TPS51124 Dual Synchronous Step-Down Controller for Low-Voltage Power Rails
1 Features3 Description
1
•High Efficiency, Low-Power Consumption,
Shutdowns to <1 μA
•Fixed Frequency Emulated On-Time Control,
Frequency Selectable From Three Options
•D-CAP™ Mode Enables Fast Transient Response
•Auto-Skip Mode
•Less Than 1% Initial Reference Accuracy
•Low Output Ripple
•Wide Input Voltage Range: 3 V to 28 V
•Output Voltage Range: 0.76 V to 5.5 V
•Low-Side R
Loss-less Current Sensing
DS(ON)
•Adaptive Gate Drivers With Integrated Boost
Diode
•Internal 1.2-ms Voltage-Servo Soft-Start
•Powergood Signals for Each Channel With Delay
Timer
•Output Discharge During Disable, Fault
2 Applications
Notebook I/O and Low-Voltage System Bus
The TPS51124 is a dual, adaptive on-time D-CAP™
mode synchronous buck controller. The part enables
system designers to cost effectively complete the
suite of notebook power bus regulators with the
absolute lowest external component count and lowest
standby consumption. The fixed frequency emulated
adaptive on-time control supports seamless operation
between PWM mode at heavy load condition and
reduced frequency operation at light load for high
efficiency down to milliampere range. The main
control loop for the TPS51124 uses the D-CAP mode
that optimized for low ESR output capacitors such as
POSCAPorSP-CAPpromisesfasttransient
response with no external compensation. Simple and
separate power good signals for each channel allow
flexibility of power sequencing. The part provides a
convenient and efficient operation with supply input
voltages (V5IN, V5FILT) ranging from 4.5 V to 5.5 V,
conversionvoltages(drainvoltageforthe
synchronous high-side MOSFET) from 3 V to 28 V
and output voltages from 0.76 V to 5.5 V.
The TPS51124 is available in 24-pin VQFN package
specified from –40°C to 85°C ambient temperature
range.
TPS51124
Device Information
(1)
PART NUMBERPACKAGEBODY SIZE (NOM)
TPS51124VQFN (24)4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Changes from Revision B (September 2010) to Revision CPage
•Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1
Changes from Revision A (November 2005) to Revision BPage
•Changed From: pin 48 = PGND1 To: pin 18 = PGND1 in the Pin Out illustration................................................................. 3
•Updated the Function Block Diagram................................................................................................................................... 10
•Figure 19 - Removed the hysteretic symbol from the PWM component.............................................................................. 15
•Updated equation 9. Changed From: V
x 0.01 To: V
OUT
x 0.0132.................................................................................. 16
OUT
Changes from Original (November 2005) to Revision APage
•Updated the the circut illustration, Pin 21 changed From DRVL1 To: DRVH1 and Pin 19 changed From: DRVH1 to
DRVH121
DRVH210
DRVL119
DRVL212
EN123
EN28
GND3ISignal ground pin
LL120
LL211
PGND118
PGND213
PGOOD124Power Good window comparator open drain output for channel 1 and 2. Pull up with a resistor to 5 V, or
PGOOD27
TONSEL4IOn-time selection pin. See Table 1.
TRIP117Overcurrent trip point set input. Connect resistor from this pin to GND to set threshold for synchronous lowTRIP214
VBST122Supply input for synchronous high-side MOSFET driver (Boost Terminal). Connect capacitor from this pin
VBST29
VFB12
VFB25
VO11
VO26
V5FILT15I
V5IN16I5-V power supply input for FET gate drivers. Internally connected to VBSTx by PN diodes.
Synchronous high-side MOSFET driver outputs. LL node referenced floating drivers. The gate drive voltage
O
is defined by the voltage across VBST to LL node flying capacitor.
Synchronous low-side MOSFET driver outputs. PGND referenced drivers. The gate-drive voltage is defined
O
by V5IN voltage.
IChannel 1 and channel 2 enable pins. Connect to 5 V or 3.3 V to turn on SMPS
Switch node connections for high-side drivers return. Also serve as input to current comparators and input
I/O
voltage monitor for on-time control circuitry.
Ground returns for DRVL1 and DRVL2. Also serve as input of current comparators. Connect PGND1,
I/O
PGND2, and GND strongly together near the IC. Output discharge current flows through this pin, also.
Oappropriate signal voltage. Current capability is 5 mA. PGOOD goes high 0.5 ms after VFB comes within
specified limits. Power bad, or the terminal goes low, is within 10 μs.
Iside R
current comparator.
Ito respective LL terminals. An internal PN diode is connected between V5IN to each of these pins. User
can add external Schottky diode if forward drop is critical to drive the MOSFET.
ISMPS voltage feedback inputs. Connect with feedback resistor divider.
Output connections to SMPS. These terminals serve two functions: On-time adjustment and output
I
discharge.
5-V power supply input for the entire control circuit except the MOSFET drivers. Connect RC low-pass filter
from V5IN to V5FILT.
sense. Voltage across this pin and GND is compared to voltage across PGND and LL at over-
DS(on)
Product Folder Links: TPS51124
TPS51124
SLVS616C –NOVEMBER 2005–REVISED DECEMBER 2014
6 Specifications
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6.1Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
VBST1, VBST2–0.336
Input voltageV
Output
voltage
T
Operating ambient temperature–4085°C
A
T
Junction temperature–40125°C
J
T
Storage temperature–55150°C
stg
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage
values are with respect to the network ground terminal unless otherwise noted
Figure 10. Switching Frequency (MED) vs Output Voltage
Figure 12. 1.05-V Output Voltage vs Output Current
Product Folder Links: TPS51124
0
20
40
60
80
100
0.0010.010.1110
VI=21V
VI=7V
1.5V
TONSEL=FLOAT
I
OUT2
− OutputCurrent − A
VI=12V
− Efficiency − %
1.425
1.450
1.475
1.500
1.525
1.550
1.575
0510152025
1.5 V
TONSEL = FLOAT
V
OUT2
− Output Voltage − V
VI − Input Voltage − V
IO = 0 A
IO = 5 A
0
20
40
60
80
100
0.0010.010.1110
VI=21V
VI=7V
1.05V
TONSEL=FLOAT
I
OUT1
− OutputCurrent − A
VI=12V
− Efficiency − %
1.425
1.450
1.475
1.500
1.525
1.550
1.575
0.0010.010.1110
VI = 21 V
VI = 12 V
VI = 7 V
1.5 V
TONSEL = FLOAT
V
OUT2
− Output Voltage − V
I
OUT2
− Output Current − A
1
1.025
1.050
1.075
1.1
0510152025
1.05 V
TONSEL = FLOAT
V
OUT1
− Output Voltage − V
VI − Input Voltage − V
IO = 0 A
IO = 5 A
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Typical Characteristics (continued)
TPS51124
SLVS616C –NOVEMBER 2005–REVISED DECEMBER 2014
Figure 13. 1.5-V Output Voltage vs Output Current
(1)
Figure 14. 1.05-V Output Voltage vs Input Voltage
Figure 15. 1.5-V Output Voltage vs Input VoltageFigure 16. 1.05-V Efficiency vs Output Current
(1) The data of Figure 13–Figure 16 are measured from the Typical Application Circuit of Figure 18 and Table 2
(1) The data of Figure 17–Figure 22 are measured from the Typical Application Circuit of Figure 18 and Table 2