Texas Instruments TPIC6C595N, TPIC6C595DR, TPIC6C595D Datasheet

TPIC6C595

POWER LOGIC 8-BIT SHIFT REGISTER

SLIS061A – JULY 1998 – REVISED JULY 1999

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Low r

DS(on)

...7 Ω Typ

D

Avalanche Energy ...30 mJ

D

Eight Power DMOS Transistor Outputs of
100-mA Continuous Current

D

250-mA Current Limit Capability

D

ESD Protection . . . 2500 V

D

Output Clamp Voltage . . . 33 V

D

Devices Are Cascadable

D

Low Power Consumption

description

The TPIC6C595 is a monolithic, medium-voltage,
low-current power 8-bit shift register designed for
use in systems that require relatively moderate
load power such as LEDs. The device contains a
built-in voltage clamp on the outputs for inductive
transient protection. Power driver applications
include relays, solenoids, and other low-current or
medium-voltage loads.

This device contains an 8-bit serial-in, parallel-out
shift register that feeds an 8-bit D-type storage
register. Data transfers through both the shift and
storage registers on the rising edge of the shift
register clock (SRCK) and the register clock
(RCK), respectively . The device transfers data out
the serial output (SER OUT) port on the rising
edge of SRCK. The storage register transfers data
to the output buffer when shift register clear (CLR

)
is high. When CLR is low, the input shift register is
cleared. When output enable (G

) is held high, all
data in the output buffers is held low and all drain
outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When
data in the output buffers is low , the DMOS transistor outputs are off. When data is high, the DMOS transistor
outputs have sink-current capability. The SER OUT allows for cascading of the data from the shift register to
additional devices.

This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated
voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device
should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level,
preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication

Guidelines for

Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies

available from Texas Instruments.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

logic symbol

†

2

SRG8

†

This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.

8
10

7
15

2

EN3

C2

R

C1

1D

G

RCK

CLR

SRCK

SER IN

3

5

4

11

6

13

12

9

14

DRAIN0
DRAIN1
DRAIN2
DRAIN3
DRAIN4
DRAIN5
DRAIN6
DRAIN7
SER OUT

2

1
2
3
4
5
6
7
8

16
15
14
13
12
11
10

9

V

CC

SER IN
DRAIN0
DRAIN1
DRAIN2
DRAIN3

CLR

G

GND
SRCK
DRAIN7
DRAIN6
DRAIN5
DRAIN4
RCK
SER OUT

D OR N PACKAGE

(TOP VIEW)

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Copyright  1999, Texas Instruments Incorporated

TPIC6C595
POWER LOGIC 8-BIT SHIFT REGISTER

SLIS061A – JULY 1998 – REVISED JULY 1999

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

Outputs are low-side, open-drain DMOS transistors with output ratings of 33 V and 100 mA continuous
sink-current capability . Each output provides a 250-mA maximum current limit at TC = 25°C. The current limit
decreases as the junction temperature increases for additional device protection. The device also provides up
to 2500 V of ESD protection when tested using the human-body model and 200 V machine model.

The TPIC6C595 is characterized for operation over the operating case temperature range of –40°C to 125°C.

logic diagram (positive logic)

G
RCK
CLR

SRCK

SER IN

CLR

D

C1

D

C2

CLR

D

C1

SER OUT

CLR

D

C1

CLR

D

C1

CLR

D

C1

CLR

D

C1

CLR

D

C1

CLR

D

C1

D

C2

D

C2

D

C2

D

C2

D

C2

D

C2

D

C2

3

DRAIN0

4

DRAIN1

16

GND

5

DRAIN2

6

DRAIN3

11

DRAIN4

12

DRAIN5

13

DRAIN6

14

DRAIN7

8

7

2

10

15

9

CLR

CLR

CLR

CLR

CLR

CLR

CLR

CLR

TPIC6C595

POWER LOGIC 8-BIT SHIFT REGISTER

SLIS061A – JULY 1998 – REVISED JULY 1999

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

schematic of inputs and outputs

EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS

V

CC

Input

GND

GND

DRAIN

33 V

20 V

25 V

12 V

absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)

