TEXAS INSTRUMENTS TPS2020, TPS2021, TPS2022, TPS2023, TPS2024 Technical data

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D
33-m (5-V Input) High-Side MOSFET Switch
D
Short-Circuit and Thermal Protection
D
Overcurrent Logic Output
D
Operating Range . . . 2.7 V to 5.5 V
D
Logic-Level Enable Input
D
Typical Rise Time . . . 6.1 ms
D
Undervoltage Lockout
D
Maximum Standby Supply Current ...10 µA
D
No Drain-Source Back-Gate Diode
D
Available in 8-pin SOIC and PDIP Packages
D
Ambient Temperature Range, –40°C to 85°C
D
2-kV Human-Body-Model, 200-V Machine-Model ESD Protection
description
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
D OR P PACKAGE
(TOP VIEW)
GND
IN IN
EN
1 2 3 4
OUT
8
OUT
7
OUT
6 5
OC
The TPS202x family of power distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices are 50-m N-channel MOSFET high-side power switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7 V.
When the output load exceeds the current-limit threshold or a short is present, the TPS202x limits the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC
) logic output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures the switch remains off until valid input voltage is present.
The TPS202x devices differ only in short-circuit current threshold. The TPS2020 limits at 0.3-A load, the TPS2021 at 0.9-A load, the TPS2022 at 1.5-A load, the TPS2023 at 2.2-A load, and the TPS2024 at 3-A load (see Available Options). The TPS202x is available in an 8-pin small-outline integrated-circuit (SOIC) package and in an 8-pin dual-in-line (DIP) package and operates over a junction temperature range of –40°C to 125°C.
GENERAL SWITCH CATALOG
33 m, single
80 m, single
TPS201xA
TPS202x
TPS203x
TPS2014 TPS2015 TPS2041 TPS2051 TPS2045 TPS2055
0.2 A – 2 A
0.2 A – 2 A
0.2 A – 2 A
600 mA 1 A 500 mA 500 mA 250 mA 250 mA
80 m, dual
IN1 IN2
260 m
1.3
OUT
TPS2042 TPS2052 TPS2046 TPS2056
TPS2100/1
IN1 500 mA IN2 10 mA
TPS2102/3/4/5
IN1 500 mA IN2 100 mA
500 mA 500 mA 250 mA 250 mA
80 m, triple
TPS2043 TPS2053 TPS2047 TPS2057
500 mA 500 mA 250 mA 250 mA
80 m, quad
TPS2044 TPS2054 TPS2048 TPS2058
500 mA 500 mA 250 mA 250 mA
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 1999, Texas Instruments Incorporated
1
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
MAXIMUM CONTINUOUS
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
AVAILABLE OPTIONS
RECOMMENDED
T
A
–40°C to 85°C Active low
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2020DR)
ENABLE
LOAD CURRENT
TPS2020 functional block diagram
IN
Charge
Pump
(A)
0.2 0.3 TPS2020D TPS2020P
0.6 0.9 TPS2021D TPS2021P 1 1.5 TPS2022D TPS2022P
1.5 2.2 TPS2023D TPS2023P 2 3 TPS2024D TPS2024P
Power Switch
TYPICAL SHORT-CIRCUIT
CURRENT LIMIT AT 25°C
(A)
CS
PACKAGED DEVICES
SMALL OUTLINE
(D)
OUT
PLASTIC DIP
(P)
EN
GND
Current Sense
UVLO
Driver
Thermal
Sense
Terminal Functions
TERMINAL
NAME
EN 4 I Enable input. Logic low turns on power switch. GND 1 I Ground IN 2, 3 I Input voltage OC 5 O Overcurrent. Logic output active low OUT 6, 7, 8 O Power-switch output
NO.
D OR P
I/O DESCRIPTION
Current
Limit
OC
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
detailed description
power switch
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 m (V Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires very little supply current.
driver
The driver controls the gate voltage of the power switch. T o limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage. The rise and fall times are typically in the 2-ms to 9-ms range.
enable (EN
overcurrent (OC)
current sense
)
The logic enable disables the power switch, the bias for the charge pump, driver, and other circuitry to reduce the supply current to less than 10 µA when a logic high is present on EN . A logic zero input on EN restores bias to the drive and control circuits and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
The OC open drain output is asserted (active low) when an overcurrent or overtemperature condition is encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
I(IN)
= 5 V).
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry sends a control signal to the driver. The driver, in turn, reduces the gate voltage and drives the power FET into its saturation region, which switches the output into a constant current mode and holds the current constant while varying the voltage on the load.
thermal sense
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to approximately 140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V , a control signal turns off the power switch.
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3
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
Input voltage
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Input voltage range, V Output voltage range, V Input voltage range, V Continuous output current, I
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, T Storage temperature range, T
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . .
Electrostatic discharge (ESD) protection: Human body model 2 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
PACKAGE
D 725 mW 5.8 mW/°C 464 mW 377 mW P 1175 mW 9.4 mW/°C 752 mW 611 mW
(see Note 1) –0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I(IN)
O(OUT)
I(EN)
(see Note 1) –0.3 V to V
O(OUT)
J
stg
Machine model 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Charged device model (CDM) 750 V. . . . . . . . . . . . . . . . . . . . . . . . .
