Texas Instruments UC184, UC284, UC384 User Manual

VIN
UC2843
VCC
VREF
RT/CT
GROUND COMP
VFB
ISENSE
OUTPUT
Copyright © 2016, Texas Instruments Incorporated
UC1842, UC2842, UC3842, UC1843, UC2843, UC3843 UC1844, UC2844, UC3844, UC1845, UC2845, UC3845
SLUS223G – APRIL 1997 – REVISED JULY 2022
UCx84x Current-Mode PWM Controllers

1 Features

Optimized for off-line and DC-to-DC converters
Low start-up current (< 1 mA)
Automatic feedforward compensation
Pulse-by-pulse current limiting
Enhanced load-response characteristics
Undervoltage lockout with hysteresis
High-current totem-pole output
Internally trimmed bandgap reference
Up to 500-kHz operation
Error amplifier with low output resistance

2 Applications

Switching regulators of any polarity
Transformer-coupled DC-DC converters

3 Description

The UCx84x series of control integrated circuits provide the features that are necessary to implement off-line or DC-to-DC fixed-frequency current-mode control schemes, with a minimum number of external components. The internally implemented circuits include an undervoltage lockout (UVLO), featuring a start-up current of less than 1 mA, and a precision reference trimmed for accuracy at the error amplifier input. Other internal circuits include logic to ensure latched operation, a pulse-width modulation (PWM) comparator that also provides current-limit control, and a totem-pole output stage that is designed to source or sink high-peak current. The output stage, suitable for driving N-channel MOSFETs, is low when it is in the off state.
The UCx84x family offers a variety of package options, temperature range options, choice of maximum duty cycle, and choice of turnon and turnoff thresholds and hysteresis ranges. Devices with higher turnon or turnoff hysteresis are ideal choices for off­line power supplies, while the devices with a narrower hysteresis range are suited for DC-DC applications. The UC184x devices are specified for operation from –55°C to 125°C, the UC284x series is specified for operation from –40°C to 85°C, and the UC384x series is specified for operation from 0°C to 70°C.
Device Information
PART NUMBER PACKAGE (PIN) BODY SIZE (NOM)
CDIP (8) 9.60 mm × 6.67 mm
UC184x
UC284x
UC384x
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
LCCC (20) 8.89 mm × 8.89 mm
CFP (8) 9.21 mm × 5.97 mm
SOIC (8) 4.90 mm × 3.91 mm
SOIC (14) 8.65 mm × 3.91 mm
PDIP (8) 9.81 mm × 6.35 mm
SOIC (8) 4.90 mm × 3.91 mm
SOIC (14) 8.65 mm × 3.91 mm
PDIP (8) 9.81 mm × 6.35 mm
CFP (8) 9.21 mm × 5.97 mm
(1)
Simplified Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
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SLUS223G – APRIL 1997 – REVISED JULY 2022

Table of Contents

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1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings........................................ 6
7.2 ESD Ratings............................................................... 6
7.3 Recommended Operating Conditions.........................6
7.4 Thermal Information....................................................6
7.5 Electrical Characteristics.............................................7
7.6 Typical Characteristics................................................9
8 Detailed Description...................................................... 11
8.1 Overview................................................................... 11
8.2 Functional Block Diagrams....................................... 11
8.3 Feature Description...................................................12
8.4 Device Functional Modes..........................................20
9 Application and Implementation.................................. 21
9.1 Application Information............................................. 21
9.2 Typical Application.................................................... 21
10 Power Supply Recommendations..............................34
11 Layout...........................................................................35
11.1 Layout Guidelines................................................... 35
11.2 Layout Example...................................................... 36
12 Device and Documentation Support..........................37
12.1 Receiving Notification of Documentation Updates..37
12.2 Support Resources................................................. 37
12.3 Trademarks.............................................................37
12.4 Electrostatic Discharge Caution..............................37
12.5 Glossary..................................................................37
13 Mechanical, Packaging, and Orderable
Information.................................................................... 37

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (April 2020) to Revision G (July 2022) Page
Updated the numbering format for tables, figures and cross-references throughout the document...................1
Changes from Revision E (January 2017) to Revision F (April 2020) Page
Changed UVLO Table updated ..........................................................................................................................7
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OUTPUT
VCC
VREF
GROUND
VFB
COMP
RT/CT
1
2
3
4
8
7
6
5
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
VC
PWRGND
COMP
NC
VFB
NC
NC
RT/CT
GROUND
OUTPUT
VREF
NC
9 10 11 12 13
3 2 1 20 19
18
17
16
15
14
4
5
6
7
8
VCC
VC
NC
OUTPUT
NC
NC
VFB
NC
NC
NC
RT/CT
NC
GROUND
NC
COMPNCVREF
NC
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5 Device Comparison Table

UVLO
TURNON AT 16 V
TURNOFF AT 10 V
SUITABLE FOR OFF-LINE
SUITABLE FOR DC-DC
APPLICATIONS
UC1842 UC1843 –55°C to 125°C
UC3842 UC3843 0°C to 70°C
UC1844 UC1845 –55°C to 125°C
UC3844 UC3845 0°C to 70°C

6 Pin Configuration and Functions

TURNON AT 8.4 V
TURNOFF AT 7.6 V
APPLICATIONS
UC1842, UC2842, UC3842, UC1843, UC2843, UC3843 UC1844, UC2844, UC3844, UC1845, UC2845, UC3845
SLUS223G – APRIL 1997 – REVISED JULY 2022
TEMPERATURE RANGE MAX DUTY CYCLE
Up to 100%UC2842 UC2843 –40°C to 85°C
Up to 50%UC2844 UC2845 –40°C to 85°C
Figure 6-1. D, JG, and P Packages 8-Pin SOIC,
CDIP, and PDIP Top View
Figure 6-3. FK Package 20-Pin LCCC Top View
NAME
COMP 1 1 2 O
Copyright © 2022 Texas Instruments Incorporated
PIN
SOIC,
CDIP,
PDIP
Product Folder Links: UC1842 UC2842 UC3842 UC1843 UC2843 UC3843 UC1844 UC2844 UC3844 UC1845
(8)
SOIC, CFP
(14)
LCCC
(20)
Figure 6-2. D and W Packages 14-Pin SOIC and
CFP Top View
Table 6-1. Pin Functions
TYPE DESCRIPTION
Error amplifier compensation pin. Connect external compensation components to this pin to modify the error amplifier output. The error amplifier is internally current-limited so the user can command zero duty cycle by externally forcing COMP to GROUND.
UC2845 UC3845
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3
OSC
=
1.72
RRT× C
CT
OUTPUT
= Qg× fSW
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Table 6-1. Pin Functions (continued)
PIN
SOIC,
NAME
CDIP,
PDIP
(8)
GROUND 5 9 13 G
PWRGND 8 12 G
ISENSE 3 5 7 I
NC 2, 4, 6, 13
OUTPUT 6 10 15 O
RT/CT 4 7 10 I/O
SOIC, CFP
(14)
LCCC
(20)
1, 3, 4, 6,
8, 9, 11,
14, 16, 19
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TYPE DESCRIPTION
Analog ground. For device packages without PWRGND, GROUND functions as both power ground and analog ground.
Power ground. For device packages without PWRGND, GROUND functions as both power ground and analog ground
Primary-side current sense pin. Connect to current sensing resistor. The PWM uses this signal to terminate the OUTPUT switch conduction. A voltage ramp can be applied to this pin to run the device with a voltage-mode control configuration.
Do not connect
OUTPUT is the gate drive for the external MOSFET. OUTPUT is the output of the on-chip driver stage intended to directly drive a MOSFET. Peak currents of up to 1 A are sourced and sunk by this pin. OUTPUT is actively held low when VCC is below the turnon threshold.
Fixed frequency oscillator set point. Connect timing resistor, RRT, to VREF and timing capacitor, CCT, to GROUND from this pin to set the switching frequency. For best performance, keep the timing capacitor lead to the device GROUND as short and direct as possible. If possible, use separate ground traces for the timing capacitor and all other functions.
The frequency of the oscillator can be estimated with the following
equations:
VC 11 17 I
VCC 7 12 18 I
VFB 2 3 5 I
(1)
where f
use a timing resistor less than 5 kΩ. The frequency of the OUTPUT
gate drive of the UCx842 and UCx843, fSW, is equal to f
100% duty cycle; the frequency of the UCx844 and UCx845 is equal
to half of the f
Bias supply input for the output gate drive. For PWM controllers that do not have this pin, the gate driver is biased from the VCC pin. VC must have a bypass capacitor at least 10 times greater than the gate capacitance of the main switching FET used in the design.
Analog controller bias input that provides power to the device. Total VCC current is the sum of the quiescent VCC current and the average OUTPUT current. Knowing the switching frequency and the MOSFET gate charge, Qg, the average OUTPUT current can be calculated from:
is in Hertz, RRT is in Ohms and CCT is in Farads. Never
OSC
OSC
frequency at up to 50% duty cycle.
OSC
at up to
(2)
A bypass capacitor, typically 0.1 µF, connected directly to GROUND
with minimal trace length, is required on this pin. An additional
bypass capacitor at least 10 times greater than the gate capacitance
of the main switching FET used in the design is also required on
VCC.
Inverting input to the internal error amplifier. VFB is used to control the power converter voltage-feedback loop for stability.
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Table 6-1. Pin Functions (continued)
PIN
SOIC,
NAME
VREF 8 14 20 O
CDIP,
PDIP
(8)
SOIC, CFP
(14)
LCCC
(20)
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TYPE DESCRIPTION
5-V reference voltage. VREF is used to provide charging current to the oscillator timing capacitor through the timing resistor. It is important for reference stability that VREF is bypassed to GROUND with a ceramic capacitor connected as close to the pin as possible. A minimum value of 0.1-µF ceramic is required. Additional VREF bypassing is required for external loads on VREF.
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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
V
VCC
V
and V
VFB
V
VC
I
OUTPUT
I
COMP
E
OUTPUT
T
J
T
stg
ISENSE
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Section 7.3. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Low impedance source 30 V
I
< 30 mA Self Limiting
VCC
Analog input voltage –0.3 6.3 V
Input Voltage, Q and D Package only 30 V
Output drive current ±1 A
Error amplifier output sink current 10 mA
Output energy (capacitive load) 5 µJ
Junction temperature 150 °C
Storage temperature –65 150 °C

7.2 ESD Ratings

(1)
MIN MAX UNIT
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins
(1)
±3000
(2)
±3000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
V
and VVC
VCC
V
VFB
V
ISENSE
I
VCC
I
OUTPUT
I
VREF
f
OSC
T
A
(1) These recommended voltages for VC and POWER GROUND apply only to the D package.
(1)
Supply voltage 12 28 V
Input voltage 2.5 V
Input voltage 1 V
Supply current, externally limited 25 mA
Average output current 200 mA
Reference output current –20 mA
Oscillator frequency 100 500 kHz
UC184x –55 125
Operating free-air temperature
UC384x 0 70

