Texas Instruments TPS54332DDAR Schematic [ru]

PH
VIN
GND
BOOT
VSENSE
COMP
SS
SS
D1
VIN
VOUT
EN
TPS54332
I
BOOT
L
O
O
Ren1
O2
1
2
3
Ren2
O1
60
65
70
75
80
85
90
95
100
0 0.5 1 1.5 2 2.5 3 3.5
I -OutputCurrent- A
O
Efficiency-%
V =2.5V
O
V =5V
I
V =12V
I
V =15V
I
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
TPS54332 3.5-A, 28-V, 1-MHz, Step-Down DC-DC Converter With Eco-Mode™

1 Features 3 Description

1
3.5-V to 28-V Input Voltage Range
Adjustable Output Voltage Down to 0.8 V
Integrated 80-mHigh-Side MOSFET Supports up to 3.5-A Continuous Output Current
High Efficiency at Light Loads With a Pulse­Skipping Eco-Mode™
Fixed 1-MHz Switching Frequency
Typical 1-μA Shutdown Quiescent Current
Adjustable Slow-Start Limits Inrush Currents
Programmable UVLO Threshold
Overvoltage Transient Protection
Cycle-by-Cycle Current Limit, Frequency Foldback and Thermal Shutdown Protection
Available in Thermally Enhanced 8-Pin SOIC PowerPAD™ Package
Supported by WEBENCH™ Tool (http://www.ti.com/lsds/ti/analog/webench/overvie
w.page)

2 Applications

Consumer Applications such as Set-Top Boxes, CPE Equipment, LCD Displays, Peripherals, and Battery Chargers
Industrial and Car Audio Power Supplies
5-V, 12-V and 24-V Distributed Power Systems
The TPS54332 is a 28-V, 3.5-A non-synchronous buck converter that integrates a low-R MOSFET. To increase efficiency at light loads, a pulse-skipping Eco-Mode feature is automatically activated. Furthermore, the 1-μA shutdown supply current allows the device to be used in battery­powered applications. Current mode control with internal slope compensation simplifies the external compensation calculations and reduces component count while allowing the use of ceramic output capacitors. A resistor divider programs the hysteresis of the input undervoltage lockout. An overvoltage transient protection circuit limits voltage overshoots during start-up and transient conditions. A cycle-by­cycle current limit scheme, frequency foldback and thermal shutdown protect the device and the load in the event of an overload condition. The TPS54332 is available in an 8-pin SOIC PowerPAD™ package.
Device Information
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS54332 SO PowerPAD (8) 4.90 mm× 3.90 mm (1) For all available packages, see the orderable addendum at
the end of the datasheet.
DS(on)
(1)
TPS54332
high-side
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
Simplified Schematic Efficiency
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
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Table of Contents

1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 Handling Ratings....................................................... 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Switching Characteristics.......................................... 6
6.7 Typical Characteristics: Characterization Curves ..... 7
6.8 Typical Characteristics: Supplemental Application
Curves........................................................................ 8
7 Detailed Description .............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram....................................... 10
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 13
8 Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application.................................................. 14
9 Power Supply Recommendations...................... 24
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Example .................................................... 25
10.3 Estimated Circuit Area .......................................... 25
10.4 Electromagnetic Interference (EMI)
Considerations......................................................... 25
11 Device and Documentation Support ................. 26
11.1 Device Support...................................................... 26
11.2 Trademarks........................................................... 26
11.3 Electrostatic Discharge Caution............................ 26
11.4 Glossary................................................................ 26
12 Mechanical, Packaging, and Orderable
Information........................................................... 26

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (Feburary 2013) to Revision C Page
Added Pin Configuration and Functions section, Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout
section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ................................................................................................................................................................................... 1
Changes from Revision A (January 2013) to Revision B Page
Deleted Swift™ from the data sheet title................................................................................................................................ 1
Deleted feature Item: For SWIFT™ Documentation, See the TI Website at www.ti.com/swift.............................................. 1
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1
2
3
4
5
6
7
8BOOT
VIN
EN
SS
PH
GND
COMP
VSENSE
PowerPAD
(Pin 9)
DDA PACKAGE
(TOP VIEW)
TPS54332
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Changes from Original (March 2007) to Revision A Page
Changed the ABSOLUTE MAXIMUM RATINGS table, Input Voltage - EN pin max value From: 5V to 6V.......................... 4
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

5 Pin Configuration and Functions

Pin Functions
PIN I/O DESCRIPTION
NAME NO.
BOOT 1 O A 0.1-μF bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor falls below the
VIN 2 I Input supply voltage, 3.5 V to 28 V. EN 3 I Enable pin. Pull below 1.25 V to disable. Float to enable. Programming the input undervoltage lockout with two
SS 4 I Slow-start pin. An external capacitor connected to this pin sets the output rise time. VSENS 5 I Inverting node of the gm error amplifier.
E COMP 6 O Error amplifier output, and input to the PWM comparator. Connect frequency compensation components to this
GND 7 - Ground. PH 8 O The source of the internal high-side power MOSFET. PowerP 9 - GND pin must be connected to the exposed pad for proper operation.
AD
minimum requirement, the high-side MOSFET is forced to switch off until the capacitor is refreshed.
resistors is recommended.
pin.
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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
Input Voltage VIN –0.3 30 V
EN –0.3 6 BOOT 38 VSENSE –0.3 3 COMP –0.3 3 SS –0.3 3
Output Voltage BOOT-PH 8 V
PH –0.6 30 PH (10 ns transient from ground to negative peak) –5
Source Current EN 100 μA
BOOT 100 mA VSENSE 10 μA PH 9.25 A
Sink Current VIN 9.25 A
COMP 100 μA SS 200
Operating Junction –40 150 °C Temperature
(1) Stresses beyond those listed under Absolute Maxmium Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
MIN MAX UNIT

