TPS51125 Dual-Synchronous, Step-Down Controller With Out-of-Audio™ Operation and
100-mA LDOS for Notebook System Power
1Features3Description
1
•Wide Input Voltage Range: 5.5 V to 28 V
•Output Voltage Range: 2 V to 5.5 V
•Built-In 100-mA, 5-V and 3.3-V LDO With
Switches
•Built-In 1% 2-V Reference Output
•With or Without Out-of-Audio™ Mode Selectable
Light-Load and PWM-Only Operation
•Internal 1.6-ms Voltage Servo Soft-Start
•Adaptive On-Time Control Architecture With Four
Selectable Frequency Setting
•4500 ppm/°C R
Current Sensing
DS(on)
•Built-In Output Discharge
•Powergood Output
•Built-In OVP/UVP/OCP
•Thermal Shutdown (Nonlatch)
•QFN, 24-Pin (RGE)
2Applications
•Notebook Computers
•I/O Supplies
•System Power Supplies
The TPS51125 is a cost-effective, dual-synchronous
buck controller targeted for notebook system power
supply solutions. The device provides 5-V and 3.3-V
LDOs and requires few external components. The
270-kHz VCLK output can be used to drive an
external charge pump, thus generating gate drive
voltage for the load switches without reducing the
efficiency of the main converter. The TPS51125
supports high-efficiency, fast-transient response and
provides a combined power-good signal. Out-ofAudio mode light-load operation enables low acoustic
noise at much higher efficiency than conventional
forced PWM operation. Adaptive on-time D-CAP™
control provides convenient and efficient operation.
The part operates with supply input voltages ranging
from 5.5 V to 28 V and supports output voltages from
2 V to 5.5 V. The TPS51125 is available in a 24-pin
QFN package and is specified from -40°C to 85°C
ambient temperature range.
Device Information
PART NUMBERPACKAGEBODY SIZE (NOM)
TPS51125VQFN (24)4.00 mm x 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
(1)
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRVH121High-side N-channel MOSFET driver outputs. LL referenced drivers.
DRVH210
DRVL119Low-side N-channel MOSFET driver outputs. GND referenced drivers.
DRVL212
ENTRIP11Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to set
ENTRIP26
EN013I/O
GND15—Ground.
LL120Switch node connections for high-side drivers, current limit and control circuitry.
LL211
PGOOD23OPower Good window comparator output for channel 1 and 2. (Logical AND)
sense. Short to ground to shutdown a switcher channel.
DS(on)
Master enable input.
Open : LDOs on, and ready to turn on VCLK and switcher channels.
620 kΩ to GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON.
GND : disable all circuit
I
Selection pin for operation mode:
OOA auto skip : Connect to VREG3 or VREG5
Auto skip : Connect to VREF
Auto skip : Connect to VREF
On-time adjustment pin
365 kHz/460 kHz setting : connect to VREG5
300 kHz/375 kHz setting : connect to VREG3
245 kHz/305 kHz setting : connect to VREF
200 kHz/250 kHz setting : connect to GND
Product Folder Links: TPS51125
TPS51125
SLUS786H –OCTOBER 2007–REVISED JANUARY 2015
www.ti.com
Pin Functions (continued)
PIN
NAMENO.
VBST122Supply input for high-side N-channel MOSFET driver (boost terminal).
VBST29
VCLK18O270-kHz clock output for 15-V charge pump.
VFB12SMPS feedback inputs. Connect with feedback resistor divider.
VFB25
VIN16IHigh voltage power supply input for 5-V/3.3-V LDO.
VO124Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge inputs.
VO27
VREF3O2-V reference voltage output. Connect 220-nF to 1-μF ceramic capacitor to Signal GND near the device.
VREG38O
VREG517O5-V power supply output. Connect 33-μF ceramic capacitor to Power GND near the device.
I/ODESCRIPTION
I
I
I/O
VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
3.3-V power supply output. Connect 10-μF ceramic capacitor to Power GND near the device. A 1-μF
ceramic capacitor is acceptable when not loaded.
PGOOD, VCLK, VREG3, VREG5, VREF, DRVL1, DRVL2–0.36
Junction temperature, T
Storage temperature, T
J
stg
–40125°C
–55150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.
