Texas Instruments TPS51125 Schematic [ru]

7
8
9
10
24
23
22
21
VO1
PGOOD
VBST1
DRVH1
VO2
VREG3
DRVH2
TPS51125RGE
11
12
20
19
LL1
DRVL1
LL2
DRVL2
13 14 15 16 17 18
EN0
SKIPSEL
GND
VIN
VREG5
VCLK
6 5 4 3 2 1
ENTRIP2
VFB2
TONSEL
VREF
VFB1
ENTRIP1
PowerPAD
220 nF
20 kW 20 kW 30 kW
100 kW
VREG5
33 Fm
5.1W
0.1 Fm
130 kW130 kW
3.3 Hm
330 Fm
VO1
5 V
VIN
VREG5
VIN
10 F x 2m
VIN
5.5 V to
28 V
EN0
5.1W
0.1 Fm
3.3 Hm
330 Fm
VO2
3.3 V
10 F x 2m
10 Fm
13 kW
UDG-09019
VIN
100 nF 1 Fm
15 V
100 nF
100 nF
100 nF
620 kW
VO1VREF
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TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
TPS51125 Dual-Synchronous, Step-Down Controller With Out-of-Audio™ Operation and
100-mA LDOS for Notebook System Power

1 Features 3 Description

1
Wide Input Voltage Range: 5.5 V to 28 V
Output Voltage Range: 2 V to 5.5 V
Built-In 100-mA, 5-V and 3.3-V LDO With Switches
Built-In 1% 2-V Reference Output
With or Without Out-of-Audio™ Mode Selectable Light-Load and PWM-Only Operation
Internal 1.6-ms Voltage Servo Soft-Start
Adaptive On-Time Control Architecture With Four Selectable Frequency Setting
4500 ppm/°C R
Current Sensing
DS(on)
Built-In Output Discharge
Powergood Output
Built-In OVP/UVP/OCP
Thermal Shutdown (Nonlatch)
QFN, 24-Pin (RGE)

2 Applications

Notebook Computers
I/O Supplies
System Power Supplies
The TPS51125 is a cost-effective, dual-synchronous buck controller targeted for notebook system power supply solutions. The device provides 5-V and 3.3-V LDOs and requires few external components. The 270-kHz VCLK output can be used to drive an external charge pump, thus generating gate drive voltage for the load switches without reducing the efficiency of the main converter. The TPS51125 supports high-efficiency, fast-transient response and provides a combined power-good signal. Out-of­Audio mode light-load operation enables low acoustic noise at much higher efficiency than conventional forced PWM operation. Adaptive on-time D-CAP™ control provides convenient and efficient operation. The part operates with supply input voltages ranging from 5.5 V to 28 V and supports output voltages from 2 V to 5.5 V. The TPS51125 is available in a 24-pin QFN package and is specified from -40°C to 85°C ambient temperature range.
Device Information
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS51125 VQFN (24) 4.00 mm x 4.00 mm (1) For all available packages, see the orderable addendum at
the end of the datasheet.
(1)
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
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Table of Contents

1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ..................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 6
6.5 Electrical Characteristics........................................... 7
6.6 Typical Characteristics............................................ 10
7 Detailed Description ............................................ 15
7.1 Overview ................................................................. 15
7.2 Functional Block Diagram ....................................... 15
7.3 Feature Description................................................. 17
7.4 Device Functional Modes........................................ 22
8 Application and Implementation ........................ 23
8.1 Application Information............................................ 23
8.2 Typical Application ................................................. 23
9 Power Supply Recommendations...................... 27
10 Layout................................................................... 27
10.1 Layout Guidelines ................................................. 27
10.2 Layout Example .................................................... 28
11 Device and Documentation Support ................. 30
11.1 Device Support...................................................... 30
11.2 Trademarks ........................................................... 30
11.3 Electrostatic Discharge Caution............................ 30
11.4 Glossary ................................................................ 30
12 Mechanical, Packaging, and Orderable
Information........................................................... 30

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (June 2012) to Revision H Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision F (March 2012) to Revision G Page
Added electrostatic discharge ratings in Absolute Maximum Ratings table. ......................................................................... 5
Changes from Revision E (May 2011) to Revision F Page
Added Input voltage range parameter, LL1, LL2, pulse width < 20 ns with a value of -5 V to 30 V...................................... 5
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TPS51125RGE
VO1
PGOOD
VO2
VREG3
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
EN0
ENTRIP2
VFB2
VREF
TONSEL
VFB1
ENTRIP1
SKIPSEL
GND
VIN
VCLK
VREG5
2
3
4
5
6
7 8
9 10
11
1
12
13
14
15
16
17
18
24 23
22 21
20 19
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5 Pin Configuration and Functions

TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
RGE PACKAGE
24 PINS
TOP VIEW
Pin Functions
PIN
NAME NO.
DRVH1 21 High-side N-channel MOSFET driver outputs. LL referenced drivers. DRVH2 10 DRVL1 19 Low-side N-channel MOSFET driver outputs. GND referenced drivers. DRVL2 12 ENTRIP1 1 Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to set ENTRIP2 6
EN0 13 I/O
GND 15 Ground. LL1 20 Switch node connections for high-side drivers, current limit and control circuitry. LL2 11 PGOOD 23 O Power Good window comparator output for channel 1 and 2. (Logical AND)
SKIPSEL 14 I
TONSEL 4 I
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I/O DESCRIPTION
O
O
I/O
threshold for synchronous R
sense. Short to ground to shutdown a switcher channel.
DS(on)
Master enable input. Open : LDOs on, and ready to turn on VCLK and switcher channels. 620 kto GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON. GND : disable all circuit
I
Selection pin for operation mode: OOA auto skip : Connect to VREG3 or VREG5 Auto skip : Connect to VREF Auto skip : Connect to VREF
On-time adjustment pin 365 kHz/460 kHz setting : connect to VREG5 300 kHz/375 kHz setting : connect to VREG3 245 kHz/305 kHz setting : connect to VREF 200 kHz/250 kHz setting : connect to GND
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TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
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Pin Functions (continued)
PIN
NAME NO.
VBST1 22 Supply input for high-side N-channel MOSFET driver (boost terminal). VBST2 9 VCLK 18 O 270-kHz clock output for 15-V charge pump. VFB1 2 SMPS feedback inputs. Connect with feedback resistor divider. VFB2 5 VIN 16 I High voltage power supply input for 5-V/3.3-V LDO. VO1 24 Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge inputs. VO2 7 VREF 3 O 2-V reference voltage output. Connect 220-nF to 1-μF ceramic capacitor to Signal GND near the device.
VREG3 8 O VREG5 17 O 5-V power supply output. Connect 33-μF ceramic capacitor to Power GND near the device.
I/O DESCRIPTION
I
I
I/O
VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
3.3-V power supply output. Connect 10-μF ceramic capacitor to Power GND near the device. A 1-μF ceramic capacitor is acceptable when not loaded.
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6 Specifications

TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

6.1 Absolute Maximum Ratings

(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VBST1, VBST2 –0.3 36 VIN –0.3 30 LL1, LL2 –2.0 30 LL1, LL2, pulse width < 20 ns –5.0 30 VBST1, VBST2 EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2, TONSEL,
SKIPSEL
(2)
–0.3 6 –0.3 6
V
Input voltage
(1)
DRVH1, DRVH2 –1.0 36
Output voltage
(1)
DRVH1, DRVH2
(2)
–0.3 6
PGOOD, VCLK, VREG3, VREG5, VREF, DRVL1, DRVL2 –0.3 6 Junction temperature, T Storage temperature, T
J
stg
–40 125 °C –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.

6.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
Electrostatic discharge V
(ESD)
Charged-device model (CDM), per JEDEC specification JESD22- ±1500
(2)
C101
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1)
±2000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage VIN 5.5 28
VBST1, VBST2 –0.1 34
Input voltage VBST1, VBST2 (with respect to LLx) –0.1 5.5
EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2, TONSEL, SKIPSEL –0.1 5.5 DRVH1, DRVH2 –0.8 34 V DRVH1, DRVH2 (with respect to LLx) –0.1 5.5
Output voltage LL1, LL2 –1.8 28
VREF, VREG3, VREG5 –0.1 5.5 PGOOD, VCLK, DRVL1, DRVL2 –0.1 5.5
Operating free-air temperature –40 85 °C
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
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6.4 Thermal Information

TPS51125
THERMAL METRIC
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
Junction-to-ambient thermal resistance 34.2 Junction-to-case (top) thermal resistance 37.2 Junction-to-board thermal resistance 12.4 Junction-to-top characterization parameter 0.4 Junction-to-board characterization parameter 12.4 Junction-to-case (bottom) thermal resistance 2.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(1)
VQFN UNIT
24 PINS
°C/W
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6.5 Electrical Characteristics