7.4 Thermal Information

UCx84x
(1)
8 PINS 14 PINS 8 PINS 20 PINS
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
THERMAL METRIC
Junction-to-ambient thermal resistance 104.8 78.2 53.7 °C/W
Junction-to-case (top) thermal resistance 47.3 37.1 46.7 36.2 °C/W
Junction-to-board thermal resistance 45.9 32.6 31 35.4 °C/W
Junction-to-top characterization parameter 8.2 7.3 17.1 °C/W
Junction-to-bottom characterization parameter 45.2 32.4 30.9 °C/W
V
°CUC284x –40 85
UNITD (SOIC) D (SOIC) P (PDIP) FK (LCCC)
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7.4 Thermal Information (continued)
UCx84x
THERMAL METRIC
(1)
UNITD (SOIC) D (SOIC) P (PDIP) FK (LCCC)
8 PINS 14 PINS 8 PINS 20 PINS
R
θJC(bottom)
Junction-to-case (bottom) thermal resistance 4.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted) –55°C ≤ TA ≤ 125°C for the UC184x; –40°C ≤ TA ≤ 85°C for the UC284x, 0°C ≤ TA ≤ 70°C for the UC384x, V
VCC
from VREF to GROUND, RRT = 10 kΩ; CCT = 3.3 nF, TJ = TA.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REFERENCE SECTION
V
VREF
OSCILLATOR SECTION
f
OSC
V
RT/CT
ERROR AMPLIFIER SECTION
V
VFB
I
VFB
A
VOL
PSRR Power supply rejection ratio 12 ≤ VCC ≤ 25 V 60 70 dB
I
(snk)
I
(src)
V
COMP
High
V
COMP
CURRENT SENSE SECTION
Reference voltage I
= 1 mA, TJ = 25°C
VREF
Line regulation 12 ≤ VCC ≤ 25 V 6 20 mV
Load regulation 1 ≤ I
Temperature stability See
≤ 20 mA 6 25 mV
VREF
(1) (3)
Total output variation Line, load, temperature
Output noise voltage 10 Hz ≤ f
≤ 10 kHz,
OSC
Long term stability TA = 125°C, 1000 Hrs
Output short circuit –30 –100 –180 mA
Initial accuracy TJ = 25°C
(5)
Voltage stability 12 ≤ VCC ≤ 25 V 0.2% 1%
Temperature stability T
Amplitude Peak-to-peak
Input voltage V
≤ TA ≤ T
MIN
COMP
MAX
(1)
= 2.5 V
Input bias current
Unity gain bandwidth TJ = 25°C
COMP sink current V
COMP source current V
High-level output voltage V
Low Low-level output voltage V
2 ≤ V
VFB
VFB
VFB
VFB
≤ 4 V 65 90 dB
COMP
(1)
= 2.7 V, V
= 2.3 V, V
= 2.3 V, RL = 15-kΩ COMP to GROUND 5 6
= 2.7 V, RL = 15-kΩ COMP to VREF 0.7 1.1
(2)
= 15 V
; 0.1 µF capacitor from VCC to GROUND, 0.1 µF capacitor
UC184x and
4.95 5 5.05
UC284x
UC384x 4.9 5 5.1
UC184x
(1)
and UC284x
4.9 5.1
UC384x 4.82 5.18
(1)
TJ = 25°C 50 μV
(1)
47 52 57 kHz
(1)
UC184x and
2.45 2.5 2.55
UC284x
UC384x 2.42 2.5 2.58
UC184x and UC284x
UC384x –2
0.7 1 MHz
= 1.1 V 2 6
COMP
= 5 V –0.5 –0.8
COMP
V
0.2 0.4 mV/°C
V
5 25 mV
5%
1.7 V
V
–1
µA
mA
V
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VREF
:
max
;
F VREF
:
min
;
T
J:max
;
F T
J:min
;
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7.5 Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted) –55°C ≤ TA ≤ 125°C for the UC184x; –40°C ≤ TA ≤ 85°C for the UC284x, 0°C ≤ TA ≤ 70°C for the UC384x, V
VCC
from VREF to GROUND, RRT = 10 kΩ; CCT = 3.3 nF, TJ = TA.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
A
CS
V
ISENSE
Gain See
Maximum input signal V
PSRR Power supply rejection ratio 12 V ≤ V
I
ISENSE
t
DLY
Input bias current –2 –10 µA
Delay to output V
OUTPUT SECTION
V
Low Low-level OUTPUT voltage
OUT
V
High High-level OUTPUT voltage
OUT
t
RISE
t
FALL
Rise time
Fall time
(1)
(1)
UNDERVOLTAGE LOCKOUT (UVLO)
VCC
VCC
Enable threshold
ON
UVLO off threshold
OFF
PWM
D
MAX
D
MIN
Maximum duty cycle
Minimum duty cycle 0%
TOTAL STANDBY CURRENT
I
VCC
I
VCC
Start-up current 0.5 1
Operating supply current V
VCC Zener voltage I
(4) (6)
(4)
= 5 V
COMP
≤ 25 V
VCC
stepped from 0 V to 2 V
ISENSE
I
= 20 mA 0.1 0.4
SINK
I
= 200 mA 1.5 2.2
SINK
I
= 20 mA 13 13.5
SOURCE
I
= 200 mA 12 13.5
SOURCE
C
C
= 1 nF, TJ = 25°C 50 150 ns
OUTPUT
= 1 nF, TJ = 25°C, 50 150 ns
OUTPUT
UC1842/4 and UC2842/4 15 16 17
UCx843/5 7.8 8.4 9
UC1842/4 and UC2842/4 9 10 11
UCx843/5 7 7.6 8.2
UCx842/3 95% 97% 100%
UC1844/5 and UC2844/5 46% 48% 50%
UC3844/5 47% 48% 50%
= V
VFB
ISENSE
= 25 mA 30 34 V
VCC
(2)
= 15 V
; 0.1 µF capacitor from VCC to GROUND, 0.1 µF capacitor
2.85 3 3.15 V/V
0.9 1 1.1 V
(1) (4)
(1)
70 dB
150 300 ns
= 0 V 11 17
V
V
VUC3842/4 14.5 16 17.5
VUC3842/4 8.5 10 11.5
mA
(1) Specified by design. Not production tested. (2) Adjust VCC above the start threshold before setting at 15 V (3) Temperature stability, sometimes referred to as average temperature coefficient, is described by the equation:
VREF
and VREF
min
are the maximum and minimum reference voltages measured over the
max
appropriate temperature range. Note that the extremes in voltage do not necessarily occur at the extremes in temperature. (4) Parameter measured at trip point of latch with VFB = 0 V. (5) OUTPUT switching frequency, fSW, equals the oscillator frequency, f
fSW, is one half oscillator frequency, f (6) Gain defined as: A = ΔV
COMP
/ΔV
, for the UCx844 and UCx845.
OSC
, 0 V ≤ V
ISENSE
ISENSE
≤ 0.8 V.
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OSC
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Temperature (C)
I
DISCHARGE
(mA)
-75 -50 -25 0 25 50 75 100 125 150
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
9.2
D001
VO, Error Amp Output Voltage (V)
V
TH
, Current Sense Input Threshold (V)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
D005
TA = 125qC TA = 25qC TA = 55qC
Freq (Hz)
Gain (dB)
10 100 1000 10000 100000 1000000 1E+7
-20 -100
0 -50
20 0
40 50
60 100
80 150
100 200
D003
Gain Phase
IO, Output Load Current (mA)
Source Saturation Voltage (V)
Sink Saturation Voltage (V)
0 100 200 300 400 500 600 700 800
-10 0
-9 1
-8 2
-7 3
-6 4
-5 5
-4 6
-3 7
-2 8
-1 9
0 10
D005
Source Saturation at 25 C Source Saturation at -55 C Sink Saturation at -55 C Sink Saturation at 25 C
Temperature (C)
I
SC
(mA)
-75 -50 -25 0 25 50 75 100 125 150
40
60
80
100
120
140
160
180
D006
Source Current (mA)
Reference Voltage Delta (mV)
0 20 40 60 80 100 120 140 160
-60
-50
-40
-30
-20
-10
0
D007
Ta = 125 C Ta = 25 C Ta = -40 C
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7.6 Typical Characteristics

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Figure 7-1. Oscillator Discharge Current vs Temperature for
VCC = 15 V and V
OSC
= 2 V
Figure 7-3. Error Amplifier Open-Loop Gain and Phase vs
Frequency, VCC = 15 V, RL = 100 kΩ, and TA = 25 °C
Figure 7-2. Current Sense Input Threshold vs Error Amplifier
Output Voltage for VCC = 15 V
Figure 7-4. OUTPUT Saturation Voltage vs Load Current for
VCC = 15 V with 5-ms Input Pulses
Figure 7-5. VREF Short-Circuit Current vs Temperature for VCC
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= 15 V
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Figure 7-6. VREF Voltage vs Source Current
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Temperature (C)
V
REF
(V)
-75 -50 -25 0 25 50 75 100 125 150
4.8
4.85
4.9
4.95
5
5.05
5.1
5.15
5.2
D008
0
4
Saturation Voltage (V)
Output Current (A)
0.01 0.1 1
1
2
3
Source, TA = 25°C
Sink, TA = 25°C
Source, TA = ±55°C
Sink, TA = ±55°C
CCT (nF)
t
DEADTIME
(Ps)
1 5 10 50 100
0.3
0.5
1
5
10
3030
D006
100
20
2
1
1 M
Frequency (Hz)
100 k
Timing Resistance ()
10 k
100 1000
10
50
5
C
CT
(nF)
100 47 22 10
4.7
2.2 1
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7.6 Typical Characteristics (continued)
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Figure 7-7. VREF Voltage vs Temperature
Figure 7-9. Dead Time vs Timing Capacitance, C
Figure 7-8. Output Saturation
CT
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Figure 7-10. Timing Resistance, RRT, vs Frequency
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UCx842 UCx843
34 V
5-V
Reference
EN
VREF Good
Logic
Internal
Bias
UVLO
Osc
S
R
PWM Latch
R 1 V
+ E/A
VCC
RT/CT
VFB
COMP
ISENSE
PWM
Comparator
VREF
OUTPUT
VC
PWRGND
2R
2.5 V
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8 Detailed Description

8.1 Overview

The UCx84x series of control integrated circuits provide the features necessary to implement AC-DC or DC-to­DC fixed-frequency current-mode control schemes with a minimum number of external components. Protection circuitry includes undervoltage lockout (UVLO) and current limiting. Internally implemented circuits include a start-up current of less than 1 mA, a precision reference trimmed for accuracy at the error amplifier input, logic to ensure latched operation, a pulse-width modulation (PWM) comparator that also provides current-limit control, and a totem-pole output stage designed to source or sink high-peak current. The output stage, suitable for driving N-channel MOSFETs, is low when it is in the off-state.
Major differences between members of these series are the UVLO thresholds, acceptable ambient temperature range, and maximum duty-cycle. Typical UVLO thresholds of 16 V (ON) and 10 V (OFF) on the UCx842 and UCx844 devices make them ideally suited to off-line AC-DC applications. The corresponding typical thresholds for the UCx843 and UCx845 devices are 8.4 V (ON) and 7.6 V (OFF), making them ideal for use with regulated input voltages used in DC-DC applications. The UCx842 and UCx843 devices operate to duty cycles approaching 100%. The UCx844 and UCx845 obtain a duty-cycle range of 0% to 50% by the addition of an internal toggle flip-flop, which blanks the output off every other clock cycle.
The UC184x-series devices are characterized for operation from –55°C to 125°C. UC284x-series devices are characterized for operation from −40°C to 85°C. The UC384x devices are characterized for operation from 0°C to 70°C.

