+ –
V
IN
V
OUT
12V to 21V
M2
R
B
R
A
R
B
M1
L2
D2
D1
C
OUT
R
A
CPCC
PC
CZCC
ZC
RZCR
ZC
C
SS
R
RDM
R
RT
T1
T2
C
CDR
R
DMX
R
SYN
C
REF
R
PK1
R
PK2
C
ZV
R
ZV
C
PV
R
S
R
S
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
CAOA
CAOB PKLMT
GND
VAO
VINAC
VSENSE
CSA
CSB
RT
CDR
SS
GDB
GDA
IMO VCC
RSYNTH
VREF
DMAX
RDM
R
IMO
To CSB
To CSA
From Ixfrms
L1
UCC28070
www.ti.com
Two-Phase Interleaved CCM PFC Controller
1
FEATURES APPLICATIONS
• Interleaved Average Current-Mode PWM
Control with Inherent Current Matching
• Advanced Current Synthesizer Current
Sensing for Superior Efficiency and PF
• Highly-Linear Multiplier Output with Internal
Quantized Voltage Feed-Forward Correction
for Near-Unity PF
• Programmable Frequency (up to 300 kHz)
• Programmable Maximum Duty-Cycle Clamp
• Programmable Frequency Dithering Rate and
Magnitude for Enhanced EMI Reduction
– Magnitude: Up to 30 kHz
– Rate: Up to 30 kHz
• External Clock Synchronization Capability
• Enhanced Load and Line Transient Response
through Voltage Amplifier Output Slew-Rate
Correction
• Programmable Peak Current Limiting
• Bias-Supply UVLO, Over-Voltage Protection,
Open-Loop Detection, and PFC-Enable
Monitoring
• External PFC-Disable Interface
• Open-Circuit Protection on VSENSE and
VINAC pins
• Programmable Soft Start
• 20-Lead TSSOP Package
SLUS794 – NOVEMBER 2007
• High-Efficiency Server and Desktop Power
Supplies
• Telecom Rectifiers
DESCRIPTION
The UCC28070 is an advanced power factor
correction device that integrates two pulse-width
modulators (PWMs) operating 180 ° out of phase.
This Natural Interleaved PWM operation generates
substantial reduction in the input and output ripple
currents, and the conducted-EMI filtering becomes
easier and less expensive. A significantly improved
multiplier design provides a shared current reference
to two independent current amplifiers that ensures
matched average current mode control in both PWM
outputs while maintaining a stable, low-distortion
sinusoidal input line current.
The UCC28070 contains multiple innovations
including current synthesis and quantized voltage
feed-forward to promote performance enhancements
in PF, efficiency, THD, and transient response.
Features including frequency dithering, clock
synchronization, and slew rate enhancement further
expand the potential performance enhancements.
The UCC28070 also contains a variety of protection
features including output over-voltage detection,
programmable peak-current limit, in-rush current
detection, under-voltage lockout, and open-loop
protection.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCT PREVIEW information concerns products in the
formative or design phase of development. Characteristic data and
other specifications are design goals. Texas Instruments reserves
the right to change or discontinue these products without notice.
Typical Application Diagram
Copyright © 2007, Texas Instruments Incorporated
UCC28070
SLUS794 – NOVEMBER 2007
ORDERING INFORMATION
PART NUMBER PACKAGE PACKING
UCC28070PW Plastic, 20-Pin TSSOP (PW) 70-Pc. Tube
UCC28070PWR Plastic, 20-Pin TSSOP (PW) 2000-Pc. Tape and Reel
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
Supply voltage: VCC 22 V
Supply current: I
Voltage: GDA, GDB − 0.5 to VCC+0.3 V
Gate drive current – continuous: GDA, GDB +/ − 0.25
Gate drive current – pulsed: GDA, GDB +/ − 0.75
Voltage: DMAX, RDM, RT, CDR, VINAC, VSENSE, SS, VAO, IMO, CSA, CSB,
CAOA, CAOB, PKLMT, VREF
Current: RT, DMAX, RDM, RSYNTH − 0.5
Current: VREF, VAO, CAOA, CAOB, IMO 10
Operating junction temperature, T
Storage temperature, T
Lead temperature (10 seconds) 260
(1) These are stress limits. Stress beyond these limits may cause permanent damage to the device. Functional operation of the device at
these or any conditions beyond those indicated under RECOMMENDED OPERATING CONDITIONS is not implied. Exposure to
absolute maximum rated conditions for extended periods of time may affect device reliability.