over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
I
VIN1
I
VIN2
I
VO1
I
VO2
I
VINSTBY
I
VINSDN
VIN supply current1 VO2 = 0 V, EN0=open, ENTRIPx = 5 V, 0.55 1 mA
VIN supply current2 VO2 = 3.3 V, EN0=open, ENTRIPx = 5 V, 4 6.5 μA
VO1 current VO2 = 3.3 V, EN0=open, ENTRIPx = 5 V, 0.8 1.5 mA
VO2 current VO2 = 3.3 V, EN0=open, ENTRIPx = 5 V, 12 100
VIN standby current 95 250
VIN shutdown current 10 25
VREF OUTPUT
V
VREF
VREF output voltage V
VREG5 OUTPUT
V
VREG5
I
VREG5
V
TH5VSW
R
5VSW
VREG5 output voltage 28 V V
VREG5 output current VO1 = 0 V, VREG5 = 4.5 V 100 175 250 mA
Switch over threshold V
5 V SW R
ON
VREG3 OUTPUT
V
VREG3
I
VREG3
V
TH3VSW
R
3VSW
VREG3 output voltage 28 V V
VREG3 output current VO2 = 0 V, VREG3 = 3 V 100 175 250 mA
Switch over threshold V
3 V SW R
ON
INTERNAL REFERENCE VOLTAGE
V
V
I
VFB
IREF
VFB
Internal reference voltage I
VFB regulation voltage
VFB input current VFBx = 2.0 V, TA= 25°C –20 20 nA
(1) Ensured by design. Not production tested.
VIN current, TA= 25°C, no load, VO1 = 0 V, VFB1 = VFB2 = 2.05 V
VIN current, TA= 25°C, no load, VO1 = 5 V, VFB1 = VFB2 = 2.05 V
VO1 current, TA= 25°C, no load, VO1 = 5 V, VFB1 = VFB2 = 2.05 V
VO2 current, TA= 25°C, no load, VO1 = 5 V, VFB1 = VFB2 = 2.05 V
VIN current, TA= 25°C, no load, μA EN0 = 1.2 V, ENTRIPx = 0 V
VIN current, TA= 25°C, no load, EN0 = ENTRIPx = 0 V
I
= 0 A 1.98 2.00 2.02
VREF
-5 μA < I
VO1 = 0 V, I VO1 = 0 V, I
VO1 = 0 V, I V
< 100 μA 1.97 2.00 2.03
VREF
< 100 mA, TA= 25°C 4.8 5 5.2
VREG5
< 100 mA, 6.5 V < VIN <
VREG5
< 50 mA, 5.5 V < VIN < 28
VREG5
Turns on 4.55 4.7 4.85 Hysteresis 0.15 0.25 0.3 VO1 = 5 V, I
VO2 = 0 V, I VO2 = 0 V, I
VO2 = 0 V, I V
= 100 mA 1 3
VREG5
< 100 mA, TA= 25°C 3.2 3.33 3.46
VREG3
< 100 mA, 6.5 V < VIN <
VREG3
< 50 mA, 5.5 V < VIN < 28
VREG3
Turns on 3.05 3.15 3.25 Hysteresis 0.1 0.2 0.25 VO2 = 3.3 V, I
= 0 A, beginning of ON state 1.95 1.98 2.01
VREF
FB voltage, I FB voltage, I FB voltage, I
conduction
(1)
= 100 mA 1.5 4
VREG3
= 0 A, skip mode 1.98 2.01 2.04
VREF
= 0 A, OOA mode
VREF
= 0 A, continuous
VREF
(1)
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
4.75 5 5.25
4. 75 5 5.25
3.13 3.33 3.5
3.13 3.33 3.5
2.00 2.035 2.07
2.00
V
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Electrical Characteristics (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
DISCHARGE
OUT
I
Dischg
OUTPUT DRIVERS
R
DRVH
R
DRVL
t
D
CLOCK OUTPUT
V
CLKH
V
CLKL
f
CLK
INTERNAL BST DIODE
V
FBST
I
VBSTLK
DUTY AND FREQUENCY CONTROL
t
ON11
t
ON12
t
ON13
t
ON14
t
ON21
t
ON22
t
ON23
t
ON24
t
ON(min)
t
OFF(min)
SOFT-START
t
SS
POWERGOOD
V
THPG
I
PGMAX
t
PGDEL
VOUT discharge current ENTRIPx = 0 V, VOx = 0.5 V 10 60 mA
DRVH resistance
DRVL resistance
Dead time ns
High level voltage I Low level voltage I
Source, V Sink, V Source, V Sink, V DRVHx-off to DRVLx-on 10 DRVLx-off to DRVHx-on 30
VCLK VCLK
BSTx - DRVHx
DRVHx - LLx
VREG5 - DRVLx
= 100 mV 1.5 4
DRVLx
= -10 mA, VO1 = 5 V, TA= 25 °C 4.84 4.92 = 10 mA, VO1 = 5 V, TA= 25 °C 0.06 0.12
= 100 mV 4 8
= 100 mV 1.5 4
= 100 mV 4 8
Clock frequency TA= 25 °C 175 270 325 kHz
Forward voltage V
VREG5-VBSTx
, IF= 10 mA, TA= 25 °C 0.7 0.8 0.9 V
VBST leakage current VBSTx = 34 V, LLx = 28 V, TA= 25 °C 0.1 1 μA
CH1 on time 1 VIN= 12 V, VO1 = 5 V, 200 kHz setting 2080 CH1 on time 2 VIN= 12 V, VO1 = 5 V, 245 kHz setting 1700 CH1 on time 3 VIN= 12 V, VO1 = 5 V, 300 kHz setting 1390 CH1 on time 4 VIN= 12 V, VO1 = 5 V, 365 kHz setting 1140 CH2 on time 1 VIN= 12 V, VO2 = 3.3 V, 250 kHz setting 1100 CH2 on time 2 VIN= 12 V, VO2 = 3.3 V, 305 kHz setting 900 CH2 on time 3 VIN= 12 V, VO2 = 3.3 V, 375 kHz setting 730 CH2 on time 4 VIN= 12 V, VO2 = 3.3 V, 460 kHz setting 600 Minimum on time TA= 25 °C 80 Minimum off time TA= 25 °C 300
Internal SS time Internal soft start 1.1 1.6 2.1 ms
PG in from lower 92.50% 95% 97.50%
PG threshold PG in from higher 102.50% 105% 107.50%
PG hysteresis 2.50% 5% 7.50% PG sink current PGOOD = 0.5 V 5 12 mA PG delay Delay for PG in 350 510 670 μs
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V
ns
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Electrical Characteristics (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOGIC THRESHOLD AND SETTING CONDITIONS
Shutdown 0.4
V
EN0
I
EN0
V
EN
V
TONSEL
V
SKIPSEL
PROTECTION: CURRENT SENSE
I
ENTRIP
TC
IENTRIP
V
OCLoff
V
OCL(max)
V
ZC
V
ENTRIP
PROTECTION: UNDERVOLTAGE AND OVERVOLTAGE
V
OVP
t
OVPDEL
V
UVP
t
UVPDEL
t
UVPEN
UVLO
V
UVVREG5
V
UVVREG3
THERMAL SHUTDOWN
T
SDN
EN0 setting voltage Enable, VCLK = off 0.8 1.6 V
Enable, VCLK = on 2.4
V
= 0.2 V 2 3.5 5
EN0 current μA
ENTRIP1, ENTRIP2 threshold
EN0
V
= 1.5 V 1 1.75 2.5
EN0
Shutdown 350 400 450
Hysteresis 10 30 60
200 kHz/250 kHz 1.5
TONSEL setting voltage
245 kHz/305 kHz 1.9 2.1
300 kHz/375 kHz 2.7 3.6
365 kHz/460 kHz 4.7 V
PWM only 1.5 SKIPSEL setting voltage Auto skip 1.9 2.1
OOA auto skip 2.7
ENTRIPx source current V ENTRIPx current
temperature coefficient OCP comparator offset –8 0 8
On the basis of 25°C
((V
V Maximum OCL setting V Zero cross detection
comparator offset
V Current limit threshold V
= 920 mV, TA= 25°C 9.4 10 10.6 μA
ENTRIPx
(1)
ENTRIPx-GND
ENTRIPx-GND ENTRIPx
GND-LLx
ENTRIPx-GND
/9)-24 mV -V
= 920 mV
= 5 V 185 205 225 mV voltage –5 0 5
voltage,
(1)
GND-LLx
) voltage,
OVP trip threshold OVP detect 110% 115% 120% OVP prop delay 2 μs
Output UVP trip threshold
UVP detect 55% 60% 65%
Hysteresis 10% Output UVP prop delay 20 32 40 μs Output UVP enable delay 1.4 2 2.6 ms
VREG5 UVLO threshold
VREG3 UVLO threshold Shutdown
Thermal shutdown threshold °C
Wake up 4.1 4.2 4.3
Hysteresis 0.38 0.43 0.48 V
(1)
Shutdown temperature
Hysteresis
(1)
(1)
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
mV
4500 ppm/°C
0.515 2 V
VO2-1
150
10
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0
50
100
150
200
250
5 10 15 20 25
VIN- Input Voltage - V
I – VIN Standby Current – nA
VINSTBY
0
50
100
150
200
250
-
50
0 50 100 150
TJ- Junction Temperature - °C
I
VINST BY
- VIN Standby Cu rrent -
mA
0
1
2
3
4
5
6
7
8
9
-50 0 50 100 150
TJ- Junction Temperature - °C
I
VIN2
- VIN Supply C urrent2 -
mA
0
1
2
3
4
5
6
7
8
9
5 10 15 20 25
VIN- Input Voltage - V
I
VIN2
- VIN Supply Current2 -
mA
0
100
200
300
400
500
600
700
800
5 10 15 20 25
VIN- Input Voltage - V
I
VIN1
- VIN Supply Current1 -
mA
0
100
200
300
400
500
600
700
800
-50 0 50 100 150
TJ- Junction Temperature - °C
I
VIN1
- VIN Supply Current1 -
mA
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

