Texas Instruments Incorporated AN-1986 User's Guide

VIN (V)
EFFICIENCY (%)
10 15 20 25 30
100
95
90
85
80

1 Introduction

This evaluation board showcases the LM3429 NFET controller used with a boost current regulator. It is designed to drive 9 to 12 LEDs at a maximum average LED current of 1A from a DC input voltage of 10 to 26V.
The evaluation board showcases most features of the LM3429 including PWM dimming, overvoltage protection and input under-voltage lockout. It also has a right angle connector (J7) which can mate with an external LED load board allowing for the LEDs to be mounted close to the driver. Alternatively, the LED+ and LED- banana jacks can be used to connect the LED load.
The boost circuit can be easily redesigned for different specifications by changing only a few components (see Alternate Designs ). Note that design modifications can change the system efficiency for better or worse. See the LM3429 LM3429Q1 N-Channel Controller for Constant Current LED Drivers (SNVS616) data sheet for a comprehensive explanation of the device and application information.
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Figure 1. Efficiency with 9 Series LEDS AT 1A
1
Copyright © 2009–2013, Texas Instruments Incorporated
D1
OVP
LM3429
nDIM
PGND
NC
DAP
GATE
COMP
CSH
RCT
IS
HSN
HSP
L1
C9
R6
Q1
R1
C7
R13
R5
1
2
3
4
5
6
7
14
13
12
11
10
9
8
R7
R8
AGND
R10
Q3
R4
PWM
R18
R11
R9
R20
C12
V
IN
V
CC
V
IN
GND
V
IN
C8
R2
R3
C1
C2, C3, C16, C18
C4, C6, C17, C19
R12
TP7
TP10
TP1
TP11
TP12
J1
J2
U1
LED-
1 2 3
5 6 7
14 13 12
10
9 8
J7
4 11
J5
TP3
TP2
LED+
J4
Schematic

2 Schematic

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2
Figure 2. Board Schematic
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3 Pin Descriptions

Pin Name Description Application Information
1 V 2 COMP Compensation Connect a capacitor to AGND.
3 CSH Current Sense High dimming, connect a controlled current source or a potentiometer
4 RCT Resistor Capacitor Timing
5 AGND Analog Ground
6 OVP Over-Voltage Protection voltage lockout (OVLO). Turn-off threshold is 1.24V and
7 nDIM Not DIM input
8 NC No Connection Leave open. 9 PGND Power Ground
10 GATE Gate Drive Output Connect to the gate of the external NFET. 11 V
12 IS Main Switch Current Sense R
13 HSP
14 HSN
DAP Star ground, connecting AGND and PGND.
(15)
IN
CC
DAP Thermal pad on bottom of IC
Pin Descriptions
Input Voltage
Internal Regulator Output Bypass with a 2.2 µF–3.3 µF, ceramic capacitor to PGND.
High-Side LED Current Sense Connect through a series resistor to the positive side of the LED
Positive current sense resistor.
High-Side LED Current Sense Connect through a series resistor to the negative side of the
Negative LED current sense resistor.
Bypass with 100 nF capacitor to AGND as close to the device as possible in the circuit board layout.
Connect a resistor to AGND to set the signal current. For analog to AGND as detailed in the Analog Dimming section.
Connect a resistor from the switch node and a capacitor to AGND to set the switching frequency.
Connect to PGND through the DAP copper circuit board pad to provide proper ground return for CSH, COMP, and RCT.
Connect to a resistor divider from VOto program output over­hysteresis for turn-on is provided by 20 µA current source.
Connect a PWM signal for dimming as detailed in the PWM Dimming section and/or a resistor divider from VINto program input under-voltage lockout (UVLO). Turn-on threshold is 1.24V and hysteresis for turn-off is provided by 20 µA current source.
Connect to AGND through the DAP copper circuit board pad to provide proper ground return for GATE.
Connect to the drain of the main N-channel MosFET switch for
sensing or to a sense resistor installed in the source of
DS-ON
the same device.