8.2 Functional Block Diagrams

Figure 8-1. UCx842 and UCx843 Block Diagram, No Toggle
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34 V
5-V
Reference
EN
VREF Good
Logic
Internal
Bias
UVLO
Osc
S
R
PWM Latch
R 1 V
+ E/A
VCC
RT/CT
VFB
COMP
ISENSE
PWM
Comparator
VREF
OUTPUT
VC
PWRGND
UCx844 UCx845
2R
T
2.5 V
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Figure 8-2. UCx844 and UCx845 Block Diagram, Toggle

8.3 Feature Description

8.3.1 Detailed Pin Description

8.3.1.1 COMP
The error amplifier in the UCx84x family is an open collector in parallel with a current source, with a unity-gain bandwidth of 1 MHz. The COMP terminal can both source and sink current. The error amplifier is internally current-limited, so that one can command zero duty cycle by externally forcing COMP to GROUND.
8.3.1.2 VFB
VFB is the inverting input of the error amplifier. VFB is used to control the power converter voltage-feedback loop for stability. For best stability, keep VFB lead length as short as possible and VFB stray capacitance as small as possible.
8.3.1.3 ISENSE
The UCx84x current sense input connects to the PWM comparator. Connect ISENSE to the MOSFET source current sense resistor. The PWM uses this signal to terminate the OUTPUT switch conduction. A voltage ramp can be applied to this pin to run the device with a voltage mode control configuration or to add slope compensation. To prevent false triggering due to leading edge noises, an RC current sense filter may be required. The gain of the current sense amplifier is typically 3 V/V.
8.3.1.4 RT/CT
RT/CT is the oscillator timing pin. For fixed frequency operation, set the timing capacitor charging current by connecting a resistor from VREF to RT/CT. Set the frequency by connecting timing capacitor from RT/CT to GROUND. For the best performance, keep the timing capacitor lead to GROUND as short and direct as possible. If possible, use separate ground traces for the timing capacitor and all other functions.
The UCx84x’s oscillator allows for operation to 500 kHz. The device uses an external resistor to set the charging current for the external capacitor, which determines the oscillator frequency. The recommended range of timing
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OSC
=
1.72
RRT× C
CT
OUTPUT
= Qg× fSW
VCC:max
;
=
V
IN:min
;
F V
VCC:max
;
I
VCC
+ kQg× fSWo
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resistor values is between 5 kΩ and 100 kΩ; the recommended range of timing capacitor values is between 1 nF and 100 nF.
(3)
In this equation, the switching frequency, fSW is in Hz, RRT is in Ω, and CCT is in Farads.
8.3.1.5 GROUND
GROUND is the signal and power returning ground. TI recommends separating the signal return path and the high current gate driver path so that the signal is not affected by the switching current.
8.3.1.6 OUTPUT
The high-current bipolar totem-pole output of the UCx84x devices sinks or sources up to 1-A peak of current. The OUTPUT pin can directly drive a MOSFET. The OUTPUT of the UCx842 and UCx843 devices switches at the same frequency as the oscillator and can operate near 100% duty cycle. In the UCx844 and UCx845 devices, the switching frequency of OUTPUT is one-half that of the oscillator due to an internal T flipflop. This limits the maximum duty cycle in the UCx844 and UCx845 to < 50%. Schottky diodes may be necessary on the OUTPUT pin to prevent overshoot and undershoot due to high impedance to the supply rail and to ground, respectively. A bleeder resistor, placed between the gate and the source of the MOSFET, should be used to prevent activating the power switch with extraneous leakage currents during undervoltage lockout. An external clamp circuit may be necessary to prevent overvoltage stress on the MOSFET gate when VCC exceeds the gate voltage rating.
8.3.1.7 VCC
VCC is the power input connection for this device. In normal operation, power VCC through a current-limiting resistor. Although quiescent VCC current is only 0.5 mA, the total supply current is higher, depending on the OUTPUT current. Total VCC current is the sum of quiescent VCC current and the average OUTPUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUTPUT current can be calculated from Equation 4.
(4)
The UCx84x has a VCC supply voltage clamp of 34 V typical, but the absolute maximum value for VCC from a low-impedance source is 30 V. For applications that have a higher input voltage than the recommended VCC voltage, place a resistor in series with VCC to increase the source impedance. The maximum value of this resistor is calculated with Equation 5.
(5)
In Equation 5, V voltage and I
VCC
is the minimum voltage that is used to supply VCC, V
IN(min)
VCC(max)
is the maximum VCC clamp
is the IC supply current without considering the gate driver current and Qg is the external power
MOSFET gate charge and fSW is the switching frequency.
The turnon and turnoff thresholds for the UCx84x family are significantly different: 16 V and 10 V for the UCx842 and UCx844; 8.4 V and 7.6 V for the UCx843 and UCx855. To ensure against noise related problems, filter VCC with an electrolytic and bypass with a ceramic capacitor to ground. Keep the capacitors close to the IC pins.
8.3.1.8 VREF
VREF is the voltage reference for the error amplifier and also for many other internal circuits in the IC. The high-speed switching logic uses VREF as the logic power supply. The 5-V reference tolerance is ±2% for the UCx84x family. The output short-circuit current is 30 mA. For reference stability and to prevent noise problems with high-speed switching transients, bypass VREF to ground with a ceramic capacitor close to the IC package.
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SENSE
=
V
ISENSE
R
CS
ISENSE
GROUND
COMP
2 R
R
C
CSF
R
CSF
R
CS
PWM Comparator
1 V
Error Amplifier
I
SENSE
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A minimum of 0.1-µF ceramic capacitor is required. Additional VREF bypassing is required for external loads on the reference. An electrolytic capacitor may also be used in addition to the ceramic capacitor.
When VCC is greater than 1 V and less than the UVLO threshold, a 5-kΩ resistor pulls VREF to ground. VREF can be used as a logic output indicating power-system status because when VCC is lower than the UVLO threshold, VREF is held low.

8.3.2 Pulse-by-Pulse Current Limiting

Pulse-by-pulse limiting is inherent in the current mode control scheme. An upper limit on the peak current can be established by simply clamping the error voltage. Accurate current limiting allows optimization of magnetic and power semiconductor elements while ensuring reliable supply operation.

8.3.3 Current-Sense

An external series resistor, RCS, senses the current and converts this current into a voltage that becomes the input to the ISENSE pin. The ISENSE pin is the noninverting input to the PWM comparator. The ISENSE input is compared to a signal proportional to the error amplifier output voltage; the gain of the current sense amplifier is typically 3 V/V. The peak I
current is determined by Equation 6:
SENSE
(6)
The typical value for V
ISENSE
CSF
and C
, may be required to suppress switch
CSF
transients caused by the reverse recovery of a secondary side diode or equivalent capacitive loading in addition to parasitic circuit impedances. The time constant of this filter should be considerably less than the switching period of the converter.
Figure 8-3. Current-Sense Circuit Schematic

8.3.4 Error Amplifier With Low Output Resistance

The error amplifier output is an open collector in parallel with a current source. With a low output resistance, various impedance networks may be used on the compensation pin input for error amplifier feedback. The error amplifier output, COMP, is frequently used as a control port for secondary-side regulation by using an external secondary-side adjustable voltage regulator, such as a TL431, to send an error signal across the secondary-to-primary isolation boundary through an opto-isolator, in this configuration connect the COMP pin directly to the opto-isolator feedback. On the primary side, the inverting input to the UCx48x error amplifier, VFB, should be connected to GROUND. With VFB tied to GROUND, the error amplifier output, COMP, is forced to its
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ISENSE
COMP
2 R
R
PWM Comparator
1 V
Error Amplifier
2.5 V
VFB
0.5 mA
+
s
Z
I
Z
F
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high state and sources current, typically 0.8 mA. The opto-isolator must overcome the source current capability to control the COMP pin below the error amplifier output high level, VOH.
For primary-side regulation, configure the inverting input to the error amplifier, VFB, with a resistor divider to provide a signal that is proportional to the converter output voltage being regulated. Add the voltage loop compensation components between VFB and COMP. The internal noninverting input to the error amplifier is trimmed to 2.5 V. For best stability, keep VFB lead length as short as possible and minimize the stray capacitance on VFB.
The internal resistor divider on COMP is maintained at an R:2R ratio, the specific values of these internal resistors should not be critical in any application.
Error amplifier can source or sink up to 0.5 mA.
Figure 8-4. Error-Amplifier Configuration Schematic

8.3.5 Undervoltage Lockout

The UCx84x devices feature undervoltage lockout protection circuits for controlled operation during power-up and power-down sequences. The UVLO circuit insures that VCC is adequate to make the UCx84x fully operational before enabling the output stage. Undervoltage lockout thresholds for the UCx842, UCx843, UCx844, and UCx845 devices are optimized for two groups of applications: off-line power supplies and DC-DC converters. The 6-V hysteresis in the UCx842 and UCx844 devices prevents VCC oscillations during power sequencing. This wider VCCON to VCC applications. The UCx843 and UCx845 controllers have a much narrower VCCON to VCC
range, make these devices ideally suited to off-line AC input
OFF
hysteresis and
OFF
may be used in DC to DC applications where the input is considered regulated.
Start-up current is less than 1 mA for efficient bootstrapping from the rectified input of an off-line converter, as illustrated by Figure 8-7. During normal circuit operation, VCC is developed from auxiliary winding NA with D and C R
START
R
START
During UVLO the IC draws less than 1 mA of supply current. Once crossing the turnon threshold the IC supply current increases to a maximum of 17 mA, typically 11 mA, During undervoltage lockout, the output driver is biased to a high impedance state and sinks minor amounts of current. A bleeder resistor, placed between the gate and the source of the MOSFET should be used to prevent activating the power switch with extraneous leakage currents during undervoltage lockout.
. At start-up, however, C
VCC
can be as large as 100 kΩ and still charge C
must be charged to 16 V through R
VCC
when VAC = 90 V RMS (low line). Power dissipation in
VCC
. With a start-up current of 1 mA,
START
would then be less than 350 mW even under high line (VAC= 130 V RMS) conditions.
BIAS
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15
V
ON
(V)
V
OFF
(V)
16
UCx842 UCx844
UCx843 UCx845
10
8.4
7.6
7VCC
ON/OFF Command
to rest of device
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< 1 mA
V
OFF
V
ON
V
VCC
I
VCC
AC
C
IN
R
START
C
VCC
VCC
OUTPUT
GROUND
0.1 PF
I
VCC
•1mA
D
BIAS
R
CS
N
P
N
A
N
S
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Figure 8-5. UVLO Threshold
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Figure 8-6. UVLO ON and OFF Profile
Figure 8-7. Providing Power to UCx84x

8.3.6 Oscillator

The oscillator allows for up to 500-kHz switching frequency. The OUTPUT gate drive is the same frequency as the oscillator in the UCx842 and UCx843 devices and can operate near 100% duty cycle. In the UCx844 and UCx845 devices, the frequency of OUTPUT is one-half that of the oscillator due to an internal T flipflop that blanks the output off every other clock cycle, resulting in a maximum duty cycle for these devices of < 50% of the switching frequency. An external resistor, RRT, connected from VREF to RT/CT sets the charging current for the timing capacitor, CCT, which is connected from RT/CT to GROUND. An RRT value greater than 5 kΩ is recommended on RT/CT to set the positive ramp time of the internal oscillator. Using a value of 5 kΩ or greater for RRT maintains a favorable ratio between the internal impedance and the external oscillator set resistor and results in minimal change in frequency over temperature. Using a value of less the recommended minimum value may result in frequency drift over temperature, part tolerances, or process variations.
The peak-to-peak amplitude of the oscillator waveform is 1.7 V in UCx84x devices. The UCx842 and UCx843 have a maximum duty cycle of approximately 100%, whereas the UCx844 and UCx845 are clamped to 50% maximum by an internal toggle flip flop. This duty cycle clamp is advantageous in most flyback and forward
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converters. For optimum IC performance the dead-time should not exceed 15% of the oscillator clock period. The discharge current, typically 6 mA at room temperature, sets the dead time, see Figure 7-9. During the discharge, or dead time, the internal clock signal blanks the output to the low state. This limits the maximum duty cycle D
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to:
MAX
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MAX
= 1 F:t
DEADTIME
× f
OSC
;
MAX
= 1 F
l
t
DEADTIME
×
f
OSC
2
p
R
RT
C
CT
VREF
RT/CT
GROUND
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OSC
=
1.72
RRT× C
CT
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(7)
Equation 8 applies to UCx842 and UCx843 units because the OUTPUT switches at the same frequency as the
oscillator and the maximum duty cycle can be as high as 100%.
(8)
Equation 8 applies to UCx844 and UCx845 units because the OUTPUT switches at half the frequency as the
oscillator and the maximum duty cycle can be as high as 50%.
When the power transistor turns off, a noise spike is coupled to the oscillator RT/CT terminal. At high duty cycles, the voltage at RT/CT is approaching its threshold level (approximately 2.7 V, established by the internal oscillator circuit) when this spike occurs. A spike of sufficient amplitude prematurely trips the oscillator. To minimize the noise spike, choose CCT as large as possible, remembering that dead time increases with CCT. It is recommended that CCT never be less than approximately 1000 pF. Often the noise which causes this problem is caused by the OUTPUT being pulled below ground at turnoff by external parasitics. This is particularly true when driving MOSFETs. A Schottky diode clamp from GROUND to OUTPUT prevents such output noise from feeding to the oscillator.
For RRT > 5 kΩ:

8.3.7 Synchronization

The simplest method to force synchronization uses the timing capacitor, CCT, in near standard configuration. Rather than bring CCT to ground directly, a small resistor is placed in series with CCT to ground. This resistor serves as the input for the sync pulse which raises the CCT voltage above the oscillator’s internal upper threshold. The PWM is allowed to run at the frequency set by RRT and CCT until the sync pulse appears. This scheme offers several advantages including having the local ramp available for slope compensation. The UC3842/3/4/5 oscillator must be set to a lower frequency than the sync pulse stream, typically 20% with a 0.5-V pulse applied across the resistor.
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Figure 8-8. Oscillator Section Schematic
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R
RT
C
CT
VREF
RT/CT
GROUND
24 O
SYNC
VREF
ISENSE
30 O
500 O
1 kO
To Current
Sense Resistor
COMP
SHUTDOWN
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Figure 8-9. Synchronizing the Oscillator

8.3.8 Shutdown Technique

The PWM controller (see Figure 8-10) can be shut down by two methods: either raise the voltage at ISENSE above 1 V or pull the COMP terminal below a voltage two diode drops above ground. Either method causes the output of the PWM comparator to be high (see Figure 8-10). The PWM latch is reset dominant so that the output remains low until the next clock cycle after the shutdown condition at the COMP or ISENSE terminal is removed. In one example, an externally latched shutdown can be accomplished by adding an SCR that resets by cycling VCC below the lower UVLO threshold. At this point, the reference turns off, allowing the SCR to reset.
Figure 8-10. Shutdown Techniques

8.3.9 Slope Compensation

A fraction of the oscillator ramp can be summed resistively with the current-sense signal to provide slope compensation for converters requiring duty cycles over 50% (see Figure 8-11). Note that capacitor C filter with R
to suppress the leading-edge switch spikes.
CSF
forms a
CSF
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C
CT
VREF
RT/CT
ISENSE
UCx842 UCx843
0.1 µF
R
RT
R
RAMP
C
CSF
R
CSF
R
CS
I
SENSE
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VREF
COMP
C
SS
R
SS
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Figure 8-11. Slope Compensation

8.3.10 Soft Start

Upon power up, it is desirable to gradually widen the PWM pulse width starting at zero duty cycle. The UCx84x devices do not have internal soft-start control, but this can be easily implemented externally with three components. An R/C network is used to provide the time constant to control the error amplifier output. A transistor is also used to isolate the components from the normal operation of either node. It also minimizes the loading effects on the RT/CT time constant by amplification through the transistors gain.
Figure 8-12. Soft-Start Circuitry

8.3.11 Voltage Mode

In duty cycle control (voltage mode), pulse width modulation is attained by comparing the error amplifier output to an artificial ramp. The oscillator timing capacitor CCT is used to generate a sawtooth waveform on both current or voltage mode ICs. To use the UCx84x in a voltage mode configuration, this sawtooth waveform will be input to the current sense input, ISENSE, for comparison to the error voltage at the PWM comparator. This sawtooth is used to determine pulse width instead of the actual primary current in this method. Loop compensation is similar to that of voltage mode controllers with subtle differences due to the low output resistance voltage amplifier in the UCx84x as opposed to a transconductance (current) type amplifier used in traditional voltage
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VREF
RT/CT
C
CT
1N4148
2N2907
1 k
2.7 k
ISENSE
2N2222
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mode controllers. For further reference on topologies and compensation, consult Closing the Feedback Loop (SLUP068).
Figure 8-13. Current Mode PWM Used as a Voltage Mode PWM

8.4 Device Functional Modes

8.4.1 Normal Operation

During normal operating mode, the IC can be used in peak current mode or voltage mode control. When the converter is operating in peak current mode, the controller regulates the converter's peak current and duty cycle. When the IC is used in voltage mode control, the controller regulates the power converter's duty cycle. The regulation of the system's peak current and duty cycle can be achieved with the use of the integrated error amplifier and external feedback circuitry.

8.4.2 UVLO Mode

During the system start-up, VCC voltage starts to rise from 0 V. Before the VCC voltage reaches its corresponding turn on threshold, the IC is operating in UVLO mode. In this mode, the VREF pin voltage is not generated. When VCC is above 1 V and below the turnon threshold, the VREF pin is actively pulled low through a 5-kΩ resistor. This way, VREF can be used as a logic signal to indicate UVLO mode. If the bias voltage to VCC drops below the UVLO-off threshold, PWM switching stops and VREF returns to 0 V. The device can be restarted by applying a voltage greater than the UVLO-on threshold to the VCC pin.
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UC2845 UC3845
COMP
VFB
UCx842
ISENSE
RT/CT
1
2
3
4
VREF
VCC
OUTPUT
GROUND
8
7
6
5
0.1 PF
R1
C
RTCT
100 NŸ
5
I
SENSE
Adjust
1
E/A Adjust
4.7
4.7
0.1 PF
GROUND
1 NŸ
OUTPUT
VREF
VCC
Copyright © 2016, Texas Instruments Incorporated
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9 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality.

9.1 Application Information

The UCx84x controllers are peak current mode pulse width modulators. These controllers have an onboard amplifier and can be used in isolated and non-isolated power supply design. There is an onboard totem pole gate driver capable of delivering 1 A of peak current. This is a high-speed PWM capable of operating at switching frequencies up to 500 kHz.

9.1.1 Open-Loop Test Fixture

The following application is an open-loop laboratory test fixture. This circuit demonstrates the setup and use of the UCx84x devices and their internal circuitry.
In the open-loop laboratory test fixture (see Figure 9-1), high peak currents associated with loads necessitate careful grounding techniques. Timing and bypass capacitors should be connected close to the GROUND terminal in a single-point ground. The transistor and 5-kΩ potentiometer sample the oscillator waveform and apply an adjustable ramp to the ISENSE terminal.
Figure 9-1. Open-Loop Laboratory Test Fixture

9.2 Typical Application

A typical application for the UC2842 in an off-line flyback converter is shown in Figure 9-2. The UC2842 uses an inner current control loop that contains a small current sense resistor which senses the primary inductor current ramp. This current sense resistor transforms the inductor current waveform to a voltage signal that is input directly into the primary side PWM comparator. This inner loop determines the response to input voltage changes. An outer voltage control loop involves comparing a portion of the output voltage to a reference voltage at the input of an error amplifier. When used in an off-line isolated application, the voltage feedback of the
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VIN = 85 VAC
to 265 VAC
D
BRIDGE
~
~
+
±
C
IN
180 µF
R
SNUB
50 k
C
SNUB
10 nF
N
P
N
S
N
A
D
CLAMP
LP =1.5 mH
NP:NS = 10 NP:NA = 10
C
OUT
2200 µF
V
OUT
12 V, 4 A
D
OUT
R
VCC
22
D
BIAS
1
2
3
4
COMP
VFB
ISENSE
RT/CT 5
6
7
8
GROUND
OUTPUT
VCC
VREF
UC2842
R
BLEEDER
10 k
C
VREF
1 µF
C
VCC
120 µF
R
START
100 k
R
G
10
R
CS
0.75
C
SS
SS
C
CSF
100 pF
R
CSF
4.2 k
R
P
Not Populated
Q
SW
TL431
R
FBU
9.53 k
R
FBB
2.49 k
C
COMPz
0.01 µF
R
COMPz
88.7 k
10 V
C
COMPp
10 nF
R
FBG
4.99 k
R
LED
1.3 k
R
OPTO
1 k
OPTO-
COUPLER
R
TLbias
1 k
C
VCCbp
0.1 µF
C
RAMP
10 nF
R
RAMP
24.9 k
R
RT
15.4 k
C
CT
1000 pF
R
COMPp
10 k
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isolated output is accomplished using a secondary-side error amplifier and adjustable voltage reference, such as the TL431. The error signal crosses the primary to secondary isolation boundary using an opto-isolator whose collector is connected to the VREF pin and the emitter is connected to VFB. The outer voltage control loop determines the response to load changes.

9.2.1 Design Requirements

Table 9-1 illustrates a typical set of performance requirements for an off-line flyback converter capable of
providing 48 W at 12-V output voltage from a universal AC input. The design uses peak primary current control in a continuous current mode PWM converter.
PARAMETER TEST CONDITIONS MIN NOM MAX UNIT
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V
IN
f
LINE
V
OUT
V
RIPPLE
I
OUT
f
SW
η Efficiency 85%
Input Voltage 85 115/230 265 V
Line Frequency 47 50/60 63 Hz
Output Voltage I
Output Ripple Voltage
Output Current 0 4 A
Switching Frequency
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Figure 9-2. Typical Application Design Example Schematic
OUT(min)
Table 9-1. Performance Requirements
≤ I
≤ I
OUT
OUT(max)
I
≤ I
OUT
≤ I
OUT(max)
OUT(min)
11.75 12 12.25 V
100 mVpp
100 kHz
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RMS
UC2845 UC3845
IN
=
2 × P
IN
× F0.25 +
1
N
× arcsin F
V
BULK (min )
¾
2
× V
IN (min )
GG
k2 × V
IN(min )
2
F V
BULK (min )
2
o × f
LINE (min )
BULK (max )
=¾2 × V
IN (max )
N 375 V
REFLECTED DS(rated) BULK(max)
PS
=
V
REFLECTED
V
OUT
= 10.85
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9.2.2 Detailed Design Procedure

