TEXAS INSTRUMENTS TPS40100 Technical data

TPS40100
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MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER
WITH ADVANCED SEQUENCING AND OUTPUT MARGINING
FEATURES APPLICATIONS
Operation over 4.5 V to 18 V Input Range
Adjustable Frequency (Between 100 kHz and
600 kHz) Current Feedback Control
Output Voltage Range From 0.7 V to 5.5 V
Simultaneous, Ratiometric and Sequential
Startup Sequencing
Adaptive Gate Drive
Remote Sensing (Via Separate GND/PGND)
Internal Gate Drivers for N-channel MOSFETs
Internal 5-V Regulator
24-Pin QFN Package
Thermal Shutdown
Programmable Overcurrent Protection
Power Good Indicator
1%, 690-mV Reference
Output Margining, 3% and 5%
Programmable UVLO (with Programmable
Hysteresis)
Frequency Synchronization
Servers
Networking Equipment
Cable Modems and Routers
XDSL Modems and Routers
Set-Top Boxes
Telecommunications Equipment
Power Supply Modules
DESCRIPTION
The TPS40100 is a mid voltage, wide-input (between
4.5 V and 18 V), synchronous, step-down controller. The TPS40100 offers programmable closed loop soft-start, programmable UVLO (with programmable hysteresis), programmable inductor sensed current limit and can be synchronized to other timebases. The TPS40100 incorporates MOSFET gate drivers for external N-channel high-side and synchronous rectifier (SR) MOSFET. Gate drive logic incorporates adaptive anti-cross conduction circuitry for improved efficiency, reducing both cross conduction and diode conduction in the rectifier MOSFET. The externally programmable current limit provides a hiccup overcurrent recovery characteristic.
SLUS601–MAY 2005
TYPICAL APPLICATION
V
24 2223 21 20 19
PG
SS
VO
GM
VDD
ISNS
HDRV
5VBP
LDRV
PGND
SW
BST
18
17
16
15
14
13
COMP
1
2
3
V
V
IN
TRKIN
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
4
5
6
MGU
MGD
FB
TRKOUT
TRKIN
UVLO
ILIM
RT
TPS40100
BIAS
SYNC
GND
IN
UDG04137
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated
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TPS40100
SLUS601–MAY 2005
ORDERING INFORMATION
T
A
-40°C to 85°C QFN
PACKAGE PART NUMBER
TPS40100RGER
TPS40100RGET
(1) The QFN package (RGE) is available taped and reeled only. Use
large reel device type R (TPS40100RGER) to order quantities of 3,000 per reel. Use small reel device type T (TPS40100RGET) to order quantities of 250 per reel.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
VDD -0.3to20
5VBP, BIAS, FB, ILIM, ISNS, LDRV, MGU, MGD, PG, SS, SYNC, UVLO, VO
BST to SW, HDRV to SW
V
Input voltage range V
IN
SW -1.5 to V
SW (transient) < 100 ns -6 to 30
TRKIN -0.3to20
GNDtoPGND -0.3to0.3
TRKOUT -0.3 to 8.0
HDRV, LDRV (RMS) 0.5
HDRV, LDRV (peak) 2.0
FB, COMP, TRKOUT 10 to -10 mA
SS 20 to -20
I
Input current range PG 20
IN
GM 1mA
RT 10
V5BP 50
RT source 100 µA
T
T
Operating junction temperature range –40 to 125
J
Storage temperature –55 to 150
stg
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) BST to SW and HDRV to SW are relative measurements. BST and HDRV can be this amount of voltage above or below the voltage at
SW.
(3) V5BP current includes gate drive current requirements. Observe maximum TJrating for the device.
