Texas Instruments UC1611L883B, UC1611L, UC1611J883B, UC1611J Datasheet

UC1611
UC3611

FEATURES

• Matched, Four-Diode Monolith ic Array

• High Peak Current

• Low-Cost MINIDIP Package

• Low-Forward Voltage

• Parallelable for Lower V

F or Higher IF

• Fast Recovery Time

• Military Temperature Range Available

DESCRIPTIO N

This four-diod e array is designed for general purpose use as individual
diodes or as a high-speed, high-current bridge. It is particularly useful on
the outputs of high-speed power MOSFET drivers where Schottky diodes
are neede d to clamp any ne gative excursi ons caused by ringing on the
driven line.

These diodes are also ideally suited for use as voltage clamps when driv ­ing inductive loads such as relays and solenoids, and to provide a path
for current free-wheeling in motor drive applications.

The use of Schottky diode technology fea tures high efficiency through
lowered forward voltage drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both hermetic CERDIP and
copper-leaded p lasti c packa ges. The U C1611 in ceramic is desig ned for

-55°C to +1 25°C envi ronments bu t with redu ced p eak cu rrent cap abil ity:
while the UC3611 in plastic has higher current rating over a 0°C to +70°C
ambient temperature range.

Quad Schottky Diode Array

CONNECTION DIAGRAM

DIL-8 (TOP VIEW)
N or J Package

PLCC-20 (TOP VIEW)
Q Package

SOIC-16 (TOP VIEW )
DW Package

6/93

ABSOLUTE MAXI MUM RATING S

Peak Inverse Voltag e (per Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Diode-to-Diode V o ltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Peak Forwar d Curr ent

UC1611. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

UC3611. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Power Dissipat ion at T

A = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

Lead Temperature (Solderin g, 10 Sec onds ). . . . . . . . . . . . . . . . . . . . . . . +300°C

Note: Please consult Packaging Sectio n of Databook for therm al l imitat ions and

considerations of pac kage .

ELECTRICAL CHARACTERISTICS:

PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS

Forward Voltage Dro p I

F = 100mA 0.3 0.4 0.7 V

I

F = 1A 0.9 1.2 V

Leakage Current V

R = 40V 0.01 0.1 mA

V

R = 40V, TJ = +100°C 0.1 1.0 mA

Reverse Recovery 0.5A Forward to 0.5A Revers e 20 ns
Forward Recovery 1A Forward to 1.1V Recovery 40 ns
Junction Capacitance V

R = 5V 100 pF

Note: At Forward current s of gr eat er tha n 1.0A, a para sitic cu rrent of appr oxim at ely 10m A may be colle ct ed by adja cent diodes.

All specifications apply to each individual diode . TJ = +25°C except as noted.
TA = TJ.

UC1611
UC3611

Reverse Current vs V oltage Forward Curren t vs Voltage

2