Dual-Channel (3-Phase CPU/1-Phase GPU) SVID, D-CAP+™ Step-Down Controller for
IMVP-7 V
1
FEATURES
2
•Intel IMVP-7 Serial VID (SVID) Compliant
with Two Integrated Drivers
CORE
•Supports CPU and GPU Outputs
•CPU Channel 1, 2, or 3 Phase
•Single-Phase GPU Channel
•Full IMVP-7 Mobile Feature Set Including
Digital Current Monitor
•8-Bit DAC with 0.250-V to 1.52-V Output Range
•Optimized Efficiency at Light and Heavy Loads
•V
•V
Overshoot Reduction (OSR)
CORE
Undershoot Reduction (USR)
CORE
•Accurate, Adjustable Voltage Positioning
•8 Independent Frequency Selections per
Channel (CPU/GPU)
•Patent Pending AutoBalance™ Phase
Balancing
•Selectable 8-Level Current Limit
•3-V to 28-V Conversion Voltage Range
•Two Integrated Fast FET Drivers w/Integrated
Boost FET
•Internal Driver Bypass Mode for Use with
DrMOS Devices
•Small 6 × 6 , 48-Pin, QFN, PowerPAD™
Package
DESCRIPTION
The TPS51640A, TPS59640 and TPS59641 are
dual-channel, fully SVID compliant IMVP-7 step-down
controllers with two integrated gate drivers. Advanced
control features such as D-CAP™+ architecture with
overlapping pulse support (undershoot reduction,
USR) and overshoot reduction (OSR) provide fast
transient response, lowest output capacitance and
high efficiency. All of these controllers also support
single-phase operation for light loads. The full
compliment of IMVP-7 I/O is integrated into the
controllers including dual PGOOD signals, ALERT
and VR_HOT. Adjustable control of V
and voltage positioning round out the IMVP-7
features. In addition, the controllers' CPU channel
includes two high-current FET gate drivers to drive
high-sideandlow-sideN-channelFETswith
exceptionally high speed and low switching loss. The
TPS51601 or TPS51601A driver is used for the third
phase of the CPU and the GPU channel.
The BOOT voltage (V
) on the TPS51640A and
BOOT
TPS59640 is 0 V. The TPS59641 is specifically
designed for a V
level of 1.1 V.
BOOT
These controllers are packaged in a space saving,
thermally enhanced 48-pin QFN. The TPS51640A is
rated tooperate from –10°Cto 105°C. The
TPS59640 and TPS59641 are rated to operate
from –40°C to 105°C.
CORE
slew rate
APPLICATIONS
•IMVP-7 V
Battery, NVDC or 3 V/5 V/12 V rails
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2D-CAP+, PowerPAD, D-CAP are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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(1)(2)
Green (RoHS and
no Sb/Br)
250
2500
V
T
A
PACKAGEPINSECO PLAN
BOOT
–10°C to 105°C0
Plastic Quad Flat
Pack (QFN)
–40°C to 105°C
1.1
ORDERING INFORMATION
(V)NUMBERMEDIAQUANTITY
048Tape-and-reel
ORDERABLETRANSPORTMINIMUM
TPS51640ARSLT250
TPS51640ARSLR2500
TPS59640RSLT250
TPS59640RSLR2500
TPS59641RSLT
TPS59641RSLTR
(3)
(3)
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(3) Product preview. Not currently available.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
VBAT–0.332
CSW1, CSW2–6.032V
CDH1 to CSW1; CDH2 to CSW2; CBST1 to CSW1; CBST2 to CSW2–0.36.0
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
VR_ON = ‘HI’, SetPS = PS35.1mA
(Note: 3-phase CPU goes to 1-phase in PS3)
REFERENCES: DAC, VREF, VBOOT AND DRVL DISCHARGE FOR BOTH CPU AND GPU
V
BOOT
V
VIDSTP
Boot voltage
VID step size5mV
0.25 ≤ V
I
V
DAC1
xVFB tolerance no load active
xPU_CORE
0.25 ≤ V
I
xPU_CORE
–40°C ≤ TA≤ 105°C
1.000V ≤ V
I
V
DAC4
V
VREF
V
VREFSRC
V
VREFSNK
V
DLDQ
xVFB tolerance above 1 V VID
VREF Output4.5 V ≤ VV5≤ 5.5 V, I
VREF output source0 µA ≤ I
VREF output sink–500 µA ≤ I
DRVL discharge thresholdSoft-stop transistor turns on at this point.200300mV
xPU_CORE
1.000V ≤ V
I
xPU_CORE
–40°C ≤ TA≤ 105°C
VOLTAGE SENSE: xVFB AND xGFB FOR BOTH CPU AND GPU
I
xVFB
I
xGFB
A
GAINGND
xVFB input bias currentV
xGFB input bias currentV
xVFB
xVFB
xGFB/GND gain1V/V
CURRENT MONITOR
V
CiMONLK
V
CIMONLO
V
CIMONMID
V
CIMONHI
Zero level current outputΣ∆CS = 0 mV, AIMON = 12 × (1+1.27)35mV
Low level current outputΣ∆CS = 15.6 mV, AIMON = 12 × (1+1.27)425mV
Mid level current outputΣ∆CS = 31.1 mV, AIMON = 12 × (1+1.27)850mV
High level current outputΣ∆CS = 62.3 mV, AIMON = 12 × (1+1.27)1700mV
over recommended free-air temperature range, VV5= V
(Unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
LOGIC (VCLK, VDIO, ALERT, VR_HOT, VR_ON) INTERFACE PINS: I/O VOLTAGE AND CURRENT
R
RSVIDL
R
RPGDL
I
VRTTLK
V
IL
V
IH
V
HYST
V
VR_ONL
V
VR_ONH
I
VR_ONH
Open drain pull down resistance4813Ω
Open drain pull down resistance xPGOOD pull-down resistance at 0.31 V3650
Open drain leakage current-20.22µA
Input logic low0.45V
Input logic high0.65V
Hysteresis voltage
(1)
VR_ON logic low0.3V
VR_ON logic high0.8V
I/O 3.3 V leakageLeakage current , V
OVERSHOOT AND UNDERSHOOT REDUCTION (OSR/USR) THRESHOLD SETTING
ALERT19O SVID interrupt line, open drain. Route between VCLK and VDIO to prevent cross-talk.