(2)
(1)
(1)
TPS40100 UNIT
-0.3 to 6
-0.3 to 6.0
VIN
A
(3)
°C
2
TPS40100
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SLUS601–MAY 2005
ELECTRICAL CHARACTERISTICS
-40°C ≤ TA=TJ≤ 85°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE
V
VDD
OPERATING CURRENT
I
DD
I
SD
5VPB
OSCILLATOR/RAMP GENERATOR
f
SW
V
RAMP
t
OFF
D
MIN
t
MIN
V
VLY
FREQUENCY SYNCHRONIZATION
V
IH
V
IL
I
SYNC
t
SYNC
t
SYNC_SH
SOFT-START AND FAULT IDLE
I
SS
I
SS_SINK
V
SSC
V
SSD
V
SSOS
ERROR AMPLIFIER
GBWP Gain bandwidth product
AVOL Open loop 60 80 dB
I
BIAS
I
OH
I
OL
FEEDBACK REFERENCE
V
FB
(1) Ensured by design. Not production tested. (2) To meet set up time requirements for the synchronization circuit, a negative logic pulse must be greater than 100 ns wide.
Operating range 4.5 18.0 V
Quiescent current VFB> 0.8 V, 0% duty cycle 1.3 1.8 2.5 mA
Shutdown current V
Internal regulator V
Programmable oscillator frequency 100 600
Oscillator frequency accuracy 250 275 300
Ramp amplitude
Fixed off-time 100 150 ns
Minimum duty cycle 0%
Minimum controllable pulse width
Valley voltage
High-level input voltage 2
Low-level input voltage 0.8
Input current, SYNC V
Mimimum pulse width, SYNC 50
Minimum set-up/hold time, SYNC
Soft-start source (charge) current 13 20 25
Soft-start sink (discharge) current 3.4 5.0 6.6
Soft-start completed voltage 3.25 3.40 3.75
Soft-start discharged voltage 0.15 0.20 0.25
Retry interval time to SS time ratio
Offset from SS to error amplifier 300 500 800 mV
Input bias current, FB 50 200 nA
High-level output current 23
Low-level output current 23
Slew rate
Feedback voltage reference mV
=12V,RRT= 182 k,RGM= 232 k,R
VDD
(1)
(1)
(1)
(2)
(1)
(1)
(1)
= 121 k(unless otherwise noted)
ILIM
< 1 V 500 µA
UVLO
7V≤ V
4.5 V V
4.5 V V
-40°C ≤ TA=TJ≤ 125°C
18 V, 0 mA I
VDD
< 7 V, 0 mA I
VDD
<18V,
VDD
30 mA 4.7 5.0 5.3
LOAD
30 mA 4.3 5.0 5.3
LOAD
0.5 V
C
= 4.7 nF, -40°C TA=TJ≤ 125°C 175 ns
LOAD
1.0 1.6 2.0 V
= 2.5 V 4.0 5.5 10.0 µA
SYNC
100
16
3.5 5.0 MHz
2.1 V/µs
TA=25°C 686 690 694
-40°C < TA=TJ≤ 125°C 683 697
kHz
P-P
V
ns
µA
V
mA
3
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TPS40100
SLUS601–MAY 2005
ELECTRICAL CHARACTERISTICS (continued)
-40°C ≤ TA=TJ≤ 85°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE MARGINING
V
FBMGU
I
MGUP
V
FBMGD
I
MGDN
t
MGDLY
t
MGTRAN
CURRENT SENSE AMPLIFIER
gm
CSA
TC
GM
V
GMLIN
I
ISNS
V
GMCM
CURRENT LIMIT
V
ILIM
t
ILIMDLY
DRIVER SPECIFICATIONS
t
RHDRV
t
FHDRV
I
HDRVSRPKS
I
HDRVSRMIL
I
HSDVSNPK
I
HDRVSNMIL
R
HDRVUP
R
HDRVDN
t
RLDRV
t
FLDRV
I
LDRVSRPK
I
LDRVSNMIL
I
LSDVSNPK
R
LDRVUP
R
LDRVDN
I
SWLEAK
POWERGOOD
V
LPGD
t
PGD
V
LPGDNP
V
OV
V
UV
(3) Margining delay time is the time delay from an assertion of a margining command until the output voltage begins to transition to the
margined voltage.
(4) Ensured by design. Not production tested.
