Texas Instruments TPS54810 User Manual

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6,4 mm X 9,7 mm
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
4-V TO 6-V INPUT, 8-A OUTPUT SYNCHRONOUS BUCK PWM
SWITCHER WITH INTEGRATED FETS (SWIFT™)
TPS54810
FEATURES
D 30-m MOSFET Switches for High Efficiency
D 0.9-V to 3.3-V Adjustable Output Voltage
Range With 1% Accuracy
D Externally Compensated D Fast Transient Response D Wide PWM Frequency:
Fixed 350 kHz, 550 kHz or Adjustable 280 kHz to 700 kHz
D Load Protected by Peak Current Limit and
Thermal Shutdown
D Integrated Solution Reduces Board Area and
Total Cost
APPLICATIONS
D Low-Voltage, High-Density Systems With
Power Distributed at 5 V
D Point of Load Regulation for High
Performance DSPs, FPGAs, ASICs and Microprocessors
D Broadband, Networking, and Optical
Communications Infrastructure
D Portable Computing/Notebook PCs
DESCRIPTION
As a member of the SWIFT family of dc/dc regulators, the TPS54810 low-input voltage high-output current synchronous buck PWM converter integrates all required active components. Included on the substrate with the listed features are a true, high performance, voltage error amplifier that enables maximum performance under transient conditions and flexibility in choosing the output filter L and C components; an under-voltage-lockout circuit to prevent start-up until the input voltage reaches 3.8 V; an internally or externally set slow-start circuit to limit in-rush currents; and a power good output useful for processor/logic reset, fault signaling, and supply sequencing.
The TPS54810 is available in a thermally enhanced 28-pin TSSOP (PWP) PowerPAD package, which eliminates bulky heatsinks. TI provides evaluation modules and the SWIFT designer software tool to aid in quickly achieving high-performance power supply designs to meet aggressive equipment development cycles.
SIMPLIFIED SCHEMATIC
Input
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD and SWIFT are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
VIN PH
TPS54810
BOOT PGND
VBIAS
VSENSE
COMP
VSENSE
AGND
Compensation Network
Output
100
Efficiency %
EFFICIENCY AT 700 HZ
95
90
85
80
75
70
65
60
55
50
012345678910
IL Load Current A
Copyright © 2002, Texas Instruments Incorporated
VI = 5 V VO = 3.3 V
TPS54810
Sink current, I
S
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
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T
A
40°C to 85°C 0.9 V to 3.3 V PLASTIC HTSSOP (PWP)
(1)
The PWP package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54810PWPR). See the application section
OUTPUT VOLTAGE PACKAGE PART NUMBER
(1)
TPS54810PWP
of the data sheet for PowerPAD drawing and layout information.
(2)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
VIN, SS/ENA, SYNC 0.3 to 7
Input voltage range, V
I
RT 0.3 to 6
VSENSE 0.3 to 4
BOOT 0.3 to 17
Output voltage range, V
Source current, I
O
O
VBIAS, COMP, PWRGD −0.3 to 7
PH 0.6 to 10
PH Internally Limited
COMP, VBIAS 6 mA
PH 12 A
Sink current, I
S
COMP 6
SS/ENA, PWRGD 10
Voltage differential AGND to PGND ±0.3 V
Operating virtual junction temperature range, T
Storage temperature, T
stg
J
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 °C
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
TPS54810 UNIT
40 to 125 °C
65 to 150 °C
V
V
mA
RECOMMENDED OPERATING CONDITIONS
Input voltage range, V
Operating junction temperature, T
DISSIPATION RATINGS
28-Pin PWP with solder 18.2 °C/W 5.49 W
28-Pin PWP without solder 40.5 °C/W 2.48 W 1.36 W 0.99 W
(1)
For more information on the PWP package, refer to TI technical brief, literature number SLMA002.
(2)
Test Board Conditions:
1. 3” x 3”, 4 layers, thickness: 0.062”
2. 1.5 oz. copper traces located on the top of the PCB
3. 1.5 oz. copper ground plane on the bottom of the PCB
4. 0.5 oz. copper ground planes on the 2 internal layers
5. 12 thermal vias (see “Recommended Land Pattern” in applications section of this data sheet)
(3)
Maximum power dissipation may be limited by over current protection.