CBST146ITop N-channel FET bootstrap voltage input for CPU phase 1.
CBST239ITop N-channel bootstrap voltage input for CPU phase 2.
CCSN15
CCSN26I
CCSN39
CCOMP10O Output of GM error amplifier for the CPU converter. A resistor to VREF sets the droop gain.
CCSP14
CCSP27Ior inductor DCR sense network. Tie CCSP3, 2 or 1 (in that order) to V3R3 to disable the phase. Tie CCSP1 to
CCSP38
CDH147O Top N-channel FET gate drive output for CPU phase 1.
CDH238O Top N-channel FET gate drive output for CPU phase 2.
CDL144OSynchronous N-channel FET gate drive output for CPU phase 1.
CDL241OSynchronous N-channel FET gate drive output for CPU phase 2.
Negative current sense inputs for the CPU converter. Connect to the most negative node of current sense
resistor or inductor DCR sense network. CCSN1 has a secondary OVP comparator.
Positive current sense inputs for the CPU converter. Connect to the most positive node of current sense resistor
V3R3 to run the GPU converter only.
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TPS51640A, TPS59640, TPS59641
SLUSAQ2 –JANUARY 2012
PIN
NAMENO.
I/ODESCRIPTION
Voltage divider to VREF. A resistor to GND sets the operating frequency of the CPU converter. The voltage level
CF-IMAX13Isets the maximum operating current of the CPU converter. The IMAX value is an 8-bit A/D where V
I
/ 255. Both are latched at start-up.
MAX
CGFB12I
CIMON3O
COCP-I2I
Voltage sense return tied for the CPU converter. Tie to GND with a 10-Ω resistor to close feedback when the
microprocessor is not in the socket.
Analog current monitor output for the CPU converter. V
220-nF capacitor to GND for stability.
Resistor to GND (R
voltage divider to CIMON. Resistor ratio sets the IMON gain (see CIMON pin description).
) selects 1 of 8 OCP levels (per phase, latched at start-up) of the CPU converter. Also,
COCP
= ΣVCS× ACS × (1 + R
CIMON
CIMON/RCOCP
= V
IMAX
REF
). Connect a
CPGOOD17O IMVP-7_PWRGD output for the CPU converter. Open-drain.
CSW145I/O Top N-channel FET gate drive return for CPU phase 1.
CSW240I/O Top N-channel FET gate drive return for CPU phase 2.
CPWM336O PWM control for the external driver, 5V logic level.
CSKIP35O
CTHERM1I/O
CVFB11I
Skip mode control of the external driver for the CPU converter. A logic HI = FCCM, LO = SKIP. R to GND selects
1 of 8 OSR/USR levels. 0.1 V < V
< 0.3 V at start-up turns OSR off.
CSKIP
Thermal sensor connection for the CPU converter. A resistor connected to VREF forms a divider with an NTC
thermistor connected to GND.
Voltage sense line tied directly to V
feedback when µP is not in the socket. The soft-stop transistor is on this pin
of the CPU converter. Tie to V
CORE
with a 10-Ω resistor to close
CORE
Negative current sense input for the GPU converter. Connect to the most negative node of current sense resistor
GCSN28Ior inductor DCR sense network. GCSN has a secondary OVP comparator and includes the soft-stop pull-down
transistor.
GCSP29I
Positive current sense input for the GPU converter. Connect to the most positive node of current sense resistor
or inductor DCR sense network. Tie to V3R3 to disable the GPU converter.
GCOMP27O Output of gMerror amplifier for the GPU converter. A resistor to VREF sets the droop gain.
GGFB25I
Voltage sense return tied for the GPU converter. Tie to GND with a 10-Ω resistor to close feedback when the
microprocessor is not in the socket.
24IVoltage divider to VREF. R to GND sets the operating frequency of the GPU converter. The voltage level sets
GF-IMAXthe maximum operating current of the GPU converter. The IMAX value is an 8-bit A/D where V
I
/ 255. Both are latched at start-up.
MAX
GIMON
GOCP-I
30O Analog current monitor output for the GPU converter. V
220-nF capacitor to GND for stability.
31IVoltage divider to GIMON. Resistor ratio sets the IMON gain (see GIMON pin). Resistor to GND (R
1 of 8 OCP levels (per phase, latched at start-up) of the GPU converter.
GIMON
= V
ISENSE
× (1 + R
GIMON/RGOCP
= V
IMAX
REF
). Connect a
GOCP
×
) selects
GPGOOD23O IMVP-7_PWRGD output for the GPU converter. Open-drain.
