Texas Instruments TPS22965DSGR, TPS22965NDSGR Schematic [ru]

0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
R
ON
VIN (V)
-40C
25C
105C
C001
Power
Supply
OFF
ON
TPS22965x
VIN
VOUT
R
L
C
L
GND
ON
CT
C
IN
VBIAS
GND
Product Folder
Sample & Buy
Technical Documents
Tools & Software
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TPS22965x 5.7-V, 6-A, 16-mΩ On-Resistance Load Switch

1 Features 3 Description

1
Integrated Single Channel Load Switch
Input Voltage Range: 0.8 V to 5.7 V
Ultra-Low On Resistance (RON) – RON= 16 mat VIN= 5 V (V – RON= 16 mat VIN= 3.6 V (V – RON= 16 mat VIN= 1.8 V (V
BIAS
BIAS BIAS
= 5 V)
= 5 V) = 5 V)
6-A Maximum Continuous Switch Current
Low Quiescent Current (50 µA)
Low Control Input Threshold Enables Use of
1.2-V, 1.8-V, 2.5-V, and 3.3-V Logic
Configurable Rise Time
Quick Output Discharge (QOD) (TPS22965 Only)
SON 8-pin Package With Thermal Pad
ESD Performance Tested per JESD 22 – 2000-V HBM and 1000-V CDM

2 Applications

Ultrabook™
Notebooks/Netbooks
Tablet PC
Consumer Electronics
Set-top Boxes/Residential Gateways
Telecom Systems
Solid State Drives (SSDs)
The TPS22965x is a single channel load switch that provides configurable rise time to minimize inrush current. The device contains an N-channel MOSFET that can operate over an input voltage range of 0.8 V to 5.7 V and can support a maximum continuous current of 6 A. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with low-voltage control signals. In the TPS22965, a 225-Ω on-chip load resistor is added for quick output discharge when switch is turned off.
The TPS22965x is available in a small, space-saving
2.00 mm × 2.00 mm 8-pin SON package (DSG) with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –40°C to 105°C.
Device Information
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS22965x WSON (8) 2.00 mm × 2.00 mm (1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
(1)

4 Simplified Schematic

1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
RONvs VIN(V
BIAS
= 5 V, I
= –200 mA)
OUT
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
www.ti.com

Table of Contents

1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Simplified Schematic............................................. 1
5 Revision History..................................................... 2
6 Device Comparison Table..................................... 3
7 Pin Configuration and Functions......................... 3
8 Specifications......................................................... 4
8.1 Absolute Maximum Ratings ...................................... 4
8.2 ESD Ratings.............................................................. 4
8.3 Recommended Operating Conditions....................... 4
8.4 Thermal Information.................................................. 5
8.5 Electrical Characteristics, V
8.6 Electrical Characteristics, V
8.7 Switching Characteristics.......................................... 7
8.8 Typical DC Characteristics........................................ 8
8.9 Typical Switching Characteristics ........................... 11
= 5.0 V ................... 5
BIAS
= 2.5 V ................... 6
BIAS
9 Detailed Description ............................................ 14
9.1 Overview ................................................................. 14
9.2 Functional Block Diagram....................................... 14
9.3 Feature Description................................................. 15
9.4 Device Functional Modes........................................ 15
10 Application and Implementation........................ 16
10.1 Application Information.......................................... 16
10.2 Typical Application ................................................ 17
11 Power Supply Recommendations ..................... 18
12 Layout................................................................... 19
12.1 Layout Guidelines ................................................. 19
12.2 Layout Example .................................................... 19
12.3 Thermal Considerations........................................ 19
13 Device and Documentation Support ................. 20
13.1 Community Resources.......................................... 20
13.2 Trademarks........................................................... 20
13.3 Electrostatic Discharge Caution............................ 20
13.4 Glossary................................................................ 20
14 Mechanical, Packaging, and Orderable
Information........................................................... 20

