TEXAS INSTRUMENTS TPS61045 Technical data

www.ti.com

1 M

C1

100 nF

C3

L

VIN

SW
DO

FB

L1

D1
MBR0530

GND

CTRL

PGND

Enable / LCD bias control

C2

4.7uF

R2

R1

R3

Cff
22 pF

4.7 H

2.2 M
1 F

V

O

16.2 V to 18.9 V/ 10 mA

180 k

VCC = 1.8 V to 6 V

1
2

5
6

8

3

4
7

DIGITALLY ADJUSTABLE LCD BOOST CONVERTER

FEATURES DESCRIPTION

• Input Voltage Range . . . 1.8 V to 6.0 V

• Up to 85% Efficiency

• Digitally Adjustable Output Voltage Control

• Disconnects Output From Input During

Shutdown

• Switching Frequency . . . Up to 1 MHz

• No Load Quiescent Current . . . 40 µA Typ

• Thermal Shutdown Mode

• Shutdown Current . . . 0.1 µA Typ

• Available in Small 3mm × 3mm QFN package

APPLICATIONS

• LCD Bias Supply For Small to Medium LCD

Displays

• OLED Display Power Supply

– PDA, Pocket PC, Smart Phones
– Handheld Devices
– Cellular Phones

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

The TPS61045 is a high frequency boost converter
with digitally programmable output voltage and true
shutdown. During shutdown the output is
disconnected from the input by opening the internal
input switch. This allows a controlled power up/down
sequencing of the display. The output voltage can be
increased or decreased in digital steps by applying a
logic signal to the CTRL pin. The output voltage
range, as well as the output voltage step size, can be
programmed with the feedback divider network. With
a high switching frequency of up to 1 MHz the
TPS61045 allows the use of small external
components and together, with the small 8-pin QFN
package, a minimum system solution size is
achieved.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Figure 1. Typical Application

Copyright © 2003, Texas Instruments Incorporated

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

www.ti.com

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

T

A

8 Pin QFN Package (DRB) Package Marking

(1)

-40 °C to 85 °C TPS61045DRB BHT

(1) The DRB package is available taped and reeled. Add R suffix (TPS61045DRBR) to order quantities of 3000 units per reel. Add T suffix

(TPS61045DBRT) to order quaqntities of 250 units per reel.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)

Supply voltage, V
Voltages, V
Voltage, V

(CTRL)

(SW)

Continuous power dissipation See Dissipation Rating Table
Operating junction temperature range -40 ° C to 150 ° C
Storage temperature range, T
Lead temperature (soldering, 10 sec) 260 ° C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

(2)

(VIN)

, V

, V

(FB)

(2)

(L)

(2)

, V

(DO)

STG

(1)

TPS61045

-0.3 V to 7 V

-0.3 V to VI+ 0.3 V
30 V

-65 ° C to 150 ° C

DISSIPATION RATING

PACKAGE TA≤25 °C POWER DERATING FACTOR TA= 70 °C POWER TA= 85 °C POWER

8 pin QFN (DRB)

(1)

(1) The thermal resistance junction to ambient of the 8 pin QFN package is 270 °C/W. Standard 2 layer PCB without vias for the thermal

pad. See the appliction section on how to improve the thermal resistance R

RATING ABOVE TA= 25 °C RATING RATING

370 mW 3.7 mW/ ° C 204 mW 148 mW

.

ΘJA

RECOMMENDED OPERATING CONDITIONS

MIN TYP MAX UNIT

V

(VIN)

V

(SW)

L Inductor
f Switching frequency
C

I(C2)

C

O(C3)

T

A

T

J

Input voltage range 1.8 6.0 V
Switch voltage 30 V

(1)

(1)

Input capacitor (C2)
Output capacitor (C3)

(1)

(1)

Operating ambient temperature -40 85 °C
Operating junction temperature -40 125 °C

(1) See application section for further information.