(2) All voltages are with respect to GND.
(3) All currents are positive into the terminal, negative out of the terminal.
(4) In normal use, terminals GDA and GDB are connected to an external gate driver and are internally limited in output current.
VCC
STG
ELECTROSTATIC DISCHARGE (ESD) PROTECTION
Human Body Model (HBM) 2,000
Charged Device Model (CDM) 500
(1) (2) (3) (4)
PARAMETER LIMIT UNIT
20 mA
− 0.5 to +7 V
J
RATING UNIT
− 40 to +125
− 65 to +150 ° C
A
mA
V
DISSIPATION RATINGS
PACKAGE TA= 85 ° C POWER RATING
20-Pin TSSOP 125 ° C/Watt
(1) Thermal resistance is a strong function of board construction and layout. Air flow reduces thermal resistance. This number is only a
general guide.
(2) Thermal resistance calculated with a low-K methodology.
THERMAL IMPEDANCE TA= 25 ° C POWER
JUNCTION-TO-AMBIENT RATING
(1)
(2)
and
800 mW
(1)
320 mW
(1)
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN MAX UNIT
VCC Input Voltage (from a low-impedance source) V
VREF Load Current 2 mA
VINAC Input Voltage Range 0 3
IMO Voltage Range 0 3.3 V
PKLMT, CSA, & CSB Voltage Range 0 3.7
RSYNTH Resistance (R
RDM Resistance (R
2 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
) 15 750
SYN
) 30 330
RDM
Product Folder Link(s): UCC28070
+ 1 V 21 V
UVLO
k Ω
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range − 40 ° C < TA< 125 ° C, TJ= TA, VCC = 12 V, GND = 0 V, R
k Ω , R
Bias Supply
VCC
V
UVLO
Linear Regulator
PFC Enable
V
EN
External PFC Disable
Oscillator
V
DMAX
and V
f
PWM
D
MAX
f
DM
f
DR
I
CDR
(1) Excessive VCC input voltage and/or current damages the device. This clamp will not protect the device from an unregulated supply. If
= R
RDM
SYN
= 100 k Ω , R
IMO
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
SHUNT
VCC shunt voltage
VCC current, disabled VSENSE = 0 V 7
VCC current, enabled VSENSE = 3 V (no switching) 8 TBD
VCC current, UVLO
UVLO turn-on threshold Measured at VCC (rising) 9.8 10.2 10.6
UVLO hysteresis Measured at VCC (falling) 1 V
VREF enable threshold Measured at VCC (rising) TBD 8 TBD
VREF voltage, no load I
VREF voltage, full load I
VREF voltage, over line 11 V < VCC < 20 V, I
Enable threshold Measured at VSENSE (rising) 0.65 0.75 0.85
Enable hysteresis 0.15
Disable threshold Measured at SS (falling) TBD 0.6
Hysteresis VSENSE > 0.85 V 0.15
Output phase shift Measured between GDA and GDB TBD 180 TBD Degree
,V
,
RT
RDM
Timing regulation voltages Measured at DMAX, RT, & RDM 3 V
PWM switching frequency kHz
Duty-cycle clamp TBD% 95% TBD%
Minimum programmable off-time TBD 133 TBD ns
Frequency dithering magnitude R
Change in f
PWM
Frequency dithering rate C
Rate of change in f
Dither rate current Measure at CDR (sink and source) 10 µ A
Dither disable threshold Measured at C
an unregulated supply is used, a series-connected fixed positive voltage regulator such as a UA78L15A is recommended. See the
Absolute Maximum Ratings section for the limits on VCC voltage and current.