5 Revision History

Changes from Revision C (February 2015) to Revision D Page
Added TPS22965N part number ........................................................................................................................................... 1
Updated Thermal Information table ....................................................................................................................................... 5
Updated typical AC timing parameters (tables, graphs and scope captures) ..................................................................... 11
Changes from Revision B (June 2014) to Revision C Page
Extended Recommended Operating free-air temperature range maximum to 105°C. ......................................................... 1
Added temperature operations to Electrical Characteristics, V
Added temperature operations to Electrical Characteristics, V
= 5.0 V ........................................................................... 5
BIAS
= 2.5 V ........................................................................... 6
BIAS
Changes from Revision A (August 2013) to Revision B Page
Added Device Information table, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1
Changed MAX value of "VIN" from 5.5 V to 5.7 V. ................................................................................................................. 4
Changed MAX value of "V
" from 5.5 V to 5.7 V. .............................................................................................................. 4
BIAS
Changed MAX value of "VON" from 5.5 V to 5.7 V.................................................................................................................. 4
Added Thermal Information table .......................................................................................................................................... 5
Changes from Original (August 2012) to Revision A Page
Updated VON MAX value to fix typo that restricted operating range. Changed MAX value from "VIN" to "5.5" to align
with rest of document. ........................................................................................................................................................... 4
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TOP VIEW
BOTTOM VIEW
VIN
VIN
ON
VBIAS
VIN
VIN
VBIAS
GND
VOUT
VOUT
CT
GND
VOUT
VOUT
CT
ON
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
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6 Device Comparison Table

TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
DEVICE RONAT 3.3 V (TYP) MAXIMUM OUTPUT CURRENT ENABLE
TPS22965 16 mΩ Yes 6 A Active high
TPS22965N 16 mΩ No 6 A Active high

7 Pin Configuration and Functions

QUICK OUTPUT
DISCHARGE
DSG PACKAGE
Pin Functions
PIN
NAME NO.
VIN 1, 2 I ON 3 I Active high switch control input. Do not leave floating. VBIAS 4 I GND 5 Device ground.
CT 6 O Switch slew rate control. Can be left floating. See Adjustable Rise Time for more information. VOUT 7, 8 O Switch output Thermal Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Example
Pad for layout guidelines.
I/O DESCRIPTION
Switch input. Input bypass capacitor recommended for minimizing VINdip. Must be connected to Pin 1 and Pin 2. See Application and Implementation for more information.
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to
5.7 V. See Application and Implementation for more information.
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SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
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8 Specifications

8.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
V V V V I
MAX
I
PLS
T T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
(2) All voltage values are with respect to network ground pin.
Input voltage –0.3 6 V
IN
Output voltage –0.3 6 V
OUT
Bias voltage –0.3 6 V
BIAS
On voltage –0.3 6 V
ON
Maximum continuous switch current 6 A Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 8 A Maximum junction temperature 125 °C
J
Storage temperature –65 150 °C
stg
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions are not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

8.2 ESD Ratings

V
(ESD)
Electrostatic discharge V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 Charged-device model (CDM), per JEDEC specification JESD22-C101
(1) (2)
MIN MAX UNIT
(1)
(2)
VALUE UNIT
±2000 ±1000

8.3 Recommended Operating Conditions

MIN MAX UNIT
V V V V V V C T
A
(1) Refer to Application Information . (2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
Input voltage range 0.8 V
IN
Bias voltage range 2.5 5.7 V
BIAS
ON voltage range 0 5.7 V
ON
Output voltage range V
OUT
High-level input voltage, ON V
IH
Low-level input voltage, ON V
IL
Input capacitor 1
IN
Operating free-air temperature range
have to be derated. Maximum ambient temperature [T maximum power dissipation of the device in the application [P in the application (θJA), as given by the following equation: T
= 2.5 V to 5.7 V 1.1 5.7 V
BIAS
= 2.5 V to 5.7 V 0 0.5 V
BIAS
(2)
] is dependent on the maximum operating junction temperature [T
A(max)
], and the junction-to-ambient thermal resistance of the part/package
D(max)
A (max)
= T
J(max)
– (θJA× P
D(max)
)
(1)
–40 105 °C
BIAS
IN
J(max)
V
V
µF
], the
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SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015