GPWM34O PWM control for the external driver, 5-V logic level.
GSKIP
GTHERM
GVFB
33O Skip mode control of the external driver for the GPU converter, 5-V logic level. Logic HI = FCCM, LO = SKIP. R
to GND selects 1 of 8 OSR/USR levels. 0.1 V < V
< 0.3 V at start-up turns OSR off.
GSKIP
32I/O Thermal sensor input for the GPU converter. A resistor connected to VREF forms a divider with an NTC
thermistor connected to GND.
26IVoltage sense line tied directly to V
when the microprocessor is not in the socket. The soft-stop transistor is on this pin
of the GPU converter. Tie to V
GFX
with a 10-Ω resistor to close feedback
GFX
PGND42–Synchronous N-channel FET gate drive return.
SLEWA
V5
V5DRV
22IThe voltage at start-up sets 1 of 7 slew rates for both converters. The SLOW rate is SLEWRATE/4. Soft-start
and soft-stop rates are SLEWRATE/8. This value is latched at start-up. Tie to GND to disable SCLK timer.
48I5-V power input for analog circuits; connect through resistor to 5-V plane and bypass to GND with ≥1 µF ceramic
capacitor
43IPower input for the gate drivers; connected with an external resistor to V5F; decouple with a ≥2.2 µF ceramic
capacitor.
V3R315I3.3-V power input; bypass to GND with ≥1 µF ceramic cap.
VBAT
37IProvides VBAT information to the on-time circuits for both converters. A 10-kΩ series resistor protects the
adjacent pins from inadvertent shorts due to solder bridges or mis-probing during test.
VCLK18ISVID clock. 1-V logic level.
VDIO20I/O SVID digital I/O line. 1-V logic level.
VREF14O 1.7-V, 500-µA reference. Bypass to GND with a 0.22-µF ceramic capacitor.
VR_ON16IIMVP-7 VR enable; 1V I/O level; 100-ns de-bounce. Regulator enters controlled soft-stop when brought low.
VR_HOT
PADGND–Thermal pad and analog circuit reference; tie to a quiet area in the system ground plane with multiple vias.
I/ODESCRIPTION
21O IMVP-7 thermal flag open drain output – active low. Typically pulled up to 1-V logic level through 56 Ω. Fall time
< 100 ns. 1-ms de-glitch using consecutive 1-ms samples.
The TPS51640A, TPS59640, and TPS59641 are a DCAP+™ mode adaptive on-time controllers.
The output voltage is set using a DAC that outputs a reference in accordance with the 8-bit VID code defined in
Intel IMVP-7 PWM Specification document. In adaptive on-time converters, the controller varies the on-time as a
function of input and output voltage to maintain a nearly constant frequency during steady-state conditions. In
conventional voltage-mode constant on-time converters, each cycle begins when the output voltage crosses to a
fixed reference level. However, in these devices, the cycle begins when the current feedback reaches an error
voltage level which corresponds to the amplified difference between the DAC voltage and the feedback output
voltage. In the case of two-phase or three-phase operation, the current feedback from all the phases is summed
up at the output of the internal current-sense amplifiers.
This approach has two advantages:
•The amplifier DC gain sets an accurate linear load-line; this is required for CPU core applications.
•The error voltage input to the PWM comparator is filtered to improve the noise performance.
In addition, the difference of the DAC-to-output voltage and the current feedback goes through an integrator to
give a more or less linear load-line even at light loads where the inductor current is in discontinuous conduction
mode (DCM).
In a steady-state condition, the phases of the TPS51640A, TPS59640, and TPS59641 switch 180°
phase-displacement for two-phase mode and 120° phase-displacement for three-phase mode. The phase
displacement is maintained both by the architecture (which does not allow both high-side gate drives to be on in
any condition except transients) and the current ripple (which forces the pulses to be spaced equally). The
controller forces current sharing adjusting the on-time of each phase. Current balancing requires no user
intervention, compensation, or extra components.
After the 5-V and the 3.3-V power are applied to the controller, the controller must be enabled by the VR_ON
signal going high to the VCCIO logic level. At this time, the following information is latched and cannot be
changed anytime during operation. The ELECTRICAL CHARACTERISTICS table defines the values of each of
the selections.
•Operating Frequency. The resistor from CF-IMAX pin to GND sets the frequency of the CPU channel. The
resistor from GF-IMAX to GND sets the frequency of the GPU channel. See the ELECTRICAL
CHARACTERISTICS table for the resistor settings corresponding to each frequency selection. It is to be
noted that the operating frequency is a quasi-fixed frequency in the sense that the ON time is fixed based on
the input voltage (at the VBAT pin) and output voltage (set by VID). The OFF time varies based on various
factors such as load and power-stage components.
•Maximum Current Limit (I
voltage on the CF-IMAX pin. The I
the GF-IMAX pin.
•Overcurrent Protection (OCP) Level. The resistor from COCP-I to GND sets the OCP level of the CPU
channel. The resistor from GOCP-I to GND sets the OCP level of the GPU channel.
•Current Monitor (IMON) Gain and Voltage. The resistor from CIMON to COCP-I sets the CIMON gain and
the CIMON voltage for the CPU channel. The resistor from GIMON to GOCP-I sets the GIMON gain and the
GIMON voltage for the GPU channel.