Feedback voltage margin 5% up V
Feedback voltage margin 3% up 2 V ≤ V
Margin-up bias current 60 80 100 µA
Feedback voltage margin 5% down V
Feedback voltage margin 3% down 2 V ≤ V
Margin-down bias current 60 80 100 µA
Margining delay time
Margining transition time 1.5 7.0
Current sense amplifier gain TJ=25°C 300 333 365 µS
Amplifier gain temperature coefficient -2000 ppm/°C
Gm linear range voltage TJ=25°C -50 50 mV
Bias current at ISNS pin VVO=V
Input voltage common mode V
ILIM pin voltage to trip overcurrent 1.44 1.48 1.52 V
Current limit comparator propagation delay HDRV transition from on to off 70 140 ns
HIgh-side driver rise time
HIgh-side driver fall time
HIgh-side driver peak source current
HIgh-side driver source current at 2.5 V
HIgh-side driver peak sink current
High-side driver sink current at 2.5 V
HIgh-side driver pullup resistance I
HIgh-side driver pulldown resistance I
Low-side driver rise time
Low-side driver fall time
Low-side driver peak source current
Low-side driver source current at 2.5 V
Low-side driver peak sink current
Low-side driver sink current at 2.5 V
Low-side driver pullup resistance I
Low-side driver pulldown resistance I
Leakage current from SW pin -1 1 µA
Powergood low voltage I
Powergood delay time 15 25 35 µs
Powergood low voltage , no device power 1.00 1.25 V
Power good overvoltage threshold, V
Power good undervoltage threshold, V
=12V,RRT= 182 k,RGM= 232 k,R
VDD
MGU
MGD
(3)
4.5 V VIN≤ 5.5 V 0 3.6
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
FB
FB
C
LOAD
C
LOAD
(4)
V
HDRV-VSW
V
HDRV-VSW
HDRV
HDRV
C
LOAD
C
LOAD
V
LDRV
V
LDRV
LDRV
LDRV
PGD
V
VDD
5-V supply
= 121 k(unless otherwise noted)
ILIM
500 mV 715 725 735
3 V 700 711 720
MGU
500 mV 645 655 665
3 V 660 669 680
MGD
12 30
= 3.3 V 250 nA
ISNS
06
= 4.7 nF 57
= 4.7 nF 47
800
= 2.5 V 700
1.3
= 2.5 V 1.2
= 300 mA 2.4 4.0
= 300 mA 1.0 1.8
= 4.7 nF 57
= 4.7 nF 47
800
= 2.5 V 700
1.3
= 2.5 V 1.2
= 300 mA 2.0 4.0
= 300 mA 0.8 1.5
= 2 mA 30 100 mV
= OPEN, 10-kpullup to external
765
615
mV
mA
ms
ns
mA
A
ns
mA
A
mV
4
TPS40100
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ELECTRICAL CHARACTERISTICS (continued)
-40°C ≤ TA=TJ≤ 85°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TRACKING AMPLIFIER
V
TRKOS
V
TRKCM
V
TRK
V
HTKROUT
V
LTKROUT
I
SRCTRKOUT
I
SNKTRKOUT
V
TRKDIF
GBWP
AVOL
PROGRAMMABLE UVLO
V
UVLO
I
UVLO
INTERNALLY FIXED UVLO
V
UVLOFON
V
UVLOFOFF
V
UVLOHYST
THERMAL SHUTDOWN
T
SD
T
SDHYST
Tracking amplifier input offset voltage mV
Input common mode, active range 0 6
Tracking amplifier voltage range
High-level output voltage, TRKOUT
Low-level output voltage, TRKOUT 0 0.5
Source current, TRKOUT 0.65 2.00
Sink current, TRKOUT 12
Differential voltage from TRKIN to VO 18 V
Tracking amplifier gain bandwidth product
TRK
Tracking amplifier open loop DC gain
TRK
Undervoltage lockout threshold 1.285 1.332 1.378 V
Hysteresis current 9.0 10.0 10.8 µA
Fixed UVLO turn-on voltage at VDD pin -40°C ≤ TA< 125°C 3.850 4.150 4.425
Fixed UVLO turn-off voltage at VDD pin 3.75 4.06 4.35
UVLO hysteresis at VDD pin 85 mV
Thermal shutdown temerature
Hysteresis
=12V,RRT= 182 k,RGM= 232 k,R
VDD
(6)
(6)
(6)
(6)
V
TRKOS=VTRKIN-VO;VVO
V
TRKOS=VTRKIN-VO
4.5 V V
5V<V
V
VDD
V
VDD
SLUS601–MAY 2005
= 121 k(unless otherwise noted)
ILIM
2V 7 25 40
;2V<VVO≤ 6 V -5 25 40
5.5 V 0 3.6
VDD
VDD
18 V
(5)
06
= 12 V 5.0 6.5 8.0
= 4.5 V 3.2 3.6
1MHz
60 dB
130 165
25
V
mA
V
°C
(5) Amplifier can track to the lesser of 6 V or (VDD× 0.95) (6) Ensured by design. Not production tested.
