The TPS40100 is a mid voltage, wide-input (between
4.5 V and 18 V), synchronous, step-down controller.
The TPS40100 offers programmable closed loop
soft-start, programmable UVLO (with programmable
hysteresis), programmable inductor sensed current
limit and can be synchronized to other timebases.
The TPS40100 incorporates MOSFET gate drivers
for external N-channel high-side and synchronous
rectifier (SR) MOSFET. Gate drive logic incorporates
adaptive anti-cross conduction circuitry for improved
efficiency, reducing both cross conduction and diode
conduction in the rectifier MOSFET. The externally
programmablecurrentlimitprovidesahiccup
overcurrent recovery characteristic.
SLUS601–MAY 2005
TYPICAL APPLICATION
V
242223212019
PG
SS
VO
GM
VDD
ISNS
HDRV
5VBP
LDRV
PGND
SW
BST
18
17
16
15
14
13
COMP
1
2
3
V
V
IN
TRKIN
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
4
5
6
MGU
MGD
FB
TRKOUT
TRKIN
UVLO
ILIM
798101112
RT
TPS40100
BIAS
SYNC
GND
IN
UDG−04137
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
(1) The QFN package (RGE) is available taped and reeled only. Use
large reel device type R (TPS40100RGER) to order quantities of
3,000 per reel. Use small reel device type T (TPS40100RGET) to
order quantities of 250 per reel.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) BST to SW and HDRV to SW are relative measurements. BST and HDRV can be this amount of voltage above or below the voltage at
SW.
(3) V5BP current includes gate drive current requirements. Observe maximum TJrating for the device.
(2)
(1)
(1)
TPS40100UNIT
-0.3 to 6
-0.3 to 6.0
VIN
A
(3)
°C
2
TPS40100
www.ti.com
SLUS601–MAY 2005
ELECTRICAL CHARACTERISTICS
-40°C ≤ TA=TJ≤ 85°C, V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT VOLTAGE
V
VDD
OPERATING CURRENT
I
DD
I
SD
5VPB
OSCILLATOR/RAMP GENERATOR
f
SW
V
RAMP
t
OFF
D
MIN
t
MIN
V
VLY
FREQUENCY SYNCHRONIZATION
V
IH
V
IL
I
SYNC
t
SYNC
t
SYNC_SH
SOFT-START AND FAULT IDLE
I
SS
I
SS_SINK
V
SSC
V
SSD
V
SSOS
ERROR AMPLIFIER
GBWPGain bandwidth product
AVOLOpen loop6080dB
I
BIAS
I
OH
I
OL
FEEDBACK REFERENCE
V
FB
(1) Ensured by design. Not production tested.
(2) To meet set up time requirements for the synchronization circuit, a negative logic pulse must be greater than 100 ns wide.
(3) Margining delay time is the time delay from an assertion of a margining command until the output voltage begins to transition to the
margined voltage.
(4) Ensured by design. Not production tested.