6.2 Handling Ratings

MIN MAX UNIT
T
stg
V
(ESD)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Storage Temperature –65 150 °C Electrostatic Discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS- 2 kV
001, all pins Charged device model (CDM), per JEDEC specification 500 V
JESD22-C101, all pins
(1)
(2)

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating Input Voltage on (VIN pin) 3.5 28 V Operating junction temperature, T
J
–40 150 °C
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

6.4 Thermal Information

TPS54332
THERMAL METRIC
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
Junction-to-ambient thermal resistance 48.7 Junction-to-case (top) thermal resistance 52.4 Junction-to-board thermal resistance 25.3 Junction-to-top characterization parameter 8.4 Junction-to-board characterization parameter 25.2 Junction-to-case (bottom) thermal resistance 2.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(1)
HSOP UNIT
8 PINS
°C/W
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6.5 Electrical Characteristics

TJ= –40°C to 150°C, VIN = 3.5 V to 28 V (unless otherwise noted)
DESCRIPTION TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN PIN)
Internal undervoltage lockout threshold Rising and Falling 3.5 V Shutdown supply current EN = 0 V, VIN = 12 V, –40°C to 85°C 1 4 μA Operating – non switching supply current VSENSE = 0.85 V 82 120 μA
ENABLE AND UVLO (EN PIN)
Enable threshold Rising and Falling 1.25 1.35 V Input current Enable threshold – 50 mV -1 μA Input current Enable threshold + 50 mV -4 μA
VOLTAGE REFERENCE
Voltage reference 0.772 0.8 0.828 V
HIGH-SIDE MOSFET
On resistance m
ERROR AMPLIFIER
Error amplifier transconductance (gm) –2 μA < I Error amplifier DC gain Error amplifier unity gain bandwidth
(1)
(1)
Error amplifier source/sink current V Switch current to COMP transconductance VIN = 12 V 12 A/V
PULSE-SKIPPING ECO-MODE
Pulse-skipping Eco-Mode switch current threshold 160 mA
CURRENT LIMIT
Current limit threshold VIN = 12 V 4.2 6.5 A
THERMAL SHUTDOWN
Thermal Shutdown 165 °C
SLOW-START (SS PIN)
Charge current V SS to VSENSE matching V
(1) Specified by design
BOOT-PH = 3 V, VIN = 3.5 V 115 200 BOOT-PH = 6 V, VIN = 12 V 80 150
< 2 μA, V(COMP) = 1 V 92 μmhos
COMP
VSENSE = 0.8 V 800 V/V 5 pF capacitance from COMP to GND pins 2.7 MHz
= 1.0 V, 100-mV overdrive ±7 μA
(COMP)
= 0.4 V 2 μA
(SS)
= 0.4 V 10 mV
(SS)

6.6 Switching Characteristics

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
TPS54332 Switching Frequency VIN = 12 V, 25°C 800 1000 1200 kHz Minimum controllable on time VIN = 12 V, 25°C 110 135 ns Maximum controllable duty ratio
(1) Specified by design
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(1)
BOOT-PH = 6 V 90% 93%
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9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
-50 -25 0 25 50 75 100 125 150
Dmin-MinimumControllableDutyRatio-%
T -JunctionTemperature-°C
J
VIN=12V
90
100
110
120
130
140
-50 -25 0 25 50 75 100 125 150
Tonmin-MinimumControllableOnTime-ns
T -JunctionTemperature-°C
J
VIN=12V
980
990
1000
1010
1020
-50 -25 0 25 50 75 100 125 150
T -JunctionTemperature-°C
J
fsw-OscillatorFrequency-kHz
VIN=12V
0.776
0.782
0.788
0.794
0.8
0.806
0.812
0.818
0.824
-50 -25 0 25 50 75 100 125 150
Vref-VoltageReference-V
T -JunctionTemperature-°C
J
VIN=12V
0
2
4
6
8
3
8
13
18
23
28
V -InputVoltage-V
I
Isd-ShutdownCurrent- Am
T =150°C
J
T =-40°C
J
T =25°C
J
EN=0V
T -JunctionTemperature-°C
J
Rdson-OnResistance-mW
60
70
80
90
100
110
120
-50 -25 0 25 50 75 100 125 150
VIN=12V
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6.7 Typical Characteristics: Characterization Curves

TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
Figure 1. On Resistance vs Junction Temperature
Figure 3. Switching Frequency vs Junction Temperature
Figure 2. Shutdown Quiescent Current vs Input Voltage
Figure 4. Voltage Reference vs Junction Temperature
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 7
Figure 5. Minimum Controllable on Time vs Junction
Temperature
Figure 6. Minimum Controllable Duty Ratio vs Junction
Temperature
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3
8
13
18
23 28
0.75
1.25
1.75
2.25
2.75
3.25
3.75
I =3.5 A
O
V -OutputVoltage-V
O
V -InputVoltage-V
I
3 8 13 18
23 28
0
5
10
15
20
25
30
I =3.5 A
O
V -InputVoltage-V
I
V -OutputVoltage-V
O
1.9
1.95
2
2.05
2.1
-50 -25 0 25 50 75 100 125 150
I -SSChargeCurrent- A
SS
m
T -JunctionTemperature-°C
J
VIN=12V
3
3.5
4
4.5
5
5.5
6
6.5
7
3 8 13 18 23 28
V -InputVoltage-V
I
CurrentLimitThreshold- A
T =150°C
J
T =-40°C
J
T =25°C
J
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
Typical Characteristics: Characterization Curves (continued)
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Figure 7. SS Charge Current vs Junction Temperature
Figure 8. Current Limit Threshold vs Input Voltage

6.8 Typical Characteristics: Supplemental Application Curves

Figure 9. Typical Minimum Output Voltage vs Input Voltage
Figure 10. Typical Maximum Output Voltage vs Input
Voltage
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7 Detailed Description

