TEXAS INSTRUMENTS TPS79301, TPS79318, TPS79325, TPS79328, TPS793285 Technical data

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324

DBV PACKAGE

(TOP VIEW)

1IN

GND

OUT

Fixed Option

324

DBV PACKAGE

(TOP VIEW)

GND

OUT

Adjustable Option

TPS79328

RIPPLE REJECTION

FREQUENCY

OUT

GND

YEQ

PACKAGE

(TOP VIEW)

10 100 1 k 10 k

100 k 1 M 10 M

Ripple Rejection (dB)

Frequency (Hz)

OUT

= 10 mA

VIN = 3.8 V C

OUT

= 10 µF

CNR = 0.01 µF

OUT

= 200 mA

100

A3 A1

C3 C1

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 2.2 µF

= 0.1 µF

OUT

= 200 mA

TPS79328

OUTPUT SPECTRAL NOISE DENSITY

FREQUENCY

Output Spectral Noise Density (µV/√Hz)

TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR

REGULATORS IN NanoStar™ WAFER CHIP SCALE AND SOT23

FEATURES DESCRIPTION

• 200-mA RF Low-Dropout Regulator

With Enable

• Available in 1.8-V, 2.5-V, 2.8-V, 2.85-V, 3-V,

3.3-V, 4.75-V, and Adjustable (1.22-V to 5.5-V)

• High PSRR (70 dB at 10 kHz)

• Ultralow-Noise (32 µV

, TPS79328)

RMS

• Fast Start-Up Time (50 µs)

• Stable With a 2.2-µF Ceramic Capacitor

• Excellent Load/Line Transient Response

• Very Low Dropout Voltage (112 mV at Full

Load, TPS79330)

• 5- and 6-Pin SOT23 (DBV) and NanoStar Wafer

Chip Scale (YEQ) Packages

APPLICATIONS

• RF: VCOs, Receivers, ADCs is reduced to less than 1 µA. The TPS79328 exhibits

• Audio

• Cellular and Cordless Telephones

• Bluetooth™, Wireless LAN

• Handheld Organizers, PDAs

The TPS793xx family of low-dropout (LDO) low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow-noise, fast start-up, and excellent line and load transient responses in NanoStar wafer chip scale and SOT23 packages. NanoStar packaging gives an ultrasmall footprint as well as an ultralow profile and package weight, making it ideal for portable applications such as handsets and PDAs. Each device in the family is stable, with a small 2.2-µF ceramic capacitor on the output. The TPS793xx family uses an advanced, proprietary BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 112 mV at 200 mA, TPS79330). Each device achieves fast start-up times (approximately 50 µs with a 0.001-µF bypass capacitor) while consuming very low quiescent current (170 µA typical). Moreover, when the device is placed in standby mode, the supply current

approximately 32 µV

of output voltage noise at

RMS

2.8-V output with a 0.1-µF bypass capacitor. Applications with analog components that are noise-sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features as well as the fast response time.

Bluetooth is a trademark of Bluetooth Sig, Inc. NanoStar is a trademark of Texas Instruments.

UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Figure 1.

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TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

AVAILABLE OPTIONS

PRODUCT VOLTAGE PACKAGE T

TPS79301 1.22 V to 5.5 V SOT23 (DBV) PGVI TPS79301DBVR

TPS79318 1.8 V

TPS79325 2.5 V

TPS79328 2.8 V

TPS793285 2.85 V

TPS79330 3 V

TPS79333 3.3 V SOT23 (DBV) PHUI TPS79333DBVR

TPS793475 4.75 V SOT23 (DBV) PHJI TPS793475DBVR

(1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet. (2) DBV R indicates tape and reel of 3000 parts. YEQ R indicates tape and reel of 3000 parts. YEQ T indicates tape and reel of 250 parts.

SOT23 (DBV) PHHI TPS79318DBVR

CSP (YEQ) E3 TPS79318YEQ

SOT23 (DBV) PGWI TPS79325DBVR

CSP (YEQ) E4 TPS79325YEQ

SOT23 (DBV) PGXI TPS79328DBVR

CSP (YEQ) -40 ° C to +125 ° C E2 TPS79328YEQ

SOT23 (DBV) PHII TPS793285DBVR

CSP (YEQ) E5 TPS793285YEQ

SOT23 (DBV) PGYI TPS79330DBVR

CSP (YEQ) E6 TPS79330YEQ

(1) (2)

SYMBOL PART NUMBER

ABSOLUTE MAXIMUM RATINGS

over operating temperature range (unless otherwise noted)

VINrange -0.3 V to 6 V V

range -0.3 V to VIN+ 0.3 V

range -0.3 V to 6 V

OUT

Peak output current Internally limited ESD rating, HBM 2 kV ESD rating, CDM 500 V Continuous total power dissipation See Dissipation Ratings Table Junction temperature range, DBV package -40 ° C to 150 ° C Junction temperature range, YEQ package -40 ° C to 125 ° C Storage temperature range, T