2
I
PACKAGE
J
(1) (2)
THERMAL IMPEDANCE
JUNCTION-TO-AMBIENT
TA 25°C
POWER RATING
MIN NOM MAX UNIT
4 6 V
40 125 °C
TA = 70°C
POWER RATING
(2)
3.02 W 2.20 W
TA = 85°C
POWER RATING
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(1) (3)
(1) (3)
Externally set free running frequency range
kHz
ELECTRICAL CHARACTERISTICS
TJ = 40°C to 125°C, VI = 4 V to 6 V unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE, VIN
Input voltage range, VIN 4.0 6.0 V
I
(Q)
UNDER VOLTAGE LOCK OUT
BIAS VOLTAGE
CUMULATIVE REFERENCE
V
REGULATION
OSCILLATOR
(1)
(2)
(3)
Quiescent current
Start threshold voltage, UVLO 3.8 3.85 V
Stop threshold voltage, UVLO 3.40 3.50 V
Hysteresis voltage, UVLO 0.14 0.16 V
Rising and falling edge deglitch, UVLO
(1)
Output voltage, VBIAS I
Output current, VBIAS
Accuracy 0.882 0.891 0.900 V
ref
(2)
Line regulation
Load regulation
Internally set—free running frequency range
Externally set—free running frequency range
High level threshold, SYNC 2.5 V
Low level threshold, SYNC 0.8 V
Pulse duration, external sychronization, SYNC
Frequency range, SYNC
Ramp valley
(1)
Ramp amplitude (peak-to-peak)
Minimum controllable on time
Maximum duty cycle
(1)
(1)
(1)
(1)
(1)
Specified by design
Static resistive loads only
Specified by the circuit used in Figure 9
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
fs = 350 kHz, SYNC 0.8 V, RT open, PH pin open
fs = 550 kHz, SYNC 2.5 V, RT open, PH pin open
Shutdown, SS/ENA = 0 V 1.0 1.4
= 0 2.70 2.80 2.90 V
(VBIAS)
IL = 4 A, fs = 350 kHz, TJ = 85°C 0.04
IL = 4 A, fs = 550 kHz, TJ = 85°C 0.04
IL = 0 A to 8 A, fs = 350 kHz, TJ = 85°C 0.03
IL = 0 A to 8 A, fs = 550 kHz, TJ = 85°C 0.03
SYNC 0.8 V, RT open 280 350 420
SYNC 2.5 V, RT open 440 550 660
RT = 180 k (1% resistor to AGND) 252 280 308
RT = 100 k (1% resistor to AGND) 460 500 540
RT = 68 k (1% resistor to AGND) 663 700 762
50 ns
330 700 kHz
90%
11 15.8
16 23.5
2.5 µs
100 µA
0.75 V
1 V
200 ns
mA
%/V
%/A
kHz
kHz
3
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
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ELECTRICAL CHARACTERISTICS CONTINUED
TJ = 40°C to 125°C, VI = 4 V to 6 V unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1 kΩ COMP to AGND
Error amplifier unity gain bandwidth Parallel 10 k, 160 pF COMP to AGND
Error amplifier common mode input voltage range
Powered by internal LDO
Input bias current, VSENSE VSENSE = V
Output voltage slew rate (symmetric), COMP 1.0 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM comparator input to PH pin (excluding dead-
10-mV overdrive
time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA
Falling edge deglitch, SS/ENA
(1)
(1)
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 1.3 V, VI = 1.5 V 1.5 2.3 4.0 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %V
Power good hysteresis voltage
Power good falling edge deglitch
Output saturation voltage, PWRGD I
Leakage current, PWRGD V
(1)
(1)
= 2.5 mA 0.18 0.3 V
(sink)
= 3.6 V 1 µA
I
CURRENT LIMIT
(1)
V
Current limit
I
V
I
= 4.5 V
= 6 V
, output shorted 9 11
(1)
, output shorted 10 12
Current limit leading edge blanking time 100 ns
Current limit total response time 200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point
Thermal shutdown hysteresis
(1)
(1)
OUTPUT POWER MOSFETS
(2)
r
DS(on)
(1)
(2)
Power MOSFET switches
Specified by design
Matched MOSFETs, low-side r
production tested, high-side r
DS(on)
VI = 6 V
VI = 4.5 V
(2)
DS(on)
(1)
(1)
ref
(1)
production tested.