6.2 ESD Ratings
VALUEUNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
Electrostatic dischargeV
(ESD)
Charged-device model (CDM), per JEDEC specification JESD22-±1500
(2)
C101
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1)
±2000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
Supply voltageVIN5.528
VBST1, VBST2–0.134
Input voltageVBST1, VBST2 (with respect to LLx)–0.15.5
The TPS51125 is a cost-effective, dual-synchronous buck controller targeted for notebook system-power supply
solutions. It provides 5 V and 3.3 V LDOs and requires few external components. With D-CAP™ control mode
implemented, compensation network can be removed. Besides, the fast transient response also reduced the
output capacitance.
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP mode. D-CAP mode does not require external
compensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ON state. This MOSFET
is turned off, or becomes OFF state, after internal one-shot timer expires. This one shot is determined by VINand
V
to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time control. The
OUT
MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal 2-V
reference. The inductor current information is also monitored and should be below the overcurrent threshold to
initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each OFF state to keep the
conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching
cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this
enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is
kept over broad range of load current.
7.3.2 Adaptive On-Time Control and PWM Frequency
TPS51125 does not have a dedicated oscillator onboard. However, the part runs with pseudo-constant frequency
by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is controlled inverse
proportional to the input voltage and proportional to the output voltage so that the duty ratio will be kept as
VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal connection as
Table 1.
Table 1. Tonsel Connection and Switching Frequency
From small-signal loop analysis, a buck converter using D-CAPTMmode can be simplified as shown in Figure 31.
Figure 31. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM
comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high
enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the
0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
As f0is determined solely by the characteristics of the output capacitor, loop stability of D-CAP mode is
determined by the chemistry of the capacitor. For example, specialty polymer capacitors (SP-CAP) have Co in
the order of several 100 μF and ESR in range of 10 mΩ. These will make f0in the order of 100 kHz or less and
the loop will be stable. However, ceramic capacitors have f0at more than 700 kHz, which is not suitable for this
operational mode.
7.3.4 Ramp Signal
The TPS51125 adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described in
the previous section, the feedback voltage is compared with the reference information to keep the output voltage
in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new switching cycle
is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled to start with
–20 mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By using this
scheme, the TPS51125 improve jitter performance without sacrificing the reference accuracy.
7.3.5 Light-Load Condition in Auto-Skip Operation
The TPS51125 automatically reduces switching frequency at light-load conditions to maintain high efficiency.
This reduction of frequency is achieved smoothly and without increase of V
described as follows. As the output current decreases from heavy load condition, the inductor current is also
reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between
continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero
inductor current is detected. As the load current further decreased, the converter runs in discontinuous
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next
ON cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current
increase from light load to heavy load, switching frequency increases to the preset value as the inductor current
reaches to the continuous conduction. The transition load point to the light load operation I
OUT(LL)
(that is, the
threshold between continuous and discontinuous conduction mode) can be calculated as follows;
where
•f is the PWM switching frequency(2)
Switching frequency versus output current in the light load condition is a function of L, VINand V
decreases almost proportional to the output current from the I
at I
/5 if the frequency setting is 300 kHz.
OUT(LL)
OUT(LL)
given above. For example, it will be 60 kHz
OUT
, but it
7.3.6Out-of-Audio Light-Load Operation
Out-of-Audio (OOA) light-load mode is a unique control feature that keeps the switching frequency above
acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion
efficiency. When the Out-of-Audio operation is selected, OOA control circuit monitors the states of both MOSFET
and force to change into the ON state if both of MOSFETs are off for more than 32 μs. This means that the top
MOSFET is turned on even if the output voltage is higher than the target value so that the output capacitor is
tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output
voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.
7.3.7 VREG5/VREG3 Linear Regulators
There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5
serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers.
The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add a ceramic capacitor with a value of at least 33 μF and place it close to the VREG5 pin, and add at most 10
μF to the VREG3 pin. Total capacitance connected to the VREG3 pin should not exceed 10 μF.
7.3.8 VREG5 Switch Over
When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal
5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The
510-μs powergood delay helps a switch over without glitch.
7.3.9 VREG3 Switch Over
When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated,
internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over
MOSFET. The 510-μs powergood delay helps a switch over without glitch.