6.6 Typical Characteristics

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Figure 1. VIN Supply Current1 vs Junction Temperature
Figure 3. VIN Supply Current2 vs Junction Temperature
Figure 2. VIN Supply Current1 vs Input Voltage
Figure 4. VIN Supply Current1 vs Input Voltage
Figure 5. VIN Standby Current vs Junction Temperature
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Figure 6. VIN Standby Current vs Input Voltage
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0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
f
SW
- Swithching F requency - kHz
TONSEL = GND
CH1
CH2
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
f
SW
- Swithchin g Frequency - kHz
TONSEL = 2V
CH1
CH2
6
7
8
9
10
11
12
13
14
-50 0 50 100 150
TJ- Junction Temperature - °C
I
ENTR IP
- Current Sense Cu rrent -
mA
175
200
225
250
275
300
325
-50 0 50 100 150
TJ- Junction Temperature - °C
f
CLK
- VCLK Frequ ency - kHz
0
5
10
15
20
25
-50 0 50 100 1 50
TJ- Junction Temperature - °C
I
VINSD N
- VIN Shutdo wn C urrent -Am
0
5
10
15
20
25
5 10 15 20 25
VIN- Input Voltage - V
I
VINSDN
- VIN Shutdown Current -
mA
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Typical Characteristics (continued)
Figure 7. VIN Shutdown Current vs Junction Temperature Figure 8. VIN Shutdown Current vs Input Voltage
TPS51125
Figure 9. Current Sense Current vs Junction Temperature
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Figure 11. Switching Frequency vs Input Voltage Figure 12. Switching Frequency vs Input Voltage
Figure 10. VCLK Frequency vs Junction Temperature
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0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
- Output Current - A
f
SW
- Swithch ing Frequency - kHz
TONSEL = 5V
CH2 Auto-skip
CH2 OOA
CH2 PWM Only
CH1 PWM Only
CH1 Auto-skip
CH1 OOA
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
- Output Current - A
f
SW
- Swithch ing Frequency - kHz
TONSEL = 3.3V
CH2 Auto-skip
CH2 OOA
CH2 PWM Only
CH1 PWM Only
CH1 Auto-skip
CH1 OOA
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
- Output Current - A
f
SW
- Swithch ing Frequency - kHz
TONSEL = 2V
CH2 Auto-skip
CH2 OOA
CH2 PWM Only
CH1 PWM Only
CH1 Auto-skip
CH1 OOA
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I
OUT
- Output Current - A
f
SW
- Swithch ing Frequency - kHz
TONSEL = GND
CH2 Auto-skip
CH2 OOA
CH2 PWM Only
CH1 PWM Only
CH1 Auto-skip
CH1 OOA
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
f
SW
- Swithchin g Frequency - kHz
TONSEL = 5V
CH1
CH2
0
100
200
300
400
500
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
f
SW
- Swithchin g Frequency - kHz
TONSEL = 3.3V
CH1
CH2
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Typical Characteristics (continued)
www.ti.com
Figure 13. Switching Frequency vs Input Voltage
Figure 15. Switching Frequency vs Output Current
Figure 14. Switching Frequency vs Input Voltage
Figure 16. Switching Frequency vs Output Current
12 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Figure 17. Switching Frequency vs Output Current
Figure 18. Switching Frequency vs Output Current
Product Folder Links: TPS51125
4.950
4.975
5.000
5.025
5.050
5.075
0.001 0.01 0.1 1 10
I
OUT1
- 5-V Output Current - A
V
OUT1
- 5-V Outp ut Voltage - V
PWM Only
Auto-skip
OOA
3.240
3.270
3.300
3.330
3.360
0.001 0.01 0.1 1 10
I
OUT2
- 3.3-V Output Current - A
V
OUT2
- 3.3-V Outp ut Voltage - V
PWM Only
Auto-skip
OOA
3.2
3.25
3.3
3.35
0 20 40 60 80 100
I
VREG3
- VREG3 Output Cur re nt - m A
V - VREG3 O utput Volt age - VVREG3
1.980
1.985
1.990
1.995
2.000
2.005
2.010
2.015
2.020
0 20 40 60 80 100
I
VREF
- VREF Output Current -Am
V
VREF
- VREF Output Voltage - V
4.90
4.95
5.00
5.05
0 20 40 60 80 100
I
VREG5
- VREG5 Output Cur re nt - m A
V
VREG5
- VREG5 Outpu t Voltage - V
40
50
60
70
80
90
100
110
120
130
140
150
-50 0 50 100 150
TJ- Junction Temperature - °C
V
OVP/VUVP
- OVP/UVP Threshold - %
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Typical Characteristics (continued)
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Figure 19. OVP/UVP Threshold Voltage vs Junction
Temperature
Figure 21. VREG5 Output Voltage vs Output Current
Figure 20. VREG5 Output Voltage vs Output Current
Figure 22. VREG5 Output Voltage vs Output Current
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Figure 23. 5-V Output Voltage vs Output Current Figure 24. 3.3-V Output Voltage vs Output Current
Product Folder Links: TPS51125
0
20
40
60
80
100
0.001 0.01 0.1 1 10
I
OUT1
- 5-V Output Current - A
h- Efficiency - %
Auto-skip
PWM Only
OOA
VIN=8V
VIN=12V
VIN=20V
0
20
40
60
80
100
0.001 0.01 0.1 1 10
I
OUT2
- 3.3-V Output Current - A
h- Efficiency - %
Auto-skip
PWM Only
OOA
5-V Switcher ON
VIN=8V
VIN=12V
VIN=20V
3.240
3.270
3.300
3.330
3.360
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
V
OUT2
- 3.3-V Outp ut Voltage - V
IO= 0A
IO= 6A
4.950
4.975
5.000
5.025
5.050
5.075
6 8 10 12 14 16 18 20 22 24 26
VIN- Input Voltage - V
V
OUT1
- 5-V Outp ut Voltage - V
IO= 0A
IO= 6A
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Typical Characteristics (continued)
www.ti.com
Figure 25. 5-V Output Voltage vs Input Voltage
Figure 26. 3.3-V Output Voltage vs Input Voltage
Figure 27. 5-V Efficiency vs Output Current Figure 28. 3.3-V Efficiency vs Output Current
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Product Folder Links: TPS51125
TPS51125
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