This procedure outlines the steps to design an off-line universal input continuous current mode (CCM) flyback converter using the UC2842. See Figure 9-2 for component names referred to in the design procedure.
9.2.2.1 Input Bulk Capacitor and Minimum Bulk Voltage
Bulk capacitance may consist of one or more capacitors connected in parallel, often with some inductance between them to suppress differential-mode conducted noise. The value of the input capacitor sets the minimum bulk voltage; setting the bulk voltage lower by using minimal input capacitance results in higher peak primary currents leading to more stress on the MOSFET switch, the transformer, and the output capacitors. Setting the bulk voltage higher by using a larger input capacitor results in higher peak current from the input source and the capacitor itself will be physically larger. Compromising between size and component stresses determines the acceptable minimum input voltage. The total required value for the primary-side bulk capacitance, CIN, is selected based upon the power level of the converter, P V
, and is chosen to maintain an acceptable minimum bulk voltage level, V
IN(min)
, the efficiency target, η, the minimum input voltage,
OUT
BULK(min)
, using Equation 9.
(9)
In this equation, V frequency is denoted as f
is the RMS value of the minimum AC input voltage, 85 VRMS, whose minimum line
IN(min)
LINE(min)
, equal to 47 Hz. Based on the CIN equation, to achieve a minimum bulk voltage of 75 V, assuming 85% converter efficiency, the bulk capacitor should be larger than 126 µF; 180 µF was chosen for the design, taking into consideration component tolerances and efficiency estimation.
9.2.2.2 Transformer Turns Ratio and Maximum Duty Cycle
The transformer design starts with selecting a suitable switching frequency for the given application. The UC2842 is capable of switching up to 500 kHz but considerations such as overall converter size, switching losses, core loss, system compatibility, and interference with communication frequency bands generally determine an optimum frequency that should be used. For this off-line converter, the switching frequency, fSW, is selected to be 110 kHz as a compromise to minimize the transformer size and the EMI filter size, and still have acceptable losses.
The transformer primary to secondary turns ratio, NPS, can be selected based on the desired MOSFET voltage rating and the secondary diode voltage rating. Because the maximum input voltage is 265 VRMS, the peak bulk input voltage can be calculated as shown in Equation 10.
(10)
To minimize the cost of the system, a readily available 650-V MOSFET is selected. Derating the maximum voltage stress on the drain to 80% of its rated value and allowing for a leakage inductance voltage spike of up to 30% of the maximum bulk input voltage, the reflected output voltage should be less than 130 V as shown in
Equation 11.
The maximum primary to secondary transformer turns ratio, NPS, for a 12 V output can be selected as
A turns ratio of NPS = 10 is used in the design example.
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(11)
(12)
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23
PA
= NPS×
V
OUT
V
BIAS
= 10
DIODE
=
V
BULK:max
;
N
PS
+ V
OUT
= 49.5 V
V
OUT
+ V
F
V
BULK:min
;
=
l
1
N
PS
p×l
D
MAX
1 FD
MAX
p
PS OUT F
MAX
BULK(min) PS OUT F
N V V
V N V V
u
u
P
=
1
2
×
kV
BULK:min
;
o
2
×
l
N
PS
× V
OUT
V
BULK:min
;
+ NPS× V
OUT
p
2
0.1 × PIN× f
SW
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The auxiliary winding is used to supply bias voltage to the UC2842. Maintaining the bias voltage above the VCC minimum operating voltage after turn on is required for stabile operation. The minimum VCC operating voltage for the UC2842 version of the controller is 10 V. The auxiliary winding is selected to support a 12-V bias voltage so that it is above the minimum operating level but still keeps the losses low in the IC. The primary to auxiliary turns ratio, NPA, can be calculated from Equation 13:
(13)
The output diode experiences a voltage stress that is equal to the output voltage plus the reflected input voltage:
(14)
To allow for voltage spikes due to ringing, a Schottky diode with a rated blocking voltage of greater than 60 V is recommended for this design. The forward voltage drop, VF, of this diode is estimated to be equal to 0.6 V
To avoid high peak currents, the flyback converter in this design operates in continuous conduction mode. Once NPS has been determined, the maximum duty cycle, D
, can be calculated using the transfer function for a
MAX
CCM flyback converter:
(15)
(16)
Because the maximum duty cycle exceeds 50%, and the design is an off-line (AC-input) application, the UC2842 is best suited for this application.
9.2.2.3 Transformer Inductance and Peak Currents
For this design example, the transformer magnetizing inductance is selected based upon the CCM condition. An inductance value that allows the converter to stay in CCM over a wider operating range before transitioning into discontinuous current mode is used to minimize losses due to otherwise high currents and also to decrease the output ripple. The design of the transformer in this example sizes the inductance so the converter enters CCM operation at approximately 10% load and minimum bulk voltage to minimize output ripple.
The inductor, LP for a CCM flyback can be calculated using Equation 17.
(17)
In Equation 17, the input power, PIN, is estimated by dividing the maximum output power, P
, by the target
OUT
efficiency, η, and fSW is the switching frequency; for the UC2842 the switching frequency is equal to the oscillator frequency and is set to 110 kHz. Therefore, the transformer inductance should be approximately 1.8 mH; a
1.5-mH inductance is chosen as the magnetizing inductance value for this design.
Based on calculated inductor value and the switching frequency, the current stress of the MOSFET and output diode can be calculated.
The peak current in the primary-side MOSFET of a CCM flyback can be calculated as shown in Equation 18.
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PK
MOSFET
=
P
IN
V
BULK:min
;
×
NPS× V
OUT
V
BULK:min
;
+:NPS× V
OUT
;
+ n
V
BULK (min )
2 × L
m
×
NPS× V
OUT
V
BULK:min
;
+:NPS× V
OUT
;
f
SW
r
RM S
MOSFET
=
¨
D
MAX
3
3
×
l
V
BULK (min )
LP× f
SW
p
2
FF
D
MAX
2
× I
PK
MOSFET
× V
BULK (min )
LP× f
SW
G+ kD
MAX
× I
PK
MOSFET
2
o
PK
DIODE
= NPS× I
PK
MOSFET
= 13.634 A
OUT
R
I
OUT
×
NPS× V
OUT
V
BULK:min
;
+ NPS× V
OUT
0.001 × V
OUT
× f
SW
= 1865 JF
OFFSET
=
R
CSF
R
CSF
+ R
P
× V
REF
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The MOSFET peak current is 1.36 A. The RMS current of the MOSFET is calculated to be 0.97 A as shown in
Equation 19. Therefore, IRFB9N65A is selected to be used as the primary-side switch.
The output diode peak current is equal to the MOSFET peak current reflected to the secondary side.
(20)
The diode average current is equal to the total output current, 4 A; combined with a required 60-V rating and
13.6-A peak current requirement, a 48CTQ060-1 is selected for the output diode.
9.2.2.4 Output Capacitor
(18)
(19)
The total output capacitance is selected based upon the output voltage ripple requirement. In this design, 0.1% voltage ripple is assumed. Based on the 0.1% ripple requirement, the capacitor value can be selected using
Equation 21.
(21)
To design for device tolerances, a 2200-µF capacitor was selected.
9.2.2.5 Current Sensing Network
The current sensing network consists of the primary-side current sensing resistor, RCS, filtering components R
CSF
and C
, and optional RP. Typically, the direct current sense signal contains a large amplitude leading
CSF
edge spike associated with the turnon of the main power MOSFET, reverse recovery of the output rectifier, and other factors including charging and discharging of parasitic capacitances. Therefore, C low-pass filter that provides immunity to suppress the leading edge spike. For this converter, C
CSF
and R
is chosen to
CSF
CSF
form a
be 100 pF.
Without RP, RCS sets the maximum peak current in the transformer primary based on the maximum amplitude of the ISENSE pin, which is specified to be 1 V. To achieve 1.36-A primary side peak current, a 0.75-Ω resistor is chosen for RCS.
The high current sense threshold of ISENSE helps to provide better noise immunity to the system but also results in higher losses in the current sense resistor. These current sense losses can be minimized by injecting an offset voltage into the current sense signal using RP. RP and R
form a resistor divider network from the
CSF
current sense signal to the device’s reference voltage, VREF, which adds an offset to the current sense voltage. This technique still achieves current mode control with cycle-by-cycle over-current protection. To calculate required offset value (V
), use Equation 22.
OFFSET
Once RP is added, adjust the current sense resistor, RCS, accordingly.
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(22)
25
P
> L
Pcrit
, then CCM
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9.2.2.6 Gate Drive Resistor
RG is the gate driver resistor for the power switch, QSW. The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Using a larger resistor value for RG slows down the turnon and turnoff of the MOSFET. A slower switching speed reduces EMI but also increases the switching loss. A trade-off between switching loss and EMI performance must be carefully performed. For this design, a 10-Ω resistor was chosen for the gate drive resistor.
9.2.2.7 VREF Capacitor
A precision 5-V reference voltage performs several important functions. The reference voltage is divided down internally to 2.5 V and connected to the error amplifier’s noninverting input for accurate output voltage regulation. Other duties of the reference voltage are to set internal bias currents and thresholds for functions such as the oscillator upper and lower thresholds. Therefore, the reference voltage must be bypassed with a ceramic capacitor (C
), a 1-µF, 16-V ceramic capacitor was selected for this converter. Placement of this capacitor
VREF
on the physical printed-circuit board layout must be as close as possible to the respective VREF and GROUND pins.
9.2.2.8 RT/CT
The internal oscillator uses a timing capacitor (CCT) and a timing resistor (RRT) to program the oscillator frequency and maximum duty cycle. The operating frequency can be programmed based the curves in Section
9.2.3, where the timing resistor can be found once the timing capacitor is selected. It is best for the timing
capacitor to have a flat temperature coefficient, typical of most COG or NPO type capacitors. For this converter,
15.4 kΩ and 1000 pF were selected for RRT and CCT to operate at 110-kHz switching.
9.2.2.9 Start-Up Circuit
At start-up, the IC gets its power directly from the high-voltage bulk, through a high-voltage resistor R
START
The selection of the start-up resistor is the trade-off between power loss and start-up time. The current flowing through R mA at its maximum value). A resistance of 100-kΩ was chosen for R
at the minimum input voltage must be higher than the VCC current under UVLO conditions (1
START
, providing 1 mA of start-up current at
START
low-line conditions. The start-up resistor is physically comprised of two 50-kΩ resistors in series to meet the high voltage requirements and power rating at high-line.
After VCC is charged up above the UVLO-on threshold, the UC2842 starts to consume full operating current. The VCC capacitor is required to provide enough energy to prevent its voltage from dropping below the UVLO­off threshold during start-up, before the output is able to reach its regulated level. A large bulk capacitance would hold more energy but would result in slower start-up time. In this design, a 120-µF capacitor is chosen to provide enough energy and maintain a start-up time of approximately 2 seconds.
9.2.2.10 Voltage Feedback Compensation
Feedback compensation, also called closed-loop control, can reduce or eliminate steady state error, reduce the sensitivity of the system to parametric changes, change the gain or phase of a system over some desired frequency range, reduce the effects of small signal load disturbances and noise on system performance, and create a stable system from an unstable system. A system is stable if its response to a perturbation is that the perturbation eventually dies out. A peak current mode flyback uses an outer voltage feedback loop to stabilize the converter. To adequately compensate the voltage loop, the open-loop parameters of the power stage must be determined.
9.2.2.10.1 Power Stage Poles and Zeroes
The first step in compensating a fixed frequency flyback is to verify if the converter is continuous conduction mode (CCM) or discontinuous conduction mode (DCM). If the primary inductance, LP, is greater than the inductance for DCM/CCM boundary mode operation, called the critical inductance, or L
, then the converter
Pcrit
operates in CCM:
.
(23)
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Pcrit
=
R
OUT
×:N
PS
;
2
2 × f
SW
×
l
V
IN
VIN+ V
OUT
× N
PS
p
2
O
=
R
OUT
× N
PS
RCS× A
CS
×
1
:
1 F D
;
2
R
+:2 × M;+ 1
NPS× V
OUT
V
BULKmin
+:NPS× V
OUT
;
RL =
2 × LP× f
SW
R
OUT
×:N
PS
;
2
V
OUT
× N
PS
V
BULKmin
ESRz
=
1
R
ESR
× C
OUT
ESRz
=
1
2 × N × R
ESR
× C
OUT
RHPz
=
R
OUT
×:1 F D
;
2
×:N
PS
;
2
LP× D
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(24)