4 Bill of Materials

Qty Part ID Part Value Manufacturer Part Number
2 C1, C4 0.1 µF X7R 10% 100V TDK C2012X7R2A104K 4 C2, C3, C16, C18 4.7 µF X7R 10% 100V MURATA GRM55ER72A475KA01L 3 C6, C17, C19 2.2 µF X7R 10% 100V TDK C4532X7R2A225K 1 C7 1000 pF COG/NPO 5% 50V MURATA GRM2165C1H102JA01D 1 C8 1 µF X7R 10% 16V MURATA GRM21BR71C105KA01L 1 C9 2.2 µF X7R 10% 16V MURATA GRM21BR71C225KA12L 1 C12 0.1 µF X7R 10% 25V MURATA GRM21BR71E104KA01L 1 D1 Schottky 100V 12A VISHAY 12CWQ10FNPBF 4 J1, J2, J4, J5 banana jack KEYSTONE 575-8 1 J7 2 x 7 shrouded header SAMTEC TSSH-107-01-SDRA 1 L1 33 µH 20% 6.3A COILCRAFT MSS1278-333MLB 1 Q1 NMOS 100V 40A VISHAY SUD40N10-25 1 Q3 NMOS 60V 260 mA ON-SEMI 2N7002ET1G 1 R1 12.4 k1% VISHAY CRCW080512k4FKEA 1 R2 01% VISHAY CRCW08050000Z0EA 2 R3, R20 101% VISHAY CRCW080510R0FKEA
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Bill of Materials
1 R4 16.9 k1% VISHAY CRCW080516k9FKEA 1 R5 1.43 k1% VISHAY CRCW08051k43FKEA 1 R6 0.041% 1W VISHAY WSL2512R0400FEA 2 R7, R8 1.0 k1% VISHAY CRCW08051k00FKEA 1 R9 0.11% 1W VISHAY WSL2512R1000FEA 1 R10 35.7 k1% VISHAY CRCW080535k7FKEA 1 R11 15.8 k1% VISHAY CRCW080515k8FKEA 2 R12, R13 10.0 k1% VISHAY CRCW080510k0FKEA 1 R18 750 k1% VISHAY CRCW0805750kFKEA 7 TP1, TP2, TP3, TP7, turret KEYSTONE 1502-2
1 U1 Buck-boost controller TI LM3429
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TP10, TP11, TP12
4
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5 PCB Layout

PCB Layout
Figure 3. Top Layer
Figure 4. Bottom Layer
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5
C7 = 1 nF R10 = 35.7 k:
2525
=
35.7 k: x 1 nF
fSW =
R10 x C7
= 700 kHz
2525
=
700 kHz x 1 nF
= 35.7 k:
R10 =
fSW x C7
683.0
D
MAX
===
VV
MININO--
V10V5.31 -
V5.31
V
O
175.0
D
MIN
===
VV
MAXINO--
V26V5.31 -
V5.31
V
O
762.0238.01D1'D
=
-
=
-
=
238.0D===
V24V5.31 -
V5.31
V
O
VV
INO
-
:
=
:x
=
x
=
925.2m3259rNr
LEDD
V31.5V5.39VNV
LEDO
=
x
=
x
=
Design Procedure

6 Design Procedure

Refer to LM3429 LM3429Q1 N-Channel Controller for Constant Current LED Drivers (SNVS616) data sheet for design considerations.

6.1 Specifications

N = 9 V
= 3.5V
LED
r
= 325 m
LED
VIN= 24V V
= 10V; V
IN-MIN
fSW= 700 kHz V
= 100 mV
SNS
I
= 1A
LED
Δi
= 250 mA
L-PP
Δi Δv
I
LIM
V V
LED-PP
IN-PP
= 6A
TURN-ON
TURN-OFF
= 17 mA
= 100 mV
IN-MAX
= 10V; V
= 60V; V
HYS
HYSO
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= 27V
= 3V
= 15V

6.2 Operating Point

Solve for VOand rD:
Solve for D, D', D
MAX
, and D

6.3 Switching Frequency

Assume C7 = 1 nF and solve for R10:
The closest standard resistor is actually 35.7 ktherefore the fSWis:
The chosen components from step 2 are:
MIN
(1) (2)
:
(3) (4)
(5)
(6)
(7)
(8)
6
AN-1986 LM3429 Boost Evaluation Board SNVA404B–July 2009–Revised May 2013
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(9)
DI
LED
x
=
'i
PP-LED
SW
fxrDx
C
O
= =
kHz007925.2 xx:
17.6mA
238.0A1 x
F6.6 P
'i
PP-LED
f
'i
r
SWPP-LEDD
xx
DI
LED
x
CO=
= F84.6 P=
kHz007mA17925.2 xx:
238.0A1 x
C
O
H331L P
=
A31.1
I
12
1
1
I
RMSL
RMSL
=
+
x
=
-
-
I
I
LED
RMSL
x
=
-
12
1
1
2
x
+
¸
¸ ¹
·
¨
¨ ©
§
Di
PPL
c
x
'
-
I
LED
D
c
762.0mA247
2
x
x
¸
¸ ¹
·
¨
¨ ©
§
A1
762.0
A1
PP-==L
DVINx
f1LSWx
kHz007H33 xP
238.0V42 x
mA247
=
'i
==
DVINx
fSWx
238.0V42 x
PH
32.6
=
1L
PP-'iL
kHz007250 mA x
:
k4.21R1
=
:
k1R7R8
==
0.1R9
=
:
LED
= =
k0.11.24V :x
A0.1=
k4.121.0 :x:
R1R9 x
R81.24Vx
1A x 12.4 k: x 0.1:
=
1.24V
= 1.0 k:
I
LED
x R1 x R9
1.24V
:
===
1.0
1A
I
LED
mV100
V
SNS
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6.4 Average LED Current