ELECTRICAL CHARACTERISTICS

VI= 2.4 V, CTRL = VI, VO= 18.0 V, IO= 10 mA, TA= -40 °C to 85 °C, typical values are at TA= 25 ° C (unless otherwise
noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Supply current

V

I

2

Input voltage range 1.8 6.0 V

Submit Documentation Feedback

4.7 µH
1 MHz

4.7 µF

1 µF

www.ti.com

SW

8

PGND7

GND6

CTRL

5

L

DRB PACKAGE

(TOP VIEW)

1

VIN 2

DO 3

FB

4

Exposed

Thermal

Die Pad

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

ELECTRICAL CHARACTERISTICS (continued)

VI= 2.4 V, CTRL = VI, VO= 18.0 V, IO= 10 mA, TA= -40 °C to 85 °C, typical values are at TA= 25 ° C (unless otherwise
noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I

Q

I

O(SD)

V

UVLO

CTRL and DAC output

V

IH

V

IL

I

lkg

V

O(DO)

V

O(DO)

I

O(SINK)

t

(UP)

t

(DWN)

t

d1

t

(OFF)

Input switch (Q1), main switch (Q2) and current limit

V

SW(Q2)

r

ds(ON)

I

lkg(MAIN)

I

(LIM)

r

ds(ON)

I

lkg(IN)

Output

V

O

V

ref

I

(FB)

V

(FB)

Operating quiescent current IO= 0 mA, not switching 40 65 µA
Shutdown current CTRL = GND 0.1 1 µA
Under-voltage lockout threshold VIfalling 1.5 1.7 V

CTRL high level input voltage 1.3 V
CTRL low level input voltage 0.3 V
CTRL input leakage current CTRL = GND or VIN 0.1 µA
DAC output voltage range 0 1.233 V
DAC resolution 6 Bit 19.6 mV
DAC center output voltage CTRL = high 607 mV
Maximum DAC sink current 30 µA
Increase output voltage one step CTRL = high to low 1 60 µs
Decrease the output voltage one step CTRL = high to low 140 240 µs
Delay time between up/down steps CTRL = low to high 1 µs
Shutdown CTRL = high to low 560 µs

Main switch maximum voltage (Q2) 30 V
Main switch MOSFET on-resistance VI= 2.4 V; IS= 200 mA 400 800 m Ω
Main switch MOSFET leakage current VS= 28 V 0.1 10 µA
Main switch MOSFET current limit 300 375 450 mA
Input switch MOSFET on-resistance VI= 2.4 V; IS= 200 mA 1 2 Ω
Input switch MOSFET leakage current VL = GND, VI= 6 V 0.1 10 µA

Output voltage range Vin 28 V
Internal voltage reference 1.233 V
Feedback input bias current VFB = 1.3 V 30 100 nA
Feedback trip point voltage 1.8 V ≤ VI≤ 6.0 V; VO= 18 V, I

mA

= 10 1.208 1.233 1.258 V

(LOAD)

TPS61045

The Exposed Thermal Die Pad is connected to PGND. Connect this pad directly with the GND pin.

Submit Documentation Feedback

3

www.ti.com

FB

PGND

SW

VIN

CTRL

+

-

Current Limit

+

-

ErrorComparator

S

R

CTRL

L

DO GND

Q1
Input switch

400 ns Min

Off Time

Undervoltage

Lockout

Bias Supply

Gate

Driver

Gate

Driver

RS Latch

Logic

6 s Max

On Time

V

ref

= 1.233 V

Digital

Interface

6 Bit DAC

Soft

Start

Q2

Main Switch

R

sense

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

TERMINAL FUNCTIONS

TERMINAL

NAME NO.

CTRL 5 I Combined enable and digital output voltage programming pin. Pulling CTRL constantly high enables

DO 3 O Internal DAC output. DO programs the output voltage via the CTRL pin. Refer to the application

FB 4 I Feedback. FB must be connected to the output voltage-feedback divider.

GND 7 Analog ground. GND must be directly connected to the PGND pin. Refer to the application

L 1 O Drain of the internal switch (Q1). Connect L to the inductor.

PGND 6 Power ground

SW 8 I Drain of the integrated switch Q2. SW is connected to the inductor and anode of the Schottky

VIN 2 I Input supply pin

I/O DESCRIPTION

the device. When CTRL is pulled to GND, the device is disabled and the input is disconnected from
the output by opening the integrated switch Q1. Pulsing CTRL low increases or decreases the output
voltage. Refer to the application information section for further information.

information section for further information.

information section for further information.

rectifier diode.