†

Logic supply voltage, VCC (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic input voltage range, VI –0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power DMOS drain-to-source voltage, VDS (see Note 2) 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous source-to-drain diode anode current 250 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed source-to-drain diode anode current (see Note 3) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, all outputs on, I

D

, T

C

= 25°C (see Note 3) 250 mA. . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on, ID, TC = 25°C 100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak drain current single output, IDM,T

C

= 25°C (see Note 3) 250 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, EAS (see Figure 4) 30 mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche current, I

AS

(see Note 4) 200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, TC –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values are with respect to GND.

2. Each power DMOS source is internally connected to GND.

3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%.

4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 1.5 H, IAS = 200 mA (see Figure 4).

DISSIPATION RATING TABLE

PACKAGE

TC ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TC = 25°C

TC = 125°C

POWER RATING

D 1087 mW 8.7 mW/°C 217 mW
N 1470 mW 11.7 mW/°C 294 mW

TPIC6C595
POWER LOGIC 8-BIT SHIFT REGISTER

SLIS061A – JULY 1998 – REVISED JULY 1999

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

recommended operating conditions

MIN MAX UNIT

Logic supply voltage, V

CC

4.5 5.5 V

High-level input voltage, V

IH

0.85 V

CC

V

Low-level input voltage, V

IL

0.15 V

CC

V
Pulsed drain output current, TC = 25°C, VCC = 5 V , all outputs on (see Notes 3 and 5 and Figure 11) 250 mA
Setup time, SER IN high before SRCK↑, tsu (see Figure 2) 20 ns
Hold time, SER IN high after SRCK↑, th (see Figure 2) 20 ns
Pulse duration, tw (see Figure 2) 40 ns
Operating case temperature, T

C

–40 125 °C

electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)DSX

Drain-to-source breakdown voltage ID = 1 mA 33 37 V

V

SD

Source-to-drain diode forward voltage IF = 100 mA 0.85 1.2 V

p

IOH = –20 µA, VCC = 4.5 V 4.4 4.49

VOHHigh-level output voltage, SER OUT

IOH = –4 mA, VCC = 4.5 V 4 4.2

V

p

IOL = 20 µA, VCC = 4.5 V 0.005 0.1

VOLLow-level output voltage, SER OUT

IOL = 4 mA, VCC = 4.5 V 0.3 0.5

V

I

IH

High-level input current VCC = 5.5 V, VI = V

CC

1 µA

I

IL

Low-level input current VCC = 5.5 V, VI = 0 –1 µA

pp

All outputs off 20 200

ICCLogic supply current

V

CC

=

5.5 V

All outputs on 150 500

µ

A

I

CC(FRQ)

Logic supply current at frequency

f

SRCK

= 5 MHz,

All outputs off,

CL = 30 pF,
See Figures 2 and 6

1.2 5 mA

I

N

Nominal current

V

DS(on)

= 0.5 V,

TC = 85°C,

IN = ID,
See Notes 5, 6, and 7

90 mA

VDS = 30 V, VCC = 5.5 V 0.1 5

I

DSX

Off-state drain current

VDS = 30 V,
TC = 125°C

VCC = 5.5 V,

0.15 8

µA

ID = 50 mA,
VCC = 4.5 V

6.5 9

r

DS(on)

Static drain-source on-state resistance

ID = 50 mA,
TC = 125°C,
VCC = 4.5 V

See Notes 5 and 6
and Figures 7 and 8

9.9 12

Ω

ID = 100 mA,
VCC = 4.5 V

6.8 10

NOTES: 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%.

5. Technique should limit TJ – TC to 10°C maximum.

6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at TC = 85°C.