For the entire input voltage range, the selected inductor has value larger than the critical inductor. Therefore, the converter operates in CCM and the compensation loop requires design based on CCM flyback equations.
The current-to-voltage conversion is done externally with the ground-referenced current sense resistor, RCS, and the internal resistor divider of 2R/R which sets up the internal current sense gain, ACS = 3. Note that the exact value of these internal resistors is not critical but the IC provides tight control of the resistor divider ratio, so regardless of the actual resistor value variations their relative value to each other is maintained.
The DC open-loop gain, GO, of the fixed-frequency voltage control loop of a peak current mode control CCM flyback converter shown in Equation 25 is approximated by first using the output load, R
, the primary to
OUT
secondary turns ratio, NPS, the maximum duty cycle, D, calculated in Equation 25.
(25)
In Equation 25, D is calculated with Equation 26, τL is calculated with Equation 27, and M is calculated with
Equation 28.
(26)
(27)
(28)
For this design, a converter with an output voltage V
of 12 V, and 48 W relates to an output load, R
OUT
OUT
, equal to 3 Ω at full load. With a maximum duty cycle calculated to be 0.627, a current sense resistance, RCS, of 0.75 Ω, and a primary to secondary turns-ratio, NPS, of 10, the open-loop gain calculates to 3.082, or 9.776 dB.
A CCM flyback has two zeroes that are of interest. The ESR and the output capacitance contribute a left-half plane zero, ω
The f
zero for an output capacitance of 2200 µF and a total ESR of 43 mΩ is located at 1.682 kHz.
ESRz
, to the power stage, and the frequency of this zero, f
ESRz
, are calculated with Equation 30.
ESRz
(29)
(30)
CCM flyback converters have a zero in the right-half plane, RHP, in their transfer function. A RHP zero has the same 20 dB/decade rising gain magnitude with increasing frequency just like a left-half plane zero, but it adds a 90° phase lag instead of lead. This phase lag tends to limit the overall loop bandwidth. The frequency location, f
, of the RHP zero, ω
RHPz
, is a function of the output load, the duty cycle, the primary inductance, LP, and
RHPz
the primary to secondary side turns ratio, NPS.
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27
RHPz
=
R
OUT
×:1 F D
;
2
×:N
PS
;
2
2 × N × LP× D
P1
=
:
1 F D
;
3
R
L
+ 1 + D
R
OUT
× C
OUT
P1
=
:
1 F D
;
3
R
L
+ 1 + D
2 × N × R
OUT
× C
OUT
P2
= N × fSW
P2
=
f
SW
2
P
=
1
N ×>MC×:1 F D;F 0.5
?
C
=
S
e
S
n
+ 1
ideal
=
1
N
+ 0.5
1 F D
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(32)
The right-half plane zero frequency increases with higher input voltage and lighter load. Generally, the design requires consideration of the worst case of the lowest right-half plane zero frequency and the converter must be compensated at the minimum input and maximum load condition. With a primary inductance of 1.5 mH, at 75-V DC input, the RHP zero frequency, f
, is equal to 7.07 kHz at maximum duty cycle, full load.
RHPz
The power stage has one dominate pole, ωP1, which is in the region of interest, located at a lower frequency, fP1, which is related to the duty cycle, D, the output load, and the output capacitance, calculated with Equation 34. There is also a double pole placed at half the switching frequency of the converter, fP2 calculated with Equation
36. For this example, pole fP1 is located at 40.37 Hz and fP2 is at 55 kHz.
(33)
(34)
(35)
(36)
9.2.2.10.2 Slope Compensation
Slope compensation is the large signal sub-harmonic instability that can occur with duty cycles that may extend beyond 50% where the rising primary side inductor current slope may not match the falling secondary side current slope. The sub-harmonic oscillation would result in an increase in the output voltage ripple and may even limit the power handling capability of the converter.
The target of slope compensation is to achieve an ideal quality coefficient, QP , to be equal to 1 at half of the switching frequency. The QP is calculated with Equation 37.
(37)
In Equation 37, D is the primary side switch duty cycle and MC is the slope compensation factor, which is defined with Equation 38.
(38)
In Equation 38, Se is the compensation ramp slope and the Sn is the inductor rising slope. The optimal goal of the slope compensation is to achieve QP equal to 1; upon rearranging Equation 38 the ideal value of slope compensation factor is determined:
For this design to have adequate slope compensation, MC must be 2.193 when D reaches it maximum value of
0.627.
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(39)
n
=
V
INmin
× R
CS
L
= 0.038
V
Js
e
=:MCF 1;× Sn= 44.74
mV
Js
ONmin
=
D
f
SW
OSC
=
V
OSCpp
t
ONmin
=
1.7 V
5.7 Js
= 298
mV
Js
CSF
=
R
RAMP
S
OSC
S
e
F 1
OPEN
:s;
= G
0
×
l
1 +
s:f
;
X
ESRz
p×l
1 F
s:f
;
X
RHPz
p
1 +
s:f
;
X
P1
×
1
1 +
s:f
;
X
P2
× Q
P
+
s:f
;
2
:
X
P2
;
2
OPEN
:s;
= 20 × log:H
OPEN
:s;;
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The inductor rising slope, Sn, at the ISENSE pin is calculated with Equation 40.
The compensation slope, Se, is calculated with Equation 41.
SLUS223G – APRIL 1997 – REVISED JULY 2022
(40)
(41)
The compensation slope is added into the system through R
RAMP
and R
. The C
CSF
is an AC-coupling
RAMP
capacitor that allows the voltage ramp of the oscillator to be used without adding an offset to the current sense; select a value to approximate high frequency short circuit, such as 10 nF as a starting point and make adjustments if required. The R
RAMP
and R
resistors form a voltage divider from the oscillator charge slope
CSF
and this proportional ramp is injected into the ISENSE pin to add slope compensation. Choose the value of R
to be much larger than the RRT resistor so that it does not load down the internal oscillator and result in a
RAMP
frequency shift. The oscillator charge slope is calculated using the peak-to-peak voltage of the RT/CT sawtooth waveform, V
To achieve a 44.74-mV/µs compensation slope, R R
is selected as 24.9 kΩ, a 4.2-kΩ resistor was selected for R
RAMP
9.2.2.10.3 Open-Loop Gain
, equal to 1.7 V, and the minimum on-time, as shown in Equation 43.
OSCpp
resistor is calculated with Equation 44. In this design,
CSF
.
CSF
(42)
(43)
(44)
Once the power stage poles and zeros are calculated and the slope compensation is determined, the power stage open-loop gain and phase of the CCM flyback converter can be plotted as a function of frequency. The power stage transfer function can be characterized with Equation 45.
The bode for the open-loop gain and phase can be plotted by using Equation 46.
(see Figure 9-3 and Figure 9-4).
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(45)
(46)
29
frequency (Hz)
Gain (dB)
1 10 100 1000 10000 100000
-25
-20
-15
-10
-5
0
5
10
D001
frequency (Hz)
Phase (q)
1 10 100 1000 10000 100000
-180
-135
-90
-45
0
D002
BW
=
f
RHPz
4
FBU
=
V
OUT
F REF
TL431
I
FB _REF
FBB
=
REF
TL431
V
OUT
F REF
TL431
× R
FBU
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Figure 9-3. Converter Open-Loop Bode Plot - Gain
Figure 9-4. Converter Open-Loop Bode Plot -
Phase
9.2.2.10.4 Compensation Loop
The design of the compensation loop involves selecting the appropriate components so that the required gain, poles, and zeros can be designed to result in a stabile system over the entire operating range. There are three distinct portions of the loop: the TL431, the opto-coupler, and the error amplifier. Each of these stages is combined with the power stage to result in a stable robust system.
For good transient response, the bandwidth of the finalized design should be as large as possible. The bandwidth of a CCM flyback, fBW, is limited to ¼ of the RHP zero frequency, or approximately 1.77 kHz using
Equation 47.
(47)
The gain of the open-loop power stage at fBW can be calculated using Equation 46 or can be observed on the Bode plot (Figure 9-3 ) and is equal to –19.55 dB and the phase at fBW is equal to –58°.
The secondary side portion of the compensation loop begins with establishing the regulated steady state output voltage. To set the regulated output voltage, a TL431 adjustable precision shunt regulator is ideally suited for use on the secondary side of isolated converters due to its accurate voltage reference and internal op amp. The resistors used in the divider from the output terminals of the converter to the TL431 REF pin are selected based upon the desired power consumption. Because the REF input current for the TL431 is only 2 µA, selecting the resistors for a divider current, I
, of 1 mA results in minimal error. The top divider resistor, R
FB_REF
FBU
, is
calculated using Equation 48:
The TL431 reference voltage, REF set the output voltage to 12 V, 2.49 kΩ is used for R
For good phase margin, a compensator zero, f bandwidth:
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, has a typical value of 2.495 V. A 9.53-kΩ resistor is chosen for R
TL431
.
FBB
, is needed and should be placed at 1/10th the desired
COMPz
Copyright © 2022 Texas Instruments Incorporated
UC2845 UC3845
(48)
FBU
(49)
. To
COMPz
=
f
BW
10
COMPz
= 2 × N × f
COMPz
COMPz
=
1
X
COMPz
× C
COMPz
TL431
:s;
=lR
COMPz
+
1
s(f) × C
ZCOMPz
p
×
1
R
FBU
COMPp
=
1
2 × N × f
ESRz
× R
COMPp
= 9.46 nF
EA
:s;
=
l
R
COMPp
R
FBG
p
× F
1
1 + s:f;× C
COMPp
× R
COMPp
G
OPTO
(s) =
CTR × R
OPTO
R
LED
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(50)
(51)
With this converter, f C µF, R
, placed across the TL431 cathode to REF sets the compensator zero location. Setting C
COMPz
is calculated using Equation 52:
COMPz
should be set at approximately 177 Hz. A series resistor, R
COMPz
, and capacitor,
COMPz
COMPz
to 0.01
(52)
Using a standard value of 88.7 kΩ for RZ and a 0.01 µF for CZ results in a zero placed at 179 Hz.
Referring to Figure 9-2, R the Zener diode, D
. For robust performance, 10 mA is provided to bias the TL431 by way of the 10-V Zener
REG
and 1-kΩ resistor is used for R
provides cathode current to the TL431 from the regulated voltage provided from
TLbias
.
TLbias
The gain of the TL431 portion of the compensation loop can be written as:
(53)
A compensation pole is needed at the frequency of right half plane zero or the ESR zero, whichever is lowest. Based previous the analysis, the right half plane zero, f
, is located at 7.07 kHz and the ESR zero, f
RHPz
ESRz
, is at
1.68 kHz; therefore, for this design, the compensation pole must be put at 1.68 kHz. The opto-coupler contains a parasitic pole that is difficult to characterize over frequency so the opto-coupler is set up with a pulldown resistor, R
equal to 1 kΩ, which moves the parasitic opto-coupler pole further out and beyond the range of interest
OPTO
for this design.
The required compensation pole can be added to the primary side error amplifier using R Choosing R
as 10 kΩ, the required value of C
COMPp
is determined using Equation 54.
COMPp
COMPp
and C
COMPp
.
A 10-nF capacitor is used for C
setting the compensation pole at 1.59 kHz.
COMPp
Adding a DC gain to the primary side error amplifier may be required to obtain the required bandwidth and helps to adjust the loop gain as needed. Using a 4.99 kΩ for R
sets the DC gain on the error amplifier to
FBG
2. At this point the gain transfer function of the error amplifier stage, GEA(s), of the compensation loop can be characterized:
Using an opto-coupler whose current transfer ratio (CTR) is typically at 100% in the frequency range of interest so that CTR = 1, the transfer function of the opto-coupler stage, G
The bias resistor, R R
, sets the gain across the isolation boundary. R
OPTO
, to the internal diode of the opto-coupler, and the pulldown resistor on the opto emitter,
LED
has already been set to 1 kΩ but the value of R
OPTO
(s), is equal to:
OPTO
has not yet been determined.
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(54)
(55)
(56)
LED
31
TOTAL
:s;=
H
OPEN
:s;×
G
OPTO
:s;×
G
EA
:s;×
G
TL431
:s;
LED
QH
OPEN
:s;×
CTR × C
OPTO
×
G
EA
:s;×
G
TL431
:s;
CLOSED
:s;
= H
OPEN
:s;
×
l
CTR × R
OPTO
R
LED
p×l
R
COMPp
R
FBG
p
× F
1
1 + ks × C
COMPp
× R
COMPp
o
G
× n
R
COMPz
+
@
1
s × C
COMPz
A
R
FBU
r
frequency (Hz)
Gain (dB)
1 10 100 1000 10000 100000
-40
-20
0
20
40
60
80
D003
frequency (Hz)
Degrees (q)
1 10 100 1000 10000 100000
-180
-135
-90
-45
0
D001D004
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The total closed-loop gain, G G
(s), the error amplifier gain, GEA(s), and the gain of the TL431 stage, G
OPTO
The required value for R
can be selected to achieve the desired crossover frequency, fBW. By setting the total
LED
loop gain equal to 1 at the desired crossover frequency and rearranging Equation 57, the optimal value for R
(s), is the combination of the open-loop power stage, Ho(s), the opto gain,
TOTAL
(s):
TL431
(57)
LED
can be determined, as shown in Equation 58.
(58)
A 1.3-kΩ resistor suits the requirement for R
LED
.
Based on the compensation loop structure, the entire compensation loop transfer function is written as Equation
59.
(59)
The final closed-loop bode plots are show in Figure 9-5 and Figure 9-6. The converter achieves a crossover frequency of approximately 1.8 kHz and has a phase margin of approximately 67o.
TI recommends checking the loop stability across all the corner cases including component tolerances to ensure system stability.
Figure 9-5. Converter Closed-Loop Bode Plot –
Gain
Figure 9-6. Converter Closed-Loop Bode Plot –
Phase
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9.2.3 Application Curves