7 Detailed Description

7.1 Overview

The TPS51125 is a cost-effective, dual-synchronous buck controller targeted for notebook system-power supply solutions. It provides 5 V and 3.3 V LDOs and requires few external components. With D-CAP™ control mode implemented, compensation network can be removed. Besides, the fast transient response also reduced the output capacitance.

7.2 Functional Block Diagram

Figure 29. TPS51125 Functional Block Diagram
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Functional Block Diagram (continued)
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Figure 30. Switcher Controller Block
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TPS51125
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

7.3 Feature Description

7.3.1 PWM Operations

The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width modulation (PWM) controller. It supports a proprietary D-CAP mode. D-CAP mode does not require external compensation circuit and is suitable for low external component count configuration when used with appropriate amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ON state. This MOSFET is turned off, or becomes OFF state, after internal one-shot timer expires. This one shot is determined by VINand V
to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time control. The
OUT
MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal 2-V reference. The inductor current information is also monitored and should be below the overcurrent threshold to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each OFF state to keep the conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is kept over broad range of load current.

7.3.2 Adaptive On-Time Control and PWM Frequency

TPS51125 does not have a dedicated oscillator onboard. However, the part runs with pseudo-constant frequency by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is controlled inverse proportional to the input voltage and proportional to the output voltage so that the duty ratio will be kept as VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal connection as
Table 1.
Table 1. Tonsel Connection and Switching Frequency
TONSEL CONNECTION
GND 200 kHz 250 kHz
VREF 245 kHz 305 kHz VREG3 300 kHz 375 kHz VREG5 365 kHz 460 kHz
SWITCHING FREQUENCY
CH1 CH2
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Product Folder Links: TPS51125
f
SW
0
O
1
f
2 ESR C 4
= £
p ´ ´
ESR
R1
Co
+
2V
+
Lx
R2
Control
logic
&
Driver
RL
VIN
VFB
DRVH
DRVL
PWM
Switching ModulatorVoltage Divider
IoIc
I
L
Vc
Output Capacitor
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
www.ti.com

7.3.3 Loop Compensation

From small-signal loop analysis, a buck converter using D-CAPTMmode can be simplified as shown in Figure 31.
Figure 31. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the 0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
As f0is determined solely by the characteristics of the output capacitor, loop stability of D-CAP mode is determined by the chemistry of the capacitor. For example, specialty polymer capacitors (SP-CAP) have Co in the order of several 100 μF and ESR in range of 10 m. These will make f0in the order of 100 kHz or less and the loop will be stable. However, ceramic capacitors have f0at more than 700 kHz, which is not suitable for this operational mode.

7.3.4 Ramp Signal

The TPS51125 adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described in the previous section, the feedback voltage is compared with the reference information to keep the output voltage in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new switching cycle is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled to start with –20 mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By using this scheme, the TPS51125 improve jitter performance without sacrificing the reference accuracy.