DEVICE INFORMATION
MGU
MGD
SYNC
PG
VO
ISNS
24
23
22
21
20
19
RGE PACKAGE
(BOTTOM VIEW)
COMPFBTRKOUT
TRKIN
UVLO
123456
18 17 16 15 14 13
VDD
SW
BST
HDRV
5VBP
ILIM
7
8
9
10
11
12
LDRV
RT
BIAS
GND
SS
GM
PGND
5
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TPS40100
SLUS601–MAY 2005
DEVICE INFORMATION (continued)
TERMINAL FUNCTIONS
TERMINAL
NAME NO.
5VBP 14 O pin to PGND. Power for external circuitry may be drawn from this pin. The total gate drive
BIAS 8 O
BST 15 I connected from 5VBP (A) to BST(K). A schottky diode is recommended for this purpose. A
COMP 1 O
FB 2 I
GM 11 I Connect a resistor from this pin to GND to set the gain of the current sense amplifier.
GND 9 -
HDRV 16 O Floating gate drive for the high side N-channel MOSFET.
ILIM 6 O connected from this pin to GND. When this voltage reaches 1.48 V, an overcurrent condition
ISNS 19 I
LDRV 13 O Gate drive for the N-channel synchronous rectifier.
MGD 23 I 10 k, the output voltage is decreased by 5%. The 3% margin down at the output voltage is
MGU 24 I k, the output voltage is increased by 5%. The 3% margin up at the output voltage is
PG 21 O FB pin is more than 10% higher or lower than 690 mV, a UVLO condition exists, soft-start is
PGND 12 - Power ground for internal drivers
RT 7 I A resistor connected from this pin to GND sets operating frequency.
SS 10 I
SW 17 I
SYNC 22 I synchronize the oscillator frequency to an external master clock. This pin may be left floating
TRKIN 4 I tracks TRKIN voltage with a small controlled offset (typically 25 mV) when the tracking
TRKOUT 3 O the equivalent impedance at the FB node. The diode should be a low leakage type to
UVLO 5 I
VDD 18 I Supply voltage for the device.
VO 20 I
I/O DESCRIPTION
Output of an internal 5-V regulator. A 1-µF bypass capacitor should be connected from this
current and external current draw should not cause the device to exceed thermal capabilities
The bypassed supply for internal device circuitry. Connect a 0.1-µF or greater ceramic capacitor from this pin to GND.
Gate drive voltage for the high-side N-channel MOSFET. An external diode must be
capacitor must be connected from this pin to the SW pin.
Output of the error amplifier. A feedback network is connected from this pin to the FB pin for control loop compensation.
Inverting input to the error amplifier. In normal operation the voltage on this pin is equal to the internal reference voltage (approximately 690 mV).
Low power or signal ground for the device. All signal level circuits should be referenced to this pin unless otherwise noted.
Current limit pin used to set the overcurrent threshold and transient ride out time. An internal current source that is proportional to the inductor current sets a voltage on a resistor
is declared by the device. Adding a capacitor in parallel with the resistor to GND sets a time delay that can be used to help avoid nuisance trips.
Input from the inductor DCR sensing network. This input signal is one of the inputs to the current sense amplifier for current feedback control and overcurrent protection
Margin down pin used for load stress test. When this pin is pulled to GND through less than
accommodated when this pin is connected to GND through a 30-kresistor.
Margin up pin used for load stress test. When this pin is pulled to GND through less than 10
accommodated when this pin is connected to GND through a 30-kresistor.
Open drain power good output for the device. This pin is pulled low when the voltage at the
active, tracking is active, an overcurrent condition exists or the die is over temperature.
Soft-start programming pin. A capacitor connected from this pin to ground programs the soft-start time. This pin is also used as a time out function during an overcurrent event.