7.3.10 Powergood
The TPS51125 has one powergood output that indicates 'high' when both switcher outputs are within the targets
(AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If the
output voltage becomes within +/-5% of the target value, internal comparators detect power good state and the
powergood signal becomes high after 510-μs internal delay. Therefore PGOOD goes high around 2.5 ms after
ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal
becomes low after 2-μs internal delay. The powergood output is an open-drain output and is needed to be pulled
up outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the
target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the
low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and
the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio mode.
When ENTRIPx is low, the TPS51125 discharges outputs using internal MOSFET which is connected to VOx
and GND. The current capability of these MOSFETs is limited to discharge slowly.
7.3.12 Low-Side Driver
The low-side driver is designed to drive high current low R
N-channel MOSFETs. The drive capability is
DS(on)
represented by its internal resistance, which are 4 Ω for VREG5 to DRVLx and 1.5 Ω for DRVLx to GND. A dead
time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous
drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current
is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the highside gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125 package.
7.3.13 High-Side Driver
The high-side driver is designed to drive high current, low R
N-channel MOSFETs. When configured as a
DS(on)
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are
4 Ω for VBSTx to DRVHx and 1.5Ω for DRVHx to LLx.
7.3.14 VCLK for Charge Pump
270-kHz clock signal can be used for charge pump circuit to generate approximately 15-V dc voltage. The clock
signal becomes available when EN0 becomes higher than 2.4 V or open state. Example of control circuit is
shown in Figure 32. Note that the clock driver uses VO1 as its power supply. Regardless of enable or disable of
VCLK, power consumption of the TPS51125 is almost the same. Therefore even if VCLK is not used, one can let
EN0 pin open or supply logic ‘high’, as shown in Figure 32, and let VCLK pin open. This approach further
reduces the external part count.
TPS51125 has cycle-by-cycle over current limiting control. The inductor current is monitored during the OFF
state and the controller keeps the OFF state during the inductor current is larger than the over current trip level.
In order to provide both good accuracy and cost effective solution, TPS51125 supports temperature
compensated MOSFET R
setting resistor, R
. ENTRIPx terminal sources I
TRIP
the trip level is set to the OCL trip voltage V
sensing. ENTRIPx pin should be connected to GND through the trip voltage
DS(on)
TRIP
current, which is 10 μA typically at room temperature, and
TRIP
as below. Note that the V
is limited up to about 205 mV
TRIP
internally.
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage.
The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to
compensate the temperature dependency of the R
. GND is used as the positive current sensing node so
DS(on)
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom
MOSFET.
As the comparison is done during the OFF state, V
current at over current threshold, I
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
, can be calculated in Equation 4.
OCP
sets valley level of the inductor current. Thus, the load
TRIP
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and
shutdown both channels.
(3)
(4)
7.3.16 Overvoltage and Undervoltage Protection
TPS51125 monitors a resistor divided feedback voltage to detect over and undervoltage. When the feedback
voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit
latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
Also, TPS51125 monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51125 turns off the
top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes
high and an internal UVP delay counter begins counting. After 32 μs, TPS51125 latches OFF both top and
bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms
following ENTRIPx has become high.
7.3.17 UVLO Protection
TPS51125 has VREG5 undervoltage lockout protection (UVLO). When the VREG5 voltage is lower than UVLO
threshold voltage both switch mode power supplies are shut off. This is nonlatch protection. When the VREG3
voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.
7.3.18 Thermal Shutdown
TPS51125 monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C),
TPS51125 is shut off including LDOs. This is nonlatch protection.
7.4 Device Functional Modes
7.4.1 Enable and Soft-Start
EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those
three regulators and minimize the shutdown supply current to 10 μA. Pulling this node up to 3.3 V or 5 V will turn
the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become
ready to enable at this standby mode. The TPS51125 has an internal, 1.6 ms, voltage servo softstart for each
channel. When the ENTRIPx pin becomes higher than the enable threshold voltage, which is typically 430 mV,
an internal DAC begins ramping up the reference voltage to the PWM comparator. Smooth control of the output
voltage is maintained during start up. As TPS51125 shares one DAC with both channels, if ENTRIPx pin
becomes higher than the enable threshold voltage while another channel is starting up, soft start is postponed
until another channel soft start has completed. If both of ENTRIP1 and ENTRIP2 become higher than the enable
threshold voltage at a same time (within 60 μs), both channels start up at same time.