90 110 dB
(1)
3 5 MHz
0 VBIAS V
60 250 nA
70 85 ns
0.03 V
2.5 µs
3 %V
35 µs
135 150 165 _C
10 _C
26 47
30 60
ref
ref
A
m
4
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
PWP PACKAGE
(TOP VIEW)
AGND
VSENSE
COMP
PWRGD
BOOT
PH PH PH PH PH PH PH PH PH
1 2 3 4 5 6 7 8 9 10 11 12 13 14
THERMAL
PAD
28 27 26 25 24 23 22 21 20 19 18 17 16 15
RT SYNC SS/ENA VBIAS VIN VIN VIN VIN VIN PGND PGND PGND PGND PGND
Terminal Functions
TERMINAL
NAME NO.
AGND 1 Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor and
SYNC pin. Connect PowerPAD to AGND.
BOOT 5 Bootstrap input. 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating drive for the
high-side FET driver.
COMP 3 Error amplifier output. Connect frequency compensation network from COMP to VSENSE.
PGND 1519 Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas
to the input and output supply returns, and negative terminals of the input and output capacitors. A single point connection to AGND is recommended.
PH 614 Phase input/output. Junction of the internal high-side and low-side power MOSFETs, and output inductor.
PWRGD 4 Power good open drain output. High-Z when VSENSE 90% V
when SS/ENA is low or the internal shutdown signal is active.
RT 28 Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency. When using the
SYNC pin, set the RT value for a frequency at or slightly lower than the external oscillator frequency.
SS/ENA 26 Slow-start/enable input/output. Dual function pin which provides logic input to enable/disable device operation and
capacitor input to externally set the start-up time.
SYNC 27 Synchronization input. Dual function pin which provides logic input to synchronize to an external oscillator or pin select
between two internally set switching frequencies. When used to synchronize to an external signal, a resistor must be connected to the RT pin.
VBIAS 25 Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a
high quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor.
VIN
VSENSE 2 Error amplifier inverting input. Connect to output voltage through compensation network/output divider.
2024 Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to
device package with a high quality, low-ESR 10-µF ceramic capacitor.
DESCRIPTION
ref
, otherwise PWRGD is low. Note that output is low
5
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
FUNCTIONAL BLOCK DIAGRAM
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SS/ENA
VIN
Enable
Comparator
1.2 V
Hysteresis: 0.03 V
VIN UVLO
Comparator
VIN
3.8 V
Hysteresis: 0.16 V
Internal/External
VREF = 0.891 V
TPS54810
Slow-Start
Reference
(Internal Slow-Start Time = 3.35 ms)
Falling
Edge
Deglitch
2.5 µs
Falling
and
Rising
Edge
Deglitch
2.5 µs
Thermal
Shutdown
150°C
+
Error
Amplifier
SS_DIS
PWM
Comparator
OSC
RTCOMPVSENSE
SHUTDOWN
Leading
Edge
Blanking
100 ns
RQ
S
Powergood
Comparator
VSENSE
0.90 V
ref
Hysteresis: 0.03 Vref
SYNC
AGND
VBIAS
ILIM
Comparator
SHUTDOWN
Adaptive Dead-Time
Control Logic
SHUTDOWN
and
VIN
VBIAS
Falling
Deglitch
REG
Edge
35 µs
30 m
30 m
VIN
BOOT
PH
PGND
PWRGD
3 6 V
L
OUT
C
V
O
O
RELATED DC/DC PRODUCTS
D TPS56300—dc/dc controller D PT6600 series—9-A plugin modules
6
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g
