Texas Instruments tps79301 SERVICE MANUAL
www.ti.com
324
5
DBV PACKAGE
(TOP VIEW)
1IN
GND
EN
OUT
BYPASS
Fixed Option
324
6
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
BYPASS
5
FB
Adjustable Option
TPS79328
RIPPLE REJECTION
vs
FREQUENCY
IN
EN
OUT
BYP
GND
YEQ
PACKAGE
(TOP VIEW)
10 100 1 k 10 k
10
40
80
100 k 1 M 10 M
Ripple Rejection − dB
f − Frequency − Hz
IO = 10 mA
50
0
VI = 3.8 V
Co = 10 µF
C
(byp)
= 0.01 µF
IO = 200 mA
20
30
60
70
90
100
A3 A1
C3 C1
B2
0
0.05
0.1
0.15
0.2
0.25
0.3
100 1 k 10 k 100 k
f − Frequency − Hz
IO = 1 mA
VI = 3.8 V
Co = 2.2 µF
C
(byp)
= 0.1 µF
IO = 200 mA
V/ HzOutput Spectral Noise Density −
µ
TPS79328
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
TPS79301, TPS79318
TPS79325, TPS79328, TPS793285
TPS79330, TPS79333, TPS793475
SLVS348G – JULY 2001 – REVISED JUNE 2004
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR
REGULATORS IN NANOSTAR™ WAFER CHIP SCALE AND SOT23
FEATURES DESCRIPTION
• 200-mA RF Low-Dropout Regulator
With Enable
• Available in 1.8-V, 2.5-V, 2.8-V, 2.85-V, 3-V,
3.3-V, 4.75-V, and Adj (1.22 V to 5.5 V)
• High PSRR (70 dB at 10 kHz)
• Ultralow Noise (32 µV)
• Fast Start-Up Time (50 µs)
• Stable With a 2.2-µF Ceramic Capacitor
• Excellent Load/Line Transient Response
• Very Low Dropout Voltage (112 mV at Full
Load, TPS79330)
• 5-Pin SOT23 (DBV) and NanoStar Wafer Chip
Scale (YEQ) Packages
APPLICATIONS
• RF: VCOs, Receivers, ADCs duced to less than 1 µA. The TPS79328 exhibits
• Audio
• Cellular and Cordless Telephones
• Bluetooth™, Wireless LAN
• Handheld Organizers, PDAs
The TPS793xx family of low-dropout (LDO)
low-power linear voltage regulators features high
power supply rejection ratio (PSRR), ultralow noise,
fast start-up, and excellent line and load transient
responses in NanoStar wafer chip scale and SOT23
packages. NanoStar packaging gives an ultrasmall
footprint as well as an ultralow profile and package
weight, making it ideal for portable applications such
as handsets and PDAs. Each device in the family is
stable, with a small 2.2-µF ceramic capacitor on the
output. The TPS793xx family uses an advanced,
proprietary BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 112 mV at 200
mA, TPS79330). Each device achieves fast start-up
times (approximately 50 µs with a 0.001-µF bypass
capacitor) while consuming very low quiescent current (170 µA typical). Moreover, when the device is
placed in standby mode, the supply current is re-
approximately 32 µV
of output voltage noise with
RMS
a 0.1-µF bypass capacitor. Applications with analog
components that are noise sensitive, such as portable
RF electronics, benefit from the high PSRR and
low-noise features as well as the fast response time.
Bluetooth is a trademark of Bluetooth Sig, Inc.
NANOSTAR is a trademark of Texas Instruments.
UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily
include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2001–2004, Texas Instruments Incorporated
www.ti.com
TPS79301, TPS79318
TPS79325, TPS79328, TPS793285
TPS79330, TPS79333, TPS793475
SLVS348G – JULY 2001 – REVISED JUNE 2004
AVAILABLE OPTIONS
T
J
-40°C to 125°C 2.8 V CSP (YEQ) TPS79328YEQ E2
(1) DBVR indicates tape and reel of 3000 parts. YEQR indicates tape and reel of 3000 parts. YEQT indicates tape and reel of 250 parts.