7.1 Overview

The TPS54332 is a 28-V, 3.5-A, step-down (buck) converter with an integrated high-side, N-channel MOSFET. To improve performance during line and load transients, the device implements a constant-frequency, current mode control, which reduces output capacitance and simplifies external frequency compensation design. The TPS54332 has a pre-set switching frequency of 1 MHz.
The TPS54332 needs a minimum input voltage of 3.5 V to operate normally. The EN pin has an internal pullup current source that can be used to adjust the input voltage undervoltage lockout (UVLO) with two external resistors. In addition, the pullup current provides a default condition when the EN pin is floating for the device to operate. The operating current is 82 μA typically when not switching and under no load. When the device is disabled, the supply current is 1 μA typically.
The integrated 80-mhigh-side MOSFET allows for high-efficiency power supply designs with continuous output currents up to 3.5 A.
The TPS54332 reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by an external capacitor on the BOOT to PH pin. The boot capacitor voltage is monitored by an UVLO circuit and will turn the high-side MOSFET off when the voltage falls below a preset threshold of 2.1 V typically. The output voltage can be stepped down to as low as the reference voltage.
By adding an external capacitor, the slow-start time of the TPS54332 can be adjustable which enables flexible output filter selection.
To improve the efficiency at light load conditions, the TPS54332 enters a special pulse-skipping Eco-Mode when the peak inductor current drops below 160 mA typically.
The frequency foldback reduces the switching frequency during start-up and over current conditions to help control the inductor current. The thermal shutdown gives the additional protection under fault conditions.
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Error
Amplifier
RQ
S
Boot
Charge
Boot
UVLO
Current
Sense
Oscillator
Frequency
Shift
Gate Drive Logic
Slope
Compensation
PWM Latch
PWM
Comparator
ECO-MODE
MinimumClamp
Maximum
Clamp
Voltage
Reference
Discharge
Logic
VSENSE
COMP
PH
BOOT
VIN
GND
Thermal
Shutdown
EN
Enable
Comparator
Shutdown
Logic
Shutdown
Enable
Threshold
S
1.25V
0.8V
80mW
165C
2.1V 12 A/V
SS
Shutdown
VSENSE
1 Am
3 Am
gm=92 A/V
DCgain=800V/V
BW=2.7MHz
m
2kW
2 Am
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

7.2 Functional Block Diagram

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7.3 Feature Description

7.3.1 Fixed Frequency PWM Control

The TPS54332 uses a fixed-frequency, peak-current mode control. The internal switching frequency of the TPS54332 is fixed at 1 MHz.
7.3.2 Voltage Reference (V
ref
The voltage reference system produces a ±2% initial accuracy voltage reference (±3.5% over temperature) by scaling the output of a temperature stable band-gap circuit. The typical voltage reference is designed at 0.8 V.

7.3.3 Bootstrap Voltage (BOOT)

The TPS54332 has an integrated boot regulator and requires a 0.1-μF ceramic capacitor between the BOOT and
)
PH pin to provide the gate drive voltage for the high-side MOSFET. A ceramic capacitor with an X7R or X5R grade dielectric is recommended because of the stable characteristics over temperature and voltage. To improve dropout, the TPS54332 is designed to operate at 100% duty cycle as long as the BOOT to PH pin voltage is greater than 2.1 V typically.

7.3.4 Enable and Adjustable Input Undervoltage Lockout (VIN UVLO)

The EN pin has an internal pullup current source that provides the default condition of the TPS54332 operating when the EN pin floats.
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( )
( ) ( )
( )
SS ref
SS
SS
C nF V V
T ms =
I A
´
m
EN
START EN
V
Ren2 =
V - V
+ 1 A
Ren1
m
START STOP
V - V
Ren1 =
3 Am
EN
1.25V
VIN
+
-
Ren1
Ren2
TPS54332
1 Am 3 Am
TPS54332
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
Feature Description (continued)
The TPS54332 is disabled when the VIN pin voltage falls below internal VIN UVLO threshold. TI recommends using an external VIN UVLO to add Hysteresis unless VIN is greater than (V with Hysteresis, use the external circuitry connected to the EN pin as shown in Figure 11. Once the EN pin voltage exceeds 1.25 V, an additional 3 μA of hysteresis is added. Use Equation 1 and Equation 2 to calculate the resistor values needed for the desired VIN UVLO threshold voltages. The V voltage, the V V
should always be greater than 3.5 V.
STOP
is the input stop threshold voltage and the VENis the enable threshold voltage of 1.25 V. The
STOP
Figure 11. Adjustable Input Undervoltage Lockout
+ 2 V). To adjust the VIN UVLO
OUT
is the input start threshold
START
(1)
(2)

7.3.5 Programmable Slow-Start Using SS Pin

TI highly recommends programing the slow-start time externally because no slow-start time is implemented internally. The TPS54332 effectively uses the lower voltage of the internal voltage reference or the SS pin voltage as the power supply’s reference voltage fed into the error amplifier and will regulate the output accordingly. A capacitor (CSS) on the SS pin-to-ground implements a slow-start time. The TPS54332 has an internal pullup current source of 2 μA that charges the external slow-start capacitor. The equation for the slow­start time (10% to 90%) is shown in Equation 3 . The V
is 0.8V and the ISScurrent is 2 μA.
ref
(3)
The slow-start time should be set between 1 ms to 10 ms to ensure good start-up behavior. The slow-start capacitor should be no more than 27 nF.
If during normal operation, the input voltage drops below the VIN UVLO threshold, or the EN pin is pulled below
1.25 V, or a thermal shutdown event occurs, the TPS54332 stops switching.

7.3.6 Error Amplifier

The TPS54332 has a transconductance amplifier for the error amplifier. The error amplifier compares the VSENSE voltage to the internal effective voltage reference presented at the input of the error amplifier. The transconductance of the error amplifier is 92 μA/V during normal operation. Frequency compensation components are connected between the COMP pin and ground.

