Texas Instruments TPS3890-Q1 Datasheet

Temperature (qC)

Accuracy (%)

-50 -25 0 25 50 75 100 125

-0.75

-0.5

-0.25

0

0.25

0.5

0.75

D001

Unit 1
Unit 2

Unit 3
Unit 4

Unit 5
Avg

TPS389012-Q1

RESET

VDD

GND

SENSE

1.8 V

Microcontroller

MR

1.2 V

V

CORE

V

I/O

RESET

C

T

GND

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TPS3890-Q1

SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

TPS3890-Q1

Low Quiescent Current, 1% Accurate Supervisor with Programmable Delay

1 Features

1

• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: -40°C to 125°C

Ambient Operating Temperature Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C4B

• Power-On-Reset (POR) Generator with Adjustable
Delay Time: 25 μs to 30 s

• Very Low Supply Current: 2.1 μA (Typical)

• High Threshold Accuracy: 1% (max)

• Precision Hysteresis

• Fixed and Adjustable Threshold Voltages:
– Fixed Thresholds for Standard Rails:

1.2 V to 5 V

– Adjustable Down to 1.15 V

• Manual Reset (MR) Input

• Open-Drain RESET Output

• Temperature Range: –40°C to +125°C

• Package: 1.5-mm × 1.5-mm WSON

2 Applications

• Infotainment Head Unit

• Hybrid/Digital Cluster

• External Amplifier

• ADAS Camera

• Automotive Gateway

Typical Application Circuit

3 Description

The TPS3890-Q1 is a precision voltage supervisor
with low-quiescent current that monitors system
voltages as low as 1.15 V, asserting an open-drain
RESET signal when the SENSE voltage drops below
a preset threshold or when the manual reset (MR) pin
drops to a logic low. The RESET output remains low
for the user-adjustable delay time after the SENSE
voltage and manual reset (MR) return above the
respective thresholds. The TPS3890-Q1 family uses
a precision reference to achieve 1% threshold
accuracy. The reset delay time can be user-adjusted
between 25 μs and 30 s by connecting the CT pin to
an external capacitor. The TPS3890-Q1 has a very
low quiescent current of 2.1 μA and is available in a
small 1.5-mm × 1.5-mm package, making the device
well-suited for battery-powered and space­constrained applications. The device is fully specified
over a temperature range of –40°C to +125°C (TJ).

Device Information

PART NUMBER PACKAGE BODY SIZE (NOM)

TPS3890-Q1 WSON (6) 1.50 mm × 1.50 mm
(1) For all available packages, see the orderable addendum at

the end of the data sheet.

SPACE
SPACE
SPACE
SPACE
SPACE
SPACE
SPACE

V

Accuracy vs Temperature

ITN

(1)

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

TPS3890-Q1

SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

www.ti.com

Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description ............................................................. 1

4 Revision History..................................................... 2

5 Device Comparison Table..................................... 3

6 Pin Configuration and Functions......................... 3

7 Specifications......................................................... 4

7.1 Absolute Maximum Ratings...................................... 4

7.2 ESD Ratings ............................................................ 4

7.3 Recommended Operating Conditions....................... 4

7.4 Thermal Information.................................................. 4

7.5 Electrical Characteristics........................................... 5

7.6 Timing Requirements................................................ 5

7.7 Typical Characteristics.............................................. 7

8 Detailed Description............................................ 11

8.1 Overview................................................................. 11

8.2 Functional Block Diagram....................................... 11

8.3 Feature Description................................................. 11

8.4 Device Functional Modes........................................ 14

9 Application and Implementation ........................ 15

9.1 Application Information............................................ 15

9.2 Typical Application ................................................. 15

10 Power Supply Recommendations ..................... 16

11 Layout................................................................... 17

11.1 Layout Guidelines ................................................. 17

11.2 Layout Example .................................................... 17

12 Device and Documentation Support................. 18

12.1 Device Support .................................................... 18

12.2 Documentation Support ....................................... 18

12.3 Receiving Notification of Documentation Updates 18

12.4 Community Resources.......................................... 18

12.5 Trademarks........................................................... 19

12.6 Electrostatic Discharge Caution............................ 19

12.7 Glossary................................................................ 19

13 Mechanical, Packaging, and Orderable

Information........................................................... 19

4 Revision History

Changes from Revision A (October 2017) to Revision B Page

• Added Automotive features ................................................................................................................................................... 1

• Added new voltage options to Device Comparison Table...................................................................................................... 3

Changes from Original (March 2017) to Revision A Page

• Added TPS389050L-Q1 to Device Comparison Table .......................................................................................................... 3