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
TYPICAL CHARACTERISTICS
DRAIN-SOURCE
ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
60
VI = 5 V, IO = 8 A
50
40
30
20
10
Drain Source On-State Reststance m
0
40 15 10 35 60 85 110 135
TJ Junction Temperature °C
Figure 1
EXTERNALLY SET
OSCILLATOR FREQUENCY
vs
JUNCTION TEMPERATURE
800
700
600
500
400
300
f Externally Set Oscillator Frequency kHz
200
40 0 25 85 125
RT = 68 k
RT = 100 k
RT = 180 k
TJ Junction Temperature °C
Figure 3
f Internally Set Oscillator Frequency kHz
VOLTAGE REFERENCE
vs
JUNCTION TEMPERATURE
0.895
0.893
0.891
0.889
Voltage Reference V
ref
0.887
V
0.885
40 0 25 85 125
TJ Junction Temperature °C
Figure 4
INTERNALLY SET
OSCILLATOR FREQUENCY
vs
JUNCTION TEMPERATURE
750
650
SYNC 2.5 V
550
450
SYNC 0.8 V
350
250
40 0 25 85 125
TJ Junction Temperature °C
Figure 2
DEVICE POWER LOSSES
5
4.5
4
3.5
3
2.5
2
1.5
Device Power Losses − W
1
0.5
0
012345678
LOAD CURRENT
TJ = 125°C fs = 700 kHz
IL Load Current A
vs
VI = 5 V
Figure 5
OUTPUT VOLTAGE REGULATION
vs
INPUT VOLTAGE
4.5 4.8 5.1 5.4 5.7 6
V
− Input Voltage − V
I
Output Voltage Regulation V V
0.895
0.893
0.891
0.889
0.887
O
0.885
Figure 6
ERROR AMPLIFIER
OPEN LOOP RESPONSE
140
120
100
80
60
Gain dB
40
20
0
20 1 100 1 k 1 M
10 10 k 100 k 10 M
f Frequency Hz
RL = 10 kΩ, CL = 160 pF, TA = 25°C
Phase
Gain
Figure 7
0
20
40
60
80
100
120
140
160
180
200
rees
Phase De
INTERNAL SLOW-START TIME
vs
JUNCTION TEMPERATURE
3.80
3.65
3.50
3.35
3.20
3.05
Internal Slow-Start Time ms
2.90
2.75
40 0 25 85 125
TJ Junction Temperature °C
Figure 8
7
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
APPLICATION INFORMATION
Figure 9 shows the schematic diagram for a typical TPS54810 application. The TPS54810 (U1) can provide up to 8 A of output current at a nominal output voltage of
V
I
C10 10 µF
C1
1000 pF
R1
10 k
R2
301
C12 10 µF
R5
10 k
R3
10 k
150 pF
R4
9.76 k
C2
R6
71.5 k
C6
0.047 µF
C3
1 µF
C4
3300 pF
28
27
26
25
4
3
2
1
RT
SYNC
SS/ENA
VBIAS
PWRGD
COMP
VSENSE
AGND
U1
TPS54810PWP
PWRPAD
1.8 V. For proper thermal performance, the PowerPAD underneath the integrated circuit TPS54810 needs to be soldered well to the printed-circuit board.
24
VIN
23
VIN
22
VIN
21
VIN
20
VIN
14
PH
13
PH
12
PH
PH
PH
PH
PH
PH
PH
BOOT
PGND
PGND
PGND
PGND
PGND
11
10 9
8
7
6
5
19
18
17
16
15
C9
0.047 µF
0.65 µH
R7
2.4
C11 3300 pF
L1
C8 22 µF
C7 22 µFC522 µF
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V
O
Analog and Power Grounds are Tied at the Pad Under the Package of IC
Figure 9. Application Circuit
COMPONENT SELECTION
The values for the components used in this design example were selected for low output ripple voltage and small PCB area. Additional design information is available at www.ti.com.
INPUT FILTER
The input voltage is a nominal 5 VDC. The input filter C10 is a 10-µF ceramic capacitor (Taiyo Yuden). C12, also a 10-µF ceramic capacitor (Taiyo Yuden) provides high frequency decoupling of the TPS54810 from the input supply and must be located as close as possible to the device. Ripple current is carried in both C10 and C12, and the return path to PGND should avoid the current circulating in the output capacitors C5, C7, and C8.