7.3.7 Slope Compensation

In order to prevent the sub-harmonic oscillations when operating the device at duty cycles greater than 50%, the TPS54332 adds a built-in slope compensation which is a compensating ramp to the switch current signal.
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Feature Description (continued)

7.3.8 Current Mode Compensation Design

To simplify design efforts using the TPS54332, the typical designs for common applications are listed in Table 1. For designs using ceramic output capacitors, proper derating of ceramic output capacitance is recommended when doing the stability analysis. This is because the actual ceramic capacitance drops considerably from the nominal value when the applied voltage increases. Advanced users may refer to the Detailed Design Procedure in the Application and Implementation section for the detailed guidelines, or use the WEBENCH tool (http://www.ti.com/lsds/ti/analog/webench/overview.page).
Table 1. Typical Designs (Referring to Simplified Schematic on Page 1)
VIN V
(V) (V) (kHz) (μH) (k) (k) (pF) (pF) (k)
12 5 1000 3.3 Ceramic 22-μF 10 1.91 18 470 24.9 12 3.3 1000 2.7 Ceramic 22-μF x 2 10 3.24 18 1800 39.2 12 5 1000 3.3 Aluminum 330-μF / 160-mohm 10 1.91 22 47 10 12 3.3 1000 2.7 Aluminum 330-μF / 160-mohm 10 3.24 39 100 29.4
OUT

7.3.9 Overcurrent Protection and Frequency Shift

The TPS54332 implements current mode control that uses the COMP pin voltage to turn off the high-side MOSFET on a cycle-by-cycle basis. Every cycle, the switch current and the COMP pin voltage are compared; when the peak inductor current intersects the COMP pin voltage, the high-side switch is turned off. During overcurrent conditions that pull the output voltage low, the error amplifier responds by driving the COMP pin high, causing the switch current to increase. The COMP pin has a maximum clamp internally, which limit the output current.
The TPS54332 provides robust protection during short circuits. There is potential for overcurrent runaway in the output inductor during a short circuit at the output. The TPS54332 solves this issue by increasing the off-time during short circuit conditions by lowering the switching frequency. The switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 V to 0.8 V on VSENSE pin. The relationship between the switching frequency and the VSENSE pin voltage is shown in Table 2.
F
sw
L
o
C
o
R
R
O1
O2
C
C
2
1
R
3
Table 2. Switching Frequency Conditions
SWITCHING FREQUENCY VSENSE PIN VOLTAGE
1 MHz VSENSE 0.6 V 1 MHz / 2 0.6 V > VSENSE 0.4 V 1 MHz / 4 0.4 V > VSENSE 0.2 V 1 MHz / 8 0.2 V > VSENSE

7.3.10 Overvoltage Transient Protection

The TPS54332 incorporates an overvoltage transient protection (OVTP) circuit to minimize output voltage overshoot when recovering from output fault conditions or strong unload transients. The OVTP circuit includes an overvoltage comparator to compare the VSENSE pin voltage and internal thresholds. When the VSENSE pin voltage goes above 109% × V below 107% × V
, the high-side MOSFET will be enabled again.
ref
, the high-side MOSFET will be forced off. When the VSENSE pin voltage falls
ref

7.3.11 Thermal Shutdown

The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 165°C. The thermal shutdown forces the device to stop switching when the junction temperature exceeds the thermal trip threshold. Once the die temperature decreases below 165°C, the device reinitiates the power-up sequence.
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7.4 Device Functional Modes

7.4.1 Operation With VIN < 3.5 V

The device is recommended to operate with input voltages above 3.5 V. The typical VIN UVLO threshold is not specified and the device may operate at input voltages down to the UVLO voltage. At input voltages below the actual UVLO voltage, the device will not switch. If EN is externally pulled up or left floating, when VIN passes the UVLO threshold the device will become active. Switching will commenced when the soft-start sequence is initiated.

7.4.2 Operation With EN Control

The enable threshold voltage is 1.25 V typical. With EN held below that voltage the device is disabled and switching is inhibited even if VIN is above its UVLO threshold. The IC quiescent current is reduced in this state. If the EN voltage is increased above the threshold while VIN is above its UVLO threshold, the device becomes active. Switching is enabled, and the slow-start sequence is initiated.

7.4.3 Eco-Mode

The device is designed to operate in pulse-skipping Eco-Mode at light-load currents to boost light-load efficiency. When the peak inductor current is lower than pulse skip threshold, the COMP pin voltage falls to 0.5 V (typical) and the device enters Eco-Mode . When the device is in Eco-Mode, the COMP pin voltage is clamped at 0.5 V internally which prevents the high-side integrated MOSFET from switching. The peak inductor current must rise above 160 mA for the COMP pin voltage to rise above 0.5 V and exit Eco-Mode. Because the integrated current comparator catches the peak inductor current only, the average load current entering Eco-Mode varies with the applications and external output filters.
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TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
www.ti.com

8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPS54332 is typically used as step down converters, which convert a voltage from 3.5 V - 28 V to a lower voltage. WEBENCH software is available to aid in the design and analysis of circuits.
TPS54231 TPS54232 TPS54233 TPS54331 TPS54332
IO(Max) 2 A 2 A 2 A 3 A 3.5 A
Input Voltage Range 3.5 V - 28 V 3.5 V - 28 V 3.5 V - 28 V 3.5 V - 28 V 3.5 V - 28 V
Switching Freq. (Typ) 570 kHz 1000 kHz 285 kHz 570 kHz 1000 kHz
Switch Current Limit (Min) 2.3 A 2.3 A 2.3 A 3.5 A 4.2 A
Pin/Package 8/SOIC 8/SOIC 8/SOIC 8/SOIC 8/SO PowerPAD™

