•Ultra-Low On Resistance (RON)
– RON= 16 mΩ at VIN= 5 V (V
– RON= 16 mΩ at VIN= 3.6 V (V
– RON= 16 mΩ at VIN= 1.8 V (V
BIAS
BIAS
BIAS
= 5 V)
= 5 V)
= 5 V)
•6-A Maximum Continuous Switch Current
•Low Quiescent Current (50 µA)
•Low Control Input Threshold Enables Use of
1.2-V, 1.8-V, 2.5-V, and 3.3-V Logic
•Configurable Rise Time
•Quick Output Discharge (QOD) (TPS22965 Only)
•SON 8-pin Package With Thermal Pad
•ESD Performance Tested per JESD 22
– 2000-V HBM and 1000-V CDM
2Applications
•Ultrabook™
•Notebooks/Netbooks
•Tablet PC
•Consumer Electronics
•Set-top Boxes/Residential Gateways
•Telecom Systems
•Solid State Drives (SSDs)
The TPS22965x is a single channel load switch that
provides configurable rise time to minimize inrush
current. The device contains an N-channel MOSFET
that can operate over an input voltage range of 0.8 V
to 5.7 V and can support a maximum continuous
current of 6 A. The switch is controlled by an on/off
input (ON), which is capable of interfacing directly
with low-voltage control signals. In the TPS22965, a
225-Ω on-chip load resistor is added for quick output
discharge when switch is turned off.
The TPS22965x is available in a small, space-saving
2.00 mm × 2.00 mm 8-pin SON package (DSG) with
integrated thermal pad allowing for high power
dissipation. The device is characterized for operation
over the free-air temperature range of –40°C to
105°C.
Device Information
PART NUMBERPACKAGEBODY SIZE (NOM)
TPS22965xWSON (8)2.00 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS22965
SLVSBJ0D –AUGUST 2012–REVISED JUNE 2015
(1)
4Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Changes from Revision C (February 2015) to Revision DPage
•Added TPS22965N part number ........................................................................................................................................... 1
•Updated Thermal Information table ....................................................................................................................................... 5
•Updated typical AC timing parameters (tables, graphs and scope captures) ..................................................................... 11
Changes from Revision B (June 2014) to Revision CPage
•Extended Recommended Operating free-air temperature range maximum to 105°C. ......................................................... 1
•Added temperature operations to Electrical Characteristics, V
•Added temperature operations to Electrical Characteristics, V
= 5.0 V ........................................................................... 5
BIAS
= 2.5 V ........................................................................... 6
BIAS
Changes from Revision A (August 2013) to Revision BPage
•Added Device Information table, ESD Ratings table, Feature Description section, Device Functional Modes,
Application and Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section ..................................... 1
•Changed MAX value of "VIN" from 5.5 V to 5.7 V. ................................................................................................................. 4
•Changed MAX value of "V
" from 5.5 V to 5.7 V. .............................................................................................................. 4
BIAS
•Changed MAX value of "VON" from 5.5 V to 5.7 V.................................................................................................................. 4
•Added Thermal Information table .......................................................................................................................................... 5
Changes from Original (August 2012) to Revision APage
•Updated VON MAX value to fix typo that restricted operating range. Changed MAX value from "VIN" to "5.5" to align
with rest of document. ........................................................................................................................................................... 4
DEVICERONAT 3.3 V (TYP)MAXIMUM OUTPUT CURRENTENABLE
TPS2296516 mΩYes6 AActive high
TPS22965N16 mΩNo6 AActive high
7Pin Configuration and Functions
QUICK OUTPUT
DISCHARGE
DSG PACKAGE
Pin Functions
PIN
NAMENO.
VIN1, 2I
ON3IActive high switch control input. Do not leave floating.
VBIAS4I
GND5—Device ground.
CT6OSwitch slew rate control. Can be left floating. See Adjustable Rise Time for more information.
VOUT7, 8OSwitch output
ThermalThermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Example
Padfor layout guidelines.
——
I/ODESCRIPTION
Switch input. Input bypass capacitor recommended for minimizing VINdip. Must be connected to
Pin 1 and Pin 2. See Application and Implementation for more information.
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to
5.7 V. See Application and Implementation for more information.
over operating free-air temperature range (unless otherwise noted)
V
V
V
V
I
MAX
I
PLS
T
T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
(2) All voltage values are with respect to network ground pin.
Input voltage–0.36V
IN
Output voltage–0.36V
OUT
Bias voltage–0.36V
BIAS
On voltage–0.36V
ON
Maximum continuous switch current6A
Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle8A
Maximum junction temperature125°C
J
Storage temperature–65150°C
stg
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions are not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
8.2 ESD Ratings
V
(ESD)
Electrostatic dischargeV
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
Charged-device model (CDM), per JEDEC specification JESD22-C101
(1) (2)
MINMAXUNIT
(1)
(2)
VALUEUNIT
±2000
±1000
8.3 Recommended Operating Conditions
MINMAXUNIT
V
V
V
V
V
V
C
T
A
(1) Refer to Application Information .
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
Input voltage range0.8V
IN
Bias voltage range2.55.7V
BIAS
ON voltage range05.7V
ON
Output voltage rangeV
OUT
High-level input voltage, ONV
IH
Low-level input voltage, ONV
IL
Input capacitor1
IN
Operating free-air temperature range
have to be derated. Maximum ambient temperature [T
maximum power dissipation of the device in the application [P
in the application (θJA), as given by the following equation: T
= 2.5 V to 5.7 V1.15.7V
BIAS
= 2.5 V to 5.7 V00.5V
BIAS
(2)
] is dependent on the maximum operating junction temperature [T
A(max)
], and the junction-to-ambient thermal resistance of the part/package
All three RON curves have the sameNote:All three RONcurves have the same
values and hence only one line is visible.values; therefore, only one line is visible.
Figure 7. RONvs Ambient TemperatureFigure 8. RONvs Ambient Temperature