FEEDBACK CIRCUIT
The values for these components have been selected to provide low output ripple voltage. The resistor divider network of R1 and R4 sets the output voltage for the circuit
at 1.8 V. R1, along with R2, R3, C1, C2, and C4 forms the loop compensation network for the circuit. For this design, a Type 3 topology is used.
OPERATING FREQUENCY
In the application circuit, RT is grounded through a 71.5 k resistor to select the operating frequency of 700 kHz. To set a different frequency, place a 68 k to 180 k resistor between RT (pin 28) and analog ground or leave RT floating to select the default of 350 kHz. The resistance can be approximated using the following equation:
R +
500 kHz
Switching Frequency
100 [kW]
(1)
OUTPUT FILTER
The output filter is composed of a 0.65-µH inductor and 3 x 22-µF capacitor. The inductor is a low dc resistance (0.017 ) type, Pulse Engineering PA0277. The capacitors used are 22-µF, 6.3 V ceramic types with X5R dielectric. The feedback loop is compensated so that the unity gain frequency is approximately 75 kHz.
8
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
PCB LAYOUT
Figure 10 shows a generalized PCB layout guide for the TPS54810
The VIN pins are connected together on the printed-circuit board (PCB) and bypassed with a low-ESR ceramic-bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the VIN pins, and the TPS54810 ground pins. The minimum recommended bypass capacitance is 10-µF ceramic capacitor with a X5R or X7R dielectric and the optimum placement is closest to the VIN pins and the PGND pins.
The TPS54810 has two internal grounds (analog and power). Inside the TPS54810, the analog ground ties to all of the noise sensitive signals, while the power ground ties to the noisier power signals. Noise injected between the two grounds can degrade the performance of the TPS54810, particularly at higher output currents. Ground noise on an analog ground plane can also cause problems with some of the control and bias signals. For these reasons, separate analog and power ground traces are recommended. There is an area of ground on the top layer directly under the IC, with an exposed area for connection to the PowerPAD. Use vias to connect this ground area to any internal ground planes. Additional vias are also used at the ground side of the input and output filter capacitors. The AGND and PGND pins are tied to the PCB ground by connecting them to the ground area under the device as shown. The only components that tie directly to the power ground plane are the input capacitors, the output
capacitors, the input voltage decoupling capacitor, and the PGND pins of the TPS54810. Use a separate wide trace for the analog ground signal path. The analog ground is used for the voltage set point divider, timing resistor RT, slow-start capacitor and bias capacitor grounds. Connect this trace directly to AGND (Pin 1).
The PH pins are tied together and routed to the output inductor. Since the PH connection is the switching node, the inductor is located close to the PH pins. The area of the PCB conductor is minimized to prevent excessive capacitive coupling.
Connect the boot capacitor between the phase node and the BOOT pin as shown Keep the boot capacitor close to the IC and minimize the conductor trace lengths.
Connect the output filter capacitor(s) as shown between the VOUT trace and PGND. It is important to keep the loop formed by the PH pins, L
OUT
, C
and PGND as small as
OUT
practical.
Place the compensation components from the VOUT trace to the VSENSE and COMP pins. Do not place these components too close to the PH trace. Due to the size of the IC package and the device pin-out, they must be routed close, but maintain as much separation as possible while still keeping the layout compact.
Connect the bias capacitor from the VBIAS pin to analog ground using the isolated analog ground trace. If a slow-start capacitor or RT resistor is used, or if the SYNC pin is used to select 350-kHz operating frequency, connect them to this trace.