= 16 k Ω , C
(1)
PWM
SLUS794 – NOVEMBER 2007
= 75 k Ω , R
RT
CDR
= 625 pF, C
I
VCC
= C
SS
VREF
= 0.1 µ F, C
= 1 µ F, (unless otherwise noted)
VCC
= 10 mA 21 23 25 V
VCC = 7 V 100 µ A
VCC = 9 V 4 TBD mA
= 0 mA 5.9 6 6.1
VREF
= − 2 mA 5.8 6 6.1 V
VREF
= 0 mA 5.9 6 6.1
REF
R
RT
V
RDM
R
RT
V
RDM
R
RT
V
RDM
R
RT
V
RDM
RDM
R
RDM
CDR
C
CDR
= 250 k Ω , R
= 0 V, V
= 25 k Ω , R
= 0 V, V
= 75 k Ω , R
= 0 V, V
= 25 k Ω , R
= 0 V, V
= 313 k Ω , R
= 31 k Ω , R
= 2.2 nF, R
= 0.22 nF, R
= 225 k Ω ,
DMX
= 6 V
CDR
= 22.5 k Ω ,
DMX
= 6 V
CDR
= 67.5 k Ω ,
DMX
= 6 V
CDR
= 22.5 k Ω ,
DMX
= 6 V
CDR
= 75 k Ω 2.5 3 3.5
RT
= 25 k Ω 27 30 33
RT
= 100 k Ω 3
RDM
= 100 k Ω 30
RDM
(rising) 5 TBD V
CDR
27 30 33
270 300 330
UCC28070
= 67.5
DMX
mA
V
V
kHz
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): UCC28070
UCC28070
SLUS794 – NOVEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range − 40 ° C < TA< 125 ° C, TJ= TA, VCC = 12 V, GND = 0 V, R
k Ω , R
Clock Synchronization
V
CDR
Voltage Amplifier
g
MV
I
SRC
Soft Start
I
SS
(2) Due to the programmability of the maximum PWM switching duty cycle (D
= R
RDM
SYN
= 100 k Ω , R
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
SYNC enable threshold Measured at CDR (rising) 5 TBD V
SYNC propagation delay 50 TBD ns
SYNC threshold (Rising) V
SYNC threshold (Falling) V
SYNC pulses
VSENSE voltage In regulation, TA= 25 ° C 2.97 3 3.03
VSENSE voltage In regulation 2.94 3 3.06
VSENSE input bias current In regulation 250 TBD nA
VAO high voltage VSENSE = 2.9 V 4.8 5 5.2
VAO low voltage VSENSE = 3.1 V 0.05 TBD
VAO transconductance 2.8 V < VSENSE < 3.2 V, VAO = 3 V 70 µ S
VAO sink current, overdriven limit VSENSE = 3.5 V, VAO = 3 V 30
VAO source current, overdriven VSENSE = 2.5 V, VAO = 3 V, SS = 3 V − 30
VAO source current,
overdriven limit + I
Slew-rate correction threshold 92 93 95 %
Slew-rate correction hysteresis Measured at VSENSE (rising) 6 TBD mV
Slew-rate correction current − 100 µ A
Slew-rate correction enable threshold Measured at SS (rising) 4 V
VAO discharge current VSENSE = 0.5 V, VAO = 1 V 10 µ A
SS source current VSENSE = 0.9 V, SS = 1 V − 10 µ A
Adaptive source current VSENSE = 1.1 V, SS = 1 V − 1 mA
Adaptive SS disable Measured as VSENSE – SS 0 mV
SS sink current VSENSE = 0.5 V, SS = 0.2 V 0.5 0.9 mA
be reasonably (~5-10%) less than 2 x D
IMO
SRC
= 16 k Ω , C
CDR
= 625 pF, C
V
CDR
GDx (rising)
CDR
CDR
= 75 k Ω , R
= C
SS
VREF
= 0.1 µ F, C
= 1 µ F, (unless otherwise noted)
VCC
RT
= 6 V, Measured from RDM (rising) to
= 6 V, Measured at RDM (rising) 1.2 1.5
= 6 V, Measured at RDM (falling) 0.4 0.7
= 67.5
DMX
V
Positive pulse width 0.2 µ s
Maximum duty cycle
(2)
75 %
V
V
µ A
VSENSE = 2.5 V, VAO = 3 V − 130
Measured as VSENSE (falling) / VSENSE
(regulation)
Measured at VAO, in addition to VAO
source current.
), the maximum duty cycle of a synchronization pulse must
-1.