Connected to the switched node of the converter. This pin is the return line for the flying high side driver.
Rising edge triggered synchronization input for the device. This pin can be used to
or grounded if the function is not used.
Control input allowing simultaneous startup of multiple controllers. The converter output
amplifier is used. See application secttion for more information.
Output of the tracking amplifier. If the tracking feature is used, this pin should be connected to FB pin through a resistor in series with a diode. The resistor value can be calculated from
minimize errors due to diode reverse current. For further information on compensation of the tracking amplifier refer to the application information
Provides for programming the undervoltage lockout level and serves as a shutdown input for the device.
Output voltage. This is the reference input to the current sense amplifier for current mode control and overcurrent protection.
6
TPS40100
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COMP
FB
MGU
MGD
ISNS
VO
GM
TPS40100
1
2
24
23
19
20
11
SS
Reference
Select
+
Current
Mirror
RT SYNC
7 22
Oscillator
+
0.725 V
0.711 V
0.690 V
0.669 V
0.655 V
+
+
FUNCTIONAL BLOCK DIAGRAM
UVLO
5
CLK
PWM
20 k
+
1.48 V
THERMSD
1.5 V
CLK
OC
1.33 V
10 µA
+
OC/SS
Controller
+
OC
FAULT
CLK
OC
FAULT
UVLO
Adaptive
Drive
Prebias
Control
Reference
Gate
and
Voltages
SLUS601–MAY 2005
15 BST
16 HDRV
17 SW
14 5VBP
13 LDRV
12 PGND
21 PG
TRKOUT
3
4TRKIN
+
6
ILIM
10
SS
9
GND
Housekeeping
8
BIAS
18 VDD
UDG04142
7
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TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION
Introduction
The TPS40100 is a synchronous buck controller targeted at applications that require sequencing and output voltage margining features. This controller uses a current feedback mechanism to make loop compensation easier for loads that can have wide capacitance variations. Current sensing (for both current feedback and overcurrent) is true differential and can be done using the inductor DC resistance (with a R-C filter) or with a separate sense resistor in series with the inductor. The overcurrent level is programmable independently from the amount of current feedback providing greater application flexibility. Likewise, the overcurrent function has user programmable integration to eliminate nuisance tripping and allow the user to tailor the response to application requirements. The controller provides an integrated method to margin the output voltage to ± 3% and ± 5% of its nominal value by simply grounding one of two pins directly or through a resistance. Powergood and clock synchronization functions are provided on dedicated pins. Users can program operating frequency and the closed loop soft-start time by means of a resistor and capacitor to ground respectively. Output se­quencing/tracking can be accomplished in one of three ways: sequential (one output comes up, then a second comes up), ratiometric (one or more outputs reach regulation at the same time – the voltages all follow a constant ration while starting) and simultaneous (one or more outputs track together on startup and reach regulation in order from lowest to highest).
Programming Operating Frequency
Operating frequency is set by connecting a resistor to GND from the RT pin. The relationship is:
ȡ
RT+
where
Figure 1 and Figure 2 show the relationship between the switching frequency and the RTresistor as described in Equation 1. The scaling is different between them to allow the user a more accurate views at both high and low
frequency.
* 3.98 10
ȧ
f
Ȣ
fSWis the switching frequency in kHz
R
SW
is in k
T
ȣ
4
2
ȧ Ȥ
)
5.14 10
ǒ
f
SW
4
Ǔ
* 8.6 (kW)
(1)
8
TPS40100
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APPLICATION INFORMATION (continued)
Timing Resistance k R
T
225
200
175
150
125
100
75
50
250
TIMING RESISTOR TIMING RESISTOR
SWITCHING FREQUENCY SWITCHING FREQUENCY
(250 kHz to 600 kHz) (100 kHz to 350 kHz)
350300 400 500450 600550
f
Switching Frequency kHz
SW
vs vs
Figure 1. Figure 2.