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

stg

(1)

UNIT

-65 ° C to 150 ° C

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TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

DISSIPATION RATINGS TABLE

BOARD PACKAGE R

(1)

Low-K

(2)

High-K

(1)

Low-K

(2)

High-K

DBV 65 ° C/W 255 ° C/W 3.9 mW/ ° C 390 mW 215 mW 155 mW DBV 65 ° C/W 180 ° C/W 5.6 mW/ ° C 560 mW 310 mW 225 mW YEQ 27 ° C/W 255 ° C/W 3.9 mW/ ° C 390 mW 215 mW 155 mW YEQ 27 ° C/W 190 ° C/W 5.3 mW/ ° C 530 mW 296 mW 216 mW

θ JC

θ JA

ABOVE TA= 25 ° C RATING RATING RATING

(1) The JEDEC low-K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top

of the board.

(2) The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and

ground planes and 2 ounce copper traces on top and bottom of the board.

ELECTRICAL CHARACTERISTICS

DERATING FACTOR POWER POWER POWER

over recommended operating temperature range TJ= -40 to 125 ° C, V C

= 10 µF, C

OUT

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VINInput voltage I

Continuous output current 0 200 mA

OUT

Internal reference (TPS79301) 1.201 1.225 1.250 V

Output voltage range (TPS79301) V

Output voltage TPS793285 0 µA < I

Line regulation ( ∆ V Load regulation ( ∆ V

Dropout voltage (V

= V

OUT(nom)

Output current limit V GND pin current 0 µA < I Shutdown current FB pin current V

Power-supply ripple rejection TPS79328 dB

Output noise voltage (TPS79328) µV

= 0.01 µF (unless otherwise noted). Typical values are at 25 ° C.

(1)

TPS79318 0 µA < I TPS79325 0 µA < I TPS79328 0 µA < I

TPS79330 0 µA < I TPS79333 0 µA ≤ I TPS793475 0 µA < I

%/ ∆ VIN)

OUT

(2)

- 0.1V)

(3)

(1)

%/ ∆ I

) 0 µA < I

OUT

TPS79328 I TPS793285 I TPS79330 I TPS79333 I TPS793475 I

OUT

OUT OUT OUT OUT OUT

OUT

EN FB

< 200 mA, 2.8 V < VIN< 5.5 V 1.764 1.8 1.836 V

OUT

< 200 mA, 3.5 V < VIN< 5.5 V 2.45 2.5 2.55 V

OUT

< 200 mA, 3.8 V < VIN< 5.5 V 2.744 2.8 2.856 V

OUT

< 200 mA, 3.85 V < VIN< 5.5 V 2.793 2.85 2.907 V

OUT

< 200 mA, 4 V < VIN< 5.5 V 2.94 3 3.06 V

OUT

< 200 mA, 4.3 V < VIN< 5.5 V 3.234 3.3 3.366 V

OUT

< 200 mA, 5.25 V < VIN< 5.5 V 4.655 4.75 4.845 V

OUT

+ 1 V < VIN≤ 5.5 V 0.05 0.12 %/V

< 200 mA, TJ= 25 ° C 5 mV

OUT

= 200 mA 120 200 = 200 mA 120 200 = 200 mA 112 200 mV = 200 mA 102 180 = 200 mA 77 125

= 0 V 285 600 mA

< 200 mA 170 220 µA

OUT

= 0 V, 2.7 V < VIN< 5.5 V 0.07 1 µA

= 1.8 V 1 µA f = 100 Hz, TJ= 25 ° C, I f = 100 Hz, TJ= 25 ° C, I f = 10 kHz, TJ= 25 ° C, I f = 100 kHz, TJ= 25 ° C, I

BW = 200 Hz to 100 kHz, I

= 200 mA

OUT

OUT OUT OUT OUT

TA≤ 25 ° C TA= 70 ° C TA= 85 ° C

= VIN, V

= V

OUT(nom)

+ 1 V

(1)

, I

OUT

2.7 5.5 V

= 10 mA 70 = 200 mA 68 = 200 mA 70 = 200 mA 43 = 0.001 µF 55 = 0.0047 µF 36 = 0.01 µF 33 = 0.1 µF 32

= 1 mA,

5.5 - V

RMS

(1) Minimum VINis 2.7 V or V (2) Dropout is not measured for the TPS79318 and TPS79325 since minimum VIN= 2.7 V. (3) For adjustable versions, this applies only after VINis applied; then V

+ VDO, whichever is greater.

OUT

transitions high to low.

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TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

ELECTRICAL CHARACTERISTICS (continued)

over recommended operating temperature range TJ= -40 to 125 ° C, V C

= 10 µF, C

OUT

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Time, start-up (TPS79328) RL= 14 Ω , C

High level enable input voltage 2.7 V < VIN< 5.5 V 1.7 V Low level enable input voltage 2.7 V < VIN< 5.5 V 0 0.7 V EN pin current V UVLO threshold V UVLO hysteresis 100 mV

= 0.01 µF (unless otherwise noted). Typical values are at 25 ° C.