MAX
MAX
4 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): UCC28070
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range − 40 ° C < TA< 125 ° C, TJ= TA, VCC = 12 V, GND = 0 V, R
k Ω , R
Over Voltage
V
OVP
Zero-Power
V
ZPWR
Multiplier
k
MULT
I
IMO
Quantized Voltage Feed Forward
V
LVL1
V
LVL2
V
LVL3
V
LVL4
V
LVL5
V
LVL6
V
LVL7
V
LVL8
Current Amplifiers
g
MC
(3) The Level 1 threshold represents the “ zero-crossing detection ” threshold above which VINAC must rise to initiate a new input half-cycle,
= R
RDM
SYN
= 100 k Ω , R
IMO
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
OVP threshold 104 106 108 %
OVP hysteresis Measured at VSENSE (falling) 100 mV
OVP propagation delay TBD 0.5 µ s
Zero-power detect threshold Measured at VAO (falling) TBD 0.75
Zero-power hysteresis 0.15
Gain constant µ A
Output current: zero µ A
Level 1 threshold
(3)
Level 2 threshold 1
Level 3 threshold 1.2
Level 4 threshold 1.4
Level 5 threshold 1.65
Level 6 threshold 1.95
Level 7 threshold 2.25
Level 8 threshold 2.6
CAOx high voltage TBD 6
CAOx low voltage TBD 0.1
CAOx transconductance 100 µ S
CAOx sink current, overdriven 50
CAOx source current, overdriven − 50
Input common mode range 0 3.6 V
Input offset voltage IMO = 0 V − 1 − 3 − 5
Phase mismatch TBD 0 TBD
CAOx pull-down current VSENSE = 0.5 V, CAOx = 0.2 V 0.5 0.9 mA
and below which VINAC must fall to terminate that half-cycle.
= 16 k Ω , C
SLUS794 – NOVEMBER 2007
= 75 k Ω , R
RT
CDR
= 625 pF, C
= C
SS
VREF
= 0.1 µ F, C
= 1 µ F, (unless otherwise noted)
VCC
Measured as VSENSE (rising) / VSENSE
(regulation)
Measured between VSENSE (rising) and
GDx (falling)
VAO > 1.5 V 16 17 18
VAO = 1.2 V 15 17 19
VINAC = 0.9 VPK, VAO = 0.8 V -0.2 0 0.2
VINAC = 0 V, VAO = 5 V -0.2 0 0.2
0.6 0.7 0.8
Measured at VINAC (rising) V
Measured as Phase A ’ s input offset minus
Phase B ’ s input offset
UCC28070
= 67.5
DMX
V
V
µ A
mV
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): UCC28070
GDB
SS
RT
CAOB
GND
VCC
GDA
DMAX
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
VAO
RDM
PKLMT
RSYNTH
CSA
VSENSE
VINAC
IMO
CDR
10
CSB VREF
CAOA
11
UCC28070
SLUS794 – NOVEMBER 2007
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range − 40 ° C < TA< 125 ° C, TJ= TA, VCC = 12 V, GND = 0 V, R
k Ω , R
Current Synthesizer
V
RSYNTH
Peak Current Limit
PWM Ramp
V
RMP
In-Rush Current Detection
Gate Drive
Thermal Shutdown
= R
RDM
SYN
= 100 k Ω , R
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Regulation voltage
Synthesizer disable threshold Measured at RSYNTH (rising) 5 TBD
VINAC input bias current 250 TBD nA
Peak current limit threshold PKLMT = 3.30 V, measured at CSx (rising) 3.27 3.3 3.33 V
Peak current limit propagation delay TBD 100 ns
PWM ramp amplitude 4
PWM ramp offset voltage TA= 25 ° C, R
PWM ramp offset temperature
coefficient
In-rush detection threshold Measured as VSENSE - VINAC 0
In-rush detection hyst. 20
GDA, GDB output voltage, high,
clamped
GDA, GDB output voltage, High C
GDA, GDB output voltage, Low C
Rise time GDx 1 V to 9 V, C
Fall time GDx 9 V to 1 V, C
GDA, GDB output voltage, UVLO VCC = 0 V, I
Thermal shutdown threshold 160
Thermal shutdown recovery 140
IMO
= 16 k Ω , C
= 75 k Ω , R
RT
CDR
= 625 pF, C
= C
SS
VREF
= 0.1 µ F, C
= 1 µ F, (unless otherwise noted)
VCC
VSENSE = 3 V, VINAC = 0 V 3
VSENSE = 3 V, VINAC = 2.85 V 0.15 V
Measured between CSx (rising) and GDx
(falling) edges
= 75 k Ω TBD 0.7 TBD
RT
VCC = 20 V, C
= 1 nF 10 10.5 11.5
LOAD
= 1 nF 0.2 0.3
LOAD
= 1 nF 11.5 13 15
LOAD
= 1 nF 18 30
LOAD
= 1 nF 12 25
LOAD
, I
GDA
= 2.5 mA 1.6 2 V
GDB
= 67.5
DMX
− 2 mV/ ° C
V
mV
V
ns
° C
6 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
DEVICE INFORMATION
TSSOP-20 Top View, PW Package
Product Folder Link(s): UCC28070
NAME PIN # I/O DESCRIPTION
CDR 1 I
RDM
(SYNC)
VAO 3 O connected to Multiplier input and Zero-Power comparator. Connect the voltage regulation loop
VSENSE 4 I
VINAC 5 I Current Synthesis difference amplifier. Connect a resistor-divider network between VIN, VINAC,
IMO 6 O
RSYNTH 7 I
CSB 8 I
CSA 9 I
PKLMT 10 I pin to set the voltage threshold of the cycle-by-cycle peak current limiting comparators. Allows
CAOB 11 O
CAOA 12 O
VREF 13 O
GDA 14 O device suitable for driving the Phase A switching component(s). The output voltage is typically
VCC 15 I
2 I dithering is disabled (CDR > 5 V), the internal master clock will synchronize to positive edges
GND 16 I/O networks to this pin. Connect this pin to the system through a separate trace for high-current
GDB 17 O gate-drivedevice suitable for driving the Phase B switching component(s). The output voltage is
SS 18 I
RT 19 I
DMAX 20 I
UCC28070
SLUS794 – NOVEMBER 2007
TERMINAL FUNCTIONS
Dither Rate Capacitor. Frequency-dithering timing pin. An external capacitor to GND programs
the rate of oscillator dither. Connect the CDR pin to the VREF pin to disable dithering.
