TEXAS INSTRUMENTS ULN2003AI Technical data

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D, N, OR PW PACKAGE

(TOP VIEW)

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

1B
2B
3B
4B
5B
6B
7B

E

1C
2C
3C
4C
5C
6C
7C
COM

FEATURES

• 500-mA-Rated Collector Current (Single

Output)

• High-Voltage Outputs . . . 50 V

• Output Clamp Diodes

• Inputs Compatible With Various Types of

Logic

• Relay-Driver Applications

DESCRIPTION/ORDERING INFORMATION

The ULN2003AI is a high-voltage, high-current
Darlington transistor array. This device consists of
seven npn Darlington pairs that feature high-voltage
outputs with common-cathode clamp diodes for
switching inductive loads. The collector-current rating
of a single Darlington pair is 500 mA. The Darlington
pairs can be paralleled for higher current capability.
Applications include relay drivers, hammer drivers,
lamp drivers, display drivers (LED and gas
discharge), line drivers, and logic buffers.

ULN2003AI

HIGH-VOLTAGE, HIGH-CURRENT

DARLINGTON TRANSISTOR ARRAY

SLRS054B – JULY 2003 – REVISED FEBRUARY 2005

The ULN2003AI has a 2.7-k Ω series base resistor for each Darlington pair for operation directly with TTL or 5-V
CMOS devices.

ORDERING INFORMATION

T

A

PDIP (N) Tube of 425 ULN2003AIN ULN2003AIN

–40 ° C to 105 ° C SOIC (D) ULN2003AI

TSSOP (PW) Reel of 2000 ULN2003AIPWR UN2003AI

PACKAGE ORDERABLE PART NUMBER TOP-SIDE MARKING

Tube of 40 ULN2003AID
Reel of 2500 ULN2003AIDR

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2003–2005, Texas Instruments Incorporated

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7C

6C

5C

4C

3C

2C

1C

COM

7

6

5

4

3

2

1

7B

6B

5B

4B

3B

2B

1B

10

11

12

13

14

15

16

9

Output
C

COM

E

7.2 kΩ

3 kΩ

2.7 kΩ

Input

B

All resistor values shown are nominal.

ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY

SLRS054B – JULY 2003 – REVISED FEBRUARY 2005

LOGIC DIAGRAM

SCHEMATICS (EACH DARLINGTON PAIR)

2

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HIGH-VOLTAGE, HIGH-CURRENT

DARLINGTON TRANSISTOR ARRAY

SLRS054B – JULY 2003 – REVISED FEBRUARY 2005

Absolute Maximum Ratings

at 25 ° C free-air temperature (unless otherwise noted)

V

V

I

T

θ

T
T

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings

(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
(3) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient

(4) The package thermal impedance is calculated in accordance with JESD 51-7.

Collector-emitter voltage 50 V

CC

Clamp diode reverse voltage
Input voltage

I

Peak collector current
Output clamp current 500 mA

OK

(2)

(3) (4)

Total emitter-terminal current –2.5 A
Operating free-air temperature range –40 105 ° C

A

Package thermal impedance

JA

Operating virtual junction temperature 150 ° C

J

Storage temperature range –65 150 ° C

stg

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

temperature is PD= (TJ(max) – TA)/ θJA. Operating at the absolute maximum TJof 150 ° C can affect reliability.

(1)

MIN MAX UNIT

(2)

D package 73

(3) (4)

N package 67 ° C/W
PW package 108

ULN2003AI

50 V
30 V

500 mA

Electrical Characteristics

TA= 25 ° C

V

I(on)

V

CE(sat)

I

CEX

V

F

I

I(off)

I

I

I

R

C

i

PARAMETER TEST FIGURE TEST CONDITIONS MIN TYP MAX UNIT

IC= 200 mA 2.4

On-state input voltage 5 V

= 2 V IC= 250 mA 2.7 V

CE

IC= 300 mA 3

II= 250 µ A, IC= 100 mA 0.9 1.1

Collector-emitter saturation voltage 4 II= 350 µ A, IC= 200 mA 1 1.3 V

II= 500 µ A, IC= 350 mA 1.2 1.6

Collector cutoff current 1 V

= 50 V, II= 0 50 µ A

CE

Clamp forward voltage 7 IF= 350 mA 1.7 2 V
Off-state input current 2 V

= 50 V, IC= 500 µ A 50 65 µ A

CE

Input current 3 VI= 3.85 V 0.93 1.35 mA
Clamp reverse current 6 VR= 50 V 50 µ A
Input capacitance VI= 0, f = 1 MHz 15 25 pF

3

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ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY

SLRS054B – JULY 2003 – REVISED FEBRUARY 2005

Electrical Characteristics

TA= –40 ° C to 105 ° C

PARAMETER TEST FIGURE TEST CONDITIONS MIN TYP MAX UNIT

V

I(on)

V

CE(sat)

I

CEX

V

F

I

I(off)

I

I

I

R

C

i

Switching Characteristics

TA= 25 ° C

t

PLH

t

PHL

V

OH

On-state input voltage 5 V

Collector-emitter saturation voltage 4 II= 350 µ A, IC= 200 mA 1 1.4 V

Collector cutoff current 1 V
Clamp forward voltage 7 IF= 350 mA 1.7 2.2 V
Off-state input current 2 V
Input current 3 VI= 3.85 V 0.93 1.35 mA
Clamp reverse current 6 VR= 50 V 100 µ A
Input capacitance VI= 0, f = 1 MHz 15 25 pF

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Propagation delay time, low- to high-level output See Figure 8 0.25 1 µ s
Propagation delay time, high- to low-level output See Figure 8 0.25 1 µ s
High-level output voltage after switching VS= 50 V, IO≈ 300 mA, See Figure 9 VS– 20 mV

IC= 200 mA 2.7

= 2 V IC= 250 mA 2.9 V

CE

IC= 300 mA 3

II= 250 µ A, IC= 100 mA 0.9 1.2

II= 500 µ A, IC= 350 mA 1.2 1.7

= 50 V, II= 0 100 µ A

CE

= 50 V, IC= 500 µ A 30 65 µ A

CE

Switching Characteristics

TA= –40 ° C to 105 ° C

t
t
V

Propagation delay time, low- to high-level output See Figure 8 1 10 µ s

PLH

Propagation delay time, high- to low-level output See Figure 8 1 10 µ s

PHL

High-level output voltage after switching VS= 50 V, IO≈ 300 mA, See Figure 9 VS– 50 mV

OH

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

4

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PARAMETER MEASUREMENT INFORMATION

Open

V

CE

Open

I

CEX

Figure 1. I

CEX

Test Circuit

Open

V

CE

I

C

I

I(off)

Figure 2. I

I(off)

Test Circuit

Open

Open

I

I(on)

V

I

Figure 3. I

I

Test Circuit

Open

V

CE

I

C

I

I

hFE =

I

C

I

I

NOTE: II is fixed for measuring V

CE(sat)

, variable for

measuring hFE.

Figure 4. hFE, V

CE(sat)

Test Circuit

Open

V

CE

I

C

V

I(on)

Figure 5. V

I(on)

Test Circuit

V

R

Open

I

R

Figure 6. I

R

Test Circuit

I

F

V

F

Open

Figure 7. VF Test Circuit

ULN2003AI

HIGH-VOLTAGE, HIGH-CURRENT

DARLINGTON TRANSISTOR ARRAY

SLRS054B – JULY 2003 – REVISED FEBRUARY 2005

5