8.4 Thermal Information

TPS22965x
THERMAL METRIC
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
R
θJC(bot)
Junction-to-ambient thermal resistance 72.3 °C/W Junction-to-case (top) thermal resistance 96.1 °C/W Junction-to-board thermal resistance 42.1 °C/W Junction-to-top characterization parameter 3.3 °C/W Junction-to-board characterization parameter 42.5 °C/W Junction-to-case (bottom) thermal resistance 13.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(1)
DSG (WSON) UNIT
8 PINS
8.5 Electrical Characteristics, V
BIAS
= 5.0 V
Unless otherwise noted, the specification in the following table applies where V
PARAMETER TEST CONDITIONS T
POWER SUPPLIES AND CURRENTS
I
= 0 mA,
IQV ISDV
ISDV
I
ON
VBIAS
V
quiescent current –40°C to 105°C 50 75 µA
BIAS
V
BIAS
IN
shutdown current VON= GND, V
BIAS
VINoff-state supply current µA
ON pin input leakage current VON= 5.5 V –40°C to 105°C 0.5 µA
RESISTANCE CHARACTERISTICS
R
ON
(1)
R
PD
ON-state resistance
Output pulldown resistance VIN= 5.0 V, VON= 0 V, I
(1) TPS22965 only
OUT
VIN= VON= V
VON= GND, V
= 0 V
OUT
I
= –200 mA,
OUT
V
= 5.0 V
BIAS
= 5.0 V
BIAS
= 0 V –40°C to 105°C 2 µA
OUT
VIN= 5.0 V –40°C to 105°C 0.005 5 VIN= 3.3 V –40°C to 105°C 0.002 3 VIN= 1.8 V –40°C to 105°C 0.002 2 VIN= 0.8 V –40°C to 105°C 0.001 1
VIN= 5.0 V –40°C to 85°C 23 m
VIN= 3.3 V –40°C to 85°C 23 m
VIN= 1.8 V –40°C to 85°C 23 m
VIN= 1.5 V –40°C to 85°C 23 m
VIN= 1.2 V –40°C to 85°C 23 m
VIN= 0.8 V –40°C to 85°C 23 m
= 15 mA –40°C to 105°C 225 300
OUT
= 5.0 V. Typical values are for TA= 25 °C.
BIAS
A
MIN TYP MAX UNIT
25°C 16 21
–40°C to 105°C 25
25°C 16 21
–40°C to 105°C 25
25°C 16 21
–40°C to 105°C 25
25°C 16 21
–40°C to 105°C 25
25°C 16 21
–40°C to 105°C 25
25°C 16 21
–40°C to 105°C 25
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SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
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8.6 Electrical Characteristics, V
BIAS
= 2.5 V
Unless otherwise noted, the specification in the following table applies where V
PARAMETER TEST CONDITIONS T
POWER SUPPLIES AND CURRENTS
I
= 0 mA,
IQV ISDV
ISDV
I
ON
VBIAS
V
quiescent current –40°C to 105°C 20 30 µA
BIAS
V
BIAS
IN
shutdown current VON= GND, V
BIAS
VINoff-state supply current µA
ON pin input leakage current VON= 5.5 V –40°C to 105°C 0.5 µA
RESISTANCE CHARACTERISTICS
R
ON
(1)
R
PD
ON-state resistance VIN= 1.5 V –40°C to 85°C 25 m
Output pulldown resistance VIN= 2.5 V, VON= 0 V, I
(1) TPS22965 only
OUT
VIN= VON= V