8.2 Typical Application

Figure 12. Typical Application Schematic

8.2.1 Design Requirements

For this design example, use the following as the input parameters:
DESIGN PARAMETER EXAMPLE VALUE
Input voltage range 5 V to 15 V
Output voltage 2.5 V
Input ripple voltage 200 mV Output ripple voltage 20 mV Output current rating 3.5 A
Operating Frequency 1 MHz
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( )
OUT(MAX)
IN OUT(MAX) MAX
BULK SW
I 0.25
V = + I ESR
C f
´
D ´
´
OUT REF
R5
V = V +1
R6
é ù
´
ê ú ë û
REF
OUT REF
R5 V
R6 =
V V
´
-
TPS54332
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

8.2.2 Detailed Design Procedure

The following design procedure can be used to select component values for the TPS54332. Alternately, the WEBENCH Tool may be used to generate a complete design. The WEBENCH Tool uses an iterative design procedure and accesses a comprehensive database of components when generating a design. This section presents a simplified discussion of the design process.
8.2.2.1 Switching Frequency
The switching frequency for the TPS54332 is fixed at 1 MHz.
8.2.2.2 Output Voltage Set Point
The output voltage of the TPS54332 is externally adjustable using a resistor divider network. In the application circuit of Figure 12, this divider network is comprised of R5 and R6. The relationship of the output voltage to the resistor divider is given by Equation 4 and Equation 5.
(4)
(5)
Choose R5 to be approximately 10 k. Slightly increasing or decreasing R5 can result in closer output voltage matching when using standard value resistors. In this design, R4 = 10.2 kand R = 4.75 k, resulting in a 2.5-V output voltage.
8.2.2.3 Input Capacitors
The TPS54332 requires an input decoupling capacitor and depending on the application, a bulk-input capacitor. The typical recommended value for the decoupling capacitor is 10 μF. A high-quality ceramic type X5R or X7R is recommended. The voltage rating should be greater than the maximum input voltage. A smaller value may be used as long as all other requirements are met; however 10 μF has been shown to work well in a wide variety of circuits. Additionally, some bulk capacitance may be needed, especially if the TPS54332 circuit is not located within about 2 inches from the input voltage source. The value for this capacitor is not critical but should be rated to handle the maximum input voltage including ripple voltage, and should filter the output so that input ripple voltage is acceptable. For this design, a single 10-μF capacitor is used for the input decoupling capacitor. It is X5R dielectric rated for 25 V. The equivalent series resistance (ESR) is approximately 3 m, and the current rating is 3 A.
This input ripple voltage can be approximated by Equation 6.
(6)
Where I
OUT(MAX)
the bulk capacitor value and ESR
is the maximum load current, fSWis the switching frequency (derated by a factor of 0.8), C
is the maximum series resistance of the bulk capacitor.
MAX
BULK
is
The maximum RMS imput ripple current also needs to be checked. For worst case conditions, this can be approximated by Equation 7.
(7)
In this case, the input ripple voltage would be 98 mV and the RMS ripple current would be 1.75 A. It is also important to note that the actual input voltage ripple will be greatly affected by parasitic associated with the layout and the output impedance of the voltage source. The actual input voltage ripple for this circuit is shown in Design
Parameters and is larger than the calculated value. This measured value is still below the specified input limit of
200 mV. The maximum voltage across the input capacitors would be VIN max plus ΔVIN/2. The chosen bypass capacitor is rated for 25 V and the ripple current capacity is greater than 3 A, providing ample margin. It is important that the maximum ratings for voltage and current are not exceeded under any circumstance.
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( )
´ -
´ ´ ´
OUT IN(MAX) OUT
L(PK) OUT(MAX)
IN(MAX) OUT SW
V V V
I = I +
1.6 V L F
( )
æ ö
´ -
ç ÷
´
ç ÷
´ ´ ´
è ø
2
OUT IN(MAX) OUT
2
L(RMS) OUT(MAX)
IN(MAX) OUT SW
V V V
1
I = I +
12 V L F 0.8
( )
OUT IN(MAX) OUT
LPP
IN(MAX) OUT SW
V × V V
V × L ƒ 0.8
-
´ ´
( )
0.8
´ -
´ ´ ´ ´
OUT(MAX) IN(MAX) OUT
MIN
IN(MAX) IND OUT SW
V V V
L =
V K I F
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8.2.2.4 Output Filter Components
Two components need to be selected for the output filter, the output inductor L1 and the output capacitance. Since the TPS54332 is an externally compensated device, a wide range of filter component types and values can be supported.
8.2.2.5 Inductor Selection
To calculate the minimum value of the output inductor, use Equation 8.
(8)
K
is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
IND
In general, this value is at the discretion of the designer; however, the following guidelines may be used. For designs using low-ESR output capacitors such as ceramics, a value as high as K using higher ESR output capacitors, K
For this design example, use K
IND
= 0.2 yields better results.
IND
= 0.3 and the minimum inductor value is calculated to be 2.48 μH. For this
= 0.4 may be used. When
IND
design, a l 2.5-μH inductor is chosen. For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded.
The peak-to-peak inductor current is calculated using Equation 9.
(9)
The RMS inductor current can be found from Equation 10.
(10)
And the peak inductor current can be determined with Equation 11.
(11) (12)
For this design, the RMS inductor current is 3.51 A and the peak inductor current is 4.15 A. The chosen inductor is a Coilcraft MSS1038-252NX_ 2.5-μH. It has a saturation current rating of 7.62 A and an RMS current rating of
6.55 A, meeting these requirements. Smaller or larger inductor values can be used depending on the amount of ripple current the designer wishes to allow so long as the other design requirements are met. Larger value inductors will have lower AC current and result in lower output voltage ripple, while smaller inductor values will increase ac current and output voltage ripple. In general, inductor values for use with the TPS54332 are in the range of 1 μH to 47 μH.
8.2.2.6 Capacitor Selection
