•5 V to 24 V Input Voltage•Driver for Input/Output Isolation PFET
•Integrated 1.5 A 40 V MOSFET•True Shutdown
•1.0 MHz/1.3 MHz Switching Frequency•Over Voltage Protection
•Boost Output Auto-Adaptive to WLED Voltages•WLED Open/Short Protection
•Small External Components•Built-in Soft Start
•Integrated Loop Compensation•16L 3 mm×3 mm QFN
•Six Current Sink of 25 mA
•Up to 10 WLED in Series
•Less Than 3% Current Matching and Accuracy
•Up to 1000:1 PWM Brightness DImming Range
•Minimized Output Ripple Under PWM Dimming
DESCRIPTION
The TPS61180/1/2 ICs provide highly integrated solutions for media size LCD backlight. These devices have a
built-in high efficiency boost regulator with integrated 1.5A/40V power MOSFET. The six current sink regulators
provide high precision current regulation and matching. In total, the device can support up to 60 WLED. In
addition, the boost output automatically adjusts its voltage to the WLED forward voltage to improve efficiency.
The devices support pulse width modulation (PWM) brightness dimming. During dimming, the WLED current is
turned on/off at the duty cycle and frequency determined by the PWM signal input on the DCRTL pin. One
potential issue of PWM dimming is audible noises from the output ceramic capacitors. The TPS61180/1/2 family
is designed to minimize this output AC ripple across a wide dimming duty cycle and frequency range; therefore,
reducing the audible noise.
The TPS61180/1/2 ICs provide a driver output for an external PFET connected between the input and inductor.
During short circuit or over-current conditions, the ICs turn off the external PFET and disconnect the battery from
the WLEDs. The PFET is also turned off during IC shutdown (true shutdown) to prevent any leakage current of
the battery. The device also integrates over-voltage protection, soft-start and thermal shutdown.
The TPS61180 IC requires external 3.3V IC supply, while TPS61181 and TPS61182 ICs have a built-in linear
regulator for the IC supply. All the devices are in a 3×3 mm QFN package.
APPLICATIONS
•Notebook LCD Display Backlight
•UMPC LCD Display Backlight
•Backlight for Media Form Factor LCD display
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
1PGNDIPower ground of the IC. Internally, it connects to the source of the PWM switch.
2SWIThis pin connects to the drain of the internal PWM switch, external Schottky diode and inductor.
3V
4V
5ISETIThe resistor on this pin programs the WLED output current.
6CinISupply voltage of the IC. For TPS61181/2, it is the output of the internal LDO. Connect 0.1 μF bypass
7, 8, 9IFB1-IFB3ICurrent sink regulation inputs. They are connected to the cathode of WLEDs. The PWM loop regulates
12, 13, 14 IFB4-IFB6the lowest V
10GNDISignal ground of the IC.
11DCTRLIDimming control logic input. The dimming frequency range is 100 Hz to 1 kHz.
15ENIThe enable pin to the IC. For TPS61181/2, a logic high signal turns on the internal LDO and enables the
16FaultIGate driver output for an external PFET used for fault protection. It can also be used as signal output for
BAT
O
IThis pin is connected to the battery supply. It provides the pull-up voltage for the Fault pin and battery
voltage signal. For TPS61181/2, this is also the input to the internal LDO.
OThis pin monitors the output of the boost regulator. Connect this pin to the anode of the WLED strings.
capacitor to this pin. For TPS61180, connect an external 3.3 V supply to power the IC.
to 400 mV. Each channel is limited to 25 mA current.
IFB
IC. Therefore, do not connect the EN pin to the Cin pin.
over operating free-air temperature range (unless otherwise noted)
Voltages on pin V
Voltage on pin Cin
BAT
(2)
and Fault
Voltage on pin SW and V
Voltage on pin IFB1 to IFB6
Voltage on all other pins
Continuous power dissipationSee Dissipation Rating Table
Operating junction temperature range–40 to 150°C
Storage temperature range–65 to 150°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
DISSIPATION RATINGS
TPS61180/1/2RTE
TPS61180/1/2RTE
(1) The JEDEC low-K (1s) board used to derive this data was a 3in×3in, two-layer board with 2-ounce copper traces on top of the board.
PACKAGER
(2) The JEDEC high-K (2s2p) board used to derive this data was a 3in×3in, multilayer board with 1-ounce internal power and ground.
= 10.8 V, 0.1 μF at Cin, EN = Logic High, IFB current = 15m A, IFB voltage = 500 mV, TA= –40°C to 85°C, typical
BAT
values are at TA= 25°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V
start_r
I
LN_NFET
OSCILLATOR
f
S
D
max
D
min
OS, SC, OVP AND SS
I
LIM
V
ovp
V
ovp_IFB
V
sc
V
sc_dly
V
IFB_nouse
Fault OUTPUT
V
fault_high
V
fault_low
THERMAL SHUTDOWN
T
shutdown
T
hysteresis
Isolation FET start up thresholdVIN–VO, VOramp up1.22V
PWM FET leakage currentVSW= 35 V, TA= 25°C1μA
Oscillator frequencyMHz
TPS611821.21.31.5
TPS61180/10.91.01.2
Maximum duty cycleIFB = 0 V8594%
Minimum duty cycle%
N-Channel MOSFET current limitD = D
TPS611828
TPS61180/17
max
1.53A
VOovervoltage thresholdMeasured on the VOpin383940V
IFB overvoltage thresholdMeasured on the IFBx pin151720V
Short circuit detection thresholdVIN-VO, VOramp down1.72.5V
Short circuit detection delay during start up32ms
IFB no use detection thresholdTPS61180 Only0.6V
Fault high voltageMeasured as V
Fault low voltageMeasured as V