•Overshoot Reduction (OSR) and Undershoot Reduction (USR) Levels. The resistor from the CSKIP pin
to GND sets the OSR and USR for the CPU channel. The resistor from the GSKIP pin to GND sets the OSR
and USR level for GPU channel. The OSR can be disabled for CPU and/or GPU by setting a voltage of
approximately 200 mV on the corresponding xSKIP pin. This is accomplished by connecting a resistor from
VREF to the xSKIP pin.
•Slew Rate. The SetVID-Fast slew rate is set by the voltage on the SLEWA pin. The rate is the same for both
the CPU and GPU channels. The SetVID-Slow is ¼ of the SetVID-Fast rate.
) Information. The I
CC(max)
CC(max)
CC(max)
information of the CPU, which can be set by the
information of the GPU channel, which can be set by the voltage on
SLUSAQ2 –JANUARY 2012
CPU
(Active Phases)
GPU
(Active Phases)
Table 2. Key Selections Summary
SELECTION
RESISTANCE (kΩ)
20LowestLowest
24
30
39
56
75
100
150HighestHighest
(1) See ELECTRICAL CHARACTERISTICS table for complete settings and values.
Referring to the FUNCTIONAL BLOCK DIAGRAM and Figure 60, in continuous conduction mode, the converter
operates as shown in Figure 60.
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Figure 60. D-CAP+ Mode Basic Waveforms
Starting with the condition that the hig-side FETs are off and the low-side FETs are on, the summed current
feedback (I
) is higher than the error amplifier output (V
SUM
COMP
). I
falls until it reaches the V
SUM
COMP
level, which
contains a component of the output ripple voltage. The PWM comparator senses where the two waveform values
cross and triggers the on-time generator. This generates the internal SW_CLK. Each SW_CLK corresponds to
one switching ON pulse for one phase.
During single-phase operation, every SW_CLK generates a switching pulse on the same phase. Also, I
SUM
voltage corresponds to just a single-phase inductor current.
During multi-phase operation, the SW_CLK is distributed to each of the phases in a cycle. Using the summed
inductor current and then cyclically distributing the ON-pulses to each phase automatically yields the required
interleaving of 360/N, where N is the number of phases.
Current Sensing
The TPS51640A, TPS59640 and TPS59641 provide independent channels of current feedback for every phase.
This increases the system accuracy and reduces the dependence of circuit performance on layout compared to
an externally summed architecture. The current sensing topology can be Inductor DCR Sensing, which yields the
best efficiency, or Resistor Current Sensing, which provides the most accuracy across wide temperature range.
DCR sensing can be optimized by using a NTC thermistor to reduce the variation of current sense with
temperature.
The pins CCSP1, CCSN1, CCSP2, CCSN2 and CCSP3, CCSN3 are used for the three phases of the CPU
channel. The pins GCSP and GCSN are used for the single-phase GPU channel.
is the effective current sense resistance, whether a sense resistor or inductor DCR is used
CS(eff)
•ICCis the load current
•R
is the value of resistor from the DROOP pin to VREF
DROOP
•GMis the gain of the droop amplifier(1)
Load Transients
When there is a sudden load increase, the output voltage immediately drops. This is reflected as a rising voltage
on the COMP pin. This forces the PWM pulses to come in sooner and more frequent which causes the inductor
current to rapidly increase. As the inductor current reaches the new load current, a steady-state operating
condition is reached and the PWM switching resumes the steady-state frequency.
When there is a sudden load release, the output voltage rises. This is reflected as a falling voltage on the COMP
pin. This delays the PWM pulses until the inductor current reaches the new load current level. At that point,
switching resumes and steady-state switching continues.
For simplicity, neither Figure 62, nor Figure 63 show the ripple on the Output V
Figure 62. Operating Waveforms During LoadFigure 63. needs a title
Transient
Overshoot Reduction (OSR)
In low duty-cycle synchronous buck converters, an overshoot condition results from the output inductor having a
too little voltage (V
In Figure 64, a single phase converter is shown for simplicity. In an ideal converter, with typical input voltage of
12 V and 1.2-V output, the inductor has 10.8 V (12 V – 1.2 V) to respond to a transient load increase, but only
1.2 V with which to respond once the load releases.
) with which to respond to a transient load release.
CORE
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Figure 64. Synchronous Converter
When the overshoot reduction feature is enabled, the output voltage increases beyond a value that corresponds
to a voltage difference between the ISUM voltage and the COMP voltage, exceeding the specified OSR voltage
specified in the ELECTRICAL CHARACTERISTICS. At that instant, the low-side drivers are turned OFF. When
the low-side driver is turned OFF, the energy in the inductor is partially dissipated by the body diodes. As the
overshoot reduces, the low-side drivers are turned ON again.
Figure 65 shows the overshoot without OSR. Figure 66 shows the overshoot with OSR. The overshoot reduces
by approximately 23 mV. This shows that reduced output capacitance can be used while continuing to meet the
specification. Note the low-side driver turning OFF briefly during the overshoot.
When the transient load increase becomes quite large, it becomes difficult to meet the energy demanded by the
load especially at lower input voltages. Then it is necessary to quickly increase the energy tin the inductors
during the transient load increase. This is achieved in these devices by enabling pulse overlapping. In order to
maintain the interleaving of the multi-phase configuration and yet be able to have pulse-overlapping during
load-insertion, the undershoot reduction (USR) mode is entered only when necessary. This mode is entered
when the difference between COMP voltage and ISUM voltage exceeds the USR voltage level specified in the
ELECTRICAL CHARACTERISTICS table.