Feedback voltage margin 5% upV
Feedback voltage margin 3% up2 V ≤ V
Margin-up bias current6080100µA
Feedback voltage margin 5% downV
Feedback voltage margin 3% down2 V ≤ V
Margin-down bias current6080100µA
Margining delay time
Margining transition time1.57.0
Current sense amplifier gainTJ=25°C300333365µS
Amplifier gain temperature coefficient-2000ppm/°C
Gm linear range voltageTJ=25°C-5050mV
Bias current at ISNS pinVVO=V
Input voltage common modeV
ILIM pin voltage to trip overcurrent1.441.481.52V
Current limit comparator propagation delayHDRV transition from on to off70140ns
HIgh-side driver rise time
HIgh-side driver fall time
HIgh-side driver peak source current
HIgh-side driver source current at 2.5 V
HIgh-side driver peak sink current
High-side driver sink current at 2.5 V
HIgh-side driver pullup resistanceI
HIgh-side driver pulldown resistanceI
Low-side driver rise time
Low-side driver fall time
Low-side driver peak source current
Low-side driver source current at 2.5 V
Low-side driver peak sink current
Low-side driver sink current at 2.5 V
Low-side driver pullup resistanceI
Low-side driver pulldown resistanceI
Leakage current from SW pin-11µA
Powergood low voltageI
Powergood delay time152535µs
Powergood low voltage , no device power1.001.25V
Power good overvoltage threshold, V
Power good undervoltage threshold, V
=12V,RRT= 182 kΩ,RGM= 232 kΩ,R
VDD
MGU
MGD
(3)
4.5 V ≤ VIN≤ 5.5 V03.6
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
FB
FB
C
LOAD
C
LOAD
(4)
V
HDRV-VSW
V
HDRV-VSW
HDRV
HDRV
C
LOAD
C
LOAD
V
LDRV
V
LDRV
LDRV
LDRV
PGD
V
VDD
5-V supply
= 121 kΩ (unless otherwise noted)
ILIM
≤ 500 mV715725735
≤ 3 V700711720
MGU
≤ 500 mV645655665
≤ 3 V660669680
MGD
1230
= 3.3 V250nA
ISNS
06
= 4.7 nF57
= 4.7 nF47
800
= 2.5 V700
1.3
= 2.5 V1.2
= 300 mA2.44.0
= 300 mA1.01.8
= 4.7 nF57
= 4.7 nF47
800
= 2.5 V700
1.3
= 2.5 V1.2
= 300 mA2.04.0
= 300 mA0.81.5
= 2 mA30100mV
= OPEN, 10-kΩ pullup to external
765
615
mV
mA
ms
ns
mA
A
Ω
ns
mA
A
Ω
mV
4
TPS40100
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
-40°C ≤ TA=TJ≤ 85°C, V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
TRACKING AMPLIFIER
V
TRKOS
V
TRKCM
V
TRK
V
HTKROUT
V
LTKROUT
I
SRCTRKOUT
I
SNKTRKOUT
V
TRKDIF
GBWP
AVOL
PROGRAMMABLE UVLO
V
UVLO
I
UVLO
INTERNALLY FIXED UVLO
V
UVLOFON
V
UVLOFOFF
V
UVLOHYST
THERMAL SHUTDOWN
T
SD
T
SDHYST
Tracking amplifier input offset voltagemV
Input common mode, active range06
Tracking amplifier voltage range
High-level output voltage, TRKOUT
Low-level output voltage, TRKOUT00.5
Source current, TRKOUT0.652.00
Sink current, TRKOUT12
Differential voltage from TRKIN to VO18V
Tracking amplifier gain bandwidth product
TRK
Tracking amplifier open loop DC gain
TRK
Undervoltage lockout threshold1.2851.332 1.378V
Hysteresis current9.010.010.8µA
Fixed UVLO turn-on voltage at VDD pin-40°C ≤ TA< 125°C3.850 4.1504.425
Fixed UVLO turn-off voltage at VDD pin3.754.064.35
UVLO hysteresis at VDD pin85mV
Thermal shutdown temerature
Hysteresis
=12V,RRT= 182 kΩ,RGM= 232 kΩ,R
VDD
(6)
(6)
(6)
(6)
V
TRKOS=VTRKIN-VO;VVO
V
TRKOS=VTRKIN-VO
4.5 V ≤ V
5V<V
V
VDD
V
VDD
SLUS601–MAY 2005
= 121 kΩ (unless otherwise noted)
ILIM
≤ 2V72540
;2V<VVO≤ 6 V-52540
≤ 5.5 V03.6
VDD
VDD
≤ 18 V
(5)
06
= 12 V5.06.58.0
= 4.5 V3.23.6
1MHz
60dB
130165
25
V
mA
V
°C
(5) Amplifier can track to the lesser of 6 V or (VDD× 0.95)
(6) Ensured by design. Not production tested.
DEVICE INFORMATION
MGU
MGD
SYNC
PG
VO
ISNS
24
23
22
21
20
19
RGE PACKAGE
(BOTTOM VIEW)
COMPFBTRKOUT
TRKIN
UVLO
123456
18 17 16 15 14 13
VDD
SW
BST
HDRV
5VBP
ILIM
7
8
9
10
11
12
LDRV
RT
BIAS
GND
SS
GM
PGND
5
www.ti.com
TPS40100
SLUS601–MAY 2005
DEVICE INFORMATION (continued)
TERMINAL FUNCTIONS
TERMINAL
NAMENO.