SLUS601–MAY 2005
550
500
450
400
350
300
250
Timing Resistance k
T
200
R
150
100
100
150 200 250 350300
f Switching Frequency kHz
Selecting an Inductor Value
The inductor value determines the ripple current in the output capacitors and has an effect on the achievable transient response. A large inductance decreases ripple current and output voltage ripple, but is physically larger than a smaller inductance at the same current rating and limits output current slew rate more that a smaller inductance would. A lower inductance increases ripple current and output voltage ripple, but is physically smaller than a larger inductance at the same current rating. For most applications, a good compromise is selecting an inductance value that gives a ripple current between 20% and 30% of the full load current of the converter. The required inductance for a given ripple current can be found from:
L +
ǒ
VIN* V
VIN fSW DI
OUT
Ǔ
V
OUT
(H)
(2)
where
L is the inductance value (H)
V
is the input voltage to the converter (V)
IN
V
f
•∆I is the peak-to-peak ripple current in the inductor (A)
is the output voltage of the converter (V)
OUT
is the switching frequency chosen for the converter (Hz)
SW
Selecting the Output Capacitance
The required value for the output capacitance depends on the output ripple voltage requirements and the ripple current in the inductor, as well as any load transient specifications that may exist.
The output voltage ripple depends directly on the ripple current and is affected by two parameters from the output capacitor: total capacitance and the capacitors equivalent series resistance (ESR). The output ripple voltage (worst case) can be found from:
9
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TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
DV + DI
ESR ) ǒ
ƪ
8 C
1
OUT
f
SW
Ǔ
(V)
ƫ
(3)
where
•∆V is the peak to peak output ripple voltage (V)
•∆I is the peak-to-peak ripple current in the inductor (A)
f
is the switching frequency chosen for the converter (Hz)
SW
C
ESR is the equivalent series resistance of the capacitor, C
is the capacitance value of the output capacitor (F)
OUT
OUT
()
For electrolytic capacitors, the output ripple voltage is almost entirely (90% or more) due to the ESR of the capacitor. When using ceramic output capacitors, the output ripple contribution from ESR is much smaller and the capacitance value itself becomes more significant. Paralleling output capacitors to achieve a desired output capacitance generally lowers the effective ESR more effectively than using a single larger capacitor. This increases performance at the expense of board area.
If there are load transient requirements that must be met, the overshoot and undershoot of the output voltage must be considered. If the load suddenly increases, the output voltage momentarily dips until the c urrent in the inductor can ramp up to match the new load requirement. If the feedback loop is designed aggressively, this undershoot can be minimized. For a given undershoot specification, the required output capacitance can be found by:
C
O(under)
+
2 V
UNDER
L I
D
STEP
ǒVIN* V
MAX
2
(F)
Ǔ
OUT
(4)
where
C
L is the inductor value (H)
I
STEP
V
D
V
V
is the output capacitance required to meet the undershoot specification (F)
O(under)
is the change in load current (A)
is the maximum allowable output voltage undershoot
UNDER
is the maximum duty cycle for the converter
MAX
is the input voltage
IN
is the output voltage
OUT
Similarly, if the load current suddenly goes from a high value to a low value, the output voltage overshoots. The ouput voltage rises until the current in the inductor drops to the new load current. The required capacitance for a given amount of overshoot can be found by:
C
O(over)
+
2 V
L I
OVER
STEP
V
2
OUT
(F)
(5)
where
C
L in the inductor value (H)
I
V
V
The required value of output capacitance is the maximum of C
is the output capacitance required to meet the undershoot specification (F)
O(over)
is the change in load current (A)
STEP
is the maximum allowable output voltage overshoot
OVER
is the output voltage
OUT
O(under)
and C
O(over)
.
Knowing the inductor ripple current, the switching frequency, the required load step and the allowable output voltage excursion allows calculation of the required output capacitance from a transient response perspective. The actual value and type of output capacitance is the one that satisfies both the ripple and transient specifications.
10
TPS40100
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SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
Calculating the Current Sense Filter Network
The TPS 40100 gets current feedback information by sensing the voltage across the inductor resistance, R order to do this, a filter must be constructed that allows the sensed voltage to be representative of the actual current in the inductor. This filter is a series R-C network connected across the inductor as shown in Figure 3.
V
IN
To ISNS pin
R
FLT
L
R
C
LDC
FLT
To VO pin
100
V
O
C
O
UDG04150
Figure 3. Current Sensing Filter Circuit
If the R
FLT-CFLT
voltage across R condition (100 nF is suggested). R
R
FLT
time constant is matched to the L/R
. It is recommended to keep R
+
LDC
L
R
C
LDC
* 100 (W)
FLT
can then be calculated.