DISSIPATION RATING TABLE
TA 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
+ 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I(IN)
–0.3 V to 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
internally limited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
recommended operating conditions
MIN MAX UNIT
p
Continuous output current, I
Operating virtual junction temperature, T
O
V V TPS2020 0 0.2 TPS2021 0 0.6 TPS2022 0 1 TPS2023 0 1.5 TPS2024 0 2
I(IN) I(EN)
J
2.7 5.5 V 0 5.5 V
A
–40 125 °C
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
r
DS(on)
Static drain-source on-state resistance
m
trRise time, output
ms
tfFall time, output
ms
VILLow-level in ut voltage
V
ms
T
J
25 C
V
I
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
electrical characteristics over recommended operating junction temperature range, V
= rated current, EN = 0 V (unless otherwise noted)
I
O
I(IN)
= 5.5 V,
power switch
PARAMETER
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
V
I(IN)
p
p
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
CL = 1 µF, V
I(IN)
CL = 1 µF, V
I(IN)
CL = 1 µF, V
I(IN)
CL = 1 µF,
TEST CONDITIONS
= 5 V, TJ = 25°C, IO = 1.8 A 33 36 = 5 V, TJ = 85°C, IO = 1.8 A 38 46 = 5 V, TJ = 125°C, IO = 1.8 A 44 50 = 3.3 V, TJ = 25°C, IO = 1.8 A 37 41 = 3.3 V, TJ = 85°C, IO = 1.8 A 43 52 = 3.3 V, TJ = 125°C, IO = 1.8 A 51 61 = 5 V, TJ = 25°C, IO = 0.18 A 30 34 = 5 V, TJ = 85°C, IO = 0.18 A 35 41 = 5 V, TJ = 125°C, IO = 0.18 A 39 47 = 3.3 V, TJ = 25°C, IO = 0.18 A 33 37 = 3.3 V, TJ = 85°C, IO = 0.18 A 39 46 = 3.3 V, TJ = 125°C, IO = 0.18 A 44 56 = 5.5 V,
= 2.7 V,
= 5.5 V,
= 2.7 V,
TJ = 25°C, RL = 10
TJ = 25°C, RL = 10
TJ = 25°C, RL = 10
TJ = 25°C, RL = 10
MIN TYP MAX UNIT
6.1
8.6
3.4
3
enable input (EN)
PARAMETER TEST CONDITIONS
V
High-level input voltage 2.7 V ≤ V
IH
p
I
Input current EN= 0 V or EN = V
I
t
Turnon time CL = 100 µF, RL = 10 20
on
t
Turnoff time CL = 100 µF, RL = 10 40
off
4.5 V ≤ V
2.7 V ≤ V
5.5 V 2 V
I(IN)
5.5 V 0.8
I(IN)
4.5 V 0.5
I(IN)
I(IN)
MIN TYP MAX UNIT
–0.5 0.5 µA
current limit
PARAMETER
=
°
=
I
Short-circuit output current
OS
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
OUT connected to GND, Device enable into short circuit
,
TEST CONDITIONS
=
= 5.5 V,
TPS2020 0.22 0.3 0.4 TPS2021 0.66 0.9 1.1 TPS2022 1.1 1.5 1.8 TPS2023 1.65 2.2 2.7 TPS2024 2.2 3 3.8
MIN TYP MAX UNIT
A
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5
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
Supply current, low-level output
No Load on OUT
A
Supply current, high-level output
No Load on OUT
EN
V
A
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
electrical characteristics over recommended operating junction temperature range, V
= rated current, EN = 0 V (unless otherwise noted) (continued)
I
O
I(IN)
= 5.5 V,
supply current
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
pp
pp
Leakage current OUT connected to ground EN = V
p
p
EN = V
= 0
TJ = 25°C 0.3 1
I(IN)
–40°C ≤ TJ 125°C 10 TJ = 25°C 58 75 –40°C ≤ TJ 125°C 75 100 –40°C ≤ TJ 125°C 10 µA
I(IN)
undervoltage lockout
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Low-level input voltage 2 2.5 V Hysteresis TJ = 25°C 100 mV
overcurrent (OC)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output low voltage IO = 10 mA, V Off-state current
Specified by design, not production tested.
VO = 5 V, VO = 3.3 V 1 µA
OL(OC)
0.4 V
µ
µ
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TPS2020, TPS2021, TPS2022, TPS2023, TPS2024
POWER-DISTRIBUTION SWITCHES
SLVS175A – DECEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
OUT
RL CL
TEST CIRCUIT
V
V
O(OUT)
I(EN)
50%
t
on
VOLTAGE WAVEFORMS
50%
90%
V
10%
O(OUT)
t
r
90%
90%
10%
t
off
10%
t
f
Figure 1. Test Circuit and Voltage Waveforms
Table of Timing Diagrams
FIGURE
Turnon Delay and Rise TIme 2 Turnoff Delay and Fall Time 3 Turnon Delay and Rise TIme with 1-µF Load 4 Turnoff Delay and Rise TIme with 1-µF Load 5 Device Enabled into Short 6
TPS2020, TPS2021, TPS2022, TPS2023, and TPS2024, Ramped Load on Enabled Device TPS2024, Inrush Current 12
7.9- Load Connected to an Enabled TPS2020 Device 13
3.7- Load Connected to an Enabled TPS2020 Device 14
3.7- Load Connected to an Enabled TPS2021 Device 15
2.6- Load Connected to an Enabled TPS2021 Device 16
2.6- Load Connected to an Enabled TPS2022 Device 17
1.2- Load Connected to an Enabled TPS2022 Device 18
1.2- Load Connected to an Enabled TPS2023 Device 19
0.9- Load Connected to an Enabled TPS2023 Device 20
0.9- Load Connected to an Enabled TPS2024 Device 21
0.5- Load Connected to an Enabled TPS2024 Device 22
7, 8, 9,
10, 11
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