5VBP14Opin to PGND. Power for external circuitry may be drawn from this pin. The total gate drive
BIAS8O
BST15Iconnected from 5VBP (A) to BST(K). A schottky diode is recommended for this purpose. A
COMP1O
FB2I
GM11IConnect a resistor from this pin to GND to set the gain of the current sense amplifier.
GND9-
HDRV16OFloating gate drive for the high side N-channel MOSFET.
ILIM6Oconnected from this pin to GND. When this voltage reaches 1.48 V, an overcurrent condition
ISNS19I
LDRV13OGate drive for the N-channel synchronous rectifier.
MGD23I10 kΩ, the output voltage is decreased by 5%. The 3% margin down at the output voltage is
MGU24IkΩ, the output voltage is increased by 5%. The 3% margin up at the output voltage is
PG21OFB pin is more than 10% higher or lower than 690 mV, a UVLO condition exists, soft-start is
PGND12-Power ground for internal drivers
RT7IA resistor connected from this pin to GND sets operating frequency.
SS10I
SW17I
SYNC22Isynchronize the oscillator frequency to an external master clock. This pin may be left floating
TRKIN4Itracks TRKIN voltage with a small controlled offset (typically 25 mV) when the tracking
TRKOUT3Othe equivalent impedance at the FB node. The diode should be a low leakage type to
UVLO5I
VDD18ISupply voltage for the device.
VO20I
I/ODESCRIPTION
Output of an internal 5-V regulator. A 1-µF bypass capacitor should be connected from this
current and external current draw should not cause the device to exceed thermal capabilities
The bypassed supply for internal device circuitry. Connect a 0.1-µF or greater ceramic
capacitor from this pin to GND.
Gate drive voltage for the high-side N-channel MOSFET. An external diode must be
capacitor must be connected from this pin to the SW pin.
Output of the error amplifier. A feedback network is connected from this pin to the FB pin for
control loop compensation.
Inverting input to the error amplifier. In normal operation the voltage on this pin is equal to
the internal reference voltage (approximately 690 mV).
Low power or signal ground for the device. All signal level circuits should be referenced to
this pin unless otherwise noted.
Current limit pin used to set the overcurrent threshold and transient ride out time. An internal
current source that is proportional to the inductor current sets a voltage on a resistor
is declared by the device. Adding a capacitor in parallel with the resistor to GND sets a time
delay that can be used to help avoid nuisance trips.
Input from the inductor DCR sensing network. This input signal is one of the inputs to the
current sense amplifier for current feedback control and overcurrent protection
Margin down pin used for load stress test. When this pin is pulled to GND through less than
accommodated when this pin is connected to GND through a 30-kΩ resistor.
Margin up pin used for load stress test. When this pin is pulled to GND through less than 10
accommodated when this pin is connected to GND through a 30-kΩ resistor.
Open drain power good output for the device. This pin is pulled low when the voltage at the
active, tracking is active, an overcurrent condition exists or the die is over temperature.
Soft-start programming pin. A capacitor connected from this pin to ground programs the
soft-start time. This pin is also used as a time out function during an overcurrent event.
Connected to the switched node of the converter. This pin is the return line for the flying high
side driver.
Rising edge triggered synchronization input for the device. This pin can be used to
or grounded if the function is not used.
Control input allowing simultaneous startup of multiple controllers. The converter output
amplifier is used. See application secttion for more information.
Output of the tracking amplifier. If the tracking feature is used, this pin should be connected
to FB pin through a resistor in series with a diode. The resistor value can be calculated from
minimize errors due to diode reverse current. For further information on compensation of the
tracking amplifier refer to the application information
Provides for programming the undervoltage lockout level and serves as a shutdown input for
the device.
Output voltage. This is the reference input to the current sense amplifier for current mode
control and overcurrent protection.