The important design factors for the output capacitor are DC voltage rating, ripple current rating, and equivalent series resistance (ESR). The DC voltage and ripple current ratings cannot be exceeded. The ESR is important because along with the inductor current it determines the amount of output ripple voltage. The actual value of the output capacitor is not critical, but some practical limits do exist. Consider the relationship between the desired closed-loop crossover frequency of the design and LC corner frequency of the output filter. In general, it is desirable to keep the closed-loop crossover frequency at less than 1/5 of the switching frequency. With high­switching frequencies such as the 1 MHz frequency of this design, internal circuit limitations of the TPS54332 limit the practical maximum crossover frequency to about 75 kHz. In general, the closed-loop crossover frequency should be higher than the corner frequency determined by the load impedance and the output capacitor. This limits the minimum capacitor value for the output filter to:
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ggm REF
DC
O
V V
G =
V
´
( )
12
OUT IN(MAX) OUT
COUT(RMS)
IN(MAX) OUT SW C
V × V V
1
I = ×
V × L × F × N
æ ö
-
ç ÷ ç ÷
è ø
( )
OPPMAX
max
LPP SW O
D 0.5
V
ESR =
I 4 F C
-
­´ ´
ú û
ù
ê ë
é
+
´´
-
=
ESR
OSW
LP POPP
R
CF
D
IV
4
)5.0(
)2/(1
max_min_ COOO
FRC ´´´= p
TPS54332
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Where ROis the output load impedance (VO/IO) and fCOis the desired crossover frequency. For a desired maximum crossover of 75 kHz the minimum value for the output capacitor is around 3.2 μF. This may not satisfy the output ripple voltage requirement. The output ripple voltage consists of two components; the voltage change due to the charge and discharge of the output filter capacitance and the voltage change due to the ripple current times the ESR of the output filter capacitor. The output ripple voltage can be estimated by:
Where COis the total effective output capacitance. The maximum ESR of the output capacitor can be determined from the amount of allowable output ripple as
specified in the initial design parameters. The contribution to the output ripple voltage due to ESR is the inductor ripple current times the ESR of the output filter, so the maximum specified ESR as listed in the capacitor data sheet is given by Equation 15.
Where V output capacitor is given by Equation 16.
OPPMAX
is the desired maximum peak-to-peak output ripple. The maximum RMS ripple current in the
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
(13)
(14)
(15)
(16)
The minimum switching frequency should be used in the above equations (derated by a factor of 0.8). For this design example, two 47-μF ceramic output capacitors are chosen for C2 and C3. These are rated at 10 V with a maximum ESR of 3 mand a ripple current rating in excess of 3 A. The calculated total RMS ripple current is 300 mA (150 mA each) and the total ESR required is 20 mor less. These output capacitors exceed the requirements by a wide margin and will result in a reliable, high-performance design. it is important to note that the actual capacitance in circuit may be less than the catalog value when the output is operating at the desired output of 2.5 V. 10-V rated capacitors are used to minimize the this reduction in capacitance due to dc voltage on the output. The selected output capacitor must be rated for a voltage greater than the desired output voltage plus ½ the ripple voltage. Any derating amount must also be included. Other capacitor types work well with the TPS54332, depending on the needs of the application.
8.2.2.7 Compensation Components
The external compensation used with the TPS54332 allows for a wide range of output filter configurations. A large range of capacitor values and types of dielectric are supported. The design example uses ceramic X5R dielectric output capacitors, but other types are supported.
A Type II compensation scheme is recommended for the TPS54332. The compensation components are chosen to set the desired closed-loop crossover frequency and phase margin for output filter components. The type II compensation has the following characteristics; a DC gain component, a low-frequency pole, and a mid­frequency zero or pole pair.
The DC gain is determined by Equation 17.
(17)
Where:
V
= 800
ggm
V
= 0.8 V
REF
The low-frequency pole is determined by Equation 18.
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kFF
CO=1
k
F
F
CO
Z=1
÷ ø
ö
ç è
æ
+= deg45
2
tan
PB
k
( )
90degPB = PM PL- -
( ) ( )
10a ap p´ ´ ´ ´ - ´ ´ ´ ´ -
CO ESR O CO O O
PL = tan 2 F R C tan 2 F R C dB
( )
SENSE CO O
Gain = 20 log 2 R F Cp- ´ ´ ´ ´
( )
P1 Z P
F = 1/ 2 R Cp´ ´ ´
( )
Z1 Z Z
F = 1/ 2 R Cp´ ´ ´
( )
p´ ´ ´
PO OO Z
F = 1/ 2 R C
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
ROA= 8.696 M. The mid-frequency zero is determined by Equation 19.
And, the mid-frequency pole is given by Equation 20.
The first step is to choose the closed-loop crossover frequency. The closed-loop crossover frequency should be less than 1/8 of the minimum operating frequency, but for the TPS54332 it is recommended that the maximum closed-loop crossover frequency be not greater than 75 kHz. Next, the required gain and phase boost of the crossover network needs to be calculated. By definition, the gain of the compensation network must be the inverse of the gain of the modulator and output filter. For this design example, where the ESR zero is much higher than the closed-loop crossover frequency, the gain of the modulator and output filter can be approximated by Equation 21.
Where:
R FCO= Closed-loop crossover frequency CO= Output capacitance
The phase loss is given by Equation 22.
SENSE
= 1 / 12
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(18)
(19)
(20)
(21)
(22)
Where:
R
= Equivalent series resistance of the output capacitor
ESR
RO= VO/I
The measured overall loop response for the circuit is given in Figure 20. Note that the actual closed-loop crossover frequency is higher than intended at about 25 kHz. This is primarily due to variation in the actual values of the output filter components and tolerance variation of the internal feed-forward gain circuitry. Overall the design has greater than 60 degrees of phase margin and will be completely stable over all combinations of line and load variability.
Now that the phase loss is known the required amount of phase boost to meet the phase margin requirement can be determined. The required phase boost is given by Equation 23.
Where PM = the desired phase margin. A zero / pole pair of the compensation network will be placed symmetrically around the intended closed-loop
frequency to provide maximum phase boost at the crossover point. The amount of separation can be determined by Equation 24 and the resultant zero and pole frequencies are given by Equation 25 and Equation 26.
O
(23)
(24)
(25)