Figure 67 shows the performance with undershoot reduction. Figure 68 shows the performance without
undershoot reduction and that it is possible to eliminate undershoot by enabling the undershoot reduction. This
allows reduced output capacitance to be used and still meet the specification.
When the transient condition is over, the interleaving of the phases is resumed. For Figure 67, note the
overlapping pulses for Phase 1 and Phase 2 with USR enabled.
SLUSAQ2 –JANUARY 2012
Figure 67. Performance for a 43-A Load TransientFigure 68. Performance for a 43-A Load Transient
Release Without USR EnabledRelease With USR Enabled
A single-phase GPU operates in a similar way, but instead of pulse-overlap in multi-phase CPU, there is pulse
stretching to provide the needs of the transient load increase when USR is enabled.
The basic mechanism for current sharing is to sense the average phase current, then adjust the pulse width of
each phase to equalize the current in each phase. (See Figure 69.)
The PWM comparator (not shown) starts a pulse when the feedback voltage meets the reference. The VBAT
voltage charges C
reference, normally the DAC voltage (V
The circuit operates in the following fashion, using Figure 69 as the block diagram. First assume that the 5-µs
averaged value of I1 = I2 = I3. In this case, the PWM modulator terminates at V
is delivered to the system. If instead, I1 > I
Phase 1 is shortened, reducing the current in Phase 1 to compensate. If I1 < I
produced, again compensating on a pulse-by-pulse basis.
t(ON)
through R
. The pulse is terminated when the voltage at C
t(ON)
DAC
).
, then an offset is subtracted from V
AVG
matches the t
t(ON)
, and the normal pulse width
DAC
, and the pulse width for
DAC
, then a longer pulse is
AVG
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(ON)
Figure 69. Schematic Representation of AutoBalance Current Sharing
Dynamic VID and Power-State Changes
In IMVP-7, there are 3 basic types of VID changes:
•SetVID-Fast
•SetVID-Slow
•SetVID-Decay
SetVID-Fast change and a SetVID-Slow change automatically puts the power state in PS0. A SetVID-Decay
change automatically puts the power state in PS2.
The CPU operates in the maximum phase mode when it is in PS0. This means when the CPU channel of the
controller is configured as 3-phase, all 3 phases are active in PS0. When configured in 2-phase mode, the two
phases are active in PS0. But in PS1, PS2 and PS3, the operation is in single-phase mode. Additionally, the
CPU channel in PS0 mode operates in forced continuous conduction mode (FCCM). But in PS1, PS2 and PS3,
the CPU channel operates in diode emulation (DE) mode for additional power savings and higher efficiency.
The single-phase GPU section always operates in diode emulation (DE) mode in all PS states.
The slew rate for a SetVID-Fast is the slew rate set at the SLEWA pin. This slew rate is defined in the
ELECTRICAL CHARACTERISTICS table. The SetVID-Slow is ¼ of the SetVID-Fast slew rate. On a
SetVID-Decay the output voltage decays by the rate of the load current or 1/8 of the slew rate whichever is
slower.
Additionally, on a SetVID-Fast change for a VID-up transition, the gain of the gMamplifier is increased to speed
up the response of the output voltage to meet the Intel timing requirement. So, it is possible to observe an
overshoot at the output voltage on a VID-up transition. This overshoot is allowed by the Intel specification.
The TPS51640A, TPS59640, and TPS59641 incorporate two internal strong, high-performance gate drives with
adaptive cross-conduction protection. These drivers are for two phases in the CPU channel. The third phase of
the CPU and the single-phase GPU channel require external drivers.
The internal driver in these devices uses the state of the CDLx and CSWx pins to be sure the high-side or
low-side FET is OFF before turning the other ON. Fast logic and high drive currents (up to 8-A typical) quickly
charge and discharge FET gates to minimize dead-time to increase efficiency. The high-side gate driver also
includes an integrated boost FET instead of merely a diode to increase the effective drive voltage for higher
efficiency. A zero-crossing detection logic, which detects the switch-node voltage before turning OFF the low-side
FET, is used to minimize losses during DCM operation.
Input Under Voltage Protection (5V and 3.3V)
The TPS51640A, TPS59640, and TPS59641 continuously monitor the voltage on the V5DRV, V5 and V3R3 pin
to be sure the value is high enough to bias the device properly and provide sufficient gate drive potential to
maintain high efficiency. The converter starts with approximately 4.4-V and has a nominal 200 mV of hysteresis.
The input (V
approximately 3 x V
) does not have a UVLO function, so the circuit operates with power inputs as low as
BAT
CORE
.
Power Good (CPGOOD and GPGOOD)
These devices have two open-drain power good pins that follow the requirements for IMVP-7. CPGOOD is used
for the CPU channel output voltage and GPGOOD is used for the GPU channel output voltage. Both of these
signals are active high. The upper and the lower limits for the output voltage for xPGOOD active are:
•Upper: V
•Lower : V
xPGOOD goes inactive (low) as soon as the VR_ON pin is pulled low or an undervoltage condition on V5 or
V3R3 is detected. The xPGOOD signals are masked during DAC transitions to prevent false triggering during
voltage slewing.
DAC
DAC
+220 mV
–315 mV
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Output Under Voltage Protection
Output undervoltage protection works in conjunction with the current protection described below. If V
below the low PGOOD threshold, then the drivers are turned OFF until VR_ON is cycled.