VON= GND, V
= 0 V
OUT
I
= –200 mA,
OUT
V
= 2.5 V
BIAS
= 2.5 V
BIAS
= 0 V –40°C to 105°C 2 µA
OUT
VIN= 2.5 V –40°C to 105°C 0.005 3 VIN= 1.8 V –40°C to 105°C 0.002 2 VIN= 1.2 V –40°C to 105°C 0.002 2 VIN= 0.8 V –40°C to 105°C 0.001 1
VIN= 2.5 V –40°C to 85°C 27 m
VIN= 1.8 V –40°C to 85°C 26 m
VIN= 1.2 V –40°C to 85°C 25 m
VIN= 0.8 V –40°C to 85°C 25 m
= 1 mA –40°C to 105°C 275 325
OUT
= 2.5 V. Typical values are for TA= 25 °C.
BIAS
A
MIN TYP MAX UNIT
25°C 20 24
–40°C to 105°C 28
25°C 19 23
–40°C to 105°C 28
25°C 18 23
–40°C to 105°C 27
25°C 18 23
–40°C to 105°C 27
25°C 17 22
–40°C to 105°C 27
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8.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN= VON= V
t t t t t
ON OFF R F D
Turn-on time 1600 Turn-off time 9 V V ON delay time 660
VIN= 0.8 V, VON= V
t t t t t
ON OFF R F D
Turn-on time 730 Turn-off time 100 V V ON delay time 560
VIN= 2.5 V, VON= 5 V, V
t t t t t
ON OFF R F D
Turn-on time 2435 Turn-off time 9 V V ON delay time 1230
VIN= 0.8 V, VON= 5 V, V
t t t t t
ON OFF R F D
Turn-on time 1565 Turn-off time 70 V V ON delay time 1110
= 5 V, TA= 25ºC (unless otherwise noted)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 1985 µs
OUT
fall time 3
OUT
= 5 V, TA= 25ºC (unless otherwise noted)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 380 µs
OUT
fall time 8
OUT
= 2.5 V, TA= 25ºC (unless otherwise noted)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 2515 µs
OUT
fall time 4
OUT
= 2.5 V, TA= 25ºC (unless otherwise noted)
BIAS
rise time RL= 10 Ω, CL= 0.1 µF, CT= 1000 pF 930 µs
OUT
fall time 8
OUT
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
A. Rise and fall times of the control signal is 100 ns.
Figure 1. Test Circuit
Figure 2. tON/t
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Waveforms
OFF
0
5
10
15
20
25
30
35
40
-50 0 50 100 150
R
ON
(m)
Temperature (£C)
VIN = 0.8V
VIN = 1.8V
VIN = 2.5V
C001
10
12
14
16
18
20
22
24
-50 0 50 100 150
R
ON
(m)
Temperature (£C)
VIN = 0.8V
VIN = 3.3V
VIN = 5V
C001
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
2 2.5 3 3.5 4 4.5 5 5.5 6
I
SD
V
BIAS
(µA)
V
BIAS
(V)
-40C
25C
105C
C001
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
I
SD
V
IN
(µA)
V
(V)
-40°C
25°C
105°C
C001
0
10
20
30
40
50
60
70
2 2.5 3 3.5 4 4.5 5 5.5 6
I
Q
V
BIAS
(µA)
V
BIAS
(V)
-40C
25C
105C
C001
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
I
Q
V
BIAS
(µA)
VIN (V)
-40C
25C
105C
C001
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015