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
COMPENSA TION NETWORK
VOUT
BOOT CAPACITOR
ANALOG GROUND TRACE
AGND
VSENSE
COMP
PWRGD
BOOT
PH
PH
EXPOSED
POWERP AD
SS/ENA
AREA
SYNC
VBIAS
VIN
VIN
VIN
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RT
FREQUENCY SET RESISTOR
SLOW ST ART CAPACITOR
BIAS CAP ACITOR
OUTPUT INDUCTOR
OUTPUT FILTER CAPACITOR
PH
PH
PH
PH
PH
PH
PH
PH
TOPSIDE GROUND AREA
Figure 10. PCB Layout
VIN
VIN
PGND
PGND
PGND
PGND
PGND
VIA to Ground Plane
VIN
INPUT
BYPASS
CAPACITOR
INPUT
BULK
FILTER
10
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
LAYOUT CONSIDERATIONS FOR THERMAL PERFORMANCE
For operation at full rated load current, the analog ground plane must provide adequate heat dissipating area. A 3 inch by 3 inch plane of 1 ounce copper is recommended, though not mandatory, depending on ambient temperature and airflow. Most applications have larger areas of internal ground plane available, and the PowerPAD should be connected to the largest area available. Additional areas on the top or bottom layers also help dissipate heat, and
Minimum Recommended Thermal Vias: 8 x 0.013 Diameter Inside
8 PL
Ø0.01804 PL
Connect Pin 1 to Analog Ground Plane in This Area for Optimum Performance
0.0339
0.0650
0.0500
0.3478
0.3820
Minimum Recommended Top
Side Analog Ground Area
0.0500
0.0500
0.0650
0.0339
Ø0.0130
Powerpad Area 4 x 0.018 Diameter Under Device as Shown. Additional 0.018 Diameter Vias May Be Used if Top Side Analog Ground Area Is Extended.
any area available should be used when 8 A or greater operation is desired. Connection from the exposes area of the PowerPAD to the analog ground plane layer should be made using 0.013 inch diameter vias to avoid solder wicking through the vias. Eight vias should be in the PowerPAD area with four additional vias located under the device package. The size of the vias under the package, but not in the exposed thermal pad area, can be increased to 0.018. Additional vias beyond the twelve recommended that enhance thermal performance should be included in areas not under the device package.
0.0150
0.06
0.2090
0.0256
Minimum Recommended Exposed
0.1700
0.1340
0.0630
0.0400
Copper Area for Powerpad. 5-mil
Stencils May Require 10 Percent
Larger Area
Figure 11. Recommended Land Pattern for the 28Pin PWP PowerPAD
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
PERFORMANCE GRAPHS (FROM APPLICATION CIRCUIT SHOWN IN FIGURE 9)
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EFFICIENCY
vs
100
95
90
85
80
75
70
Efficiency %
65
60
55
50
OUTPUT CURRENT
VI = 5 V VO = 1.8 V fs = 700 kHz
0246810
IO Output Current A
Figure 12
AMBIENT TEMPERATURE
125
OUTPUT CURRENT
115
C
°
105
95
85
75
65
55
Ambient Temperature
45
A
T
35
25
01234
vs
IO Output Current A
(1)
TJ = 25°C fs = 700 kHz
VI = 5 V
567 8
Figure 15
LOAD REGULATION
vs
OUTPUT CURRENT
1.003
1.002
1.001
1
Load Regulation
0.999
0.998
0.997
0246810
IO Output Current A
VI = 5 V VO = 1.8 V TA = 25°C fs = 700 kHz
Figure 13
OUTPUT RIPPLE VOLTAGE
VI = 5 V VO = 1.8 V IO = 6 A fs = 700 kHz
Output Ripple Voltage − 10 mV/div
t Time 1 µs/div
Figure 16
LINE REGULATION
vs
INPUT VOLTAGE
1.001
1.0008
1.0006
1.0004
1.0002
0.9998
Line Regulation
0.9996
0.9994
0.9992
0.999
8 A
1
4 A
4.5 4.7 4.9 5.1 5.3 5.5 5.7 5.9
0 A
VI Input Voltage V
Figure 14
TRANSIENT RESPONSE
VI = 5 V
Output Voltage 100 mV/div O
V
2 A to 6.5 A
t Time 20 µs/div
Figure 17
VI = 5 V VO = 1.8 V TA = 25°C fs = 700 kHz
Output Current 2 A/div O
I
SLOW-START TIMING
VI = 5 V,
0.04 µF Slow-start Cap
Input Voltage 2 V/div
4.0 ms/div
Figure 18
(1)
Safe operating area is applicable to the test board conditions in the Dissipation Ratings
12
Output Voltage 2 V/div
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TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
DETAILED DESCRIPTION
Under Voltage Lock Out (UVLO)
The TPS54810 incorporates an under voltage lockout circuit to keep the device disabled when the input voltage (VIN) is insufficient. During power up, internal circuits are held inactive until VIN exceeds the nominal UVLO threshold voltage of 3.80 V. Once the UVLO start threshold is reached, device start-up begins. The device operates until VIN falls below the nominal UVLO stop threshold of
3.5 V. Hysteresis in the UVLO comparator, and a 2.5-µs rising and falling edge deglitch circuit reduce the likelihood of shutting the device down due to noise on VIN.