2

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1SENSE

2GND

3MR 4 VDD

5 CT

6 RESET

Not to scale

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5 Device Comparison Table

TPS3890-Q1

SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

PART NUMBER NOMINAL SUPPLY VOLTAGE NEGATIVE THRESHOLD (V

TPS389001-Q1 Adjustable 1.15 V 1.157 V
TPS389012-Q1 1.2 V 1.15 V 1.157 V
TPS389015-Q1 1.5 V 1.44 V 1.449 V
TPS389018-Q1 1.8 V 1.73 V 1.740 V
TPS389025-Q1 2.5 V 2.40 V 2.414 V
TPS389030-Q1 3.0 V 2.89 V 2.907 V

TPS389033-Q1 3.3 V 3.17 V 3.189 V
TPS389033G-Q1 3.3 V 3.06 V 3.084 V
TPS389033K-Q1 3.3 V 2.93 V 2.947 V

TPS389050-Q1 5.0 V 4.80 V 4.828 V
TPS389050G-Q1 5.0 V 4.65 V 4.677 V

TPS389050L-Q1 5.0 V 4.40 V 4.425 V

6 Pin Configuration and Functions

DSE Package

6-Pin WSON

Top View

) POSITIVE THRESHOLD (V

ITN

ITP

)

Pin Functions

PIN

NO. NAME

1 SENSE I

2 GND — Ground
3 MR I Driving the manual reset pin (MR) low causes RESET to go low (assert).
4 VDD I Supply voltage pin. Good analog design practice is to place a 0.1-µF ceramic capacitor close to this pin.

5 CT —

6 RESET O

I/O DESCRIPTION

This pin is connected to the voltage to be monitored. When the voltage on SENSE falls below the
negative threshold voltage V
positive threshold voltage V

, RESET goes low (asserts). When the voltage on SENSE rises above the

ITN

, RESET goes high (deasserts).

ITP

The CT pin offers a user-adjustable delay time. Connecting this pin to a ground-referenced capacitor sets
the RESET delay time to deassert. t

(sec) = CCT(µF) × 1.07 + 25 µs (nom).

PD(r)

RESET is an open-drain output that is driven to a low-impedance state when either the MR pin is driven to
a logic low or the monitored voltage on the SENSE pin is lower than the negative threshold voltage (V
RESET remains low (asserted) for the delay time period after both MR is set to a logic high and the
SENSE input is above V

. A pullup resistor from 10 kΩ to 1 MΩ should be used on this pin.

ITP

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ITN

).

3

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SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

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7 Specifications

7.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

VDD –0.3 7
SENSE –0.3 7

Voltage

RESET –0.3 7
MR –0.3 7
V

CT

Current RESET –20 20 mA

Operating junction, T

Temperature

Storage, T

stg

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

V

(ESD)

Electrostatic discharge

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

Human-body model (HBM), per AEC Q100-002
Charged-device model (CDM), per AEC Q100-011 ±750

(1)

MIN MAX UNIT

V

–0.3 7

J

A

–40 125
–40 125

°COperating ambient, T

–65 150

VALUE UNIT

(1)

±2000

V

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN NOM MAX UNIT

V

DD

V

SENSE

V

RESET

I

RESET

C

IN

C

CT

R

PU

T

J

Power-supply voltage 1.5 5.5 V
SENSE voltage 0 5.5 V
RESET pin voltage 0 5.5 V
RESET pin current –5 5 mA
Input capacitor, VDD pin 0 0.1 µF
Reset timeout capacitor, CT pin 0 26 µF
Pullup resistor, RESET pin 1 1000 kΩ
Junction temperature (free-air temperature) –40 25 125 ℃

7.4 Thermal Information

TPS3890-Q1

THERMAL METRIC

R

θJA

R

θJC(top)

R

θJB

ψ

JT

ψ

JB

R

θJC(bot)

Junction-to-ambient thermal resistance 321.3 °C/W
Junction-to-case (top) thermal resistance 207.9 °C/W
Junction-to-board thermal resistance 281.5 °C/W
Junction-to-top characterization parameter 42.4 °C/W
Junction-to-board characterization parameter 284.8 °C/W
Junction-to-case (bottom) thermal resistance 142.3 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(1)

UNITDSE (WSON)

6 PINS

4

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SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

7.5 Electrical Characteristics

over the operating junction temperature range of –40°C to +125°C (TA= TJ), 1.5 V ≤ VDD≤ 5.5 V, and MR = VDD(unless
otherwise noted); typical values are at VDD= 5.5 V and TJ= 25°C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

DD

V

POR

I

DD

V

ITN

V

HYST

I

SENSE

I

CT

V

CT

R

CT

V

IL

V

IH

V

OL

I

LKG(OD)