Solve for R9:
Assume R1 = 12.4 kand solve for R8:
The closest standard resistor for R9 is 0.1and the closest for R8 (and R7) is actually 1 ktherefore I is:
The chosen components from step 3 are:

6.5 Inductor Ripple Current

Solve for L1:
The closest standard inductor is 33 µH therefore the actual Δi
L-PP
Design Procedure
(10)
(11)
LED
(12)
(13)
(14)
is:
Determine minimum allowable RMS current rating:
The chosen component from step 4 is:

6.6 Output Capacitance

Solve for CO:
A total value of 6.6 µF (using 3 2.2 µF X7R ceramic capacitors) is chosen therefore the actual Δi
LED-PP
(15)
(16)
(17)
(18)
is:
Determine minimum allowable RMS current rating:
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(19)
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7
1
=
F097.01P==C12
10:
x
sec
rad
M04.1
10:
3P
Zx
1010max(
1P
xZ
=
x
=
,
1Z1P
ZZ
sec
rad
k104
=
sec
rad
M04.110=x
3P
Z
3P
Z
)
F11.0
1
1
C8 P===
76.1
e5
sec
rad
6
x :
e5
6
2P
xZ
:
= =
sec
rad
76.1=
sec
rad
k52
59005x59005x
1Z
Z
2P
=Z
),min(
1Z1P
ZZ
T50Ux
=T0U= 5900=
04.0A1 :
x
V310762.0
x
RI
LIMLED
x
V310D
x
c
sec
rad
k52===
762.0925.2
2
x:
H33P
Dr
2
D
c
x L1
1Z
Z
sec
rad
k104===
2
F6.6
2.925:
Px
COrDx
2
1P
Z
0.04:R6=
:04.0
===
6.1A
mV245mV245
I
LIM
R6
:=== 041.0
6A
R6
mV245mV245
I
LIM
F2.2C6 = C17 = C19 P=
x
A1
=
I
LED
I
RMSCO-
=
1- 0.683
683.0
1.47A
x
1- D
MAX
D
MAX
=
Design Procedure
The chosen components from step 5 are:

6.7 Peak Current Limit

Solve for R6:
The closest standard resistor is 0.04 therefore I
The chosen component from step 6 is:

6.8 Loop Compensation

ω
is approximated:
P1
LIM
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(20)
(21)
(22)
is:
(23)
(24)
(25)
ω
is approximated:
Z1
(26)
TU0is approximated:
(27)
To ensure stability, calculate ωP2:
(28)
Solve for C8:
(29)
Since PWM dimming can be evaluated with this board, a much larger compensation capacitor C8 = 1.0 µF is chosen.
To attenuate switching noise, calculate ωP3:
(30)
Assume R20 = 10and solve for C12:
(31)
The chosen components from step 7 are:
8
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D1 o 12A, 100V, DPAK
mW600mV600A1VIP
FDDD
=
x
=
x
=
A1II
LEDMAXD==-
V5.31VV
OMAXRD==-
Q1 o 40A, 100V, DPAK
mW20m50mA640RIP
2
DSON
2
RMSTT
=
:x
=
x
=
-
x
I
RMST=-
I
LED
D
c
=
x
mA640
=
0.238
A1
762.0
D
=
A2.2A1=x
683.01-
683.0
I
MAXT-
V5.31VV
OMAXT==-
C2 = C3 = C16 = C18 = 4.7 PF
mA72
mA250
==
I
RMSIN=-
'i
PP-L
12 12
C
IN
==
kHz700mV100 x
250 mA
F0.45P=
f
'v
SWPPIN-
x
'i
PP-L
x8 x8
F1.0C12 P=
F1.0C8 P=
:10R20=
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6.9 Input Capacitance