Slow-Start/Enable (SS/ENA)
The slow-start/enable pin provides two functions. First, the pin acts as an enable (shutdown) control by keeping the device turned off until the voltage exceeds the start threshold voltage of approximately 1.2 V. When SS/ENA exceeds the enable threshold, device start up begins. The reference voltage fed to the error amplifier is linearly ramped up from 0 V to 0.891 V in 3.35 ms. Similarly, the converter output voltage reaches regulation in approximately 3.35 ms. Voltage hysteresis and a 2.5-µs falling edge deglitch circuit reduce the likelihood of triggering the enable due to noise.
The second function of the SS/ENA pin provides an external means of extending the slow-start time with a low-value capacitor connected between SS/ENA and AGND.
Adding a capacitor to the SS/ENA pin has two effects on start-up. First, a delay occurs between release of the SS/ENA pin and start up of the output. The delay is proportional to the slow-start capacitor value and lasts until the SS/ENA pin reaches the enable threshold. The start-up delay is approximately:
td+ C
(SS)
Second, as the output becomes active, a brief ramp-up at the internal slow-start rate may be observed before the externally set slow-start rate takes control and the output rises at a rate proportional to the slow-start capacitor. The ramp-up time set by the capacitor is approximately:
t
+ C
(d)
(SS)
The actual ramp-up time is likely to be less than the above approximation due to the brief ramp-up at the internal rate.
VBIAS Regulator (VBIAS)
The VBIAS regulator provides internal analog and digital blocks with a stable supply voltage over variations in junction temperature and input voltage. A high quality,
1.2 V 5 mA
0.7 V 5 mA
(2)
(3)
low-ESR, ceramic bypass capacitor is required on the VBIAS pin. X7R or X5R grade dielectrics are recommended because their values are more stable over temperature. The bypass capacitor should be placed close to the VBIAS pin and returned to AGND.
External loading on VBIAS is allowed, with the caution that internal circuits require a minimum VBIAS of 2.70 V, and external loads on VBIAS with ac or digital switching noise may degrade performance. The VBIAS pin may be useful as a reference voltage for external circuits.
Voltage Reference
The voltage reference system produces a precise V
ref
signal by scaling the output of a temperature stable bandgap circuit. During manufacture, the bandgap and scaling circuits are trimmed to produce 0.891 V at the output of the error amplifier, with the amplifier connected as a voltage follower. The trim procedure adds to the high precision regulation of the TPS54810, since it cancels offset errors in the scale and error amplifier circuits.
Oscillator and PWM Ramp
The oscillator frequency can be set to internally fixed values of 350 kHz or 550 kHz using the SYNC pin as a static digital input. If a different frequency of operation is required for the application, the oscillator frequency can be externally adjusted from 280 to 700 kHz by connecting a resistor between the RT pin and AGND and floating the SYNC pin. The switching frequency is approximated by the following equation, where R is the resistance from RT to AGND:
Switching Frequency +
100 kW
R
500 [kHz]
(4)
External synchronization of the PWM ramp is possible over the frequency range of 330 kHz to 700 kHz by driving a synchronization signal into SYNC and connecting a resistor from RT to AGND. Choose an RT resistor which sets the free running frequency to 80% of the synchronization signal. The following table summarizes the frequency selection configurations:
SWITCHING FRE-
QUENCY
350 kHz, internally set Float or AGND Float
550 kHz, internally set =2.5 V Float
Externally set 280 kHz to 700 kHz
Externally synchro­nized frequency
SYNC PIN RT PIN
Float R = 68 k to 180 k
Synchronization signal
R = RT value for 85% of external synchro­nization frequency
Error Amplifier
The high performance, wide bandwidth, voltage error amplifier sets the TPS54810 apart from most dc/dc converters. The user is given the flexibility to use a wide range of output L and C filter components to suit the
13
TPS54810
SLVS420B MARCH 2002 R EVISED FEBRUARY 2005
www.ti.com
particular application needs. Type 2 or type 3 compensa­tion can be employed using external compensation components.
