE:1. 1-in

2

2oz Cu PCB board

TJ;T

R

- 55 TO +150

STG

θJA

±

556

℃

℃/W

BSS123

STD-2008-Z2

PAGE.2

ELECTRICAL CHARACTE RISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)

OFF CHARACTERISTICS

Gate-Body Leakage Current (VDS=0, VGS =20V)

I

GSS

−

−

50

nA

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL MIN TYP MAX UITS

Drain-Source Breakdown
Voltage

Zero Gate Voltage Dr ain Current

GS =0V, ID =250µA V

V

DS =100V, VGS =0V, TJ =25°C

V
VDS =100V, VGS =0V, TJ =125°C 60

100 − − V

(BR)DSS

I

− −

DSS

15

ON CHARACTERISTICS (NOTE 1)
Gate Threshold Voltage(VDS = VGS, ID =1.0mA) VGS(th) 0.8 − 2.8 V
Static Drain-Source On-

Resistance
Transfer Admittance (V

=25V, I

DS

VGS=10V, ID=100mA r

=100 mA) ∣gfs∣

D

DS(ON)

− 5.0 6.0

80 − −

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance C

V

=25V, VGS=0V, f=1.0MHz

DS

Transfer Capacitance C

− 20 − pF

C

ISS

− 9.0 − pF

oss

− 4.0 − pF

RSS

SWITCHING CHARACTERISTICS (NOTE 2)

Turn-On Time
Turn-Off Time T

V

cc=30V,IC=0.28A,VGS=10V,

R

GS=50Ω

− 20 − ns

T

ON

− 40 − ns

OFF

REVERSE DIODE

Forward Voltage (ID=0.34A , VGS=0V) VSD − − 1.3 V

NOTE: 1. Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%.

µA

Ω

mmhos