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Figure 9-7. Primary Side MOSFET Drain to Source
Voltage at 240-V AC Input (100 V/div)
Figure 9-9. Output Voltage During 0.9-A to 2.7-A
Load Transient (CH1: Output Voltage AC Coupled,
200 mV/div; CH4: Output Current, 1 A/div)
Figure 9-8. Primary Side MOSFET Drain to Source
Voltage at 120-V AC Input (100 V/div)
Figure 9-10. Output Voltage Ripple at Full Load
(100 mV/div)
Figure 9-11. Output Voltage Behavior at Full Load Start-Up (5 V/div)
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10 Power Supply Recommendations

It is important to bypass the ICs supply (VCC) and reference voltage (VREF) pins with a 0.1-µF to 1-µF ceramic capacitor to ground. The capacitors must be placed as close to the actual pin connections as possible for optimal noise filtering. A second, larger filter capacitor may also be required in offline applications to hold the supply voltage (VCC) above the UVLO turnoff threshold during start-up.
To prevent false triggering due to leading edge noises, an RC current sense filter may be required on ISENSE. Keep the time constant of the RC filter well below the minimum on-time pulse width.
Schottky diodes may be necessary on the OUTPUT pin to prevent overshoot and undershoot due to the high impedance to the supply rail and to ground, respectively. A bleeder resistor, placed between the gate and the source of the MOSFET should be used to prevent activating the power switch with extraneous leakage currents during undervoltage lockout.
To prevent noise problems with high-speed switching transients, bypass VREF to ground with a ceramic capacitor close to the IC package. A minimum of 0.1-µF ceramic capacitor is required. Additional VREF bypassing is required for external loads on the reference. An electrolytic capacitor may also be used in addition to the ceramic capacitor.
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11 Layout

11.1 Layout Guidelines

11.1.1 Feedback Traces

Try to run the feedback trace as far from the inductor and noisy power traces as possible. Be as direct as possible with the feedback trace and somewhat thick. These two sometimes involve a trade-off, but keeping it away from EMI and other noise sources is the more critical of the two. If possible, run the feedback trace on the side of the PCB opposite of the inductor with a ground plane separating the two.

11.1.2 Bypass Capacitors

When using a low value ceramic bypass capacitor, it should be located as close to the VCC pin of the device as possible. This eliminates as much trace inductance effects as possible and gives the internal device rail a cleaner voltage supply. Using surface mount capacitors also reduces lead length and lessens the chance of noise coupling into the effective antenna created by through-hole components.

11.1.3 Compensation Components

For best stability, external compensation components should be placed close to the IC. Keep VFB lead length as short as possible and VFB stray capacitance as small as possible. Surface mount components are recommended here as well for the same reasons discussed for the filter capacitors. These should not be located very close to traces with high switching noise.

11.1.4 Traces and Ground Planes

Make all of the power (high current) traces as short, direct, and thick as possible. It is good practice on a standard PCB board to make the traces an absolute minimum of 15 mils (0.381 mm) per Ampere. The inductor, output capacitors, and output diode should be as close to each other possible. This helps reduce the EMI radiated by the power traces due to the high switching currents through them. This also reduces lead inductance and resistance as well, which in turn reduces noise spikes, ringing, and resistive losses that produce voltage errors.
The grounds of the IC, input capacitors, output capacitors, and output diode (if applicable) should be connected close together directly to a ground plane. It would also be a good idea to have a ground plane on both sides of the PCB. This reduces noise as well by reducing ground loop errors as well as by absorbing more of the EMI radiated by the inductor. For multi-layer boards with more than two layers, a ground plane can be used to separate the power plane (where the power traces and components are) and the signal plane (where the feedback and compensation and components are) for improved performance. On multi-layer boards the use of vias is required to connect traces and different planes. It is good practice to use one standard via per 200 mA of current if the trace needs to conduct a significant amount of current from one plane to the other.
Arrange the components so that the switching current loops curl in the same direction. Due to the way switching regulators operate, there are two power states. One state when the switch is on and one when the switch is off. During each state there is a current loop made by the power components that are currently conducting. Place the power components so that during each of the two states the current loop is conducting in the same direction. This prevents magnetic field reversal caused by the traces between the two half-cycles and reduces radiated EMI.
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35
TO-220FP Bottom View
VREF
OUTPUT
COMP
ISENSE
VFB
RT/CT
VCC
GROUND
UCx84x
R
P
R
OPTO
R
RT
C
CT
C
VREF
C
CSF
C
VCCbp
R
RAMP
C
RAMP
R
G
R
CSF
R
CS1
R
CS2
Track To
Transformer =>
FBead
C
COMPp
R
COMPp
R
FBG
Track To
<= %XON&DSÅ
MOSFET Heatsink
Aux Cap
S
D
G
C
SNUB
R
SNUB
Wave Solder Direction ==>
C
VCC1
C
VCC
Track To
<= Bulk Cap +
TRANSFORMER
6
4
1
2
AUX Winding½ PRI Winding ½ PRI Winding
22AWG
Jumper
Wire
22AWG Jumper
Wires
PCB Bottom-side View
K
AC
E
OPTO-ISOLATOR
Copyright © 2016, Texas Instruments Incorporated
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11.2 Layout Example

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Figure 11-1. UCx84x Layout Example
UC2845 UC3845
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SLUS223G – APRIL 1997 – REVISED JULY 2022

12 Device and Documentation Support

12.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Subscribe to updates to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