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(26)
1
Cp
p´ ´ ´
= = 9.8 pF
2 216000 75000
1
Cz
p´ ´ ´
= = 183 pF
2 11570 75000
p´ ´ ´ ´ ´ ´ ´
W
´ ´
-6 6
2 50000 2.5 82 10 8.696 10
Rz = = 72.92 k
12 800 0.8
zP
P
RFC´´´
=
1
21p
zZ
Z
RFC´´´
=
1
21p
CO O O OA
Z
ICOMP ggm REF
2 × × F × V × C × R
R =
GM × V × V
p
TPS54332
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
The low-frequency pole is set so that the gain at the crossover frequency is equal to the inverse of the gain of the modulator and output filter. Due to the relationships established by the pole and zero relationships, the value of RZcan be derived directly by Equation 27 .
(27)
Where:
VO= Output voltage CO= Output capacitance FCO= Desired crossover frequency ROA= 8.696 M GM V
ggm
V
REF
COMP
= 800
= 0.8 V
= 12 A/V
With RZknown, CZand CPcan be calculated using Equation 28 and Equation 29.
(28)
(29)
For this design, the two 47-μF output capacitors are used. For ceramic capacitors, the actual output capacitance is less than the rated value when the capacitors have a DC bias voltage applied. This is the case in a dc/dc converter. The actual output capacitance may be as low as 54 μF. The combined ESR is approximately .001 .
Using Equation 21 and Equation 22, the output stage gain and phase loss are equivalent as:
Gain = –6.94 dB and
PL - –93.94 degrees For 70 degrees of phase margin, Equation 23 requires 63.64 degrees of phase boost.
Equation 24, Equation 25, and Equation 26 are used to find the zero and pole frequencies of:
FZ1= 11.57 kHz And FP1= 216 kHz RZ, CZ, and CPare calculated using Equation 27, Equation 28, and Equation 29.
(30)
(31)
Using standard values for R3, C6, and C7 in the application schematic of Figure 12. R3 = 75 k C6 = 180 pF C7 = 10 pF
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(32)
V = 0.118 x ((V - I x R + V ) - I x R ) - V
O(min) IN(max) Omin DS(on) max) D O(min) L D
V = 0.91 x ((V – I x R ) + V ) – (I x R ) – V
O(max) IN(min) O(max) DS(on) max D O(max) L D
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
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8.2.2.8 Bootstrap Capacitor
Every TPS54332 design requires a bootstrap capacitor, C4. The bootstrap capacitor must be 0.1 μF. The bootstrap capacitor is located between the PH pins and BOOT pin. The bootstrap capacitor should be a high­quality, ceramic type with X7R or X5R grade dielectric for temperature stability.
8.2.2.9 Catch Diode
The TPS54332 is designed to operate using an external catch diode between PH and GND. The selected diode must meet the absolute maximum ratings for the application: Reverse voltage must be higher than the maximum voltage at the PH pin, which is Vin(max) + 0.5 V. Peak current must be greater than IOUTMAX plus on half the peak-to-peak inductor current. Forward-voltage drop should be small for higher efficiencies. It is important to note that the catch diode conduction time is typically longer than the high-side FET on time, so attention paid to diode parameters can make a marked improvement in overall efficiency. Additionally, check that the device chosen is capable of dissipating the power losses. For this design, a Diodes, Inc. B340A is chosen, with a reverse voltage of 40 V, forward current of 3 A, and a forward voltage drop of 0.5 V.
8.2.2.10 Output Voltage Limitations
Due to the internal design of the TPS54332, there are both upper and lower output voltage limits for any given input voltage. The upper limit of the output voltage set point is constrained by the maximum duty cycle of 91% and is given by Equation 33.
(33)
Where:
V
I
= Minimum input voltage
IN(min)
= Maximum load current
O(max)
VD= Catch diode forward voltage
RL= Output inductor series resistance The equation assumes maximum on resistance for the internal high-side FET. The lower limit is constrained by the minimum controllable on time which may be as high as 130 ns. The
approximate minimum output voltage for a given input voltage and minimum load current is given by Equation 32.
(34)
Where:
V
I
O(min)
= Maximum input voltage
IN(max)
= Minimum load current VD= Catch diode forward voltage RL= Output inductor series resistance
This equation assumes nominal on-resistance for the high-side FET and accounts for worst case variation of operating frequency set point. Any design operating near the operational limits of the device should be carefully checked to assure proper functionality.
8.2.2.11 Power Dissipation Estimate
The following formulas show how to estimate the device power dissipation under continuous conduction mode operations. They should not be used if the device is working in the discontinuous conduction mode (DCM) or pulse-skipping Eco-Mode.
The device power dissipation includes:
1. Conduction loss: Pcon = Iout2x R
2. Switching loss: Psw = 0.55 x 10-9x VIN2x I
DS(on)
x V
OUT
OUT
/VIN
x Fsw
3. Gate charge loss: Pgc = 22.8 x 10-9x Fsw
4. Quiescent current loss: Pq = 0.082 x 10-3x VIN
Where:
I
is the output current (A).
OUT
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TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
R V
is the on-resistance of the high-side MOSFET ().
DS(on)
is the output voltage (V).
OUT
VIN is the input voltage (V). Fsw is the switching frequency (Hz). So
Ptot = Pcon + Psw + Pgc + Pq For given TA, TJ= TA+ Rth x Ptot. For given T
JMAX
= 150°C, T
AMAX
= T
– Rth x Ptot.
JMAX
Where: Ptot is the total device power dissipation (W). TAis the ambient temperature (°C). TJis the junction temperature (°C) . Rth is the thermal resistance of the package (°C/W). T
is maximum junction temperature (°C).
JMAX
T
is maximum ambient temperature (°C).
AMAX
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t-Time-500 s/divm
.75to2.5 A Step
10mV/div
V
OUT
I
OUT
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
f-Frequency-Hz
-180
-150
-120
-90
-60
-30
0
30
60
90
120
150
180
Gain
Phase
10 100
1k 10k
100k
1M
Gain-dB
Phase-deg
-0.025
-0.02
-0.015
-0.01
-0.005
0
0.005
0.01
0.015
0.02
0.025
5 6 7 8 9 10 11 12 13 14 15
I =1 A
O
V -InputVoltage-V
I
OutputRegulation-%
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.5 1 1.5 2 2.5 3 3.5
I -OutputCurrent- A
O
V =5V
I
V =12V
I
V =15V
I
OutputVoltageRegulation-%
V =2.5V
O
50
55
60
65
70
75
80
85
90
95
100
0 0.025 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.225 0.25
I -OutputCurrent- A
O
V =5V
I
Efficiency-%
V =12V
I
V =15V
I
60
65
70
75
80
85
90
95
100
0 0.5 1 1.5 2 2.5 3 3.5
I -OutputCurrent- A
O
Efficiency-%
V =2.5V
O
V =5V
I
V =12V
I
V =15V
I
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