8.8 Typical DC Characteristics

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VIN= 1.8 V VON= 5 V V
Figure 3. V
Quiescent Current vs V
BIAS
BIAS
VIN= 5 V VON= 0 V V
Figure 5. ISDV
BIAS
vs V
BIAS
= 0 V V
OUT
= 0 V V
OUT
= 5 V VON= 5 V V
BIAS
Figure 4. IQV
= 5 V VON= 0 V V
BIAS
BIAS
vs V
Figure 6. ISDVINvs V
= 0 V
OUT
IN
= 0 V
OUT
IN
V
= 2.5 V I
BIAS
All three RON curves have the same Note: All three RONcurves have the same values and hence only one line is visible. values; therefore, only one line is visible.
Figure 7. RONvs Ambient Temperature Figure 8. RONvs Ambient Temperature
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= –200 mA VON= 5.5 V V
OUT
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= 5 V I
BIAS
= –200 mA VON= 5.5 V
OUT
-0.5
0
0.5
1
1.5
2
2.5
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
V
OUT
(V)
VON (V)
VBIAS = 2.5V
VBIAS = 3.3V VBIAS = 5V
VBIAS = 5.5V
C001
10
12
14
16
18
20
22
24
26
28
30
0 0.5 1 1.5 2 2.5 3
R
ON
(m)
VIN (V)
-40C
25C
105C
C001
10
12
14
16
18
20
22
24
2 2.5 3 3.5 4 4.5 5 5.5 6
R
ON
(m)
V
BIAS
(V)
VIN = 0.8V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
C001
200
220
240
260
280
300
320
2 2.5 3 3.5 4 4.5 5 5.5 6
R
PD
()
V
BIAS
(V)
-40C
25C
105C
C001
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
R
ON
(m)
VIN (V)
-40C
25C
105C
C001
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
R
ON
(m)
VIN (V)
-40C
25C
105C
C001
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Typical DC Characteristics (continued)
V
= 2.5 V I
BIAS
= –200 mA VON= 5.5 V V
OUT
= 5 V I
BIAS
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
= –200 mA VON= 5.5 V
OUT
Figure 9. RONvs V
TA= 25°C I
Figure 11. RONvs V
IN
= –200 mA VON= 5.5 V VIN= 1.8 V VON= 0 V
OUT
BIAS
Figure 10. RONvs V
Figure 12. RPDvs V
IN
BIAS
VIN= 2 V TA= 25°C V
Figure 13. V
OUT
vs V
ON
= 2.5 V I
BIAS
= –4 A VON= 5.5 V
OUT
Figure 14. RONvs V
IN
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10
12
14
16
18
20
22
24
26
28
30
0 1 2 3 4 5 6
R
ON
(m)
VIN (V)
-40C
25C
105C
C001
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
Typical DC Characteristics (continued)
V
= 5 V I
BIAS
Figure 15. RONvs V
= –4 A VON= 5.5 V
OUT
IN
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0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0
t
OFF
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
20
40
60
80
100
120
140
160
0.0 1.0 2.0 3.0 4.0 5.0 6.0
t
OFF
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
2
4
6
8
10
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0
t
F
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
2
4
6
8
10
12
0.0 1.0 2.0 3.0 4.0 5.0 6.0
t
F
(µs)
VIN (V)
-40°C 25°C 105°C
C001
400
600
800
1000
1200
1400
1600
0.0 0.5 1.0 1.5 2.0 2.5 3.0
t
D
(µs)
VIN (V)
-40°C 25°C 105°C
C001
200
300
400
500
600
700
800
900
0.0 1.0 2.0 3.0 4.0 5.0 6.0
t
D
(µs)
VIN (V)
-40°C 25°C 105°C
C001
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8.9 Typical Switching Characteristics

