THAT Corporation THAT120 Datasheet

THAT

Corporation

Quad Low-Noise

PNP Transistor Array

THAT120

FEATURES

Four Matched PNP Transistors

·

Low noise — 0.75

·

High Speed — 325 MHz f

·

Excellent Matching - 500 mV (typ)

·

Dielectrically Isolated

·

-25VV

·

CEO

nV

Hz

t

DESCRIPTION

THAT120 is a quad, large-geometry monolithic

PNP transistor array which combines low noise, high

speed and excellent parametric matching. The large

geometry typically results in 25 W base spreading re-

sistance, producing 0.75

makes these parts an excellent choice for low-noise

amplifier input stages.

Fabricated on a Complementary Bipolar Dielec-

trically Isolated process, all four transistors are elec-

trically isolated from each other by a layer of oxide.

voltage noise. This

nV Hz

APPLICATIONS

Microphone Preamplifiers

·

Tape Head Preamplifiers

·

Current Sources

·

Current Mirrors

·

Log/Antilog Amplifiers

·

Multipliers

·

The resulting low collector-to-substrate capacitance

produces a typical f

mance similar to 2N3906-class devices. The dielec-

tric isolation also minimizes crosstalk and provides

complete DC isolation.

Substrate biasing is not required for normal oper-

ation, though the substrate should be grounded to

optimize speed. The one-chip construction assures

excellent parameter matching and tracking over tem-

perature.

of 325 MHz, for AC perfor-

t

8

Q4

9

10

11

Q2

12

13

SUB

14

Figure 1. Pin

Configuration

Q3

Q1

0.750±0.004

7

6

5

4

3

2

NC

1

THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA

Tel: [phone]; Fax: [phone]; Web: www.thatcorp.com

(19.05±0.10)

0.25±.004

1

0.060
(1.52)

Typ.

0.10 Typ.
(2.54)

0.075
(1.91)

Figure 2. Dual-In-Line Package Outline

(6.35±0.10)

0.125±0.004
(3.18±0.10)

0.018
(0.46)

0.32 Max.
(8.13)

0.010

(0.25)

1

Figure 3. Surface Mount Package Outline

0.050
(1.27)

Typ

0.018 (0.46)
Max

0.344 (8.74)
Max

0.157
(3.99)

Max

0.245

0.069
(1.75)

Max

(6.2)
Max

0.010
(0.25)

Max

Rev. 11/27/00

SPECIFICATIONS

1

Maximum Ratings (TA=25° C)

Parameter Symbol Conditions Min Typ Max Units

Collector-Emitter Voltage BV

Collector-Base Voltage BV

Emitter-Base Voltage BV

Collector-Collector Voltage BV

Emitter-Emitter Voltage BV

Collector Current I

Emitter Current I

Operating Temperature Range T

Maximum Junction Temperature T

Storage Temperature T

STORE

CEO

CBO

EBO

CC

EE

C

E

A

JMAX

IC= 1 mAdc, IB= 0 -25 -40 ¾ V

IC=10mAdc, IE= 0 -25 40 ¾ V

IE=10mAdc, IC=0 -5 ¾¾ V

±100 ±200 ¾ V

±100 ±200 ¾ V

-10 -20 mA

-10 -20 mA

070°C

150 °C

-45 125 °C

Electrical Characteristics

2

Parameter Symbol Conditions Min Typ Max Units

Current Gain h

fe

VCB=10V

=1mA 50 75 ¾

I

C

IC=10mA5075¾

Current Gain Matching Dh

Noise Voltage Density e

Gain-Bandwidth Product f

DV

BE(VBE1-VBE2;VBE3-VBE4

)V

fe

N

t

OS

VCB=10V,IC=1mA — 5 — %

VCB=10V,IC= 1 mA, 1 kHz — 0.75 —

IC= 1 mA, VCB= 10 V 325 MHz

IC=1mA — ±0.5 ±3mV

nV / Hz

IC=10mA—±0.5 ±3mV

DI

B(IB1-IB2;IB3-IB4

)IOSIC=1mA — ±700 ±1800 nA

IC=10mA—±7 ±18 nA

Collector-Base Leakage Current I

Bulk Resistance r

Base Spreading Resistance r

Collector Saturation Voltage V

CE(SAT)

Output Capacitance C

CBO

BE

bb

OB

VCB=0V,10mA<IC< 10mA — 2 — W

VCB=10V,IE= 0 mA, 100 kHz 3 pF

VCB=25V — -25 — pA

VCB=10V,IC=1mA —25— W

IC= 1 mA, IB= 100 mA — -0.05 V

Collector-Collector Capacitance

Q

1/Q2;Q3/Q4

C

CC

VCC= 0 V, 100 kHz 0.6 pF

1. All specifications subject to change without notice.

2. Unless otherwise noted, T

=25°C.

A

THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA

Tel: [phone]; Fax: [phone]; Web: www.thatcorp.com