CORE
drops
Overcurrent Protection
The TPS51640A, TPS59640, and TPS59641 use a valley current limiting scheme, so the ripple current must be
considered. The DC current value at OCP is the OCP limit value plus half of the ripple current. Current limiting
occurs on a phase-by-phase and pulse-by-pulse basis. If the voltage between xCSPx and xCSNx is above the
OCP value, the converter delays the next ON pulse until it drops below the OCP limit. For inductor current
sensing circuits, the voltage between xCSPx and xCSNx is the inductor DCR value multiplied by the resistor
divider which is part of the NTC compensation network. As a result, a wide range of OCP values can be obtained
by changing the resistor divider value. In general, use the highest OCP setting possible with the least attenuation
in the resistor divider to provide as much signal to the device as possible. This provides the best performance for
all parameters related to current feedback.
In OCP mode, the voltage drops until the UVP limit is reached. Then, the converter sets the xPGOOD to inactive,
and the drivers are turned OFF. The converter remains in this state until the device is reset by the VR_ON.
Overvoltage Protection
An OVP condition is detected when V
sets xPGOOD inactive, and turns ON the drive for the Low-side FET. The converter remains in this state until the
device is reset by cycling VR_ON. However, because of the dynamic nature of IMVP-7 systems, the +220 mV
OVP threshold is blanked much of the time. In order to provide protection to the processor 100% of the time,
there is a second OVP level fixed at 1.7 V which is always active. If the fixed OVP condition is detected, the
PGOOD are forced inactive and the low-side FETs are tuned ON. The converter remains in this state until
VR_ON is cycled.
Two types of thermal protection are provided in these devices:
•VR_HOT
•Thermal Shutdown
VR_HOT
The VR_HOT signal is an Intel-defined open-drain signal that is used to protect the V
VR_HOT, place an NTC thermistor at the hottest area of the CPU channel and connect it from CTHERM pin to
GND. Similarly for GPU channel, place the NTC thermistor at the hottest area and connect it from GTHERM to
GND. Also, connect a resistor from VREF to GTHERM and CTHERM. As the temperature increases, the
xTHERM voltage drops below the THERM threshold, VR_HOT is activated. A small capacitor may be connected
to the xTHERM pins for high frequency noise filtering.
lists the thermal zone register bits based on the xTHERM pin voltage.
Table 5. Thermal Zone Register Bits
OUTPUT ISVR_HOTxTHERM THRESHOLD VOLTAGE FOR THE TEMPERATURE
SHUTDOWNASSERTEDZONE REGISTER BITS TO BE ASSERTED.
When the xTHERM pin voltage continues to drop even after VR_HOT is asserted, the drivers turn OFF and the
output is shutdown. These devices also have an internal temperature sensor. When the temperature reaches a
nominal 155°C, the device shuts down until the temperature cools approximately 20°C. Then, the circuit can be
re-started by cycling VR_ON.
SVID ALERT ASSERTED
SLUSAQ2 –JANUARY 2012
power chain. To use
CORE
Current Monitor, IMON
The TPS51640A, TPS59640, and TPS59641 includes a current monitor (IMON) function each for CPU channel
and GPU channel. The current monitor puts out an analog voltage proportional to the output current on the
xIMON pins.
The current monitor function is tied with the OCP selection resistors. The R
from COCP-I and GOCP-I respectively to select the OCP levels. R
set the CIMON gain. Similarly, R
is the resistor from GIMON to GOCP-I to set the GIMON gain.
GIMON
is the resistor from CIMON to COCP-I to
CIMON
The calculation for the CIMON voltage is shown in Equation 2. The calculation for the GIMON voltages is shown
in Equation 3.
where
•ACSis given in the ELECTRICAL CHARACTERISTICS table
•Σ V
•V
is the sum of the DC voltages at the inputs to the CPU channel current sense amplifiers
CCS
is the DC voltage at the GPU channel current sense amplifier(3)
GCS
For the current monitor function to be stable, connect a 220-nF capacitor from CIMON and GIMON to GND.
The TPS51640 controller allows the user to set the maximum processor current with the multi-function pins
CF-IMAX and GF-IMAX. The voltage on the CF-IMAX and GF-IMAX at start-up sets the maximum processor
current (I
) for CPU and GPU respectively.
CC(max)
The RCFand RGFare resistors to GND from CF-IMAX and GF-IMAX respectively to select the frequency setting.
R
Equation 4 describes the setting the I
I
is the resistor from VREF to CF-IMAX and R
CIMAX
CC(max)
for the GPU channel.
CC(max)
is the resistor from VREF to GF-IMAX.
GIMAX
for the CPU channel and Equation 5 describes the setting the
(4)
(5)
Internal Driver Bypass Mode
The controller can be configured to operate in internal driver bypass mode for use with DrMOS type devices and
driver-integrated PowerBlock devices. Consider the following items when designing for operation in this mode.
•Tie CSW2, CSW1 to V5DRV.
•CDL1 becomes the PWM input to the Phase 1 DrMOS device (or external driver)
•CDL2 becomes the PWM input to the Phase 2 DrMOS device (or external driver)
•CSKIP pin becomes the input to the SKIP/FCCM pin of the DrMOS device (or external driver)
•The Phase-2 and Phase-3 DrMOS device (or the external driver) must be configured in FCCM mode.
The design procedure using the TPS51640A, TPS59640, and TPS59641 is very simple . An excel-based
component value calculation tool is available. Contact your local TI representative to get a copy of the
spreadsheet.