Dither Magnitude Resistor . Frequency-dithering magnitude and external synchronization pin. An
external resistor to GND programs the magnitude of oscillator frequency dither. When frequency
presented on the RDM pin. Connect RDM to GND when dithering is disabled and synchronization
is not desired.
Voltage Amplifier Output . Output of transconductance voltage error amplifier. Internally
compensation components between this pin and GND.
Output Voltage Sense . Internally connected to the inverting input of the transconductance
voltage error amplifier in addition to the positive terminal of the Current Synthesis difference
amplifier. Also connected to the OVP, PFC Enable, and slew-rate comparators. Connect to PFC
output with a resistor-divider network.
Scaled AC Line Input Voltage . Internally connected to the Multiplier and negative terminal of the
and GND identical to the PFC output divider network connected at VSENSE.
Multiplier Current Output . Connect a resistor between this pin and GND to set the multiplier
gain.
Current Synthesis Down-Slope Programming . Connect a resistor between this pin and GND to
set the magnitude of the current synthesizer down-slope.
Phase B Current Sense Input . During the on-time of GDB, CSB is internally connected to the
inverting input of Phase B ’ s current amplifier.
Phase A Current Sense Input . During the on-time of GDA, CSA is internally connected to the
inverting input of Phase A ’ s current amplifier.
Peak Current Limit Programming . Connect a resistor-divider network between VREF and this
adjustment for desired Δ ILB.
Phase B Current Amplifier Output . Output of phase B ’ s transconductance current amplifier.
Internally connected to the inverting input of phase B ’ s PWM comparator for trailing-edge
modulation. Connect the current regulation loop compensation components between this pin and
GND.
Phase A Current Amplifier Output . Output of phase A ’ s transconductance current amplifier.
Internally connected to the inverting input of phase A ’ s PWM comparator for trailing-edge
modulation. Connect the current regulation loop compensation components between this pin and
GND.
6-V Reference Voltage and Internal Bias Voltage . Connect a 0.1- µ F ceramic bypass capacitor
as close as possible to this pin and GND.
Phase A ’ s Gate Drive . This limited-current output is intended to connect to a separate gate-drive
clamped to 13.5 V.
Bias Voltage Input . Connect a 0.1- µ F ceramic bypass capacitor as close as possible to this pin
and GND.
Device Ground Reference . Connect all compensation and programming resistor and capacitor
noise isolation.
Phase B ’ s Gate Drive . This limited-current output is intended to connect to a separate
typically clamped to 13.5 V.
Soft-Start and External Fault Interface . Connect a capacitor to GND on this pin to set the
soft-start slew rate based on an internally-fixed 10- µ A current source. The regulation reference
voltage for VSENSE is clamped to V
conditions a 1-mA current source is present at the SS pin until the SS voltage equals the
VSENSE voltage. Pulling the SS pin below 0.6 V immediately disables both GDA and GDB
outputs.
Timing Resistor . Oscillator frequency programming pin. A resistor to GND sets the running
frequency of the internal oscillator.
Maximum Duty-Cycle Resistor . Maximum PWM duty-cycle programming pin. A resistor to GND
sets the PWM maximum duty-cycle based on the ratio of R
until V
SS
exceeds 3 V. Upon recovery from certain fault
SS
/R
.