(1) V

, V

Input supply voltage 1.5 5.5 V
Power-on-reset voltage V

Supply current (into VDD pin)

SENSE input threshold voltage

ITP

accuracy
Hysteresis

(1)

Input current

VDD= 3.3 V, I
–40°C < TJ< 85°C

VDD= 3.3 V, I
–40°C < TJ< 105°C

VDD= 3.3 V, I
VDD= 5.5 V, I

–40°C < TJ< 85°C
VDD= 5.5 V, I

–40°C < TJ< 105°C
VDD= 5.5 V, I

V
V

TPS389012-Q1

OL(max)

= 0.2 V, I

RESET

RESET

RESET

RESET

RESET

RESET

= 15 µA 0.8 V

RESET

= 0 mA,

2.09 3.72

= 0 mA,

= 0 mA 5.8

= 0 mA,

2.29 4

= 0 mA,

= 0 mA 6.5

–1% ±0.5% 1%

0.325% 0.575% 0.825%

= 5 V 8 µA

SENSE

= 5 V, TPS389001-Q1,

SENSE

10 100 nA

CT pin charge current 0.90 1.15 1.35 µA
CT pin comparator threshold voltage 1.17 1.23 1.29 V
CT pin pulldown resistance When RESET is deasserted 200 Ω
Low-level input voltage (MR pin) 0.25 × V
High-level output voltage 0.7 x V

Low-level output voltage

Open-drain output leakage

= [(V

HYST

ITP

– V

ITN

) / V

] × 100%.

ITN

VDD≥ 1.5 V, I

VDD≥ 4.5 V, I
High impedance,

V

= V

SENSE

RESET

= 0.4 mA 0.25

RESET

= 2 mA 0.25

RESET

= 3 mA 0.3

RESET

= 5.5 V

DD

4.5

5.2

DD

250 nA

µA

V
V

VVDD≥ 2.7 V, I

7.6 Timing Requirements

over the operating junction temperature range of –40°C to +125°C (TA= TJ), 1.5 V ≤ VDD≤ 5.5 V, MR = VDD, and 5% input
overdrive

t

PD(f)

t

PD(r)

t

GI(SENSE)

t

GI(MR)

t

MRW

t

d(MR)

t

STRT

(1) Overdrive = | (VIN/ V

(1)

(unless otherwise noted); typical values are at VDD= 5.5 V and TJ= 25°C

MIN NOM MAX UNIT

SENSE (falling) to RESET propagation delay

CT= open, VDD= 3.3 V 18

CT= open, VDD= 5.5 V 8
SENSE (rising) to RESET propagation delay CT= open, VDD= 3.3 V 25 µs
SENSE pin glitch immunity VDD= 5.5 V 9 µs
MR pin glitch immunity VDD= 5.5 V 100 ns
MR pin pulse duration to assert RESET 1 µs
MR pin low to out delay 250 ns
Startup delay 325 µs

– 1) × 100% |.

THRESH

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µs

5

Time

0.8 V

V

ITP

V

ITN

0.7 V

DD

0.3 V

DD

MR

SENSE

RESET

V

DD

t

PD(r)

t

PD(f)

t

PD(r)

t

PD(r)

=SENSE Rising Propagation Delay

= Undefined State

t

d(MR)

=SENSE Falling Propagation Delay

t

PD(f)

TPS3890-Q1

SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

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Figure 1. Timing Diagram

6

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Temperature (qC)

CT Current (PA)

-50 -25 0 25 50 75 100 125

1

1.05

1.1

1.15

1.2

D005

1.5 V

5.5 V

Hysteresis (%)

Frequency (%)

0

3

6

9

12

15

0.47 0.51 0.55 0.59 0.63 0.67

V

ITN

Accuracy (%)

Frequency (%)

0

2

4

6

8

10

12

-0.25 -0.15 -0.05 0.05 0.15 0.25

V

ITP

Accuracy (%)

Frequency (%)

0

2

4

6

8

10

12

-0.25 -0.15 -0.05 0.05 0.15 0.25

Temperature (qC)

Accuracy (%)

-50 -25 0 25 50 75 100 125

-0.75

-0.5

-0.25

0

0.25

0.5

0.75

D001

Unit 1
Unit 2

Unit 3
Unit 4

Unit 5
Avg

Temperature (qC)

Accuracy (%)

-50 -25 0 25 50 75 100 125

-0.75

-0.5

-0.25

0

0.25

0.5

0.75

D002

Unit 1
Unit 2

Unit 3
Unit 4

Unit 5
Avg

TPS3890-Q1

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SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