FUNCTIONAL BLOCK DIAGRAM

η Efficiency vs Load current Figure 2

I

DD(Q)

V

(FB)

4

Quiescent current vs Input voltage Figure 4
Feedback voltage vs Temperature Figure 5

Typical Characteristics

Submit Documentation Feedback

Table of Graphs

vs Input voltage Figure 3

FIGURE

www.ti.com

IO - Output Current - mA

70

72

74

76

78

80

82

84

86

88

L = 4.7 µH
VO = 18 V

0.1 1 10 100

Efficiency - %

VI = 5 V

VI = 3.6 V

VI = 2.4 V

VI - Input Voltage - V

60

63

66

69

72

75

78

81

84

87

90

1 2 3 4 5 6

Efficiency - %

IO = 10 mA

IO = 5 mA

L = 4.7 µH
VO = 18 V

TA - Free-Air Temperature - °C

1.233

1.234

1.235

1.236

1.237

1.238

-40 -15 10 35 60 85

V

(fb)

- Feedback Voltage - V

VI = 2.4 V

VI - Input Voltage - V

0

10

20

30

40

50

60

1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0

I

DD(Q)

- Quiescent Current - µA

TA = -40°C

TA = 25°C

TA = 85°C

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

Typical Characteristics (continued)

Table of Graphs (continued)

FIGURE

I

(FB)

r

ds(on)

V

(DO)

Feedback current vs Temperature Figure 6
r

Main switch Q2 vs Temperature Figure 7

ds(on)

vs Input voltage Figure 8

r

Input switch Q1 vs Temperature Figure 9

ds(on)

vs Input voltage Figure 10

V

Voltage vs CTRL input step Figure 11

(DO)

Line transient response Figure 12
Load transient response Figure 13
PFM operation Figure 14
Soft start Figure 15

Efficiency Efficiency

vs vs

Load Current Input Voltage

Quiescent Current Feedback Voltage

Figure 2. Figure 3.

vs vs

Input Voltage Temperature

Figure 4. Figure 5.

Submit Documentation Feedback

5

www.ti.com

0

10

20

30

40

50

60

70

80

90

100

-40 -15 10 35 60 85
TA - Free-Air Temperature - °C

I

(fb)

- Feedback Current - nA

VI = 5 V

VI = 3.6 V

VI = 2.4 V

0

100

200

300

400

500

600

700

-40 -15 10 35 60 85
TA - Free-Air Temperature - °C

r

ds(on)

- On-State Resistance - MΩ

VI = 2.4 V

0

100

200

300

400

500

600

1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0

VI - Input Voltage - V

r

ds(on)

- On-State Resistance - MΩ

TA = 25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-40 -15 10 35 60 85
TA - Free-Air Temperature - °C

r

ds(on)

- On-State Resistance - Ω

VI = 2.4 V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0

VI - Input Voltage - V

r

ds(on)

- On-State Resistance - Ω

TA = 25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0 8 16 24 32 40 48 56 64

Input Step Number

V

(DO)

– Drop–Out Voltage – V

VI = 2.4 V

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

Feedback Current r

vs vs

Temperature Temperature

Figure 6. Figure 7.

r

Main Switch Q2 r

ds(ON)

vs vs

Input Voltage Temperature

ds(ON)

ds(ON)

Main Switch Q2

Input Switch Q1

r

ds(ON)

6

Figure 8. Figure 9.

Input Switch Q1 V

vs vs

(DO)

Input Voltage CTRL Input Step

Figure 10. Figure 11.

Submit Documentation Feedback

Voltage

www.ti.com

250 µs/Div

VI = 2.4 V to 3.4 V Step

VO = 100 mV/Div

I

(Load)

= 1 mA to 11 mA Step

VO = 50 mV/Div

50 µs/Div

VO = 50 mV/Div

1 µs/Div

V

(SW)

= 10 V/Div

IL = 200 mA/Div

Figure 12. . Line Transient Response

TPS61045

SLVS440A – JANUARY 2003 – REVISED SEPTEMBER 2003

Figure 13. . Load Transient Response

Figure 14. . PFM Operation

Submit Documentation Feedback

7