DMX
RT
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): UCC28070
14
GDA
VCC
17
GDB
+
S Q
Q R
PWM1
+
S Q
Q R
PWM2
CLKB
OffB
IpeakB
+
+
12
CAOA
11
CAOB
Driver
Driver
8 CSB
9
CSA
10
7
CA2
CA1
CLKA
OffA
IpeakA
Gm Amp
Gm Amp
+
+
IpeakA
IpeakB
GND
PKLMT
RSYNTH
C u r r e n t
S y n t h e s i z e r
VINAC
VSENSE
OutA
OutB
GND
Fault
(Clamped at 13.5V)
VCC
(Clamped at 13.5V)
Fault
VSENSE
3 VAO
18 SS
4
3V
250nA
ISS
Mult.
x
x
/
VA
Gm Amp
+
+
+
2.8V
VINAC 5
6 IMO
Slew Rate
Correction
10uA
100uA
5V
250nA
ReStart
+
SS
4V
I
IMO
=
V
VINAC
* (V
VAO
– 1)
K
VFF
* 17uA
Voltage
Feed-
Forward
K
VFF
ReStart
10uA
+
5V
Disable
ReStart
Ext. Disable
1mA
+
Adaptive SS
Control
Logic
20
DMAX
2
RDM/
SYNC
CLKA
CLKB
OffA
OffB
SYNC
Logic
1
CDR
19
RT
Oscillator w/
Freq. Dither
+
5V
SYNC
Enable
Dither
Disable
15 VCC
+
10.2V
16 GND
13 VREF
6V
Linear
Regulator
+
8V
EN
23V
9.2V
S Q
Q R
+
0.75V
ReStart
C
o
ThermSD
160 On
140 Off
0.60V
VSENSE
+
3.18V
+
ZeroPwr 0.75V
VSENSE
SS
0.75V
+
VAO
OVP
Ext. Disable
0.60V
3.08V
0.90V
VINAC
In-Rush
20mV Hys.
20mV
+
Fault
UVLO
UCC28070
SLUS794 – NOVEMBER 2007
Functional Block Diagram
8 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): UCC28070
( )
( )
7500
RT
PWM
R k
f kHz
W =
( )
2 1
DMX RT MAX
R R D= ´ ´ -
UCC28070
SLUS794 – NOVEMBER 2007
APPLICATION INFORMATION
THEORY OF OPERATION
Natural Interleaving
One of the main benefits from the natural interleaving of phases is significant reductions in the high-frequency
ripple components of both the input current and the current into the output capacitor of the PFC pre-regulator.
Compared to that of a single-phase PFC stage of equal power, the reduced ripple on the input current eases the
burden of filtering conducted-EMI noise and helps reduce the EMI filter and C
high-frequency ripple current into the PFC output capacitor, C
, helps to reduce its size and cost. Furthermore,
OUT
with reduced ripple and average current in each phase, the boost inductor size can be smaller than in a
single-phase design [1].
Ripple current reduction due to interleaving is often referred to as “ ripple cancellation ” , but strictly speaking, the
peak-to-peak ripple is completely cancelled only at 50% duty-cycle in a 2-phase system. At duty-cycles other
than 50%, ripple reduction occurs in the form of partial cancellation due to the superposition of the individual
phase currents. Nevertheless, compared to the ripple currents of an equivalent single-phase PFC pre-regulator,
those of a 2-phase naturally-interleaved design are extraordinarily smaller [1]. Independent of ripple cancellation,
the frequency of the naturally-interleaved ripple, at both the input and output, is 2 x f
On the input, natural interleaving reduces the peak-to-peak ripple amplitude to 1/2 or less of the ripple amplitude
of the equivalent single-phase current.
On the output, Natural Interleaving reduces the rms value of the PFC-generated ripple current in the output
capacitor by a factor of slightly more than √ 2, for PWM duty-cycles > 50% as derived from following Erickson ’ s
method [2].
sizes. Additionally, reduced
IN
.
PWM
Programming the PWM Frequency and Maximum Duty-Cycle Clamp
The PWM frequency and maximum duty-cycle clamps for both GDx outputs of the UCC28070 are set through
the selection of the resistors connected to the RT and DMAX pins, respectively. The selection of the RT resistor
(R
) directly sets the PWM frequency (f
RT
Once R
where D
has been determined, the D
RT
is the desired maximum PWM duty-cycle.
MAX
MAX
PWM
).
resistor (R
) may be derived.
DMX
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