•Adaptive On Time Control Architecture with
Fixed 340kHz Operation
•Dynamic Output Voltage Change Capability
•4700 ppm/°C R
•Internal 0.9-ms Voltage Servo Softstart
•Pre-Charged Start-up Capability
•Built-in Output Discharge
•Power Good Output
•Integrated Boost Switch
•Built-in OVP/UVP/OCP
•Thermal Shutdown (Non-latch)
•SON-10 (DSC) Package
Current Sensing
DS(on)
TPS51217
SLUS947B –JUNE 2009–REVISED APRIL 2012
DESCRIPTION
The TPS51217 is a small-sized single buck controller
with adaptive on-time D-CAP™ mode. The device is
suitable for low output voltage, high current, PC
system power rail and similar point-of-load (POL)
power supply in digital consumer products. A small
package with minimal pin-count saves space on the
PCB, while a dedicated EN pin and pre-set frequency
minimize design effort required for new designs. The
skip-mode at light load condition, strong gate drivers
and low-side FET R
low-loss and high efficiency, over a broad load range.
TheTRAN pin providesfreedom ofmasking
overvoltage protection, undervoltage protection and
power-good signal during the transition period of
dynamic output voltage change for modern GPU
power supply applications. The conversion input
voltage which is the high-side FET drain voltage
ranges from 3 V to 28 V and the output voltage
ranges from 0.6 V to 2.6 V. The device requires an
external 5-V supply. The TPS51217 is available in a
10-pin SON package specified from –40°C to 85°C.
current sensing supports
DS(on)
APPLICATIONS
•Notebook Computers
•I/O Supplies
•System Power Supplies
TYPICAL APPLICATION CIRCUIT
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2D-CAP is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
T
A
–40°C to 85°CPlastic SON PowerPAD
PACKAGEORDERING DEVICE NUMBERPINSOUTPUT SUPPLY
www.ti.com
ORDERING INFORMATION
MINIMUM
QUANTITY
TPS51217DSCR10Tape and reel3000
TPS51217DSCT10Mini reel250
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
VALUE
MINMAXUNIT
VBST–0.337
(3)
Input voltage range
Output voltage range
Junction temperature range, T
Storage temperature range, T
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
(3) Voltage values are with respect to the SW terminal.
DISSIPATION RATINGS
2-oz. trace and copper pad with solder.
PACKAGE
10 pin DSC
(1)
(1) Enhanced thermal conductance by thermal vias is used beneath thermal pad as shown in Land Pattern information.
DRVL6O
EN3ISMPS enable pin. Short to GND to disable the device.
GNDIGround
PGOOD1Ovoltage. Continuous current capability is 1 mA. PGOOD goes high 1 ms after VFB becomes within
SW8I
TRAN5I
TRIP2I
Thermal
Pad
I/ODESCRIPTION
High-side MOSFET driver output. The SW node referenced floating driver. The gate drive voltage is
defined by the voltage across VBST to SW node bootstrap flying capacitor
Synchronous MOSFET driver output. The GND referenced driver. The gate drive voltage is defined by
V5IN voltage.
Power Good window comparator open drain output. Pull up with resistor to 5 V or appropriate signal
specified limits. Power bad, or the terminal goes low, after a 2- μs delay.
Switch node. A high-side MOSFET gate drive return. Also used for on time generation and output
discharge.
Dynamic voltage change control. It forces CCM and masks PGOOD, OVP and UVP when this pin's status
is pulled up or pulled down. The masking is terminated 900 μs after TRAN pin voltage returns to normal.
See the DYNAMIC VOLTAGE STEP and PGOOD/OVP/UVP MASK section for a detailed description.
Leave this pin open when dynamic voltage change is not used.
OCL detection threshold setting pin. 10 μA at room temperature, 4700 ppm/°C current is sourced and set
the OCL trip voltage as follows.
(0.2 V ≤ V
(TRIP)
≤ 3 V)
TPS51217
V5IN7I5 V +30% / –10% power supply input.
VBST10I
VFB4ISMPS feedback input. Connect the feedback resistor divider.
Supply input for high-side MOSFET driver (bootstrap terminal). Connect a flying capacitor from this pin to
the SW pin. Internally connected to V5IN via bootstrap MOSFET switch.