7.3.5 Light-Load Condition in Auto-Skip Operation

The TPS51125 automatically reduces switching frequency at light-load conditions to maintain high efficiency. This reduction of frequency is achieved smoothly and without increase of V described as follows. As the output current decreases from heavy load condition, the inductor current is also reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero inductor current is detected. As the load current further decreased, the converter runs in discontinuous
ripple. Detail operation is
OUT
(1)
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Product Folder Links: TPS51125
( )
f
IN OUT OUT
OUT(LL)
IN
1
I
2 L
V V V
V
´
´ ´
- ´
=
TPS51125
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next ON cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current increase from light load to heavy load, switching frequency increases to the preset value as the inductor current reaches to the continuous conduction. The transition load point to the light load operation I
OUT(LL)
(that is, the
threshold between continuous and discontinuous conduction mode) can be calculated as follows;
where
f is the PWM switching frequency (2)
Switching frequency versus output current in the light load condition is a function of L, VINand V decreases almost proportional to the output current from the I at I
/5 if the frequency setting is 300 kHz.
OUT(LL)
OUT(LL)
given above. For example, it will be 60 kHz
OUT
, but it

7.3.6 Out-of-Audio Light-Load Operation

Out-of-Audio (OOA) light-load mode is a unique control feature that keeps the switching frequency above acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion efficiency. When the Out-of-Audio operation is selected, OOA control circuit monitors the states of both MOSFET and force to change into the ON state if both of MOSFETs are off for more than 32 μs. This means that the top MOSFET is turned on even if the output voltage is higher than the target value so that the output capacitor is tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.

7.3.7 VREG5/VREG3 Linear Regulators

There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5 serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers. The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add a ceramic capacitor with a value of at least 33 μF and place it close to the VREG5 pin, and add at most 10 μF to the VREG3 pin. Total capacitance connected to the VREG3 pin should not exceed 10 μF.

7.3.8 VREG5 Switch Over

When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal 5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The 510-μs powergood delay helps a switch over without glitch.

7.3.9 VREG3 Switch Over

When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated, internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over MOSFET. The 510-μs powergood delay helps a switch over without glitch.

7.3.10 Powergood

The TPS51125 has one powergood output that indicates 'high' when both switcher outputs are within the targets (AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If the output voltage becomes within +/-5% of the target value, internal comparators detect power good state and the powergood signal becomes high after 510-μs internal delay. Therefore PGOOD goes high around 2.5 ms after ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal becomes low after 2-μs internal delay. The powergood output is an open-drain output and is needed to be pulled up outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio mode.
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Links: TPS51125
3.3V
13
TPS51125
EN0
13
TPS51125
EN0
Control
Input
Control
Input
15
GND
15
GND
(a) Control by MOSFET switch
(b) Control by Logic
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
www.ti.com

7.3.11 Output Discharge Control

When ENTRIPx is low, the TPS51125 discharges outputs using internal MOSFET which is connected to VOx and GND. The current capability of these MOSFETs is limited to discharge slowly.

7.3.12 Low-Side Driver

The low-side driver is designed to drive high current low R
N-channel MOSFETs. The drive capability is
DS(on)
represented by its internal resistance, which are 4 for VREG5 to DRVLx and 1.5 for DRVLx to GND. A dead time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the high­side gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125 package.

7.3.13 High-Side Driver

The high-side driver is designed to drive high current, low R
N-channel MOSFETs. When configured as a
DS(on)
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are 4 for VBSTx to DRVHx and 1.5for DRVHx to LLx.

7.3.14 VCLK for Charge Pump

270-kHz clock signal can be used for charge pump circuit to generate approximately 15-V dc voltage. The clock signal becomes available when EN0 becomes higher than 2.4 V or open state. Example of control circuit is shown in Figure 32. Note that the clock driver uses VO1 as its power supply. Regardless of enable or disable of VCLK, power consumption of the TPS51125 is almost the same. Therefore even if VCLK is not used, one can let EN0 pin open or supply logic ‘high’, as shown in Figure 32, and let VCLK pin open. This approach further reduces the external part count.
Figure 32. Control Example of EN0 Master Enable
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Product Folder Links: TPS51125
( ) ( )
( )
f
IN OUT OUT
TRIP RIPPLE TRIP
OCP
IN
DS on DS on
V V V
V I V
1
I
R 2 R 2 L V
- ´
= + = + ´
´ ´
( )
( ) ( )
( )
TRIP TRIP
TRIP
R k I A
V mV 24 mV
9
W ´ m
= -
18
1uF
100nF
100nF
100nF
PGND PGND PGND
- 15V/10mA
D0 D1
D2
D4
100nF
VO1(5V)
VCLK
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TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Figure 33. 15-V / 10-mA Charge Pump Configuration

7.3.15 Current Protection

TPS51125 has cycle-by-cycle over current limiting control. The inductor current is monitored during the OFF state and the controller keeps the OFF state during the inductor current is larger than the over current trip level. In order to provide both good accuracy and cost effective solution, TPS51125 supports temperature compensated MOSFET R setting resistor, R
. ENTRIPx terminal sources I
TRIP
the trip level is set to the OCL trip voltage V
sensing. ENTRIPx pin should be connected to GND through the trip voltage
DS(on)
TRIP
current, which is 10 μA typically at room temperature, and
TRIP
as below. Note that the V
is limited up to about 205 mV
TRIP
internally.
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage. The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to compensate the temperature dependency of the R
. GND is used as the positive current sensing node so
DS(on)
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom MOSFET.
As the comparison is done during the OFF state, V current at over current threshold, I
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
, can be calculated in Equation 4.
OCP
sets valley level of the inductor current. Thus, the load
TRIP
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and shutdown both channels.
(3)
(4)

7.3.16 Overvoltage and Undervoltage Protection

TPS51125 monitors a resistor divided feedback voltage to detect over and undervoltage. When the feedback voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
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TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
www.ti.com
Also, TPS51125 monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51125 turns off the top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes high and an internal UVP delay counter begins counting. After 32 μs, TPS51125 latches OFF both top and bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms following ENTRIPx has become high.