TA= 25°C, CT= 1000 pF, CIN= 1 µF, CL= 0.1 µF, RL= 10 Ω
V
= 2.5 V CT = 1000 pF V
BIAS
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
= 5 V CT = 1000 pF
BIAS
TPS22965
Figure 16. tDvs V
V
= 2.5 V CT = 1000 pF V
BIAS
Figure 18. tFvs V
IN
IN
Figure 17. tDvs V
= 5 V CT = 1000 pF
BIAS
Figure 19. tFvs V
IN
IN
V
= 2.5 V CT = 1000 pF V
BIAS
Figure 20. t
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OFF
vs V
IN
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= 5 V CT = 1000 pF
BIAS
Figure 21. t
OFF
vs V
IN
0
500
1000
1500
2000
2500
3000
3500
0.0 0.5 1.0 1.5 2.0 2.5 3.0
t
R
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
500
1000
1500
2000
2500
0.0 1.0 2.0 3.0 4.0 5.0 6.0
t
R
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
500
1000
1500
2000
2500
3000
3500
0.0 0.5 1.0 1.5 2.0 2.5 3.0
t
ON
(µs)
VIN (V)
-40°C 25°C 105°C
C001
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0.0 1.0 2.0 3.0 4.0 5.0 6.0
t
ON
(µs)
VIN (V)
-40°C 25°C 105°C
C001
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
Typical Switching Characteristics (continued)
TA= 25°C, CT= 1000 pF, CIN= 1 µF, CL= 0.1 µF, RL= 10 Ω
V
= 2.5 V CT = 1000 pF V
BIAS
= 5 V CT = 1000 pF
BIAS
www.ti.com
Figure 22. tONvs V
V
= 2.5 V CT = 1000 pF V
BIAS
Figure 24. tRvs V
IN
IN
Figure 23. tONvs V
= 5 V CT = 1000 pF
BIAS
Figure 25. tRvs V
IN
IN
VIN= 0.8 V V
BIAS
CL= 0.1 µF RL= 10 Ω CL= 0.1 µF RL= 10 Ω
Figure 26. Turn-on Response Time Figure 27. Turn-on Response Time
12 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
= 2.5 V CIN= 1 µF VIN= 0.8 V V
Product Folder Links: TPS22965
= 5.0 V CIN= 1 µF
BIAS
www.ti.com
Typical Switching Characteristics (continued)
TA= 25°C, CT= 1000 pF, CIN= 1 µF, CL= 0.1 µF, RL= 10 Ω
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
VIN= 2.5 V V
= 2.5 V CIN= 1 µF, VIN= 5.0 V V
BIAS
= 5.0 V CIN= 1 µF
BIAS
CL= 0.1 µF RL= 10 Ω CL= 0.1 µF RL= 10 Ω
Figure 28. Turn-on Response Time Figure 29. Turn-on Response Time
VIN= 0.8 V V
= 2.5 V CIN= 1 µF VIN= 0.8 V V
BIAS
= 5.0 V CIN= 1 µF
BIAS
CL= 0.1 µF RL= 10 Ω CL= 0.1 µF RL= 10 Ω
Figure 30. Turn-off Response Time Figure 31. Turn-off Response Time
VIN= 2.5 V V
= 2.5 V CIN= 1 µF VIN= 5.0 V V
BIAS
= 5.0 V CIN= 1 µF
BIAS
CL= 0.1 µF RL= 10 Ω CL= 0.1 µF RL= 10 Ω)
Figure 32. Turn-off Response Time Figure 33. Turn-off Response Time
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Links: TPS22965
Charge
Pump
Control
Logic
VIN
ON
VOUT
GND
CT
VBIAS
TPS22965 Only
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
www.ti.com

9 Detailed Description

9.1 Overview

The TPS22965x device is a single channel, 6-A load switch in an 8-pin SON package. To reduce the voltage drop in high current rails, the device implements an ultra-low resistance N-channel MOSFET. The device has a programmable slew rate for applications that require specific rise-time.
The device has very low leakage current during off state. This prevents downstream circuits from pulling high standby current from the supply. Integrated control logic, driver, power supply, and output discharge FET eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.

9.2 Functional Block Diagram

14 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS22965
SR 0.38 CT 34= ´ +
TPS22965
www.ti.com
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015

