The TPS204xB/TPS205xB power-distribution switches are intended for applications where heavy capacitive
loads and short circuits are likely to be encountered. These devices incorporate 70-mΩ N-channel MOSFET
power switches for power-distribution systems that require multiple power switches in a single package. Each
switch is controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to
control the power-switch rise times and fall times to minimize current surges during switching. The charge pump
requires no external components and allows operation from supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the device limits the output current
to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low. When
continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction
temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal
shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains
off until valid input voltage is present. This power-distribution switch is designed to set current limit at 1 A (typ).
1
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
www.ti.com
ORDERING INFORMATION
T
J
ENABLEPACKAGE
NO. OFORDERABLETOP-SIDE
SWITCHESPART NUMBERMARKING
(1)
(2)
Active highSingleSOIC – DReel of 2500TPS2051BQDRQ12051BQ
–40°C to 125°CSingleSOT-23 – DBVReel of 3000TPS2041BQDBVRQ1PLIQ
Active low
DualSOIC – DReel of 2500TPS2042BQDRQ12042B
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
over operating free-air temperature range unless otherwise noted
V
I(IN)
V
O(OUT)
V
O(OUTx)
V
I(
ENx
Input voltage range (IN)
,
Output voltage range (OUT, OUTx)
Input voltage range (ENx, EN)–0.3 V to 6 V
,
V
I(EN)
V
I(
OC
,Voltage range (OC, OCx)–0.3 V to 6 V
V
I(
OCx
I
,
O(OUT)
I
O(OUTx)
Continuous output currentInternally limited
Continuous total power dissipationSee Dissipation Ratings
T
J
T
stg
Operating virtual-junction temperature range–40°C to 125°C
Storage temperature range–65°C to 150°C
Lead temperature, soldering1,6 mm (1/16 in) from case for 10 s260°C
Electrostatic discharge (ESD)
protection
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND.
(2)
(2)
)
)
)
Human-Body Model (HBM) (H2)2500 V
TPS2041B Machine Model (MM) (M0)50 V
Charged-Device Model (CDM) (C5)1500 V
Human-Body Model (HBM) (H2)2500 V
TPS2042B Machine Model (MM) (M0)50 V
Charged-Device Model (CDM) (C5)1500 V
Human-Body Model (HBM) (H2)2000 V
TPS2051B Machine Model (MM) (M0)50 V
Charged-Device Model (CDM) (C5)1500 V
SLVS782B – NOVEMBER 2007–REVISED OCTOBER 2011
–0.3 V to 6 V
–0.3 V to 6 V
DISSIPATING RATINGS
PACKAGE
D-8585.82 mW5.8582 mW/°C322.20 mW234.32 mW
DBV-5285 mW2.85 mW/°C155 mW114 mW
TA≤ 25°CDERATING FACTORTA= 70°CTA= 85°C
POWER RATINGABOVE TA= 25°CPOWER RATINGPOWER RATING
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be accounted for separately.
(2) Specified by design
EN4IEnable input, logic high turns on power switch
GND1Ground
IN2, 3IInput voltage
OC5OOvercurrent open-drain output, active low
OUT6, 7, 8OPower-switch output