FLT
time constant, the voltage across C
LDC
10 kor less. C
FLT
can be arbitrarily chosen to meet this
FLT
is equal to the
FLT
where
R
C
L is the output inductance (H)
R
When laying out the board, better performance can be accomplished by locating C
is the current sense filter resistance (Ω)
FLT
is the current sense filter capacitance (F)
FLT
is the DC resistance of the output inductor (Ω)
LDC
as close as possible to the
FLT
VO and ISNS pins. The closer the two resistors can be brought to the device the better as this reduces the length of high impedance runs that are susceptible to noise pickup. The 100-resistor from V
to the VO pin
OUT
of the device is to limit current in the event that the output voltage dips below ground when a short is applied to the output of the converter.
LDC
.In
(6)
Compensation for Inductor Resistance Change Over Temperature
The resistance in the inductor that is sensed is the resistance of the copper winding. This value changes over temperature and has approximately a 4000 ppm/°C temperature coefficient. The gain of current sense amplifier in the TPS40100 has a built in temperature coefficient of approximately -2000 ppm/°C. If the circuit is physically arranged so that there is good thermal coupling between the inductor and the device, the thermal shifts tend to offset. If the thermal coupling is perfect, the net temperature coefficient is 2000 ppm/°C. If the coupling is not perfect, the net temperature coefficient lies between 2000 ppm/°C and 4000 ppm/°C. For most applications this is sufficient. If desired, the temperature drifts can be compensated for. The following compensation scheme assumes that the temperature rise at the device is directly proportional to the temperature rise at the inductor. If this is not the case, compensation accuracy suffers. Also, there is generally a time lag in the temperature rise at the device vs. at the inductor that could introduce transient errors beyond those predicted by the compensation.
Also, the 100-resistor in Figure 3 is not shown. However, it is required if the output voltage can dip below ground during fault conditions. The calculations are not afffected, other than increasing the effective value of R by 100-Ω.
F1
11
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TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
The relative resistance change in the inductor is given by:
R
+ 1 ) TCL ǒTL* T
REL(L)
where
R
TCLis the temperature coefficient of copper, 4000 ppm/°C or 0.004
T
T
is the relative resistance of the inductor at TLcompared to the resistance at T
REL(L)
is the inductor copper temperature (°C)
L
is the reference temperature, typically lowest ambient (°C)
BASE
The relative gain of the current sense amplifier is given by a similar equation:
gm
+ 1 ) TCGM ǒTIC* T
(REL)
where
gm
TCGMis the temperature coefficient of the amplifier gain, -2000 ppm/°C or -0.002
T
T
is the relative gain of the amplifier at TICcompared to the gain at T
REL
is the device junction temperature (°C)
IC
is the reference temperature, typically lowest ambient (°C)
BASE
The temperature rise of the device can usually be related to the temperature rise of the inductor. The relationship between the two temperature rises can be approximated as a linear relationship in most cases:
TIC* T
BASE
+ǒTL* T
BASE
where
TICis the device junction temperature (°C)
T
T
k
is the reference temperature, typically lowest ambient (°C)
BASE
is the inductor copper temperature (°C)
L
is the constant that relates device temperature rise to the inductor temperature rise and must be
THM
determined experimentally for any given design
BASE
Ǔ
k
Ǔ
(dimensionless)
Ǔ
BASE
THM
(dimensionless)
(7)
BASE
(8)
BASE
(9)
With these assumptions, the effective inductor resistance over temperature is:
R
REL(eff)
R
REL(eff)
+ R
REL(L)
gm
+ƪ1 ) TC
REL
ǒ
TL* T
L
is the relative effective resistance that must be compensated for when doing the compensation. The
BASE
Ǔƫ
ƪ1 ) k
TCGM ǒTL* T
THM
BASE
Ǔƫ
(dimensionless)
circuit of Figure 4 shows a method of compensating for thermal shifts in current limit. The NTC thermistor (R must be well coupled to the inductor. C
should be located as close to the device as possible.
FLT
(10)
NTC
)
12
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