THAT Corporation THAT140 Datasheet
THAT
Corporation
Quad Low-Noise
NPN / PNP Transistor Array
THAT140
FEATURES
Two Matched NPN Transistors
·
Two Matched PNP Transistors
Monolithic Construction
·
Low Noise
·
nV
/
Hz
Hz
(NPN)
(PNP)
— 0.75
nV
—0.8
High Speed
·
—f
—f
Excellent Matching - 500 mVtyp
·
Dielectrically Isolated
·
25VV
·
/
= 350 MHz (NPN)
t
= 325 MHz (PNP)
t
CEO
DESCRIPTION
THAT140 is a quad, large-geometry monolithic
NPN/PNP transistor array which combines low noise,
high speed and excellent parametric matching. The
large geometries typically result in 25 W base spread-
ing resistance for the PNP devices (30 W for the
NPNs), producing 0.75
nV Hz
ideal choice for low-noise amplifier input stages.
trically Isolated process, all four transistors are elec
trically isolated from each other by a layer of oxide.
for the NPNs). This makes these parts an
Fabricated on a Complementary Bipolar Dielec
nV Hz
voltage noise (0.8
APPLICATIONS
Microphone Preamplifiers
·
Tape Head Preamplifiers
·
Current Sources
·
Current Mirrors
·
Log/Antilog Amplifiers
·
Multipliers
·
The resulting low collector-to-substrate capacitance
produces a typical NPN f
the PNPs. This delivers AC performance similar to
discrete 2N3904- and 2N3906-class devices.
Dielectric isolation also minimizes crosstalk and
provides complete DC isolation.
Substrate biasing is not required for normal oper
ation, though the substrate should be grounded to
-
-
optimize speed. The monolithic construction assures
excellent parameter matching and tracking over tem
perature.
of 350 MHz, 325 Mhz for
t
-
-
14
13
12
11
10
9
8
NC
Q2
Q1
1
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
2
3
Figure 1. Pin Configuration
Q3
4
Q4
SUB
5
6
7
Rev. 11/29/00 Page 2
SPECIFICATIONS
1
Maximum Ratings (TA=25° C)
Parameter Symbol Conditions Min Typ Max Units
NPN Collector-Emitter Voltage BV
NPN Collector-Base Voltage BV
NPN Emitter-Base Voltage BV
NPN Collector Current I
NPN Emitter Current I
PNP Collector-Emitter Voltage BV
PNP Collector-Base Voltage BV
PNP Emitter-Base Voltage BV
PNP Collector Current I
PNP Emitter Current I
Collector-Collector Voltage BV
Emitter-Emitter Voltage BV
CEO
CBO
EBO
C
E
CEO
CBO
EBO
C
E
CC
EE
IC= 1 mAdc, IB= 0 25 35 ¾ V
IC=10mAdc, IE= 0 25 35 ¾ V
IE=10mAdc, IC=0 5 ¾¾ V
10 20 mA
10 20 mA
IC= 1 mAdc, IB= 0 -25 -40 ¾ V
IC=10mAdc, IE= 0 -25 -40 ¾ V
IE=10mAdc, IC=0 -5 ¾¾ V
-10 -20 mA
-10 -20 mA
±100 ±200 ¾ V
±100 ±200 ¾ V
Operating Temperature Range T
Maximum Junction Temperature T
Storage Temperature T
0.750±0.004
(19.05±0.10)
1
0.060
(1.52)
Typ.
0.10 Typ.
(2.54)
0.075
(1.91)
0.125±0.004
(3.18±0.10)
0.018
(0.46)
STORE
0.25±.004
(6.35±0.10)
A
JMAX
0.32 Max.
(8.13)
0.010
(0.25)
1
070°C
150 °C
-45 125 °C
0.050
(1.27)
Typ
0.245
0.157
Max
(6.2)
Max
(3.99)
0.018 (0.46)
Max
0.344 (8.74)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
Figure 2. Dual-In-Line Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Figure 3. Surface Mount Package Outline
Loading...