9.3 Feature Description

9.3.1 Adjustable Rise Time

A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 12 V; therefore, the minimum voltage rating for the CT capacitor should be 25 V for optimal performance. An approximate formula for the relationship between CT and slew rate when V
Equation 1. This equation accounts for 10% to 90% measurement on V
and does NOT apply for CT = 0 pF.
OUT
Use Table 1 to determine rise times for when CT = 0 pF.
where
SR = slew rate (in µs/V)
CT = the capacitance value on the CT pin (in pF)
The units for the constant 34 are µs/V. The units for the constant 0.38 are µs/(V × pF). (1)
Rise time can be calculated by multiplying the input voltage by the slew rate. The table below contains rise time values measured on a typical device. Rise times shown below are only valid for the power-up sequence where VINand V
are already in steady state condition before the ON pin is asserted high.
BIAS
Table 1. Rise Time vs CT Capacitor
RISE TIME (µs) 10% - 90%, CL= 0.1 µF, CIN= 1 µF, RL= 10 Ω, V
CT (pF)
VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.5 V VIN = 1.2 V VIN = 1.05 V VIN = 0.8 V
0 180 136 94 84 74 70 60 220 547 378 232 202 173 157 129 470 962 654 386 333 282 252 206
1000 1983 1330 765 647 533 476 382 2200 4013 2693 1537 1310 1077 959 766 4700 8207 5490 3137 2693 2200 1970 1590
10000 17700 11767 6697 5683 4657 4151 3350
TYPICAL VALUES at 25°C with a 25 V X7R 10% CERAMIC CAPACITOR on CT
is set to 5 V is shown in
BIAS
= 5 V
BIAS

9.3.2 Quick Output Discharge (QOD) (TPS22965 Only)

The TPS22965 includes a QOD feature. When the switch is disabled, a discharge resistor is connected between VOUT and GND. This resistor has a typical value of 225 and prevents the output from floating while the switch is disabled.

9.3.3 Low Power Consumption During Off State

The ISDVINsupply current is 0.01 µA typical at 1.8 VIN. Typically, the downstream loads would have a significantly higher off-state leakage current. The load switch allows system standby power consumption to be reduced.

9.4 Device Functional Modes

The Table 2 lists the VOUT pin states as determined by the ON pin.
Table 2. VOUT Connection
ON TPS22965 TPS22965N
L GND Open
H VIN VIN
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Links: TPS22965
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
www.ti.com

10 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

10.1 Application Information

10.1.1 ON/OFF Control

The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard GPIO logic thresholds. It can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot be left floating and must be driven either high or low for proper functionality.

10.1.2 Input Capacitor (Optional)

To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CINcan be used to further reduce the voltage drop during high current applications. When switching heavy loads, it is recommended to have an input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.

10.1.3 Output Capacitor (Optional)

Due to the integrated body diode in the NMOS switch, a CINgreater than CLis highly recommended. A C greater than CINcan cause V flow through the body diode from V
to exceed VINwhen the system supply is removed. This could result in current
OUT
to VIN. A CINto CLratio of 10 to 1 is recommended for minimizing VINdip
OUT
caused by inrush currents during startup; however, a 10 to 1 ratio for capacitance is not required for proper functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more VINdip upon turn-on due to inrush currents. This can be mitigated by increasing the capacitance on the CT pin for a longer rise time (see Adjustable Rise Time section below).
10.1.4 VINand V
For optimal RONperformance, make sure VIN≤ V exhibit RONgreater than what is listed in the Electrical Characteristics, V example of a typical device. Notice the increasing RONas VINexceeds V voltage rating for VINand V
Voltage Range
BIAS
BIAS
. The device will still be functional if VIN> V
BIAS
= 5.0 V table. See Figure 34 for an
BIAS
voltage. Never exceed the maximum
BIAS
BIAS
but it will
.
L
16 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS22965
Power Supply
OFF
ON
TPS22965x
VIN
VOUT
R
L
C
L
GND
ON
CT
C
IN
VBIAS
GND
Power Supply
www.ti.com
Application Information (continued)
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
TA= 25 °C I
Figure 34. RONvs V
= –200 mA
OUT
IN

10.2 Typical Application

This application demonstrates how the TPS22965x can be used to power downstream modules.
Figure 35. Powering a Downstream Module

10.2.1 Design Requirements

DESIGN PARAMETER EXAMPLE VALUE
V
IN
V
BIAS
C
L
Maximum Acceptable Inrush Current 400 mA
3.3 V 5 V
22 µF
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Links: TPS22965
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
www.ti.com