7.3.17 UVLO Protection

TPS51125 has VREG5 undervoltage lockout protection (UVLO). When the VREG5 voltage is lower than UVLO threshold voltage both switch mode power supplies are shut off. This is nonlatch protection. When the VREG3 voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.

7.3.18 Thermal Shutdown

TPS51125 monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C), TPS51125 is shut off including LDOs. This is nonlatch protection.

7.4 Device Functional Modes

7.4.1 Enable and Soft-Start

EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those three regulators and minimize the shutdown supply current to 10 μA. Pulling this node up to 3.3 V or 5 V will turn the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become ready to enable at this standby mode. The TPS51125 has an internal, 1.6 ms, voltage servo softstart for each channel. When the ENTRIPx pin becomes higher than the enable threshold voltage, which is typically 430 mV, an internal DAC begins ramping up the reference voltage to the PWM comparator. Smooth control of the output voltage is maintained during start up. As TPS51125 shares one DAC with both channels, if ENTRIPx pin becomes higher than the enable threshold voltage while another channel is starting up, soft start is postponed until another channel soft start has completed. If both of ENTRIP1 and ENTRIP2 become higher than the enable threshold voltage at a same time (within 60 μs), both channels start up at same time.
Table 2. Enabling State
EN0 ENTRIP1 ENTRIP2 VREF VREG5 VREG3 CH1 CH2 VCLK
GND Don’t Care Don’t Care Off Off Off Off Off Off R to GND Off Off On On On Off Off Off R to GND On Off On On On On Off Off R to GND Off On On On On Off On Off R to GND On On On On On On On Off
Open Off Off On On On Off Off Off Open On Off On On On On Off On Open Off On On On On Off On Off Open On On On On On On On On
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Product Folder Links: TPS51125
9
10
11
12
VO1
PGOOD
VO2
VREG3
TPS51125RGE
(QFN24)
13 14 15 16
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
17
EN0
8
ENTRIP2
7
6
VFB2
5
VREF
4
TONSEL
3
VFB1
2 1
ENTRIP1
18
SKIPSEL
19
20
GND
21
VIN
22
23
24
VCLK
VO1 5V/8A
L2
3.3mH
Q3
IRF7821
VO1_GND
PGND
C9
10mF
C7
0.1mF
VIN
VO2
3.3V/8A
L1
3.3mH
Q1
IRF7821
VO2_GND
C4
0.1mF
VIN
PowerPAD
C11
33mF
VREG5
C10
POSCAP
330mF
PGND
R9
5.1W
VIN
5.5~28V
R7
5.1W
C2
10mF
C1
10mF
PGND
C5
POSCAP
330mF
5V/100mA
PGND
R4
30kW
R2
20kW
R1
13kW
SGND
VREG5
VREG5
R8
100kW
PGND
R3
20kW
C6
0.22mF
PGND
SGND
R6
130kW
SGND
R5
130kW
C16 1uF
C13 100nF
C14 100nF
C15 100nF
PGND
15V/10mA
D1
D2
D3
D4
C12 100nF
C3
10mF
PGND
3.3V/100mA
C8
10mF
VREF
VO1
EN0
PGNDPGND
SGND
VREF
R10
620kW
S1
SGND
Q2
FDS6690AS
Q4
FDS6690AS
TPS51125
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SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPS51125 is typically used as a dual-synchronous buck controller, which convert an input voltage ranging from 5.5 V to 28 V, to output voltage 5 V and 3.3 V respectively, targeted for notebook system-power supply solutions.

8.2 Typical Application

Figure 34. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)

8.2.1 Design Requirements

Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 23
PARAMETER VALUE
Input voltage range 5.5 V to 28 V Channel 1 output voltage 5 V Channel 1 output current 8 A Channel 2 output voltage 3.3 V Channel 2 output current 8 A
Table 3. Design Parameters
Product Folder Links: TPS51125
( ) ( )
( )
( )
( )
f
OUT
RIPPLE
V 20 mV 1 D 20 mV L
ESR
2 V I 2 V
´ ´ - ´ ´
= =
´
( )
( )
( )
(
)
( )
f
OUT O UT
IN m ax
TRIP
IND peak
DS on IN m ax
V
1
R L
V V V
I
V´
- ´
= + ´
( )
( )
(
)
( )
( )
( )
(
)
( )
f f
OUT OUT OUT OUT
IN max IN max
IND ripple IN max OUT max IN max
1 3
I I
V V V V V V
L
V V
´
´ ´
- ´ - ´
= = ´
( )
OUT
V 2.0
R1 R2
2.0
-
= ´
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