7.7 Typical Characteristics

over the operating junction temperature range of –40°C to +125°C, 1.5 V ≤ VDD≤ 5.5 V, and MR = VDD(unless otherwise
noted)

Figure 2. V

Accuracy vs Temperature Figure 3. V

ITN

Tested at VDD= 1.5 V and VDD= 5.5 V, total tests = 136,348

Figure 4. V

Accuracy Histogram

ITN

Accuracy vs Temperature

ITP

Tested at VDD= 1.5 V and VDD= 5.5 V, total tests = 136,348

Figure 5. V

Accuracy Histogram

ITP

Tested at VDD= 1.5 V and VDD= 5.5 V, total tests = 136,348

Figure 6. Hysteresis Histogram

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Figure 7. CT Current vs Temperature

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Temperature (qC)

Startup Delay (Ps)

-50 -25 0 25 50 75 100 125

0

100

200

300

400

500

600

D008

VCC = 1.5 V
VCC = 3.3 V
VCC = 5.5 V

Overdrive (%)

Propagation Delay (Ps)

1 10 100

29

30

31

32

33

34

D009

-40qC
0qC

25qC
85qC

125qC

Temperature (qC)

MR Threshold (V)

-50 -25 0 25 50 75 100 125

0

0.25

0.5

0.75

1

D006

V

IL

V

IH

Temperature (qC)

MR Threshold (V)

-50 -25 0 25 50 75 100 125

1

1.25

1.5

1.75

2

2.25

2.5

2.75

3

V

IL

V

IH

VDD (V)

Supply Current (PA)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

0

1

2

3

4

5

6

D004

-40qC
0qC

25qC
85qC

105qC
125qC

VDD (V)

Supply Current (PA)

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

0

1

2

3

4

5

6

-40qC
0qC

25qC
85qC

105qC
125q

TPS3890-Q1

SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

www.ti.com

Typical Characteristics (continued)

over the operating junction temperature range of –40°C to +125°C, 1.5 V ≤ VDD≤ 5.5 V, and MR = VDD(unless otherwise
noted)

MR = V

DD

Figure 8. Supply Current vs Power-Supply Voltage

Figure 9. Supply Current vs Power-Supply Voltage

MR = 0 V

VDD= 1.5 V

Figure 10. MR Threshold vs Temperature

Figure 12. Startup Delay vs Temperature

8

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VDD= 5.5 V

Figure 11. MR Threshold vs Temperature

VDD= 5.5 V

Figure 13. Propagation Delay (t

PD(r)

) vs Overdrive

Temperature (qC)

SENSE Glitch Immunity (Ps)

-50 -25 0 25 50 75 100 125

0

2

4

6

8

10

12

14

16

18

20

D017

Overdrive=3%
Overdrive=5%
Overdrive=10%

Temperature (qC)

SENSE Glitch Immunity (Ps)

-50 -25 0 25 50 75 100 125

29

29.5

30

30.5

31

31.5

32

Overdrive=3%
Overdrive=5%
Overdrive=10%

Overdrive (%)

Propagation Delay (Ps)

1 10 100

2

6

10

14

18

22

26

30

34

D012

-40qC
0qC

25qC
85qC

125qC

Temperature (qC)

SENSE Glitch Immunity (Ps)

-50 -25 0 25 50 75 100 125

29

29.5

30

30.5

31

31.5

32

Overdrive=3%
Overdrive=5%
Overdrive=10%

Overdrive (%)

Propagation Delay (Ps)

1 10 100

29

30

31

32

33

34

D010

-40qC
0qC

25qC
85qC

125qC

Overdrive (%)

Propagation Delay (Ps)

1 10 100

2

6

10

14

18

22

26

30

34

D011

-40qC
0qC

25qC
85qC

125qC

TPS3890-Q1

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SBVS303B –MARCH 2017–REVISED FEBRUARY 2018

Typical Characteristics (continued)

over the operating junction temperature range of –40°C to +125°C, 1.5 V ≤ VDD≤ 5.5 V, and MR = VDD(unless otherwise
noted)

VDD= 1.5 V

Figure 14. Propagation Delay (t

VDD= 1.5 V

Figure 16. Propagation Delay (t

) vs Overdrive

PD(r)

) vs Overdrive

PD(f)

VDD= 5.5 V

Figure 15. Propagation Delay (t

) vs Overdrive

PD(f)

VDD= 5.5 V

Figure 17. Low-to-High Glitch Immunity vs Temperature

Figure 18. Low-to-High Glitch Immunity vs Temperature

VDD= 1.5 V

Figure 19. High-to-Low Glitch Immunity vs Temperature

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VDD= 5.5 V

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9