10.2.2 Detailed Design Procedure

10.2.2.1 Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to the set value (3.3 V in this example). This charge arrives in the form of inrush current. Inrush current can be calculated using the following equation:
Inrush Current = C × dV/dt
where
C = output capacitance
dV = output voltage
dt = rise time (2)
The TPS22965x offers adjustable rise time for VOUT. This feature allows the user to control the inrush current during turn-on. The appropriate rise time can be calculated using the design requirements and the inrush current equation.
400 mA = 22 µF × 3.3 V/dt (3) dt = 181.5 µs (4)
To ensure an inrush current of less than 400 mA, choose a CT value that will yield a rise time of more than 181.5 µs. See the oscilloscope captures below (Application Curves) for an example of how the CT capacitor can be used to reduce inrush current.

10.2.3 Application Curves

V
= 5 V VIN= 3.3 V CL= 22 µF V
BIAS
Figure 36. Inrush Current with CT = 0 pF Figure 37. Inrush Current with CT = 220 pF
= 5 V VIN= 3.3 V CL= 22 µF
BIAS

11 Power Supply Recommendations

The device is designed to operate from a VBIAS range of 2.5 V to 5.7 V and a VIN range of 0.8 V to VBIAS.
18 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS22965
J(max) A
D(max)
JA
T T
-
=
θ
Pin 1
VIN
VIN
ON
VBIAS
VOUT
VOUT
CT
GND
VIA to GND
*
*Note: Thermal relief vias
Thermal relief vias connected to the exposed thermal pad
GND
TPS22965
www.ti.com
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015

12 Layout

12.1 Layout Guidelines

For best performance, all traces should be as short as possible. To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects along with minimizing the case to ambient thermal impedance. The CT trace should be as short as possible to avoid parasitic capacitance.

12.2 Layout Example

Figure 38. Layout Recommendation

12.3 Thermal Considerations

The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To calculate the maximum allowable dissipation, P following equation as a guideline:
where
P
T
TA= ambient temperature of the device
ΘJA= junction to air thermal impedance. See the Thermal Information. This parameter is highly dependent
Refer to Figure 38, notice that the thermal vias are located under the exposed thermal pad of the device. This allows for thermal diffusion away from the device.
Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 19
= maximum allowable power dissipation
D(max)
= maximum allowable junction temperature (125°C for the TPS22965x)
J(max)
upon board layout. (5)
Product Folder Links: TPS22965
for a given output current and ambient temperature, use the
D(max)
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
www.ti.com

13 Device and Documentation Support

13.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

13.2 Trademarks

E2E is a trademark of Texas Instruments. Ultrabook is a trademark of Intel. All other trademarks are the property of their respective owners.

13.3 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.4 Glossary

SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
20 Submit Documentation Feedback Copyright © 2012–2015, Texas Instruments Incorporated
Product Folder Links: TPS22965
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2015
PACKAGING INFORMATION
Orderable Device Status
TPS22965DSGR ACTIVE WSON DSG 8 3000 Green (RoHS
TPS22965DSGT ACTIVE WSON DSG 8 250 Green (RoHS
TPS22965NDSGR ACTIVE WSON DSG 8 3000 Green (RoHS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish
(6)
CU NIPDAU Level-2-260C-1 YEAR -40 to 105 ZSA0
CU NIPDAU Level-2-260C-1 YEAR -40 to 105 ZSA0
CU NIPDAU Level-2-260C-1 YEAR -40 to 105 ZDVI
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
26-Jun-2015
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TPS22965 :
Automotive: TPS22965-Q1
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jun-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type
TPS22965DSGR WSON DSG 8 3000 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
TPS22965DSGT WSON DSG 8 250 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
TPS22965NDSGR WSON DSG 8 3000 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
Package
Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jun-2015
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS22965DSGR WSON DSG 8 3000 210.0 185.0 35.0 TPS22965DSGT WSON DSG 8 250 210.0 185.0 35.0
TPS22965NDSGR WSON DSG 8 3000 210.0 185.0 35.0
Pack Materials-Page 2
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