VOLTAGE PACKAGE PART NUMBER SYMBOL
1.22 to 5.5 V TPS79301DBVR PGVI
1.8 V TPS79318DBVR PHHI
1.8 V CSP (YEQ) TPS79318YEQ E3
2.5 V SOT23 (DBV) TPS79325DBVR PGWI
2.5 V CSP (YEQ) TPS79325YEQ E4
2.8 V SOT23 (DBV) TPS79328DBVR PGXI
2.85 V SOT23 (DBV) TPS793285DBVR PHII
2.85 V CSP (YEQ) TPS793285YEQ E5
3 V SOT23 (DBV) TPS79330DBVR PGYI
3 V CSP (YEQ) TPS79330YEQ E6
3.3 V TPS79333DBVR PHUI
4.75 V TPS793475DBVR PHJI
SOT23 (DBV)
SOT23 (DBV)
(1)
ABSOLUTE MAXIMUM RATINGS
over operating temperature range (unless otherwise noted)
VINrange -0.3 V to 6 V
V
range -0.3 V to VIN+ 0.3 V
EN
V
range -0.3 V to 6 V
OUT
Peak output current Internally limited
ESD rating, HBM 2 kV
ESD rating, CDM 500 V
Continuous total power dissipation See Dissipation Ratings Table
Operating junction temperature range, DBV package -40°C to 150°C
Operating junction temperature range, YEQ package -40°C to 125°C
Storage temperature range, T
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
stg
(1)
UNIT
-65°C to 150°C
DISSIPATION RATINGS TABLE
BOARD PACKAGE R
(1)
Low-K
(2)
High-K
(1)
Low-K
(2)
High-K
(1) The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top
of the board.
(2) The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and
ground planes and 2 ounce copper traces on top and bottom of the board.
DBV 65°C/W 255°C/W 3.9 mW/°C 390 mW 215 mW 155 mW
DBV 65°C/W 180°C/W 5.6 mW/°C 560 mW 310 mW 225 mW
YEQ 27°C/W 255°C/W 3.9 mW/°C 390 mW 215 mW 155 mW
YEQ 27°C/W 190°C/W 5.3 mW/°C 530 mW 296 mW 216 mW
ΘJC
R
ΘJA
DERATING FACTOR TA≤ 25°C TA= 70°C TA= 85°C
ABOVE TA= 25°C POWER POWER POWER
RATING RATING RATING
2
www.ti.com
TPS79325, TPS79328, TPS793285
TPS79330, TPS79333, TPS793475
SLVS348G – JULY 2001 – REVISED JUNE 2004
TPS79301, TPS79318
ELECTRICAL CHARACTERISTICS
over recommended operating temperature range TJ= -40 to 125 °C, V
C
OUT
= 10 µF, C
= 0.01 µF (unless otherwise noted). Typical values are at 25°C.
BYPASS
EN
= VIN, V
= V
IN
OUT(nom)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VINInput voltage
I
Continuous output current 0 200 mA
OUT
V
Internal reference (TPS79301) 1.201 1.225 1.250 V
FB
Output voltage range (TPS79301) V
(1)
2.7 5.5 V
FB
TJOperating junction temperature -40 125 °C
TPS79318 0 µA < I
TPS79325 0 µA < I
TPS79328 0 µA < I
Output voltage TPS793285 0 µA < I
TPS79330 0 µA < I
TPS79333 0 µA ≤ I
TPS793475 0 µA < I
Quiescent current (GND current) 0 µA < I
Load regulation (∆V
Line regulation (∆V
Output noise voltage (TPS79328) µV
%/I
OUT
OUT
) 0 µA < I
OUT
(1)
%/V
)
IN
V
OUT
BW = 200 Hz to 100 kHz,
I
OUT
Time, start-up (TPS79328) RL= 14 Ω, C