The procedure is explained here below with the following design example:
SLUSAQ2 –JANUARY 2012
CPU V
No. of phases31
Input Voltage Range9 V to 20 V9 V to 20 V
VHFM0.9 V1.23 V
I
CC(max)
IDYN-MAX66 A20 A
ICC-TDC5221.5
Load-line1.9 mV/A3.9 mV/A
Fast Slew Rate (minimum)10 mV/µs10 mV/µs
SPECIFICATIONSGFX V
CORE
94 A33 A
SPECIFICATIONS
CORE
Step One: Select Switching Frequency.
The CPU channel switching frequency is selected by a resistor from CF-IMAX to GND (RCF) and GPU channel
switching frequency is selected by a resistor from GF-IMAX to GND (RGF). The frequency is an approximate
frequency and is expected to vary based on load and input voltage.
SELECTION RESISTANCE (kΩ)
20250275
24300330
30350385
39400440
56450495
75500550
100550605
150600660
CPU CHANNEL FREQUENCYGPU CHANNEL FREQUENCY
(kHz)(kHz)
For this design, the switching frequency for CPU channel is chosen to be 300 kHz and GPU channel is chosen to
be 385 kHz. Therefore,
RCF= 24 kΩ and RGF= 30 kΩStep Two: Set I
The I
CC(max)
resistors from VREF to CF-IMAX (R
CC(max)
is set by the voltage on CF-IMAX for CPU channel and GF-IMAX for GPU channel. This is set by the
) and from VREF to GF-IMAX (R
CMAX
GMAX
)
From Equation 4 and Equation 5,
R
= 42.2 kΩ and R
CMAX
GMAX
= 200 kΩ.
Step Three: Set the Slew Rate
The slew rate is set by the voltage setting on SLEWA pin. For a minimum 10 mV/ms slew rate, the voltage on the
SLEWA pin must be: 0.8 V. This is set by a resistor divider on SLEWA pin from VREF. The low-side resistor is
chosen to be 150 kΩ and the high-side resistor is calculated as 169 kΩ.
Step Four: Determine inductor value and choose inductor.
Smaller values of inductor have better transient performance but higher ripple and lower efficiency. Higher values
have the opposite characteristics. It is common practice to limit the ripple current to 20% to 40% of the maximum
current per phase. In this case, we use 30%:
In this equation,
V = V
An inductance value of 0.36 µH is chosen as this is a commonly used inductor for V
IN-MAX
– V
= 19. 1V; dT = V
HFM
HFM
/ (F x V
) = 150 ns; Ipp= 9.4A. So, calculating, L = 0.304 µH.
IN-MAX
CORE
application. The
inductor must not saturate during peak loading conditions.
The factor of 1.2 allows for current sensing and current limiting tolerances; the factor of 1.25 is the Intel 25%
momentary OCP requirement.
The chosen inductor should have the following characteristics:
•An inductance to current curve ratio equal to 1 (or as close possible). Inductor DCR sensing is based on the
idea L/DCR is approximately a constant through the current range of interest.
•Either high saturation or soft saturation.
•Low DCR for improved efficiency, but at least 0.7 mΩ for proper signal levels.
•DCR tolerance as low as possible for load-line accuracy.
For this application, a 0.36-µH, 0.825-mΩ inductor is chosen. Because the per phase current for GPU is same as
CPU, the same inductor for GPU channel is chosen.
Step Five: Determine current sensing method.
The TPS51640A, TPS59640, and TPS59641 support both resistor sensing and inductor DCR sensing. Inductor
DCR sensing is chosen. For resistor sensing, substitute the resistor value (0.75 mΩ recommended for a 3-phase
94-A application) for RCS in the subsequent equations and skip Step Four.
Step Six: Design the thermal compensation network and selection of OCP.
In most designs, NTC thermistors are used to compensate thermal variations in the resistance of the inductor
winding. This winding is generally copper, and so has a resistance coefficient of 3900 PPM/°C. NTC thermistors,
on the other hand, have very non-linear characteristics and need two or three resistors to linearize them over the
range of interest. The typical DCR circuit is shown in Figure 70.
should be a capacitor type which is stable over temperature. Use X7R or better dielectric (C0G
SEQU
, R
NTC
, R
SERIES
and R
PAR
preferred).
Since calculating these values by hand is difficult, TI has a spreadsheet using the Excel Solver function available
to calculate them. Contact a local TI representative to get a copy of the spreadsheet.
In this design, the following values are input to the spreadsheet:
•L = 0.36 µH
•R
•Load Line, R
= 0.825 mΩ
DCR
IMVP
= -1.9 mΩ
•Minimum overcurrent limit = 112 A
•Thermistor R25= 100 kΩ and "B" value = 4250 kΩ
The spreadsheet then calculates the OCP (overcurrent protection) setting and the values of R
R
PAR
, and C
. In this case, the OCP setting is the resistor value selection of 56 kΩ from COCP-I to GND and
SENSE
GOCP-I to GND. The nearest standard component values are:
•R
•R
•R
•C
SEQU
SERIES
PAR
SENSE
= 17.8 kΩ;
= 28.7 kΩ;
= 162 kΩ
=33 nF
Note the effective divider ratio for the inductor DCR. The effective current sense resistance (R
Equation 12.