12.2 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

12.3 Trademarks

TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.5 Glossary

TI Glossary This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, see the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device Status
5962-8670401PA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670401VPA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670401XA ACTIVE LCCC FK 20 1 Non-RoHS
5962-8670402PA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670402XA ACTIVE LCCC FK 20 1 Non-RoHS
5962-8670403PA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670403VXA ACTIVE LCCC FK 20 1 Non-RoHS
5962-8670403XA ACTIVE LCCC FK 20 1 Non-RoHS
5962-8670404DA ACTIVE CFP W 14 1 Non-RoHS
5962-8670404PA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670404VPA ACTIVE CDIP JG 8 1 Non-RoHS
5962-8670404VXA ACTIVE LCCC FK 20 1 Non-RoHS
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
SNPB N / A for Pkg Type -55 to 125 8670401PA
UC1842
SNPB N / A for Pkg Type -55 to 125 8670401VPA
UC1842
SNPB N / A for Pkg Type -55 to 125 5962-
8670401XA UC1842L/ 883B
SNPB N / A for Pkg Type -55 to 125 8670402PA
UC1843
SNPB N / A for Pkg Type -55 to 125 5962-
8670402XA UC1843L/ 883B
SNPB N / A for Pkg Type -55 to 125 8670403PA
UC1844
SNPB N / A for Pkg Type -55 to 125 5962-
8670403VXA UC1844L QMLV
SNPB N / A for Pkg Type -55 to 125 5962-
8670403XA UC1844L/ 883B
SNPB N / A for Pkg Type 5962-8670404DA
UC1845W/883B
SNPB N / A for Pkg Type -55 to 125 8670404PA
UC1845
SNPB N / A for Pkg Type 8670404VPA
UC1845
SNPB N / A for Pkg Type -55 to 125 5962-
8670404VXA UC1845L QMLV
22-Feb-2023
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PACKAGE OPTION ADDENDUM
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Orderable Device Status
5962-8670404XA ACTIVE LCCC FK 20 1 Non-RoHS
UC1842J ACTIVE CDIP JG 8 1 Non-RoHS
UC1842J883B ACTIVE CDIP JG 8 1 Non-RoHS
UC1842L883B ACTIVE LCCC FK 20 1 Non-RoHS
UC1842W ACTIVE CFP W 14 1 Non-RoHS
UC1843J ACTIVE CDIP JG 8 50 Non-RoHS
UC1843J883B ACTIVE CDIP JG 8 1 Non-RoHS
UC1843L ACTIVE LCCC FK 20 1 Non-RoHS
UC1843L883B ACTIVE LCCC FK 20 1 Non-RoHS
UC1844J ACTIVE CDIP JG 8 1 Non-RoHS
UC1844J883B ACTIVE CDIP JG 8 1 Non-RoHS
UC1844L883B ACTIVE LCCC FK 20 1 Non-RoHS
UC1845J ACTIVE CDIP JG 8 1 Non-RoHS
UC1845J883B ACTIVE CDIP JG 8 1 Non-RoHS
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
& Green
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
SNPB N / A for Pkg Type -55 to 125 5962-
8670404XA UC1845L/ 883B
SNPB N / A for Pkg Type -55 to 125 UC1842J
SNPB N / A for Pkg Type -55 to 125 8670401PA
UC1842
SNPB N / A for Pkg Type -55 to 125 5962-
8670401XA UC1842L/ 883B
SNPB N / A for Pkg Type -55 to 125 UC1842W
SNPB N / A for Pkg Type -55 to 125 UC1843J
SNPB N / A for Pkg Type -55 to 125 8670402PA
UC1843
SNPB N / A for Pkg Type -55 to 125 UC1843L
SNPB N / A for Pkg Type -55 to 125 5962-
8670402XA UC1843L/ 883B
SNPB N / A for Pkg Type -55 to 125 UC1844J
SNPB N / A for Pkg Type -55 to 125 8670403PA
UC1844
SNPB N / A for Pkg Type -55 to 125 5962-
8670403XA UC1844L/ 883B
SNPB N / A for Pkg Type -55 to 125 UC1845J
SNPB N / A for Pkg Type -55 to 125 8670404PA
UC1845
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Orderable Device Status
UC1845L ACTIVE LCCC FK 20 1 Non-RoHS
UC1845L883B ACTIVE LCCC FK 20 1 Non-RoHS
UC1845W ACTIVE CFP W 14 1 Non-RoHS
UC1845W883B ACTIVE CFP W 14 1 Non-RoHS
UC2842D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2842D
UC2842D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2842 UC2842D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2842 UC2842D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2842
UC2842DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2842D
UC2842N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2842N
UC2842NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2842N
UC2843D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843D
UC2843D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843 UC2843D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843 UC2843D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843
UC2843D8TRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843
UC2843DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843D UC2843DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2843D
UC2843N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2843N
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& Green
& Green
& Green
& Green
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
SNPB N / A for Pkg Type -55 to 125 UC1845L
SNPB N / A for Pkg Type -55 to 125 5962-
8670404XA UC1845L/ 883B
SNPB N / A for Pkg Type -55 to 125 UC1845W
SNPB N / A for Pkg Type 5962-8670404DA
UC1845W/883B
22-Feb-2023
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Orderable Device Status
UC2843NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2843N
UC2844D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844D
UC2844D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844 UC2844D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844 UC2844D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844
UC2844DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844D UC2844DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2844D
UC2844N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2844N
UC2844NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2844N
UC2845D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845D
UC2845D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845 UC2845D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845 UC2845D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845
UC2845D8TRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845
UC2845DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845D UC2845DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 UC2845D
UC2845N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2845N
UC2845NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2845N
UC3842D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3842D
UC3842D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3842 UC3842D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3842
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
22-Feb-2023
Op Temp (°C) Device Marking
(4/5)
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Addendum-Page 4
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device Status
UC3842DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3842D
UC3842N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3842N
UC3842NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3842N
UC3843D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843D
UC3843D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843 UC3843D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843 UC3843D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843
UC3843D8TRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843
UC3843DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843D UC3843DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3843D
UC3843N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3843N
UC3843NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3843N
UC3844D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3844D
UC3844D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3844 UC3844D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3844
UC3844DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3844D
UC3844DTRG4 ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3844D
UC3844N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3844N
UC3844NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3844N
UC3845AJ ACTIVE CDIP JG 8 1 Non-RoHS
UC3845D ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845D
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& Green
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
SNPB N / A for Pkg Type 0 to 70 UC3845AJ
22-Feb-2023
Samples
(4/5)
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Addendum-Page 5
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device Status
UC3845D8 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845 UC3845D8G4 ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845 UC3845D8TR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845
UC3845D8TRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845
UC3845DG4 ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845D UC3845DTR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 UC3845D
UC3845N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3845N
UC3845NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3845N
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
Lead finish/ Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
22-Feb-2023
(4/5)
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Samples
Addendum-Page 6
PACKAGE OPTION ADDENDUM
www.ti.com
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
22-Feb-2023
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF UC1842, UC1842-SP, UC1843, UC1844, UC1844-SP, UC1845, UC1845-SP, UC3842, UC3843, UC3844, UC3845, UC3845AM :
Catalog : UC3842, UC1842, UC3843, UC3844, UC1844, UC3845, UC1845, UC3842M, UC3845A
Enhanced Product : UC1845A-EP
Military : UC1842, UC1843, UC1844, UC1845, UC1845A
Space : UC1842-SP, UC1843-SP, UC1844-SP, UC1845-SP, UC1845A-SP
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
Enhanced Product - Supports Defense, Aerospace and Medical Applications
Military - QML certified for Military and Defense Applications
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
Addendum-Page 7
PACKAGE MATERIALS INFORMATION
Reel Width (W1)
REEL DIMENSIONS
A0 B0 K0
W
Dimension designed to accommodate the component length Dimension designed to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers
Dimension designed to accommodate the component width
TAPE DIMENSIONS
K0 P1
B0
W
A0
Cavity
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Pocket Quadrants
Sprocket Holes
Q1
Q1Q2 Q2
Q3 Q3Q4 Q4
User Direction of Feed
P1
Reel
Diameter
www.ti.com 4-May-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
UC2842D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC2842DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC2843D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC2843DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC2844D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC2844DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC2845D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC2845DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC3842D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC3842DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC3843D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC3843DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC3844D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC3844DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
UC3845D8TR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
UC3845DTR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
Device Package
Type
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
www.ti.com 4-May-2022
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
UC2842D8TR SOIC D 8 2500 340.5 336.1 25.0
UC2842DTR SOIC D 14 2500 340.5 336.1 32.0
UC2843D8TR SOIC D 8 2500 340.5 336.1 25.0
UC2843DTR SOIC D 14 2500 340.5 336.1 32.0
UC2844D8TR SOIC D 8 2500 340.5 336.1 25.0
UC2844DTR SOIC D 14 2500 340.5 336.1 32.0
UC2845D8TR SOIC D 8 2500 340.5 336.1 25.0
UC2845DTR SOIC D 14 2500 340.5 336.1 32.0
UC3842D8TR SOIC D 8 2500 340.5 336.1 25.0
UC3842DTR SOIC D 14 2500 340.5 336.1 32.0
UC3843D8TR SOIC D 8 2500 340.5 336.1 25.0
UC3843DTR SOIC D 14 2500 340.5 336.1 32.0
UC3844D8TR SOIC D 8 2500 340.5 336.1 25.0
UC3844DTR SOIC D 14 2500 340.5 336.1 32.0
UC3845D8TR SOIC D 8 2500 340.5 336.1 25.0
UC3845DTR SOIC D 14 2500 340.5 336.1 32.0
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 4-May-2022
TUBE
T - Tube
height
W - Tube
width
B - Alignment groove width
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
5962-8670401XA FK LCCC 20 1 506.98 12.06 2030 NA 5962-8670402XA FK LCCC 20 1 506.98 12.06 2030 NA
5962-8670403VXA FK LCCC 20 1 506.98 12.06 2030 NA
5962-8670403XA FK LCCC 20 1 506.98 12.06 2030 NA 5962-8670404DA W CFP 14 1 506.98 26.16 6220 NA
5962-8670404VXA FK LCCC 20 1 506.98 12.06 2030 NA
5962-8670404XA FK LCCC 20 1 506.98 12.06 2030 NA
UC1842L883B FK LCCC 20 1 506.98 12.06 2030 NA
UC1842W W CFP 14 1 506.98 26.16 6220 NA
UC1843L FK LCCC 20 1 506.98 12.06 2030 NA UC1843L883B FK LCCC 20 1 506.98 12.06 2030 NA UC1844L883B FK LCCC 20 1 506.98 12.06 2030 NA
UC1845L FK LCCC 20 1 506.98 12.06 2030 NA UC1845L883B FK LCCC 20 1 506.98 12.06 2030 NA
UC1845W W CFP 14 1 506.98 26.16 6220 NA
UC1845W883B W CFP 14 1 506.98 26.16 6220 NA
UC2842D D SOIC 14 50 507 8 3940 4.32
UC2842D8 D SOIC 8 75 507 8 3940 4.32
UC2842D8G4 D SOIC 8 75 507 8 3940 4.32
UC2842N P PDIP 8 50 506 13.97 11230 4.32
UC2842N P PDIP 8 50 506 13.97 11230 4.32 UC2842NG4 P PDIP 8 50 506 13.97 11230 4.32 UC2842NG4 P PDIP 8 50 506 13.97 11230 4.32
UC2843D D SOIC 14 50 507 8 3940 4.32
UC2843D8 D SOIC 8 75 507 8 3940 4.32
UC2843D8G4 D SOIC 8 75 507 8 3940 4.32
UC2843DG4 D SOIC 14 50 507 8 3940 4.32
UC2843N P PDIP 8 50 506 13.97 11230 4.32
UC2843N P PDIP 8 50 506 13.97 11230 4.32
L - Tube length
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 4-May-2022
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
UC2843NG4 P PDIP 8 50 506 13.97 11230 4.32 UC2843NG4 P PDIP 8 50 506 13.97 11230 4.32
UC2844D D SOIC 14 50 507 8 3940 4.32
UC2844D8 D SOIC 8 75 507 8 3940 4.32
UC2844D8G4 D SOIC 8 75 507 8 3940 4.32
UC2844DG4 D SOIC 14 50 507 8 3940 4.32
UC2844N P PDIP 8 50 506 13.97 11230 4.32
UC2844N P PDIP 8 50 506 13.97 11230 4.32 UC2844NG4 P PDIP 8 50 506 13.97 11230 4.32 UC2844NG4 P PDIP 8 50 506 13.97 11230 4.32
UC2845D D SOIC 14 50 507 8 3940 4.32
UC2845D8 D SOIC 8 75 507 8 3940 4.32
UC2845D8G4 D SOIC 8 75 507 8 3940 4.32
UC2845DG4 D SOIC 14 50 507 8 3940 4.32
UC2845N P PDIP 8 50 506 13.97 11230 4.32
UC2845N P PDIP 8 50 506 13.97 11230 4.32 UC2845NG4 P PDIP 8 50 506 13.97 11230 4.32 UC2845NG4 P PDIP 8 50 506 13.97 11230 4.32
UC3842D D SOIC 14 50 507 8 3940 4.32
UC3842D8 D SOIC 8 75 507 8 3940 4.32
UC3842N P PDIP 8 50 506 13.97 11230 4.32
UC3842N P PDIP 8 50 506 13.97 11230 4.32 UC3842NG4 P PDIP 8 50 506 13.97 11230 4.32 UC3842NG4 P PDIP 8 50 506 13.97 11230 4.32
UC3843D D SOIC 14 50 507 8 3940 4.32
UC3843D8 D SOIC 8 75 507 8 3940 4.32
UC3843D8G4 D SOIC 8 75 507 8 3940 4.32
UC3843DG4 D SOIC 14 50 507 8 3940 4.32
UC3843N P PDIP 8 50 506 13.97 11230 4.32
UC3843N P PDIP 8 50 506 13.97 11230 4.32 UC3843NG4 P PDIP 8 50 506 13.97 11230 4.32 UC3843NG4 P PDIP 8 50 506 13.97 11230 4.32
UC3844D D SOIC 14 50 507 8 3940 4.32
UC3844D8 D SOIC 8 75 507 8 3940 4.32
UC3844N P PDIP 8 50 506 13.97 11230 4.32
UC3844N P PDIP 8 50 506 13.97 11230 4.32 UC3844NG4 P PDIP 8 50 506 13.97 11230 4.32 UC3844NG4 P PDIP 8 50 506 13.97 11230 4.32
UC3845D D SOIC 14 50 507 8 3940 4.32
UC3845D8 D SOIC 8 75 507 8 3940 4.32
UC3845D8G4 D SOIC 8 75 507 8 3940 4.32
UC3845DG4 D SOIC 14 50 507 8 3940 4.32
UC3845N P PDIP 8 50 506 13.97 11230 4.32
Pack Materials-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com 4-May-2022
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
UC3845N P PDIP 8 50 506 13.97 11230 4.32 UC3845NG4 P PDIP 8 50 506 13.97 11230 4.32 UC3845NG4 P PDIP 8 50 506 13.97 11230 4.32
Pack Materials-Page 5
MECHANICAL DATA
MCER001A – JANUARY 1995 – REVISED JANUARY 1997
JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE
0.400 (10,16)
0.355 (9,00)
0.063 (1,60)
0.015 (0,38)
0.100 (2,54)
8
1
5
4
0.065 (1,65)
0.045 (1,14)
0.020 (0,51) MIN
0.023 (0,58)
0.015 (0,38)
0.280 (7,11)
0.245 (6,22)
0.310 (7,87)
0.290 (7,37)
0.200 (5,08) MAX Seating Plane
0.130 (3,30) MIN
0°–15°
0.014 (0,36)
0.008 (0,20)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice. C. This package can be hermetically sealed with a ceramic lid using glass frit. D. Index point is provided on cap for terminal identification. E. Falls within MIL STD 1835 GDIP1-T8
4040107/C 08/96
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
GENERIC PACKAGE VIEW
LCCC - 2.03 mm max heightFK 20
8.89 x 8.89, 1.27 mm pitch
This image is a representation of the package family, actual package may vary.
LEADLESS CERAMIC CHIP CARRIER
Refer to the product data sheet for package details.
www.ti.com
4229370\/A\
PACKAGE OUTLINE
A
.189-.197 [4.81-5.00]
NOTE 3
.228-.244 TYP [5.80-6.19]
1
4
B .150-.157
[3.81-3.98]
PIN 1 ID AREA
NOTE 4
SCALE 2.800
6X .050
[1.27]
8
2X
.150 [3.81]
5
8X .012-.020 [0.31-0.51]
.010 [0.25] C A B
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.004 [0.1] C
4X (0 -15 )
.069 MAX
[1.75]
.005-.010 TYP [0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010 [0.25]
0 - 8
.016-.050 [0.41-1.27]
(.041)
[1.04]
DETAIL A
TYPICAL
.004-.010 [0.11-0.25]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches. Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
8X (.061 )
8X (.024)
6X (.050 )
[1.27]
[0.6]
[1.55]
SYMM
1
4
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
EXAMPLE BOARD LAYOUT
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
SEE DETAILS
8
SYMM
(R.002 ) TYP
5
[0.05]
EXPOSED
METAL
METAL
NON SOLDER MASK
SOLDER MASK OPENING
.0028 MAX [0.07] ALL AROUND
DEFINED
SOLDER MASK
OPENING
EXPOSED
METAL
.0028 MIN [0.07] ALL AROUND
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL UNDER SOLDER MASK
4214825/C 02/2019
www.ti.com
8X (.061 )
8X (.024)
[0.6]
6X (.050 )
[1.27]
[1.55]
EXAMPLE STENCIL DESIGN
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
SYMM
1
8
SYMM
(R.002 ) TYP
4
(.213)
[5.4]
5
[0.05]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SCALE:8X
4214825/C 02/2019
www.ti.com
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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS.
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