Output current limit V
Standby current V
OUT
EN
< 200 mA, 2.8 V < VIN< 5.5 V 1.764 1.8 1.836 V
OUT
< 200 mA, 3.5 V < VIN< 5.5 V 2.45 2.5 2.55 V
OUT
< 200 mA, 3.8 V < VIN< 5.5 V 2.744 2.8 2.856 V
OUT
< 200 mA, 3.85 V < VIN< 5.5 V 2.793 2.85 2.907 V
OUT
< 200 mA, 4 V < VIN< 5.5 V 2.94 3 3.06 V
OUT
< 200 mA, 4.3 V < VIN< 5.5 V 3.234 3.3 3.366 V
OUT
< 200 mA, 5.25 V < VIN< 5.5 V 4.655 4.75 4.845 V
OUT
< 200 mA 170 220 µA
OUT
< 200 mA, TJ= 25°C 5 mV
OUT
+ 1 V < VIN≤ 5.5 V 0.05 0.12 %/V
= 200 mA
OUT
C
C
C
C
C
= 1 µF C
C
= 0.001 µF 55
BYPASS
= 0.0047 µF 36
BYPASS
= 0.01 µF 33
BYPASS
= 0.1 µF 32
BYPASS
= 0.001 µF 50
BYPASS
= 0.0047 µF 70 µs
BYPASS
= 0.01 µF 100
BYPASS
= 0 V 285 600 mA
= 0 V, 2.7 V < VIN< 5.5 V 0.07 1 µA
High level enable input voltage 2.7 V < VIN< 5.5 V 1.7 V
Low level enable input voltage 2.7 V < VIN< 5.5 V 0 0.7 V
Input current (EN) V
= 0 -1 1 µA
EN
Input current (FB) (TPS79301) FB = 1.8 V 1 µA
f = 100 Hz, TJ= 25°C, I
Power supply ripple rejection TPS79328 dB
f = 100 Hz, TJ= 25°C, I
f = 10 kHz, TJ= 25°C, I
f = 100 kHz, TJ= 25°C, I
TPS79328 I
Dropout voltage
(V
= V
IN
OUT(typ)
(2)
- 0.1V)
TPS793285 I
TPS79330 I
TPS79333 I
TPS793475 I
UVLO threshold V
= 200 mA 120 200
OUT
= 200 mA 120 200
OUT
= 200 mA 112 200 mV
OUT
= 200 mA 102 180
OUT
= 200 mA 77 125
OUT
rising 2.25 2.65 V
CC
= 10 mA 70
OUT
= 200 mA 68
OUT
= 200 mA 70
OUT
= 200 mA 43
OUT
UVLO hysteresis 100 mV
+ 1 V
(1)
, I
= 1 mA,
OUT
5.5 - V
DO
IN
V
RMS
V
(1) Minimum VIN is 2.7 V or V
(2) Dropout is not measured for the TPS79318 and TPS79325 since minimum VIN= 2.7 V.
+ VDO, whichever is greater.
OUT
3
www.ti.com
_
+
Thermal
Shutdown
Bandgap
Reference
1.22V
Current
Sense
R2
GND
EN
SHUTDOWN
V
ref
UVLO
ILIM
External to
the Device
R1
UVLO
2.45V
250 kΩ
Bypass
FB
59 k
QuickStart
OUTIN
IN
_
+
Thermal
Shutdown
Current
Sense
R1
R2
GND
EN
SHUTDOWN
V
ref
UVLO
ILIM
250 kΩ
Bypass
QuickStart
Bandgap
Reference
1.22V
UVLO
2.45V
R2 = 40 k
IN
IN OUT
TPS79301, TPS79318
TPS79325, TPS79328, TPS793285
TPS79330, TPS79333, TPS793475
SLVS348G – JULY 2001 – REVISED JUNE 2004
ADJUSTABLE VERSION
FUNCTIONAL BLOCK DIAGRAMS
FIXED VERSION
Terminal Functions
TERMINAL
NAME
BYPASS 4 4 B2
GND 2 2 A1 Regulator ground
OUT 6 5 C1 Output of the regulator.
4
SOT23 SOT23 CSP
ADJ FIXED FIXED
An external bypass capacitor, connected to this terminal in conjunction with an internal resistor,
EN 3 3 A3 high, the device will be enabled. When the device goes to a logic low, the device is in shutdown
FB 5 N/A N/A This terminal is the feedback input voltage for the adjustable device.