8.2.3 Application Curves

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Figure 13. TPS54332 Efficiency
Figure 15. TPS54332 Load Regulation
Figure 14. TPS54332 Low-Current Efficiency
Figure 16. TPS54332 Line Regulation
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Figure 17. TPS54332 Transient Response
Figure 18. TPS54332 Loop Response
Product Folder Links: TPS54332
t-Time-2ms/div
V
OUT
V
IN
1V/div
5V/div
t-Time-2ms/div
PH
V
OUT
20mV/div
5V/div
t-Time-1 s/divm
PH
V
OUT
20mV/div
5V/div
t-Time-1 s/divm
PH
V
IN
5V/div
100mV/div
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TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
Figure 19. TPS54332 Output Ripple Figure 20. TPS54332 Input Ripple
Figure 21. TPS54332 Start-Up Figure 22. TPS54332 Output Ripple during Eco-Mode
Operation
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SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014
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9 Power Supply Recommendations

The devices are designed to operate from an input voltage supply range between 3.5 V and 28 V. This input supply should be well regulated. If the input supply is located more than a few inches from the converter additional bulk capacitance may be required in addition to the ceramic bypass capacitors. An electrolytic capacitor with a value of 100 μF is a typical choice.

10 Layout

10.1 Layout Guidelines

The VIN pin should be bypassed to ground with a low-ESR, ceramic bypass capacitor. Take care to minimize the loop area formed by the bypass capacitor connections, the VIN pin, and the anode of the catch diode. The typical recommended bypass capacitance is 10-μF ceramic with a X5R or X7R dielectric and the optimum placement is closest to the VIN pins and the source of the anode of the catch diode. See Figure 23 for a PCB layout example. The GND D pin should be tied to the PCB ground plane at the pin of the IC. The source of the low-side MOSFET should be connected directly to the top-side PCB ground area used to tie together the ground sides of the input and output capacitors, as well as the anode of the catch diode. The PH pin should be routed to the cathode of the catch diode and to the output inductor. Since the PH connection is the switching node, the catch diode and output inductor should be located very close to the PH pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. For operation at full rated load, the top-side ground area must provide adequate heat dissipating area. The TPS54332 uses a fused lead frame so that the GND pin acts as a conductive path for heat dissipation from the die. Many applications have larger areas of internal or back side ground plane available, and the top-side ground area can be connected to these areas using multiple vias under or adjacent to the device to help dissipate heat. The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate layout schemes, however this layout has been shown to produce good results and is intended as a guideline.
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BOOT
VSENSE
PH
VIN
GND
EN
Vout
PH
Vin
TOPSIDE GROUND AREA
OUTPUT INDUCTOR
OUTPUT FILTER CAPACITOR
BOOT CAPACITOR
INPUT BYPASS CAPACITOR
CATCH DIODE
SignalVIA
RouteBOOT CAPACITOR traceonotherlayertoprovide Widepathfortopsideground
RESISTOR DIVIDER
Feedback Trace
COMP
SS
COMPENSATION NETWORK
ThermalVIA
SLOWSTART CAPACITOR
UVLO RESISTOR DIVIDER
ExposedPowerPADarea
www.ti.com

10.2 Layout Example

TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

10.3 Estimated Circuit Area

The estimated printed circuit board area for the components used in the design of Figure 12 is 0.58 in2. This area does not include test points or connectors.

10.4 Electromagnetic Interference (EMI) Considerations

As EMI becomes a rising concern in more and more applications, the internal design of the TPS54332 takes measures to reduce the EMI. The high-side MOSFET gate-drive is designed to reduce the PH pin voltage ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used to lower the parasitics effects.
To achieve the best EMI performance, external component selection and board layout are equally important. Follow the Detailed Design Procedure to prevent potential EMI issues.
Copyright © 2009–2014, Texas Instruments Incorporated Submit Documentation Feedback 25
Figure 23. TPS54332 Board Layout
Product Folder Links: TPS54332
TPS54332
SLVS875C –JANUARY 2009–REVISED NOVEMBER 2014

11 Device and Documentation Support

11.1 Device Support

11.1.1 Development Support

For the WEBENCH Tool, go to http://www.ti.com/lsds/ti/analog/webench/overview.page.

11.2 Trademarks

Eco-Mode, PowerPAD, WEBENCH are trademarks of Texas Instruments. All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary

SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

www.ti.com
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
26 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: TPS54332
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Sep-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
TPS54332DDAR SO
Type
Power
PAD
Package Drawing
Pins SPQ Reel
Diameter
(mm)
DDA 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Quadrant
Pin1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 19-Sep-2014
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS54332DDAR SO PowerPAD DDA 8 2500 367.0 367.0 35.0
Pack Materials-Page 2
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