= 1 µF C

OUT

= 0 -1 1 µA

rising 2.25 2.65 V

= VIN, V

= 0.001 µF 50

= 0.0047 µF 70 µs

= 0.01 µF 100

= V

OUT(nom)

+ 1 V, I

= 1 mA,

OUT

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ADJUSTABLE VERSION

Thermal

Shutdown

Bandgap

Reference

1.22V

Current

Sense

GND

SHUTDOWN

ref

UVLO

ILIM

External to the Device

UVLO

2.45V

250 kΩ

59 k

QuickStart

OUTIN

Thermal

Shutdown

Current

Sense

GND

SHUTDOWN

ref

UVLO

ILIM

250 kΩ

QuickStart

Bandgap

Reference

1.22V

UVLO

2.45V

R2 = 40 kΩ

IN OUT

TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

FUNCTIONAL BLOCK DIAGRAMS

FIXED VERSION

Terminal Functions

TERMINAL

NAME

GND 2 2 A1 Regulator ground

OUT 6 5 C1 Output of the regulator.

SOT23 SOT23 WCSP

ADJ FIXED FIXED

NR 4 4 B2

EN 3 3 A3

FB 5 N/A N/A This terminal is the feedback input voltage for the adjustable device.

IN 1 1 C3 Unregulated input to the device.

Connecting an external capacitor to this pin bypasses noise generated by the internal bandgap. This improves power-supply rejection and reduces output noise.

Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into shutdown mode. EN can be connected to IN if not used.

DESCRIPTION

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2.795

2.796

2.797

2.798

2.799

2.800

2.801

2.802

2.803

2.804

2.805

0 50 100 150 200

OUT

(mA)

VIN = 3.8 V C

OUT

= 10 µF

TJ = 25°C

OUT

(V)

100

150

200

250

−40−25−10 5 20 35 50 65 80 95 110125

(°C)

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 10 µF

OUT

= 200 mA

GND

(µA)

2.775

2.780

2.785

2.790

2.795

2.800

2.805

−40−25−10 5 20 35 50 65 80 95 110 125

(°C)

OUT

= 200 mA

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 10 µF

OUT

(V)

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

OUT

= 1 mA

VIN = 3.8 V C

OUT

= 2.2 µF

= 0.1 µF

OUT

= 200 mA

Output Spectral Noise Density (µV/√Hz)

0.05

0.10

0.15

0.20

0.25

0.30

100 1 k 10 k 100 k

Frequency (Hz)

OUT

= 1 mA

OUT

= 200 mA

VIN = 3.8 V C

OUT

= 10 µF

= 0.1 µF

Output Spectral Noise Density (µV/√Hz)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100 1 k 10 k 100 k

Frequency (Hz)

VIN = 3.8 V I

OUT

= 200 mA

OUT

= 10 µF

CNR = 0.1 µF

CNR = 0.001 µF

CNR = 0.0047 µF

CNR = 0.01 µF

Output Spectral Noise Density (µV/√Hz)

100 1 M10 1 k

Frequency (Hz)

10 k 100 k

OUT

= 1 mA

0.5

1.0

1.5

2.0

2.5

OUT

= 100 mA

10 M

VIN = 3.8 V C

OUT

= 10 µF

TJ = 25° C

ZO (Ω)

100

120

140

160

180

−40−25−10 5 20 35 50 65 80 95 110125

OUT

= 200 mA

OUT

= 10 mA

VIN = 2.7 V C

OUT

= 10 µF

(°C)

(mV)

0.001 0.01 0.1

(µF)

OUT

= 2.8 V

OUT

= 200 mA

OUT

= 10 µF

BW = 100 Hz to 100 kHz

RMS, Output Noise (V

RMS

)

TPS79301, TPS79318 TPS79325, TPS79328, TPS793285 TPS79330, TPS79333, TPS793475

SLVS348H – JULY 2001 – REVISED OCTOBER 2004

TYPICAL CHARACTERISTICS (SOT23 PACKAGE)

TPS79328 TPS79328 TPS79328

OUTPUT VOLTAGE OUTPUT VOLTAGE GROUND CURRENT OUTPUT CURRENT JUNCTION TEMPERATURE JUNCTION TEMPERATURE

vs vs vs

Figure 2. Figure 3. Figure 4.

TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRAL TPS79328 OUTPUT SPECTRAL

NOISE DENSITY NOISE DENSITY NOISE DENSITY

vs vs vs

FREQUENCY FREQUENCY FREQUENCY

Figure 5. Figure 6. Figure 7.

ROOT MEAN SQUARE OUTPUT TPS79328

NOISE OUTPUT IMPEDANCE DROPOUT VOLTAGE

vs vs vs

FREQUENCY JUNCTION TEMPERATURE

Figure 8. Figure 9. Figure 10.

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