IN 1 1 C3 Unregulated input to the device.
creates a low-pass filter to further reduce regulator noise.
The EN terminal is an input which enables or shuts down the device. When EN goes to a logic
mode.
DESCRIPTION
www.ti.com
2.795
2.796
2.797
2.798
2.799
2.8
2.801
2.802
2.803
2.804
2.805
0 50 100 150 200
I
O
− Output Current − mA
VI = 3.8 V
Co = 10 µF
TJ = 25° C
− Output Voltage − V
V
O
2.775
2.78
2.785
2.79
2.795
2.8
2.805
−40−25−10 5 20 35 50 65 80 95 110 125
T
J
− Junction Temperature − °C
− Output Voltage − V
V
O
IO = 200 mA
IO = 1 mA
VI = 3.8 V
Co = 10 µF
0
50
100
150
200
250
−40−25−10 5 20 35 50 65 80 95 110125
T
J
− Junction Temperature − °C
Ground Current − Aµ
IO = 1 mA
VI = 3.8 V
Co = 10 µF
IO = 200 mA
0
0.05
0.1
0.15
0.2
0.25
0.3
100 1 k 10 k 100 k
f − Frequency − Hz
IO = 1 mA
VI = 3.8 V
Co = 2.2 µF
C
(byp)
= 0.1 µF
IO = 200 mA
V/ HzOutput Spectral Noise Density −
µ
0
0.05
0.1
0.15
0.2
0.25
0.3
100 1 k 10 k 100 k
V/ HzOutput Spectral Noise Density −
µ
f − Frequency − Hz
IO = 1 mA
IO = 200 mA
VI = 3.8 V
Co = 10 µF
C
(byp)
= 0.1 µF
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
100 1 k 10 k 100 k
f − Frequency − Hz
V/ HzOutput Spectral Noise Density −
VI = 3.8 V
IO = 200 mA
Co= 10 µF
C
(byp)
= 0.1 µF
C
(byp)
= 0.001 µF
µ
C
(byp)
= 0.0047 µF
C
(byp)
= 0.01 µF
100 1 M10 1 k
f − Frequency − Hz
10 k
− Output Impedance −Z
o
Ω
100 k
IO = 1 mA
0
0.5
1
1.5
2
2.5
0
IO = 100 mA
10 M
VI = 3.8 V
Co = 10 µF
TJ = 25° C
0
20
40
60
80
100
120
140
160
180
−40−25−10 5 20 35 50 65 80 95 110 125
IO = 200 mA
IO = 10 mA
VI = 2.7 V
Co = 10 µF
T
J
− Junction Temperature − °C
− Dropout Voltage − mV
V
DO
0.001 0.01 0.1
C
(byp)
− Bypass Capacitance − µF
0
10
20
30
40
50
60
VO = 2.8 V
IO = 200 mA
Co = 10 µF
BW = 100 Hz to
100 kHz
RMS − Root Mean Squared Output Noise − V
(RMS)
TPS79301, TPS79318
TPS79325, TPS79328, TPS793285
TPS79330, TPS79333, TPS793475
SLVS348G – JULY 2001 – REVISED JUNE 2004
TYPICAL CHARACTERISTICS (SOT23 PACKAGE)
TPS79328 TPS79328 TPS79328
OUTPUT VOLTAGE OUTPUT VOLTAGE GROUND CURRENT
OUTPUT CURRENT JUNCTION TEMPERATURE JUNCTION TEMPERATURE
vs vs vs
Figure 1. Figure 2. Figure 3.
OUTPUT SPECTRAL NOISE DEN- OUTPUT SPECTRAL NOISE DEN- OUTPUT SPECTRAL NOISE DEN-
TPS79328 TPS79328 TPS79328
SITY SITY SITY
vs vs vs
FREQUENCY FREQUENCY FREQUENCY
Figure 4. Figure 5. Figure 6.
ROOT MEAN SQUARE OUTPUT TPS79328
NOISE OUTPUT IMPEDANCE DROPOUT VOLTAGE
vs vs vs
BYPASS CAPACITANCE FREQUENCY JUNCTION TEMPERATURE
Figure 7. Figure 8. Figure 9.
5
Loading...