Texas Instruments TPS2105DR, TPS2105DBVT, TPS2105D, TPS2105DBVR, TPS2104DR Datasheet
...
TPS2104, TPS2105
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
features
D
Dual-Input, Single-Output MOSFET Switch
With No Reverse Current Flow (No Parasitic
Diodes)
D
IN1 . . . 250-mΩ, 500-mA N-Channel;
18-µA Supply Current
D
IN2 . . . 1.3-Ω, 100-mA P-Channel;
0.75-µA Supply Current (V
AUX
Mode)
D
Advanced Switch Control Logic
D
CMOS and TTL Compatible Enable Input
D
Controlled Rise, Fall, and Transition Times
D
2.7 V to 5.5 V Operating Range
D
SOT-23-5 and SOIC-8 Package
D
–40°C to 85°C Ambient Temperature Range
D
2-kV Human Body Model, 750-V Charged
Device Model, 200-V Machine-Model
ESD Protection
typical applications
D
Notebook and Desktop PCs
D
Cell phone, Palmtops, and PDAs
D
Battery Management
description
The TPS2104 and TPS2105 are dual-input, single-output power switches designed to provide uninterrupted
output voltage when transitioning between two independent power supplies. Both devices combine one
n-channel (250 mΩ) and one p-channel (1.3 Ω) MOSFET with a single output. The p-channel MOSFET (IN2)
is used with auxiliary power supplies that deliver lower current for standby modes. The n-channel MOSFET
(IN1) is used with a main power supply that delivers higher current required for normal operation. Low
on-resistance makes the n-channel the ideal path for higher main supply current when power-supply regulation
and system voltage drops are critical. When using the p-channel MOSFET, quiescent current is reduced to
0.75 µA to decrease the demand on the standby power supply . The MOSFETs in the TPS2104 and TPS2105
do not have the parasitic diodes, typically found in discrete MOSFETs, thereby preventing back-flow current
when the switch is off.
DBV PACKAGE
(TOP VIEW)
GND
IN2
IN1
OUT
EN
GND
IN2
IN1
OUT
EN
DBV PACKAGE
(TOP VIEW)
TPS2104
TPS2105
NC – No internal connection
1
2
3
4
8
7
6
5
IN2
GND
EN
NC
OUT
OUT
NC
IN1
D PACKAGE
(TOP VIEW)
D PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
IN2
GND
EN
NC
OUT
OUT
NC
IN1
1
2
3
5
4
1
2
35 4
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Figure 1. Typical Dual-Input Single-Output
Application
TPS2104
IN1
IN2
EN
5 V V
CC
5 V V
AUX
Control Signal
Holdup
Capacitor
LOAD
5 V
TPS2104, TPS2105
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Selection Guide, V
AUX
Power-Distribution Switches
DEVICE ENABLE
OPERATING
VOLTAGE RANGE
(V)
MAXIMUM INPUT
CURRENT, IN1
(mA)
MAXIMUM INPUT
CURRENT, IN2
(mA)
AMBIENT TEMPERATURE
RANGE (°C)
TPS2100 EN 2.7 to 4 500 10 –40 to 70
TPS2101 EN 2.7 to 4 500 10 –40 to 70
TPS2102 EN 2.7 to 4 500 100 –40 to 70
TPS2103 EN 2.7 to 4 500 100 –40 to 70
TPS2104 EN 2.7 to 5.5 500 100 –40 to 85
TPS2105 EN 2.7 to 5.5 500 100 –40 to 85
AVAILABLE OPTIONS FOR TPS2104, TPS2105
PACKAGED DEVICES
T
A
DEVICE ENABLE
SOT-23-5
(DBV)
†
SOIC-8
(D)
°
°
TPS2104 EN TSP2104DBV
†
TPS2104D
–
40°C to 85°C
TPS2105 EN TPS2105DBV
†
TPS2105D
Both packages are available left-end taped and reeled. Add an R suffix to the D device type
(e.g., TPS2105DR).
†
Add T (e.g., TPS2104DBVT) to indicate tape and reel at order quantity of 250 parts.
Add R (e.g., TPS2104DBVR) to indicate tape and reel at order quantity of 3000 parts.