6
TPS40100
www.ti.com
COMP
FB
MGU
MGD
ISNS
VO
GM
TPS40100
1
2
24
23
19
20
11
SS
Reference
Select
+
Current
Mirror
RTSYNC
722
Oscillator
+
0.725 V
0.711 V
0.690 V
0.669 V
0.655 V
+
+
FUNCTIONAL BLOCK DIAGRAM
UVLO
5
CLK
PWM
20 kΩ
+
1.48 V
THERMSD
1.5 V
CLK
OC
1.33 V
10 µA
+
OC/SS
Controller
+
OC
FAULT
CLK
OC
FAULT
UVLO
Adaptive
Drive
Prebias
Control
Reference
Gate
and
Voltages
SLUS601–MAY 2005
15 BST
16 HDRV
17 SW
14 5VBP
13 LDRV
12 PGND
21 PG
TRKOUT
3
4TRKIN
+
6
ILIM
10
SS
9
GND
Housekeeping
8
BIAS
18 VDD
UDG−04142
7
www.ti.com
TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION
Introduction
The TPS40100 is a synchronous buck controller targeted at applications that require sequencing and output
voltage margining features. This controller uses a current feedback mechanism to make loop compensation
easier for loads that can have wide capacitance variations. Current sensing (for both current feedback and
overcurrent) is true differential and can be done using the inductor DC resistance (with a R-C filter) or with a
separate sense resistor in series with the inductor. The overcurrent level is programmable independently from
the amount of current feedback providing greater application flexibility. Likewise, the overcurrent function has
user programmable integration to eliminate nuisance tripping and allow the user to tailor the response to
application requirements. The controller provides an integrated method to margin the output voltage to ± 3% and
± 5% of its nominal value by simply grounding one of two pins directly or through a resistance. Powergood and
clock synchronization functions are provided on dedicated pins. Users can program operating frequency and the
closed loop soft-start time by means of a resistor and capacitor to ground respectively. Output sequencing/tracking can be accomplished in one of three ways: sequential (one output comes up, then a second
comes up), ratiometric (one or more outputs reach regulation at the same time – the voltages all follow a
constant ration while starting) and simultaneous (one or more outputs track together on startup and reach
regulation in order from lowest to highest).
Programming Operating Frequency
Operating frequency is set by connecting a resistor to GND from the RT pin. The relationship is:
ȡ
RT+
where
Figure 1 and Figure 2 show the relationship between the switching frequency and the RTresistor as described in
Equation 1. The scaling is different between them to allow the user a more accurate views at both high and low
frequency.
* 3.98 10
ȧ
f
Ȣ
•fSWis the switching frequency in kHz
•R
SW
is in kΩ
T
ȣ
4
2
ȧ
Ȥ
)
5.14 10
ǒ
f
SW
4
Ǔ
* 8.6 (kW)
(1)
8
TPS40100
www.ti.com
APPLICATION INFORMATION (continued)
− Timing Resistance − kΩ
R
T
225
200
175
150
125
100
75
50
250
TIMING RESISTORTIMING RESISTOR
SWITCHING FREQUENCYSWITCHING FREQUENCY
(250 kHz to 600 kHz)(100 kHz to 350 kHz)
350300400500450600550
f
− Switching Frequency − kHz
SW
vsvs
Figure 1.Figure 2.
SLUS601–MAY 2005
550
500
450
400
350
300
250
− Timing Resistance − kΩ
T
200
R
150
100
100
150200250350300
f − Switching Frequency − kHz
Selecting an Inductor Value
The inductor value determines the ripple current in the output capacitors and has an effect on the achievable
transient response. A large inductance decreases ripple current and output voltage ripple, but is physically larger
than a smaller inductance at the same current rating and limits output current slew rate more that a smaller
inductance would. A lower inductance increases ripple current and output voltage ripple, but is physically smaller
than a larger inductance at the same current rating. For most applications, a good compromise is selecting an
inductance value that gives a ripple current between 20% and 30% of the full load current of the converter. The
required inductance for a given ripple current can be found from:
L +
ǒ
VIN* V
VIN fSW DI
OUT
Ǔ
V
OUT
(H)
(2)
where
•L is the inductance value (H)
•V
is the input voltage to the converter (V)
IN
•V
•f
•∆I is the peak-to-peak ripple current in the inductor (A)
is the output voltage of the converter (V)
OUT
is the switching frequency chosen for the converter (Hz)
SW
Selecting the Output Capacitance
The required value for the output capacitance depends on the output ripple voltage requirements and the ripple
current in the inductor, as well as any load transient specifications that may exist.