Table 2. Enabling State
EN0ENTRIP1ENTRIP2VREFVREG5VREG3CH1CH2VCLK
GNDDon’t CareDon’t CareOffOffOffOffOffOff
R to GNDOffOffOnOnOnOffOffOff
R to GNDOnOffOnOnOnOnOffOff
R to GNDOffOnOnOnOnOffOnOff
R to GNDOnOnOnOnOnOnOnOff
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TPS51125 is typically used as a dual-synchronous buck controller, which convert an input voltage ranging
from 5.5 V to 28 V, to output voltage 5 V and 3.3 V respectively, targeted for notebook system-power supply
solutions.
(1) Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
with normal MOSFET.
8.2.2.1 Determine Output Voltage
The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 31. R1 is
connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND.
Recommended R2 value is from 10 kΩ to 20 kΩ. Determine R1 using equation as below.
3.3 μH, 15.6 A, 5.92
mΩ
30 V, 12 mΩFairchildFDS6690AS
www.ti.com
(5)
8.2.2.2 Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum
output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable
operation.
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as follows.
(7)
8.2.2.3 Choose the Output Capacitors
Organic semiconductor capacitors or specialty polymer capacitors are recommended. Determine ESR to meet
required ripple voltage. A quick approximation is as shown in Equation 8.
where
•D is the duty cycle
•the required output ripple slope is approximately 20 mV per tSW(switching period) in terms of VFB terminal
voltage(8)
8.2.2.4 Choose the Low-Side MOSFET
It is highly recommended that the low-side MOSFET should have an integrated Schottky barrier diode, or an
external Schottky barrier diode in parallel to achieve stable operation.
The TPS51125 is designed to operate from input supply voltage in the range of 5.5 V to 28 V, make sure power
supply voltage in this range.
10Layout
10.1 Layout Guidelines
Consider these points before starting layout work using the TPS51125.
•TPS51125 has only one GND pin and special care of GND trace design makes operation stable, especially
when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF
capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting
resistor, EN0 pull-down resistor and EN0 bypass capacitor as shown in the thin GND line of Figure 43. This
trace is named Signal Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and
source of low-side MOSFETs as close as possible, and connect them to another inner GND plane with GND
pin of the device, GND terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in
the bold GND line of Figure 43. This trace is named Power Ground (PGND). SGND should be connected to
PGND at the middle point between ground terminal of VOUT capacitors.
•Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be
placed on one side of the PCB (solder side). Power components of each channel should be at the same
distance from the TPS51125. Other small signal parts should be placed on another side (component side).
Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
•PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET
and high-voltage side of the inductor, should be as short and wide as possible.
•VREG5 requires capacitance of at least 33 μF and VREG3 requires capacitance of at most 10 μF. VREF
requires a 220-nF ceramic bypass capacitor which should be placed close to the device and traces should be
no longer than 10 mm.
•Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the
device if possible.
•The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output
voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3
is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just
monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the
device. Place on the component side and avoid vias between this resistor and the device.
•Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5
mm (20 mils) diameter along this trace.
•All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD,
TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx,
DRVHx and VCLK nodes to avoid coupling.
•Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel
interference.
•In order to effectively remove heat from the package, prepare thermal land and solder to the package’s
thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land
to the internal ground plane should be used to help dissipation. This thermal land underneath the package
should be connected to SGND, and should NOT be connected to PGND.
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Trademarks
D-CAP is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
ProductsApplications
Audiowww.ti.com/audioAutomotive and Transportationwww.ti.com/automotive
Amplifiersamplifier.ti.comCommunications and Telecomwww.ti.com/communications
Data Convertersdataconverter.ti.comComputers and Peripheralswww.ti.com/computers
DLP® Productswww.dlp.comConsumer Electronicswww.ti.com/consumer-apps
DSPdsp.ti.comEnergy and Lightingwww.ti.com/energy
Clocks and Timerswww.ti.com/clocksIndustrialwww.ti.com/industrial
Interfaceinterface.ti.comMedicalwww.ti.com/medical
Logiclogic.ti.comSecuritywww.ti.com/security
Power Mgmtpower.ti.comSpace, Avionics and Defensewww.ti.com/space-avionics-defense
Microcontrollersmicrocontroller.ti.comVideo and Imagingwww.ti.com/video
RFIDwww.ti-rfid.com
OMAP Applications Processorswww.ti.com/omapTI E2E Communitye2e.ti.com
Wireless Connectivitywww.ti.com/wirelessconnectivity