SLUSAQ2 –JANUARY 2012
(9)
(10)
(11)
, R
SEQU
CS(eff)
SERIES
) is shown in
,
where
R
CS(eff)
•R
is 0.66 mΩ.
is the series/parallel combination of R
P_N
Step Seven: Set current monitor (IMON) setting resistor.
After the OCP selection resistor is selected in Step 6, the IMON is set by the resistor from CIMON to COCP-I
(R
R
) and GIMON to GOCP-I (R
CIMON
= 71.5 kΩ and R
CIMON
GIMON
GIMON
= 309 kΩ
). Based on Equation 2 and Equation 3,
Step Eight: Set the load line.
The load-line for CPU channel is set by the resistor, R
channel is set by the resistor, R
GDROOP
from the GCOMP pin to VREF. Using the Equation 1, the droop setting
resistors are calculated in Equation 14 and Equation 15.
Step Nine: Programming the CTHERM and GTHERM pins.
The CTHERM and GTHERM pins should be set so that the resistor divider voltage would be greater than 458
mV at normal operation. For VR_HOT to be asserted, the xTHERM pin voltage should fall below 458 mV. The
NTC resistor from xTHERM to GND is chosen as 100 kΩ with a B of 4250K. With this, for a VR_HOT assertion
temperature of 105°C, the resistor from xTHERM to VREF can be calculated as 15.4 kΩ.
Step Ten: Determine the output capacitor configuration.
For the output capacitor, the Intel Power Delivery guideline gives the output capacitor recommendations. Using
these devices, it is possible to meet the load transient with lower capacitance by using the OSR and USR
feature. Eight settings are available and this selection has to be tuned based on transient measurement.
Because the voltage and current feedback signals are fully differential it is a good idea to double check their
polarity.
1. CCSP1/CCSN1
2. CCSP2/CCSN2
3. CCSP2/CCSN2
4. GCSP/GCSN
5. VCCSENSE to CVFB/VSSSENSE to CGFB (for CPU)
6. VCCGTSENSE to GVFB/VSSGTSENSE to GGFB (for GPU)
Also, note the order of the current sense inputs on Pin 4 to Pin 9 as the second phase has a reverse order.
CAUTION
Separate noisy driver interface lines from sensitive analog interface lines: (This is the
MOST CRITICAL LAYOUT RULE)
The TPS51640A, TPS59640, and TPS59641 make this as easy as possible. The pin-out arrangement for
TPS51640A is shown in Figure 71. The driver outputs clearly separated from the sensitive analog and digital
circuitry. The driver has a separate PGND and this should be directly connected to the decoupling capacitor that
connects from V5DRV to PGND. The thermal pad of the package is the analog ground for these devices and
should NOT be connected directly to PGND (Pin 42).
Figure 71. TPS51640A Pin-out Arranged by Pin Function
UDG-11038
V
CORE
LL
x
NoisyQuiet
Inductor
Outline
R
SEQ
Thermistor
R
SERIES
CSNx
CSPx
TPS51640A, TPS59640, TPS59641
SLUSAQ2 –JANUARY 2012
Given the physical layout of most systems, the current feedback (xCSPx, xCSNx) may have to pass near the
power chain. Clean current feedback is required for good load-line, current sharing, and current limiting
performance of these devices, so please take the following precautions:
•Make a Kelvin connection to the pads of the resistor or inductor used for current sensing. See Figure 72 for a
layout example.
•Run the current feedback signals as a differential pair to the device.
•Run the lines in a quiet layer. Isolate them from noisy signals by a voltage or ground plane.
•Put the compensation capacitor for DCR sensing (C
) as close to the CS pins as possible.
SENSE
•Place any noise filtering capacitors directly underneath these devices and connect to the CS pins with the
shortest trace length possible.
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Figure 72. Make Kelvin Connections to the Inductor for DCR Sensing
Figure 73 shows the primary current loops in each phase, numbered in order of importance.
The most important loop to minimize the area of is Loop 1, the path from the input capacitor through the high and
low side FETs, and back to the capacitor through ground.
Loop 2 is from the inductor through the output capacitor, ground and Q2. The layout of the low side gate drive
(Loops 3a and 3b) is important. The guidelines for gate drive layout are:
•Make the low-side gate drive as short as possible (1 inch or less preferred).
•Make the DRVL width to length ratio of 1:10, wider (1:5) if possible.
•If changing layers is necessary, use at least two vias.
SLUSAQ2 –JANUARY 2012
Figure 73. Major Current Loops to Minimize
Power Chain Symmetry
The TPS51640A, TPS59640, and TPS59641 do not require special care in the layout of the power chain
components. This is because independent isolated current feedback is provided. If it is possible to lay out the
phases in a symmetrical manner, then please do so. The rule is: the current feedback from each phase needs to
be clean of noise and have the same effective current sense resistance.
Place analog components as close to the device as possible.
Place components close to the device in the following order.
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
Status
(1)
Package Type Package
Drawing
PinsPackage Qty
Eco Plan
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
(2)
Lead/
Ball Finish
CU NIPDAUAGLevel-2-260C-1 YEAR
CU NIPDAUAGLevel-2-260C-1 YEAR
CU NIPDAUAGLevel-2-260C-1 YEAR
CU NIPDAUAGLevel-2-260C-1 YEAR
CU NIPDAUAGLevel-2-260C-1 YEAR
CU NIPDAUAGLevel-2-260C-1 YEAR
MSL Peak Temp
(3)
Samples
(Requires Login)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
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TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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