The output voltage ripple depends directly on the ripple current and is affected by two parameters from the
output capacitor: total capacitance and the capacitors equivalent series resistance (ESR). The output ripple
voltage (worst case) can be found from:
9
www.ti.com
TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
DV + DI
ESR ) ǒ
ƪ
8 C
1
OUT
f
SW
Ǔ
(V)
ƫ
(3)
where
•∆V is the peak to peak output ripple voltage (V)
•∆I is the peak-to-peak ripple current in the inductor (A)
•f
is the switching frequency chosen for the converter (Hz)
SW
•C
•ESR is the equivalent series resistance of the capacitor, C
is the capacitance value of the output capacitor (F)
OUT
OUT
(Ω)
For electrolytic capacitors, the output ripple voltage is almost entirely (90% or more) due to the ESR of the
capacitor. When using ceramic output capacitors, the output ripple contribution from ESR is much smaller and
the capacitance value itself becomes more significant. Paralleling output capacitors to achieve a desired output
capacitance generally lowers the effective ESR more effectively than using a single larger capacitor. This
increases performance at the expense of board area.
If there are load transient requirements that must be met, the overshoot and undershoot of the output voltage
must be considered. If the load suddenly increases, the output voltage momentarily dips until the c urrent in the
inductor can ramp up to match the new load requirement. If the feedback loop is designed aggressively, this
undershoot can be minimized. For a given undershoot specification, the required output capacitance can be
found by:
C
O(under)
+
2 V
UNDER
L I
D
STEP
ǒVIN* V
MAX
2
(F)
Ǔ
OUT
(4)
where
•C
•L is the inductor value (H)
•I
STEP
•V
•D
•V
•V
is the output capacitance required to meet the undershoot specification (F)
O(under)
is the change in load current (A)
is the maximum allowable output voltage undershoot
UNDER
is the maximum duty cycle for the converter
MAX
is the input voltage
IN
is the output voltage
OUT
Similarly, if the load current suddenly goes from a high value to a low value, the output voltage overshoots. The
ouput voltage rises until the current in the inductor drops to the new load current. The required capacitance for a
given amount of overshoot can be found by:
C
O(over)
+
2 V
L I
OVER
STEP
V
2
OUT
(F)
(5)
where
•C
•L in the inductor value (H)
•I
•V
•V
The required value of output capacitance is the maximum of C
is the output capacitance required to meet the undershoot specification (F)
O(over)
is the change in load current (A)
STEP
is the maximum allowable output voltage overshoot
OVER
is the output voltage
OUT
O(under)
and C
O(over)
.
Knowing the inductor ripple current, the switching frequency, the required load step and the allowable output
voltage excursion allows calculation of the required output capacitance from a transient response perspective.
The actual value and type of output capacitance is the one that satisfies both the ripple and transient
specifications.
10
TPS40100
www.ti.com
SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
Calculating the Current Sense Filter Network
The TPS 40100 gets current feedback information by sensing the voltage across the inductor resistance, R
order to do this, a filter must be constructed that allows the sensed voltage to be representative of the actual
current in the inductor. This filter is a series R-C network connected across the inductor as shown in Figure 3.
V
IN
To ISNS pin
R
FLT
L
R
C
LDC
FLT
To VO pin
100 Ω
V
O
C
O
UDG−04150
Figure 3. Current Sensing Filter Circuit
If the R
FLT-CFLT
voltage across R
condition (100 nF is suggested). R
R
FLT
time constant is matched to the L/R
. It is recommended to keep R
+
LDC
L
R
C
LDC
* 100 (W)
FLT
can then be calculated.