PWM Control
Signals from the error amplifier output, oscillator, and current limit circuit are processed by the PWM control logic. Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch, and portions of the adaptive dead-time and control logic block. During steady-state operation below the current limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch. Once the PWM latch is reset, the low-side FET remains on for a minimum duration set by the oscillator pulse width. During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to charge back up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the error amplifier output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and turning on the low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM ramp.
During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above the PWM peak voltage. If the error amplifier is high, the PWM latch is never reset and the high-side FET remains on until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting VSENSE to approximately the same voltage as VREF. If the error amplifier output is low, the PWM latch is continually reset and the high-side FET does not turn on. The low-side FET remains on until the VSENSE voltage decreases to a range that allows the PWM comparator to change states. The TPS54810 is capable of sinking current continuously until the output reaches the regulation set-point.
If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds the error amplifier output. The high-side FET turns off and low-side FET turns on to decrease the energy in the output inductor and consequently the output current. This process is repeated each cycle in which the current limit comparator is tripped.
Dead-Time Control and MOSFET Drivers
Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side driver does not turn on until the voltage at the gate of the low-side
FET is below 2 V. While the low-side driver does not turn on until the voltage at the gate of the high-side MOSFET is below 2 V.
The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side drive is supplied from the BOOT pin. A bootstrap circuit uses an external BOOT capacitor and an internal 2.5- bootstrap switch connected between the VIN and BOOT pins. The integrated bootstrap switch improves drive efficiency and reduces external component count.
Overcurrent Protection
The cycle by cycle current limiting is achieved by sensing the current flowing through the high-side MOSFET and comparing this signal to a preset overcurrent threshold. The high side MOSFET is turned off within 200 ns of reaching the current limit threshold. A 100 ns leading edge blanking circuit prevents false tripping of the current limit when the high side switch is turning on. Current limit detection occurs only when current flows from VIN to PH when sourcing current to the output filter. Load protection during current sink operation is provided by thermal shutdown.
Thermal Shutdown
The device uses the thermal shutdown to turn off the power MOSFETs and disable the controller if the junction temperature exceeds 150°C. The device is released from shutdown automatically when the junction temperature decreases to 10°C below the thermal shutdown trip point, and starts up under control of the slow-start circuit.
Thermal shutdown provides protection when an overload condition is sustained for several milliseconds. With a persistent fault condition, the device cycles continuously; starting up by control of the soft-start circuit, heating up due to the fault condition, and then shutting down upon reaching the thermal shutdown trip point. This sequence repeats until the fault condition is removed.
Power Good (PWRGD)
The power good circuit monitors for under voltage conditions on VSENSE. If the voltage on VSENSE is 10% below the reference voltage, the open-drain PWRGD output is pulled low. PWRGD is also pulled low if VIN is less than the UVLO threshold or SS/ENA is low. When VIN UVLO threshold, SS/ENA enable threshold, and VSENSE > 90% of V
, the open drain output of the
ref
PWRGD pin is high. A hysteresis voltage equal to 3% of V
and a 35 µs falling edge deglitch circuit prevent
ref
tripping of the power good comparator due to high frequency noise.
14
PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
TPS54810PWP ACTIVE HTSSOP PWP 28 50 Green (RoHS &
no Sb/Br)
TPS54810PWPG4 ACTIVE HTSSOP PWP 28 50 Green (RoHS &
no Sb/Br)
TPS54810PWPR ACTIVE HTSSOP PWP 28 2000 Green (RoHS &
no Sb/Br)
TPS54810PWPRG4 ACTIVE HTSSOP PWP 28 2000 Green(RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
(3)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
11-Mar-2008
*All dimensions are nominal
Device Package
Type
TPS54810PWPR HTSSOP PWP 28 2000 330.0 16.4 6.9 10.2 1.8 12.0 16.0 Q1
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS54810PWPR HTSSOP PWP 28 2000 346.0 346.0 33.0
Pack Materials-Page 2
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