Function Tables
TPS2104 TPS2105
VIN1 VIN2 EN OUT VIN1 VIN2 EN OUT
0 V 0 V XX GND 0 V 0 V XX GND
0 V 5 V L GND 0 V 5 V H GND
5 V 0 V L VIN1 5 V 0 V H VIN1
5 V 5 V L VIN1 5 V 5 V H VIN1
0 V 5 V H VIN2 0 V 5 V L VIN2
5 V 0 V H VIN2 5 V 0 V L VIN2
5 V 5 V H VIN2 5 V 5 V L VIN2
XX = don’t care
TPS2104, TPS2105
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2104 functional block diagram
V
CC
Select
Charge
Pump
Driver
GND
OUT
SW2
1.3 Ω
SW1
250 mΩ
Pullup
Circuit
Driver
IN1
EN
IN2
Discharge
Circuit
TPS2105 functional block diagram
V
CC
Select
Charge
Pump
Driver
GND
OUT
SW2
1.3 Ω
SW1
250 mΩ
Driver
IN1
EN
IN2
Pulldown
Circuit
Discharge
Circuit
TPS2104, TPS2105
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Terminal Functions
TERMINAL
NO.
NAME
TPS2104 TPS2105
I/O
DESCRIPTION
DBV D DBV D
EN 1 3 I Active-high enable for IN1-OUT switch
EN 1 3 I Active-low enable for IN1-OUT switch
GND 2 2 2 2 I Ground
IN1
†
5 5 5 5 I Main input voltage, NMOS drain (250 mΩ), require 0.22 µF bypass
IN2
†
3 1 3 1 I Auxilliary input voltage, PMOS drain (1.3 Ω), require 0.22 µF bypass
OUT 4 7, 8 4 7, 8 O Power switch output
NC 4, 6 4, 6 No connection
†
Unused INx should not be grounded.
detailed description
power switches
n-channel MOSFET
The IN1-OUT n-channel MOSFET power switch has a typical on-resistance of 250 mΩ at 5-V input voltage, and
is configured as a high-side switch.
p-channel MOSFET
The IN2-OUT p-channel MOSFET power switch has a typical on-resistance of 1.3 Ω at 5-V input voltage and
is configured as a high-side switch. When operating, the p-channel MOSFET quiescent current is reduced to
typically 0.75 µA.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the IN1-OUT and IN2-OUT power switches. T o limit large current surges
and reduce the associated electromagnetic interference (EMI) produced, the drivers incorporate circuitry that
controls the rise times and fall times of the output voltage.
enable
The logic enable will turn on the IN2-OUT power switch when a logic high is present on EN (TPS2104) or logic
low is present on EN (TPS2105). A logic low input on EN (TPS2104) or logic high on EN (TPS2105) restores
bias to the drive and control circuits and turns on the IN1-OUT power switch. The enable input is compatible
with both TTL and CMOS logic levels.
TPS2104, TPS2105
V
AUX
POWER-DISTRIBUTION SWITCHES
SLVS235A – SEPTEMBER 1999 – REVISED APRIL 2000
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Input voltage range, V
I(IN1)
(see Note 1) –0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I(IN2)
(see Note 1) –0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI at EN or EN (see Note 1) –0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output voltage range, VO (see Note 1) –0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous output current, I
O(IN1
) 700 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous output current, I
O(IN2)
140 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See dissipation rating table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . .
Electrostatic discharge (ESD) protection: Human body model 2 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Machine model 200 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charged device model 750 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
DISSIPATION RATING TABLE
PACKAGE
TA < 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
DBV 309 mW 3.1 mW/°C 170 mW 123 mW
D 568 mW 5.7 mW/°C 313 mW 227 mW
recommended operating conditions
MIN MAX UNIT
Input voltage, V
I(INx)
2.7 5.5 V
Input voltage, VI at EN and EN 0 5.5 V
Continuous output current, I
O(IN1)
500 mA
Continuous output current, I
O(IN2)
100
‡
mA
Operating virtual junction temperature, T
J
–40 125 °C
‡
The device can deliver up to 220 mA at I
O(IN2)
. However, operation at the higher current levels will result in greater voltage drop across the device,
and greater voltage droop when switching between IN1 and IN2.
electrical characteristics over recommended operating junction temperature range,
V
I(IN1)
= V
(IN2)
= 5 V, IO = rated current (unless otherwise noted)
power switch
PARAMETER
TEST
CONDITIONS
†
MIN TYP MAX UNIT
TJ = 25°C 250
IN1-OUT
TJ = 125°C 350 435
mΩ
r
DS(on)
On-state resistance
TJ = 25°C 1.3
IN2-OUT
TJ = 125°C 1.5 2.4
Ω
†
Pulse-testing techniques maintain junction temperature close to ambient termperature; thermal effects must be taken into account separately.
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