FLT
time constant, the voltage across C
LDC
10 kΩ or less. C
FLT
can be arbitrarily chosen to meet this
FLT
is equal to the
FLT
where
•R
•C
•L is the output inductance (H)
•R
When laying out the board, better performance can be accomplished by locating C
is the current sense filter resistance (Ω)
FLT
is the current sense filter capacitance (F)
FLT
is the DC resistance of the output inductor (Ω)
LDC
as close as possible to the
FLT
VO and ISNS pins. The closer the two resistors can be brought to the device the better as this reduces the
length of high impedance runs that are susceptible to noise pickup. The 100-Ω resistor from V
to the VO pin
OUT
of the device is to limit current in the event that the output voltage dips below ground when a short is applied to
the output of the converter.
LDC
.In
(6)
Compensation for Inductor Resistance Change Over Temperature
The resistance in the inductor that is sensed is the resistance of the copper winding. This value changes over
temperature and has approximately a 4000 ppm/°C temperature coefficient. The gain of current sense amplifier
in the TPS40100 has a built in temperature coefficient of approximately -2000 ppm/°C. If the circuit is physically
arranged so that there is good thermal coupling between the inductor and the device, the thermal shifts tend to
offset. If the thermal coupling is perfect, the net temperature coefficient is 2000 ppm/°C. If the coupling is not
perfect, the net temperature coefficient lies between 2000 ppm/°C and 4000 ppm/°C. For most applications this is
sufficient. If desired, the temperature drifts can be compensated for. The following compensation scheme
assumes that the temperature rise at the device is directly proportional to the temperature rise at the inductor. If
this is not the case, compensation accuracy suffers. Also, there is generally a time lag in the temperature rise at
the device vs. at the inductor that could introduce transient errors beyond those predicted by the compensation.
Also, the 100-Ω resistor in Figure 3 is not shown. However, it is required if the output voltage can dip below
ground during fault conditions. The calculations are not afffected, other than increasing the effective value of R
by 100-Ω.
F1
11
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TPS40100
SLUS601–MAY 2005
APPLICATION INFORMATION (continued)
The relative resistance change in the inductor is given by:
R
+ 1 ) TCL ǒTL* T
REL(L)
where
•R
•TCLis the temperature coefficient of copper, 4000 ppm/°C or 0.004
•T
•T
is the relative resistance of the inductor at TLcompared to the resistance at T
REL(L)
is the inductor copper temperature (°C)
L
is the reference temperature, typically lowest ambient (°C)
BASE
The relative gain of the current sense amplifier is given by a similar equation:
gm
+ 1 ) TCGM ǒTIC* T
(REL)
where
•gm
•TCGMis the temperature coefficient of the amplifier gain, -2000 ppm/°C or -0.002
•T
•T
is the relative gain of the amplifier at TICcompared to the gain at T
REL
is the device junction temperature (°C)
IC
is the reference temperature, typically lowest ambient (°C)
BASE
The temperature rise of the device can usually be related to the temperature rise of the inductor. The relationship
between the two temperature rises can be approximated as a linear relationship in most cases:
TIC* T
BASE
+ǒTL* T
BASE
where
•TICis the device junction temperature (°C)
•T
•T
•k
is the reference temperature, typically lowest ambient (°C)
BASE
is the inductor copper temperature (°C)
L
is the constant that relates device temperature rise to the inductor temperature rise and must be
THM
determined experimentally for any given design
BASE
Ǔ
k
Ǔ
(dimensionless)
Ǔ
BASE
THM
(dimensionless)
(7)
BASE
(8)
BASE
(9)
With these assumptions, the effective inductor resistance over temperature is:
R
REL(eff)
R
REL(eff)
+ R
REL(L)
gm
+ƪ1 ) TC
REL
ǒ
TL* T
L
is the relative effective resistance that must be compensated for when doing the compensation. The
BASE
Ǔƫ
ƪ1 ) k
TCGM ǒTL* T
THM
BASE
Ǔƫ
(dimensionless)
circuit of Figure 4 shows a method of compensating for thermal shifts in current limit. The NTC thermistor (R
must be well coupled to the inductor. C
should be located as close to the device as possible.
FLT
(10)
NTC
)
12
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