Solve for the minimum CIN:
To minimize power supply interaction a much larger capacitance of approximately 20 µF is used, therefore the actual Δv
is much lower. Since high voltage ceramic capacitor selection is limited, four 4.7 µF X7R
IN-PP
capacitors are chosen. Determine minimum allowable RMS current rating:
The chosen components from step 8 are:

6.10 NFET

Determine minimum Q1 voltage rating and current rating:
Design Procedure
(32)
(33)
(34)
(35)
A 100V NFET is chosen with a current rating of 40A due to the low R PT:
The chosen component from step 9 is:

6.11 Diode

Determine minimum D1 voltage rating and current rating:
A 100V diode is chosen with a current rating of 12A and VD= 600 mV. Determine PD:
The chosen component from step 10 is:
= 50 m. Determine I
DS-ON
T-RMS
(36)
(37)
and
(38) (39)
(40)
(41) (42)
(43)

6.12 Input UVLO

Since PWM dimming will be evaluated a three resistor network will be used. Assume R13 = 10 kand solve for R5:
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9
Copyright © 2009–2013, Texas Instruments Incorporated
R11 = 15.8 k: R18 = 750 k:
=
V
OFFTURN=-
V= 40
R11
k8.15 :
( )
k750k8.151.24V :+:x
(
)
R18
R11
1.24V +x
V
OFFTURN-
:== k15.8
--1.24VV
OFFTURN
x R181.24V
=R11
:x k7501.24V
-1.24V60V
15VA20k750A20
R18
V
HYSO
=
x:
=
x
=
P
P
===
A
20
15V
R18
P
:k750
V
HYSO
A20
P
k:10R13
=
k:1.43R5
=
k:16.9R4
=
HYS
=
R5
20 PA x 16.9 k: x (1.43 k: + 10 k:)
1.43 k:
HYS
=
+ 20 PA x R
UV2
20 PA x R4 x (R5 + R13)
+ 20 PA x 10 k: = 2.9V
=
16.9 k:
=
20 PA x (1.43 k: + 10 k:)
R4
=
R4
(
)
R5 xx R13
V
HYS
- 20 PA R5
R13+
(
)
20 PA
x
(
:
)
x k10k1.43
2.9V - 20 PA
: x
R5
(
)
R13R51.24V +x
V
ONTURN=-
= V9.91=
( )
k10k1.431.24V :+:x
k1.43 :
V
ONTURN-
:== k1.43
--1.24VV
ONTURN
x R131.24V
=
R5
:x k101.24V
-1.24V10V
Design Procedure
The closest standard resistor is 1.43 ktherefore V
Solve for R4:
The closest standard resistor is 16.9 kmaking V
The chosen components from step 11 are:
TURN-ON
:
HYS
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(45)
is:
(46)
(47)
(48)

6.13 Output OVLO

Solve for R18:
The closest standard resistor is 750 ktherefore V
Solve for R11:
The closest standard resistor is 15.8 kmaking V
The chosen components from step 12 are:
HYSO
TURN-OFF
(49)
(50)
is:
(51)
(52)
:
(53)
(54)
10
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V
DIM
(V)
V
DIM
4 ms/DIV
I
LED
I
LED
(A)
10
5
0
1.0
0.0
-1.0
I
LED
(A)
V
SW
(V)
40
20
0
1.0
0.5
0.0
I
LED
V
SW
2 Ps/DIV
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7 Typical Waveforms

TA= +25°C, VIN= 24V and VO= 31.5V.
Figure 5. Standard Operation Figure 6. 200Hz 50% PWM Dimming
TP1 Switch Node Voltage (VSW) TP11 Dim Voltage (V
LED Current (I

8 Alternate Designs

Alternate designs with the LM3429 evaluation board are possible with very few changes to the existing hardware. The evaluation board FETs and diodes are already rated higher than necessary for design flexibility. The input UVLO, output OVP, input and output capacitance can remain the same for the designs shown below. These alternate designs can be evaluated by changing only R9, R10, and L1.
Table 1 gives the main specifications for four different designs and the corresponding values for R9, R10,
and L1. PWM dimming can be evaluated with any of these designs.
) LED Current (I
LED
Typical Waveforms
)
DIM
)
LED
Table 1. Alternate Design Specifications
Specification / Design 1 Design 2 Design 3 Design 4 Component
V
IN
V
O
f
SW
I
LED
R9 0.05 0.2 0.04 0.08Ω R10 41.2 k 35.7 k 49.9 k 35.7 k L1 22µH 68µH 15µH 33µH
10V 15V 20V 25V 14V 21V 28V 35V 600kHz 700kHz 500kHz 700kHz 2A 500mA 2.5A 1.25A
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