8.2.2 Detailed Design Procedure

Table 4. List of Materials for 5-V / 8-A, 3.3-V / 8-A Application Circuit
SYMBOL SPECIFICATION MANUFACTURER PART NUMBER
C1, C2, C8, C9 10 μ F, 25 V Taiyo Yuden TMK325BJ106MM C3 10 μF, 6.3 V TDK C2012X5R0J106K C11 33 μF, 6.3 V TDK C3216X5RBJ336M C5, C10 330 μF, 6.3 V, 25 m Sanyo 6TPE330ML
L1, L2 TOKO FDA1055-3R3M Q1, Q3 30 V, 9.5 m IR IRF7821
(1)
Q2, Q4
(1) Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
with normal MOSFET.
8.2.2.1 Determine Output Voltage
The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 31. R1 is connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND. Recommended R2 value is from 10 kto 20 k. Determine R1 using equation as below.
3.3 μH, 15.6 A, 5.92 m
30 V, 12 m Fairchild FDS6690AS
www.ti.com
(5)
8.2.2.2 Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable operation.
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak inductor current before saturation. The peak inductor current can be estimated as follows.
(7)
8.2.2.3 Choose the Output Capacitors
Organic semiconductor capacitors or specialty polymer capacitors are recommended. Determine ESR to meet required ripple voltage. A quick approximation is as shown in Equation 8.
where
D is the duty cycle
the required output ripple slope is approximately 20 mV per tSW(switching period) in terms of VFB terminal voltage (8)
8.2.2.4 Choose the Low-Side MOSFET
It is highly recommended that the low-side MOSFET should have an integrated Schottky barrier diode, or an external Schottky barrier diode in parallel to achieve stable operation.
24 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: TPS51125
V
OUT1
(200mV/div)
VREG5 (200mV/div)
V
OUT2
(200mV/div)
VREG3 (200mV/div)
ENTRIP1 (2V/div)
V
OUT1
(2V/div)
PGOOD (5V/div)
ENTRIP2 (2V/div)
V
OUT2
(2V/div)
PGOOD (5V/div)
V
OUT1
(100mV/div)
I
IND
(5A/div)
I
OUT1
(5A/div)
V
OUT2
(100mV/div)
I
IND
(5A/div)
I
OUT2
(5A/div)
www.ti.com

8.2.3 Application Curves

Figure 35. 5-V Load Transient Response Figure 36. 3.3-V Load Transient Response
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 25
Figure 37. 5-V Start-up Waveforms Figure 38. 3.3-V Start-up Waveforms
Figure 39. 5-V Switchover Waveforms Figure 40. 3.3-V Switchover Waveforms
Product Folder Links: TPS51125
ENTRIP1 (5V/div)
V
OUT1
(2V/div)
PGOOD (5V/div)
DRVL1 (5V/div)
ENTRIP2 (5V/div)
V
OUT2
(2V/div)
PGOOD (5V/div)
DRVL2 (5V/div)
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
Figure 41. 5-V Soft-Stop Waveforms Figure 42. 3.3-V Soft-Stop Waveforms
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26 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: TPS51125
TPS51125
www.ti.com
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

9 Power Supply Recommendations

The TPS51125 is designed to operate from input supply voltage in the range of 5.5 V to 28 V, make sure power supply voltage in this range.

10 Layout

10.1 Layout Guidelines

Consider these points before starting layout work using the TPS51125.
TPS51125 has only one GND pin and special care of GND trace design makes operation stable, especially when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting resistor, EN0 pull-down resistor and EN0 bypass capacitor as shown in the thin GND line of Figure 43. This trace is named Signal Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and source of low-side MOSFETs as close as possible, and connect them to another inner GND plane with GND pin of the device, GND terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in the bold GND line of Figure 43. This trace is named Power Ground (PGND). SGND should be connected to PGND at the middle point between ground terminal of VOUT capacitors.
Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be placed on one side of the PCB (solder side). Power components of each channel should be at the same distance from the TPS51125. Other small signal parts should be placed on another side (component side). Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET and high-voltage side of the inductor, should be as short and wide as possible.
VREG5 requires capacitance of at least 33 μF and VREG3 requires capacitance of at most 10 μF. VREF requires a 220-nF ceramic bypass capacitor which should be placed close to the device and traces should be no longer than 10 mm.
Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the device if possible.
The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3 is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the device. Place on the component side and avoid vias between this resistor and the device.
Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5 mm (20 mils) diameter along this trace.
All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD, TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx, DRVHx and VCLK nodes to avoid coupling.
Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel interference.
In order to effectively remove heat from the package, prepare thermal land and solder to the package’s thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land to the internal ground plane should be used to help dissipation. This thermal land underneath the package should be connected to SGND, and should NOT be connected to PGND.
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 27
Product Folder Links: TPS51125
TPS51125
DRVL1DRVL2
PowerPAD
VFB1VFB2 VREF
GND
VREG5
VREG3
220 nF
SGND
SGND
UDG-09020
5 3 2
12 19
15
33 mF
817
10 mF
V
IN
V
IN
V
OUT1
V
OUT2
PGND PGND
Charge
Pump
VCLK
15 V OUT
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015

10.2 Layout Example

www.ti.com
Figure 43. Ground System
28 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: TPS51125
Driver and switch node traces are shown for CH1 only.
*
Cin
Cin
L
L
Vout1
HS-MOSFET
LS-MOSFET
HS-MOSFET
Vout2
Cout
To CH1 Vout divider
To CH2 Vout divider
To VO2
To VO1
LS-MOSFET
Bottom Layer
VIN
GND
Connection to GND island
Connection to GND
Connection of Vout
Top Layer
TPS51125
C
VREF
CH1 Vout divider
C
VREG5
DRVH1*
LL1*
DRVL1*
Through hole
CH2 Vout divider
Connection to GND island
GND
Inner Layer
C
VREG3
Cout
GND island
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Layout Example (continued)
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
TPS51125
Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 29
Figure 44. PCB Layout
Product Folder Links: TPS51125
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
www.ti.com

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Trademarks

D-CAP is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary

SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
30 Submit Documentation Feedback Copyright © 2007–2015, Texas Instruments Incorporated
Product Folder Links: TPS51125
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Oct-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type
TPS51125RGER VQFN RGE 24 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 TPS51125RGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 TPS51125RGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Oct-2014
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS51125RGER VQFN RGE 24 3000 367.0 367.0 35.0
TPS51125RGET VQFN RGE 24 250 210.0 185.0 35.0 TPS51125RGET VQFN RGE 24 250 210.0 185.0 35.0
Pack Materials-Page 2
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